JPS6176666A - Sputtering device - Google Patents

Abstract

PURPOSE:To form a uniform and high-quality thin film efficiently by adhesion, by making a mesh anode movable so that the time in which a shadow is projected on the same position of a substrate can be shortened on projecting a mesh anode from the target side to the substrate side. CONSTITUTION:A shutter 7 is opened, and substrates 6, 6, 6 are faced a target 5 through a mesh anode 13. The mesh anode 13 is rotated by a motor 19, and prescribed d.c. voltage is impressed from a power source 8 for sputtering and a bias supply 9 to execute this sputtering. At this time, the mesh anode 13 is rotating, so a pattern of the shadow projected by the mesh anode 13 from the target 5 side to the substrates 6, 6, 6 side changes with the passage of time. Accordingly, the shaded part on the substrates 6, 6, 6 does not stay in a specific position.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bias sputtering apparatus, which is capable of depositing and producing a uniform and high-quality thin film on the surface of a substrate.

[Prior Art] A conventional bias sputtering apparatus of this type was constructed as shown in FIG. In this Figure 2, (1
) is a chamber, and inside this chamber (1) is a target holder (2) as a cathode.

A substrate holder (3) and an anode (4) are provided,
A target (5) is held in the target holder (2), and a substrate (6) is held in the substrate holder (3).

(7) is a shutter. (8) is a sputter power supply,
The cathode side of this sputtering power source (8) is connected to the target holder (
2), and the anode side is connected to the anode (4) and chamber (1), and is also grounded.

(9) is a bias power source, the cathode side of this bias power source (9) is connected to the substrate holder (3), and the anode side is grounded. In the conventional sputtering apparatus shown in FIG. 2, the substrate holder (3) is interposed between the anode (4) and the target (5).
If the value is increased, the main discharge generated between the anode (4) and the target (5) will be disturbed or disappear.
There is a drawback that the substrate holder (3) cannot be made larger than the anode (4), and the efficiency of film production by sputtering decreases.

In order to improve such shortcomings, the present applicant.

Patent application 1986-6839 (Special public patent application 1984-35591)
A sputtering apparatus as shown in FIG. 3 has already been proposed. In the sputtering apparatus shown in FIG.

A mesh node (10) is provided between the target holder (2) and the substrate holder (3), and the anode side of the sputtering electrode i#t (8) is connected to this mesh node (10). , the substrate holder (3) can be made larger, and the aforementioned drawback of reduced film production efficiency by sputtering is improved.

[Problems to be Solved by the Invention] However, in the sputtering apparatus shown in FIG. 3, the target (5) of the mesh node (10) is
) side to the substrate (6) side, the film thickness in the shadowed part (corresponding to the conductor) is thinner than the film thickness in the non-shadowed part (i.e., the part corresponding to the mesh), resulting in a uniform film. There was a problem in that it was difficult to create a thick layer.

For example, in Figure 3, the target (5) and the substrate (6)
The distance (d) between the target and the target (5
) and the substrate (6), a mesh (1
A mesh anode (10) formed with 0a) is provided, and under a predetermined sputtering pressure, the sputter power source (8) and the bias power source (9) are set to a predetermined voltage for a certain period of time (for example, 7
4 minutes), the tantalum nitride thin film (12) formed on the substrate (6) was as shown in FIG. 4(a). In other words, the thickness of the film formed on the non-shaded part (12a) is 10OA, while the thickness of the film formed on the mesh node (10A) is 10OA.
The shaded area (12b) by the stainless steel wire (10b), which is a conductor for making the mesh (10a), became a depression, and no film (12) was formed.

When the stainless steel wires (10b) of the mesh anode (10) are spaced at 4 mm intervals, the film thickness of the non-shaded part (12a) is 40OA, as shown in FIG. 4(b), and
When the interval is 8 mm, the film thickness of the non-shaded part (12a) is 80OA as shown in Figure (c). ) The proportion of depressions gradually decreased. If the interval between the stainless steel wires (10b) of the mesh anode (10) is increased (that is, if the mesh (10a) is made larger) from this FIG. 4(a), (b), and (c),
Shadow area (12a) relative to film thickness of non-shadow area (12a)
Although the proportion of depressions in 12b) is reduced, the advantage of providing the mesh node (10) is reduced, and the disadvantage is that it is difficult to achieve uniform and efficient film formation. there were.

The present invention aims to solve the above-mentioned problems.

