JPS6185747A - Secondary electron emission surface - Google Patents
Secondary electron emission surfaceInfo
- Publication number
- JPS6185747A JPS6185747A JP59206821A JP20682184A JPS6185747A JP S6185747 A JPS6185747 A JP S6185747A JP 59206821 A JP59206821 A JP 59206821A JP 20682184 A JP20682184 A JP 20682184A JP S6185747 A JPS6185747 A JP S6185747A
- Authority
- JP
- Japan
- Prior art keywords
- secondary electron
- electron emission
- emission surface
- aluminum metal
- electron emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000006866 deterioration Effects 0.000 abstract description 5
- 229910052787 antimony Inorganic materials 0.000 abstract description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052792 caesium Inorganic materials 0.000 abstract description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052700 potassium Inorganic materials 0.000 abstract description 2
- 239000011591 potassium Substances 0.000 abstract description 2
- 238000007738 vacuum evaporation Methods 0.000 abstract 2
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光電子増倍管、二次電子増倍管またはイメー
ジオルシコンなどのダイノードに用いられる二次電子放
出面に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a secondary electron emitting surface used in a dynode such as a photomultiplier tube, a secondary electron multiplier tube or an image orthicon.
（従来の技術）
金属面に電子をあてると、その電子が反射してくる他に
、その金属内部の電子が飛び出してくる。(Prior Art) When electrons are applied to a metal surface, not only are the electrons reflected, but also electrons inside the metal are ejected.
この現象を二次電子放出といい、前記金属面を二次電子
放出面という。This phenomenon is called secondary electron emission, and the metal surface is called a secondary electron emission surface.
従来、二次電子放出面としては、ニッケル基板上にアン
チモンを蒸着し、アルカリ金属を吸収させたものや、銅
ベリリウム合金もしくは銀マグネシウム合金を加熱・酸
化処理して表面に酸化ベリリウム層もしくは酸化マグネ
シウム層を形成したものなどが知られている。Conventionally, secondary electron emitting surfaces have been made by depositing antimony on a nickel substrate and absorbing alkali metals, or by heating and oxidizing copper beryllium alloy or silver magnesium alloy to form a beryllium oxide layer or magnesium oxide layer on the surface. Those with layers are known.
（発明が解決しようとする問題点）
しかし、前者の場合には、製造工程が複雑であるため、
各製造工程において相当の熟練を必要とするという問題
点があった。(Problem to be solved by the invention) However, in the former case, since the manufacturing process is complicated,
There was a problem in that each manufacturing process required considerable skill.
一方、後者の場合には、使用による二次電子増６倍比の
劣化が速いという問題点があった。On the other hand, in the latter case, there was a problem that the secondary electron multiplication factor 6 deteriorated quickly due to use.
本発明は、製造が容易で、使用による二次電子増倍比の
劣化が極めて小さい二次電子放出面を提供することを目
的としている。An object of the present invention is to provide a secondary electron emitting surface that is easy to manufacture and whose secondary electron multiplication ratio deteriorates extremely little due to use.
（問題点を解決するための手段）
前記目的を達成するために、本発明による二次電子放出
面は、アルミニウム金属の表面を酸化して形成しである
。(Means for Solving the Problems) In order to achieve the above object, the secondary electron emitting surface according to the present invention is formed by oxidizing the surface of aluminum metal.
前記アルミニウム金属は、具体的には、ニッケル板上に
真空蒸着により形成されたものが例示される。A specific example of the aluminum metal is one formed on a nickel plate by vacuum deposition.
前記構成によれば本発明の目的は完全に達成できる。According to the above structure, the object of the present invention can be completely achieved.
（実施例）
以下、図面等を参照して、実施例につき本発明の詳細な
説明する。(Example) Hereinafter, the present invention will be described in detail with reference to the drawings and the like.
第１図および第２図は、本発明による二次電子放出面の
実施例を示した図である。FIGS. 1 and 2 are diagrams showing embodiments of the secondary electron emitting surface according to the present invention.
