JPS6167310A - Agc amplifier circuit - Google Patents
Agc amplifier circuitInfo
- Publication number
- JPS6167310A JPS6167310A JP18988284A JP18988284A JPS6167310A JP S6167310 A JPS6167310 A JP S6167310A JP 18988284 A JP18988284 A JP 18988284A JP 18988284 A JP18988284 A JP 18988284A JP S6167310 A JPS6167310 A JP S6167310A
- Authority
- JP
- Japan
- Prior art keywords
- gain control
- transistors
- turned
- transistor
- gain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/04—Modifications of control circuit to reduce distortion caused by control
Landscapes
- Control Of Amplification And Gain Control (AREA)
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は集積回路で形成するAGC増幅回路に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to an AGC amplifier circuit formed using an integrated circuit.
(従来の技術)
従来、利得制御する機能を持つ半心体集遺回路 □で形
成され九AGC増幅回路は、通常差動構成され、差動構
成するトランジスタのエミッタ間にダイオードを挿入し
ダイオードに流す電流を外部バイアスで変化させること
によシュミッタ間のインピーダンスを変化させ利得を制
御する方法が一般的に使用されておシ、その他多くの利
得制御方式がある。(Prior art) Conventionally, an AGC amplifier circuit formed of a half-core integrated circuit □ with a gain control function is usually configured differentially, and a diode is inserted between the emitters of the transistors making up the differential configuration. A commonly used method is to control the gain by changing the impedance between the schmitters by changing the flowing current with an external bias, and there are many other gain control methods.
しかしながら、いずれの場合も外部から利得制御用のバ
イアスを変化させると、信号増幅用のトランジスタの電
流も変化するため、動作点を一点に保つことが不可能で
ある。したがって、電流が低下した場合、出力信号に歪
が生じる。もしくは電流低下時の歪を改善するために、
その電流値を大きくする必要があるため、電流が増加し
た時の電流値が必要以上に大きくなり、消費電力が増加
するという欠点があった。However, in either case, if the bias for gain control is changed externally, the current of the transistor for signal amplification also changes, making it impossible to maintain the operating point at one point. Therefore, if the current decreases, the output signal will be distorted. Or to improve distortion when the current decreases,
Since the current value needs to be increased, the current value becomes larger than necessary when the current increases, resulting in an increase in power consumption.
(発明の目的)
本発明の目的は、利得制御するための外部バイアスにか
かわらず、信号増幅用トランジスタの動にある。(Object of the Invention) The object of the present invention is to operate a signal amplification transistor regardless of an external bias for gain control.
(発明の構成)
本発明のAGC増幅回路は、ベースがそれぞれ第1及び
第2の入力端子に接続されコレクタがそれぞれ第1及び
第2の出力端子に接続され第1の差動増幅回路を構成す
る第1及び第2のトランジスタと、該第1及び第2のト
ランジスタのエミッタに一端がそれぞれ接続された第1
及び第2のダイオードと、前記第1及び第2のトランジ
スタのエミッタ間に直列に接続された第1及び第2の抵
抗と、ベースがそれぞれ第1及び第2の利得制御端子に
接続されコレクタがそれぞれ前記第1及び第2のダイオ
ードの他端の共通接続点及び前記第1及び第2の抵抗の
共通接続点に接続され第2の差動増幅回路を構成する第
3及び第4のトランジスタとを含むことから構成される
。(Structure of the Invention) The AGC amplifier circuit of the present invention has a base connected to the first and second input terminals, and a collector connected to the first and second output terminals, forming a first differential amplifier circuit. a first and a second transistor, each having one end connected to the emitters of the first and second transistors;
and a second diode, and first and second resistors connected in series between the emitters of the first and second transistors, whose bases are connected to the first and second gain control terminals, respectively, and whose collectors are connected to the first and second gain control terminals, respectively. third and fourth transistors that are connected to a common connection point of the other ends of the first and second diodes and a common connection point of the first and second resistors, respectively, and configure a second differential amplifier circuit; It consists of the following.
(実施例)
以下、本発明の実施例について図面を参照して説明する
。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を示す回路図である9本実施
例は、ベースがそれぞれ第1及び第2の入力端子1.2
に接続されコレクタがそれぞれ第1及び第2の出力端子
3,4に接続され第1の差動増幅回路を構成する第1及
び第2のNPN)ラノジスタ(以下、トランジスタとい
う→5,6と、このトランジスタ5.6のエミッタにベ
ース及びコレクタがそれぞれ接続された第1及び第2の
夕°イオードとしてのダイオード接続されたトランジス
タ9゜10と、トランジスタ5,6のエミッタ間に直列
に接続された第1及び第2の抵抗7.8と、ベースがそ
れぞれ第1及び第2の利得制御端子13.14に接続さ
れコレクタがそれぞれトランジスタ9.10のエミッタ
の共通接続点及び抵抗7.8の共通接続点に接続され第
2の差動増幅回路を構成する第3及び第4のトランジス
タ11 、12とを含むことから構成される。FIG. 1 is a circuit diagram showing one embodiment of the present invention.9 In this embodiment, the base is connected to the first and second input terminals 1 and 2, respectively.