[Means for solving the problem] In the previously proposed sputtering apparatus equipped with a mesh anode as shown in FIG. 3, when the mesh anode is projected from the target side to the substrate side, The mesh notebook is made to move so as to reduce the amount of time that a shadow is formed at the same location.

[Operation] As the mesh anode moves, the projection pattern of the mesh anode on the substrate changes over time, and the time for the mesh anode's conductor to cast a shadow on the same location on the substrate is reduced, so that the shadow formed on the substrate is reduced. The non-uniformity of the resulting film is reduced, and the advantages of providing the mesh anode are exhibited, making it possible to produce a film with high efficiency.

[Example] Figures 1(a) and (b) show an example of the present invention.
The same parts as the previously proposed example shown in FIG. 3 are given the same reference numerals. In FIG. 1(a), (1) is a chamber as a reduced pressure container, and a target holder (2) as a cathode and a substrate holder (3) are provided in this chamber (1). A target (5) made of sputtered metal (e.g. tantalum) is fixed to the surface of the target holder (2), and a substrate (6) on which a thin film is to be deposited is fixed to the target-side surface of the substrate holder (3). (6) (6)
is preserved. The target (5) and the substrate (6)
A mesh anode (13) is provided between the two. As shown in FIG. 1(b), this mesh anode (13) has a ring body (13a) made of a conductive material.
There are many meshes (13a) inside this ring body (13a).
b) (13b) - (For example, 4mm x 4mm square) Stainless steel wires (13c) (
13C)... (for example, diameter 0.5 mmφ). The ring body (1) of the mesh anode (13)
3a) is a guide frame (
14), and is in contact with a contact (15) protruding within the guide frame (14);
The mesh anode (13) and the chamber (1) are electrically connected. The mesh anode (13)
Teeth (13d) (13d)... that mesh with the gear (16) are formed on the outer peripheral edge of the ring body (13a), and the central axis (17) of the gear (16) is connected to the chamber (1). ) is rotatably supported by bearings (18a) (18b) (18c) fixed to the chamber (18c).
) is connected to a rotating shaft (20) of a motor (19) provided outside. In this way, when the motor (19) rotates, the mesh anode (13) is rotated as shown in FIG.
As shown in b), it rotates in the direction of solid arrow A around a point (◯) that is shifted from the center position within the mesh (13b) at the center. Note that this center point (○) is the mesh (13
Although it is preferable to deviate from the center position in b), it may be at the center position. (8) is a variable high voltage DC power supply (for example, I
The cathode side of this sputter power source (8) is connected to the target holder (2), the anode side is connected to the chamber (1) and grounded, and the sputter power source (8) is connected to the shutter (7). ) (not shown). (9) is a variable DC power supply (e.g. IO
The bias power source (9) is connected to the substrate holder (3) at its cathode side and grounded at its anode side.

Next, the operation of the above embodiment will be explained. As shown in Figure 1(a), the target (5) and the substrate (6) (6) (
6) is cut off by a shutter (7), and a predetermined DC voltage is applied from a sputtering power source (8) and a bias power source (9) to target (5), chamber (1), and substrate (6) (6). ) The cleaning operation in (6) is substantially the same as that of the previously proposed example shown in FIG. 3, so a description thereof will be omitted.

Open the shutter (7) and remove the board (6) (6) (6
) through the mesh anode (13) to the target (5
), the mesh node (13) is rotated by rotating the motor (19), and the sputtering power source (
8) and a bias power supply (9) to apply a predetermined DC voltage to start the main sputtering. In this sputtering,
A glow discharge occurs between the mesh anode (13) and the target (5), ionizes the argon gas in the chamber (1), and when the argon ions collide with the target (5), the argon ions and the tantalum in the target (5) Energy is exchanged between atoms. Due to this energy, tantalum atoms as sputter particles fly out from the target (5), react with nitrogen in the chamber (1), and form the mesh (13b) of the mesh anode (13).
(13b) ... through the board (6) (6) (6)
A thin film of tantalum nitride is formed. At this time, since the mesh anode (13) is being rotated by the motor (19), the projection pattern is projected from the target (5) side of the mesh anode (13) onto the substrate (6) (6) (6) side. changes over time, and the shadow portion formed on the substrate (6) (6) (6) is not fixed to a specific location. That is, the substrate (6) (
6) (6) It is possible to reduce the amount of time a shadow is formed at the same location above. Therefore, the sputtered particles ejected from the target (5) adhere almost uniformly to the surface of the substrate (6) (6) (6), forming a uniform tantalum nitride thin film. In addition, a bias power source (9) is applied between the mesh anode (13) and the substrate holder (3), and the substrate (6) (6) (6) is negatively biased. ) (6) (6) The thin film attached to the surface is cleaned by receiving a relatively weak impact from argon ions.