本実施例では、光電子増倍管に用いられている二次電子
放出面を例にして説明する。This embodiment will be explained using a secondary electron emitting surface used in a photomultiplier tube as an example.
第１図において、１〜４はダイノード、５は入射窓、６
は集束用電極、７は光電面、８は陽極。In FIG. 1, 1 to 4 are dynodes, 5 is an entrance window, and 6 is a dynode.
is a focusing electrode, 7 is a photocathode, and 8 is an anode.
９は引き出し電極、１０は気密容器である。9 is an extraction electrode, and 10 is an airtight container.
二次電子放出面は、第２図に示すように、ダイノード１
〜４の内壁１ａ〜４ａ上に形成されている。この二次電
子放出面は、アルミニウム金属の表面を酸化して形成し
である。このアルミニウム金属はニッケル板上に真空蒸
着により形成されたものである。The secondary electron emission surface is the dynode 1 as shown in FIG.
-4 are formed on the inner walls 1a-4a. This secondary electron emitting surface is formed by oxidizing the surface of aluminum metal. This aluminum metal is formed on a nickel plate by vacuum deposition.
つぎに、本発明による二次電子放出面の製造工程を、光
電子増倍管の製造上、程の中で説明する。Next, the manufacturing process of the secondary electron emitting surface according to the present invention will be explained in the context of manufacturing a photomultiplier tube.
まず、二次電子放出面５を、芸着工程と閉存工程とによ
って製造する。First, the secondary electron emitting surface 5 is manufactured by a dressing process and a closing process.
蒸着工程は、第２図のダイノード１〜４に示すような形
状に成形したニッケル板の表面の内壁１ａ〜４ａにアル
ミニウムを約５０ｍμの厚さに真空中で基若する工程で
ある。The vapor deposition step is a step in which aluminum is deposited in a vacuum to a thickness of about 50 mμ on the inner walls 1a to 4a of the surface of a nickel plate formed into the shapes shown in dynodes 1 to 4 in FIG.
保存工程は、前記蒸着工程でアルミニウムを蒸着したニ
ッケル板を、室＆（約２５℃）で清浄な空気中に１２時
間保存する工程である。この保存工程によって約５ｍμ
の厚さの酸化アルミニウム層が形成される。The storage process is a process in which the nickel plate on which aluminum has been deposited in the vapor deposition process is stored in a room (approximately 25° C.) in clean air for 12 hours. Approximately 5 mμ due to this preservation process
An aluminum oxide layer with a thickness of .
つぎに、二次電子放出面を、第１図に示すように気密容
器１０内に組み込む。Next, the secondary electron emitting surface is assembled into the airtight container 10 as shown in FIG.
気密容器１０を真空に排気した後、入射窓５の内壁にア
ンチモン、ナトリウム、カリウムおよびセシウムを蒸着
した光電面７を形成する。蒸着源１５．１６は集束用電
極６と入射窓５の間に設けてあり、通電または高周波加
熱によって蒸着させる。After the airtight container 10 is evacuated, a photocathode 7 is formed on the inner wall of the entrance window 5 by vapor-depositing antimony, sodium, potassium, and cesium. The vapor deposition sources 15 and 16 are provided between the focusing electrode 6 and the entrance window 5, and perform vapor deposition by energization or high-frequency heating.
本件発明者等は、本発明による二次電子放出面を有する
光電子増倍管（以下、光電子増倍管（Ａ）という。）と
、これと同一構造の銅ベリリウム合金の基板の表面に酸
化ベリリウム層が形成された二次電子放出面を有する光
電子増倍管（以下、光電子増倍管（Ｂ）という、）とを
比較する実験を行った。The inventors have proposed a photomultiplier tube having a secondary electron emitting surface according to the present invention (hereinafter referred to as a photomultiplier tube (A)), and a beryllium oxide film on the surface of a copper-beryllium alloy substrate having the same structure as the photomultiplier tube (hereinafter referred to as photomultiplier tube (A)). An experiment was conducted to compare the present invention with a photomultiplier tube (hereinafter referred to as photomultiplier tube (B)) having a layered secondary electron emitting surface.