first and second NPN transistors (hereinafter referred to as transistors →5, 6, which are connected to the first and second output terminals 3 and 4 and whose collectors are respectively connected to the first and second output terminals 3 and 4 and constitute a first differential amplifier circuit); First and second diode-connected transistors 9 and 10 are connected in series between the emitters of transistors 5 and 6, the base and collector of which are respectively connected to the emitters of transistors 5 and 6. The first and second resistors 7.8 have bases connected to the first and second gain control terminals 13.14, respectively, and collectors connected to a common connection point of the emitter of the transistor 9.10 and a common connection point of the resistor 7.8. It is constructed by including third and fourth transistors 11 and 12 connected to the connection point and forming a second differential amplifier circuit.
なお、トランジスタ5.6のコレクタはそれぞれ負荷抵
抗16.17を介して電源端子18に接続され、トラン
ジスタ11.12のエミッタは共通接続され定電流回路
15を介して接地電位に接続される。Note that the collectors of the transistors 5.6 are connected to the power supply terminal 18 via load resistors 16.17, respectively, and the emitters of the transistors 11.12 are commonly connected and connected to the ground potential via the constant current circuit 15.
次に、本実施例の動作について説明する。Next, the operation of this embodiment will be explained.
仮に利得制御端子14へ基準となる基準電圧を与え、も
う一方の利得制御端子13へ利得制御電圧を与える。利
得制御端子13の利得制御電圧が利得制御端子14の基
準電圧を超えると、トランジスタ11がオンしトランジ
スタ12はオフ状態となる。この状態においては、信号
増幅用トランジスタ5.6の電流はダイオード接続され
たトランジスタ9,10を介して定電流回路15により
設定した電流の1/2ずつが流れているから、トランジ
スタ5,6の利得は最大となり、その利得は、トランジ
スタのエミッタ電流を工。、エミッタ抵抗をr6として
、26mV7エ。=r。の関係により決定されるr、と
、負荷抵抗16.17抵抗値をRLとの比(RL /
r、、 )に比例する。(ここでr、はトランジスタ5
もしくは6のr0+トランジスタ9もしくは10のr、
となる)
逆に利得制御端子13の利得制御電圧が利得制御端子1
4の基準電圧より低下すると、トランジスタ12がオン
し、トランジスタ11はオフ状態となる。この状態では
、トランジスタ5,6の電流は抵抗7.8を介して定電
流回路15により設定した電流の1/2ずつが流れてい
る。抵抗7,8の抵抗値部を負荷抵抗16.17の抵抗
[RLより大きな値を選べば選ぶほど、”L/Rε+r
@の関係(r、はトランジスタ5もしくは6のr、とな
る)より、最小利得を小さくすることが出来、最大利得
と最小利得の幅を犬きくすることが出来る。A reference voltage serving as a reference is temporarily applied to the gain control terminal 14, and a gain control voltage is applied to the other gain control terminal 13. When the gain control voltage at the gain control terminal 13 exceeds the reference voltage at the gain control terminal 14, the transistor 11 is turned on and the transistor 12 is turned off. In this state, the current of the signal amplifying transistors 5 and 6 is 1/2 of the current set by the constant current circuit 15 flowing through the diode-connected transistors 9 and 10. The gain will be maximum, and that gain will increase the emitter current of the transistor. , with the emitter resistance as r6, 26mV7e. =r. r, which is determined by the relationship, and the ratio of the load resistance 16.17 resistance value to RL (RL /
r, , ). (Here, r is the transistor 5
Or 6 r0 + transistor 9 or 10 r,
) Conversely, the gain control voltage of gain control terminal 13 is the gain control voltage of gain control terminal 1.
When the voltage drops below the reference voltage No. 4, transistor 12 is turned on and transistor 11 is turned off. In this state, currents of 1/2 of the current set by the constant current circuit 15 are flowing through the transistors 5 and 6 via the resistor 7.8. The resistance value of resistors 7 and 8 is the resistance of load resistor 16.17.
From the relationship @ (r is the r of transistor 5 or 6), the minimum gain can be made small, and the width between the maximum gain and the minimum gain can be widened.
さらにトランジスタ11.12が両方オン状態、すなわ
ち利得制御用端子13.14の電圧が等しい場合の利得
は、トランジスタ9,10のエミ、り抵抗r6と抵抗7
,8の並列の値がトランジスタ5.6ものである。Further, when both transistors 11 and 12 are on, that is, when the voltages at gain control terminals 13 and 14 are equal, the gain is determined by the emitters of transistors 9 and 10, resistor r6, and resistor 7.
, 8 in parallel is equivalent to 5.6 transistors.