Therefore, a high quality thin film with few impurities is formed. Furthermore, the main discharge occurs between the target (5) and the mesh node (13), and the main discharge occurs between the substrate (6) (6) (6)
The formation of a thin film on the mesh anode (13)
], 3b) (13b)..., so even if the area of the substrate (6) (6) (6) is increased, the main discharge will not be disturbed or disappear. Therefore, the production efficiency of the thin film deposited on the substrate (6) (6) (6) can be improved.

In the above embodiment, the movement of the mesh anode was a rotational motion that revolved around a point within the mesh, but the present invention is not limited to this, and the mesh anode may be projected from the target side to the substrate side. Any device may be used as long as it allows the mesh node to move so as to reduce the amount of time that a shadow is formed on the same location on the substrate when the mesh node is placed on the substrate. for example,
As shown by the dotted arrow B in FIG. 1(b), the mesh anode (13) is movable at a point (0
) may be used as a reciprocating motion within the range of angle O, and as shown by the dashed line arrow C in the same figure (b), the stainless steel fi (1
3c) (13C) towards a direction different from the direction of...
It may be a reciprocating motion within a predetermined distance α.

In the above embodiment, the mesh anode is formed of a ring body and a stainless steel wire to form a square mesh, but the mesh anode is not limited to this. Any material having a passage hole may be used. For example, the shape of the mesh may be diamond-shaped, or the stainless wires may be arranged in one direction (vertically or horizontally), and the gaps between the lattices may be used as passage holes for sputtered particles. A circular hole may be provided and the circular hole may be used as a passage hole for sputtered particles.

[Effects of the Invention] As described above, the sputtering apparatus according to the present invention adds a mesh anode between the target and the substrate of the conventional bias sputtering apparatus, and further moves this mesh anode to form a mesh anode. When projected from the target side to the substrate side, the structure is configured to reduce the amount of time that a shadow is formed at the same location on the substrate. This solves the problem that the film thickness in the shadowed part of the mesh anode is smaller than the film thickness in the non-shadowed part, and also ensures an improvement in the film production efficiency of the mesh anode. 1Tff of
High-quality film production is possible due to the oxidative action. That is, a uniform, high-quality thin film can be efficiently deposited on the substrate.

[Brief explanation of drawings]

FIGS. 1(a) and 1(b) show an embodiment of a sputtering apparatus according to the present invention, in which (a) is a configuration diagram, (b) is a plan view of a meshure node, and FIG. 2 is a conventional example. The configuration diagram, FIG. 3, is a configuration diagram showing a sputtering apparatus already proposed by the present applicant in Japanese Patent Application No. 54-6839, and FIG. 4 (a)
) (b) and (c) are cross-sectional views showing the state of film formation when the mesh anode mesh spacing is set to 2 mm, 4 mm, and 8 mm in FIG. 3, respectively. (2)...Target holder, (3)...Substrate holder, (5)...Target, (6)...Substrate, (8
)...sputter source, (9)...bias power supply,
(10) (13)...Menshua Nord.

Claims (5)

[Claims] (1) A mesh anode made of a conductor having a plurality of passage holes is provided between the target held in the target holder and the substrate held in the substrate holder, and a sputtering power source is provided between the target holder and the mesh anode. is connected to the substrate holder, a negative bias voltage is applied to the substrate holder, and sputtered particles sputtered from the target are attached to the surface of the substrate through the passage holes of the mesh anode. A sputtering apparatus characterized in that the mesh anode is moved so as to reduce the amount of time that a shadow is formed on the same location on the substrate when the anode is projected from the target side to the substrate side. (2) A sputtering apparatus according to claim 1, wherein the mesh anode has a plurality of meshes formed by crossing a plurality of conductive wires, and these meshes serve as passage holes for sputtered particles. (3) A sputtering apparatus according to claim 1 or 2, wherein the mesh anode is moved as a rotational movement that rotates around a point within the passage hole of the mesh anode. (4) The sputtering apparatus according to claim 1 or 2, wherein the mesh anode is moved as a reciprocating motion over a predetermined distance in a direction that does not match the direction of the conductor of the mesh anode. (5) A sputtering apparatus according to claim 1 or 2, wherein the mesh anode is moved as a reciprocating motion that reciprocates at a predetermined angle around a point within the passage hole of the mesh anode.