実験条件としては、光電面７に一１２００ボルト。The experimental conditions were -1,200 volts applied to the photocathode 7.
集束用電極６および第１段ダイノードに一１０００ボル
トの電圧を印加して、各ダイノード間の電位差を一１０
０ボルトに設定して、陽極８を０ボルトにする。A voltage of 11,000 volts is applied to the focusing electrode 6 and the first stage dynode to reduce the potential difference between each dynode to 110 volts.
Set to 0 volts to bring the anode 8 to 0 volts.
このような条件にして、入射光量をアパーチャ径によっ
て調整して、陽極電流を１００μＡとなるように設定し
、その後の時間の経過と陽極電流の関係を求めた。なお
、測定値は、それぞれの光電子増倍管（Ａ）、 （Ｂ
）を１００本づつ用いて測定を行い、その平均値をとっ
たものである。Under these conditions, the amount of incident light was adjusted by the aperture diameter, the anode current was set to 100 μA, and the relationship between the elapsed time and the anode current was determined. The measured values are for each photomultiplier tube (A) and (B
) was measured using 100 pieces each, and the average value was taken.
第３図は、本発明による二次電子放出面と従来の二次電
子放出面をそれぞれ有する光電子増倍管の時間の経過と
陽極電流の関係を示したグラフである。FIG. 3 is a graph showing the relationship between the elapsed time and the anode current of a photomultiplier tube having a secondary electron emitting surface according to the present invention and a conventional secondary electron emitting surface, respectively.
光電子増倍管（Ａ）、 （Ｂ）の測定値をそれぞれ曲
線（Ａ）、 （Ｂ）として示しである。このグラフよ
り、従来の光電子増倍管（Ｂ）は、１００時間経過後に
は劣化が目立ってくるのに対して、本発明による二次電
子放出面を有する光電子増倍管（Ａ）は、極めて安定で
あることがわかる。The measured values of photomultiplier tubes (A) and (B) are shown as curves (A) and (B), respectively. From this graph, it can be seen that while the conventional photomultiplier tube (B) shows noticeable deterioration after 100 hours, the photomultiplier tube (A) having the secondary electron emitting surface according to the present invention shows extremely poor deterioration. It can be seen that it is stable.
以上説明した実施例では二次電子放出面は、ニッケル板
の上にアルミニウム層を形成し、大気で酸化した例につ
いて説明したが、ニッケル仮に代えて、他の金兄、セラ
ミック等の絶縁物にアルミニウム層を形成してもよい。In the above-described embodiments, the secondary electron emitting surface was formed by forming an aluminum layer on a nickel plate and oxidizing it in the atmosphere. An aluminum layer may also be formed.
また、アルミニウム板を用い、表面酸化層を一旦除去し
、前述と同じ方法でその表面を酸化したものでもよい。Alternatively, an aluminum plate may be used, the surface oxidation layer removed once, and the surface oxidized in the same manner as described above.
さらに、酸化アルミニウム層についても、陽極酸化など
他の方法で形成してもよい。Furthermore, the aluminum oxide layer may also be formed by other methods such as anodic oxidation.
つまり、本発明はアルミニウム層とその表面に形成され
た酸化アルミニウム層とからなる二次電子放出面のみに
よって本発明特有の効果が得られるものである。That is, in the present invention, the unique effects of the present invention can be obtained only by the secondary electron emitting surface consisting of the aluminum layer and the aluminum oxide layer formed on the surface of the aluminum layer.
（発明の効果）
以上詳しく説明したように、本発明によれば、製造が容
易で、使用による二次電子増倍比の劣化が極めて小さい
二次電子放出面が実現できる。(Effects of the Invention) As described above in detail, according to the present invention, it is possible to realize a secondary electron emitting surface that is easy to manufacture and exhibits very little deterioration of the secondary electron multiplication ratio due to use.
第１図および第２図は、本発明による二次電子放出面の
実施例を示した図である。
第３図は、本発明による二次電子放出面と従来の二次電
子放出面をそれぞれ有する光電子増倍管の時間の経過と
陽極電流の関係を示したグラフである。
１〜４・・・ダイノード １ａ〜４ａ・・・内壁５・
・・入射窓 ６・・・集束用電極７・・・光
電面 ８・・・陽極９・・・引き出し電極
１０・・・気密容器特許出願人 浜松ホトニクス
株式会社代理人 弁理士 井 ノ ロ 溝片１ｚ
２２図FIGS. 1 and 2 are diagrams showing embodiments of the secondary electron emitting surface according to the present invention. FIG. 3 is a graph showing the relationship between the elapsed time and the anode current of a photomultiplier tube having a secondary electron emitting surface according to the present invention and a conventional secondary electron emitting surface, respectively. 1-4... Dynode 1a-4a... Inner wall 5.
...Incidence window 6...Focusing electrode 7...Photocathode 8...Anode 9...Extraction electrode
10... Airtight container Patent applicant Hamamatsu Photonics Co., Ltd. Agent Patent attorney Inoro Mizogata 1z Figure 22
Claims (2)
電子放出面。(1) A secondary electron emitting surface formed by oxidizing the surface of aluminum metal.
着により形成されたものである特許請求の範囲第１項記
載の二次電子放出面。(2) The secondary electron emitting surface according to claim 1, wherein the aluminum metal is formed on a nickel plate by vacuum deposition.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59206821A JPS6185747A (en) | 1984-10-02 | 1984-10-02 | Secondary electron emission surface |
| DE19853533520 DE3533520A1 (en) | 1984-10-02 | 1985-09-20 | SECOND ELECTRON EMISSION SURFACE |
| GB08524036A GB2167450A (en) | 1984-10-02 | 1985-09-30 | Secondary electron emission surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59206821A JPS6185747A (en) | 1984-10-02 | 1984-10-02 | Secondary electron emission surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6185747A true JPS6185747A (en) | 1986-05-01 |
Family
ID=16529638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59206821A Pending JPS6185747A (en) | 1984-10-02 | 1984-10-02 | Secondary electron emission surface |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6185747A (en) |
| DE (1) | DE3533520A1 (en) |
| GB (1) | GB2167450A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254652A (en) * | 1987-04-12 | 1988-10-21 | Hamamatsu Photonics Kk | Photomultiplier tube |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1515722A1 (en) * | 1964-04-06 | 1970-02-12 | Fujitsu Ltd | Metal film electrical resistance |
| GB1216497A (en) * | 1968-06-18 | 1970-12-23 | Mullard Ltd | Improvements in or relating to electron multiplier and like devices |
| US3739216A (en) * | 1971-07-30 | 1973-06-12 | Zenith Radio Corp | Secondary electron multipliers with single layer cermet coatings |
| GB2023333B (en) * | 1978-06-14 | 1982-09-08 | Philips Electronic Associated | Electron multipliers |
| GB2045808A (en) * | 1979-04-02 | 1980-11-05 | Philips Electronic Associated | Method of forming a secondary emissive coating on a dynode |
| GB2048561B (en) * | 1979-04-02 | 1983-02-23 | Philips Electronic Associated | Method of forming a secondary emissive coating on a dynode |
| NL8002665A (en) * | 1980-05-09 | 1981-12-01 | Philips Nv | METHOD FOR PROVIDING A METAL PART ON A THERMAL BLACK SURFACE |
| US4368220A (en) * | 1981-06-30 | 1983-01-11 | International Business Machines Corporation | Passivation of RIE patterned al-based alloy films by etching to remove contaminants and surface oxide followed by oxidation |
-
1984
- 1984-10-02 JP JP59206821A patent/JPS6185747A/en active Pending
-
1985
- 1985-09-20 DE DE19853533520 patent/DE3533520A1/en not_active Ceased
- 1985-09-30 GB GB08524036A patent/GB2167450A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254652A (en) * | 1987-04-12 | 1988-10-21 | Hamamatsu Photonics Kk | Photomultiplier tube |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8524036D0 (en) | 1985-11-06 |
| GB2167450A (en) | 1986-05-29 |
| DE3533520A1 (en) | 1986-04-03 |
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