以上説明したとおり本実施例によると、利得制御電圧が
どの状態でも信号増幅用トランジスタ5゜6の電流は定
電流回路15で設定した1/2ずつの関係に比例した利
得制御が行なわれているため従来回路で見られる利得制
御時の電流減少が生じ出力信号の歪の劣化が避けられる
ものである。As explained above, according to this embodiment, no matter what state the gain control voltage is in, the current of the signal amplification transistor 5.6 is gain controlled in proportion to the 1/2 relationship set by the constant current circuit 15. Therefore, the reduction in current during gain control that occurs in conventional circuits and the deterioration in distortion of the output signal can be avoided.
なお以上は、利得制御端子13の電圧を低下する方向で
利得を減少させるリバースAGC動作の説明であるが、
利得制御端子13を基準電圧とし、利得制御端子14を
利得制御電圧として選べば、制御電圧を上げる方向で利
得を減少させるフォワードAGC動作も可能となる。The above is an explanation of the reverse AGC operation in which the gain is decreased in the direction of decreasing the voltage at the gain control terminal 13.
If the gain control terminal 13 is selected as the reference voltage and the gain control terminal 14 is selected as the gain control voltage, forward AGC operation is also possible in which the gain is decreased in the direction of increasing the control voltage.
また、上記実施例においては、トランジスタとしてNP
N型を用いたが、PNP型についても本発明が適用でき
ることは言うまでもない。In addition, in the above embodiment, the transistor is NP.
Although N type was used, it goes without saying that the present invention is also applicable to PNP type.
(発明の効果)
以上、詳細説明したとおり、本発明のAGC増幅回路は
、信号増幅用としての第1の差動増幅回路を構成する信
号増幅用トランジスタの電流を利得制御端子に与えられ
る基準電圧と利得制御電圧に対応して、抵抗又はそれ自
身に流れる電流によりインピーダンスの変わるダイオー
ドを介して制御する第2の差動増幅回路を有し、利得制
御電圧がどの状態でも信号増幅用トランジスタに流れる
電流は常時一定値に保たれたまま、利得制御が行われる
ので、従来のように利得制御時に電流減少が生じ出力信
号の歪みが劣化すると言うことがないという効果を有す
る。(Effects of the Invention) As described above in detail, the AGC amplifier circuit of the present invention has a reference voltage applied to the gain control terminal to convert the current of the signal amplification transistor constituting the first differential amplifier circuit for signal amplification. and a second differential amplifier circuit that is controlled via a resistor or a diode whose impedance changes depending on the current flowing through itself in response to the gain control voltage, and the gain control voltage flows to the signal amplification transistor in any state. Since gain control is performed while the current is always kept at a constant value, there is an advantage that there is no possibility that the current decreases during gain control and deteriorates the distortion of the output signal as in the conventional case.
第1図は本発明の一実施例を示す回路図である。
1.2・・・・・・入力端子、3.4・・・・・・出力
端子、5.6・・・・・NPN )ランジスタ、7.8
・・・・・・抵抗、9,10,11゜12・・・・・・
NPNI−ランジスタ、13.14・・曲利得制御端子
、 ′15・・・・・・定電流回路、16.17・
・・・・・負荷抵抗、18・・・・・・電源端子。
代理人 弁理士 内 原 −パゝゝ6、 、−)FIG. 1 is a circuit diagram showing an embodiment of the present invention. 1.2...Input terminal, 3.4...Output terminal, 5.6...NPN) transistor, 7.8
...Resistance, 9,10,11°12...
NPNI-transistor, 13.14... Curved gain control terminal, '15... Constant current circuit, 16.17.
...Load resistance, 18...Power supply terminal. Agent Patent Attorney Uchihara -P6, ,-)
Claims (1)
レクタがそれぞれ第1及び第2の出力端子に接続され第
1の差動増幅回路を構成する第1及び第2のトランジス
タと、該第1及び第2のトランジスタのエミッタに一端
がそれぞれ接続された第1及び第2のダイオードと、前
記第1及び第2のトランジスタのエミッタ間に直列に接
続された第1及び第2の抵抗と、ベースがそれぞれ第1
及び第2の利得制御端子に接続されコレクタがそれぞれ
前記第1及び第2のダイオードの他端の共通接続点及び
前記第1及び第2の抵抗の共通接続点に接続され第2の
差動増幅回路を構成する第3及び第4のトランジスタと
を含むことを特徴とするAGC増幅回路。first and second transistors having bases connected to first and second input terminals and collectors respectively connected to first and second output terminals and forming a first differential amplifier circuit; and first and second diodes each having one end connected to the emitter of the second transistor, first and second resistors connected in series between the emitters of the first and second transistors, and a base. are the first
and a second gain control terminal, the collectors of which are connected to a common connection point of the other ends of the first and second diodes and a common connection point of the first and second resistors, respectively, a second differential amplification device. An AGC amplifier circuit comprising third and fourth transistors forming the circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18988284A JPS6167310A (en) | 1984-09-11 | 1984-09-11 | Agc amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18988284A JPS6167310A (en) | 1984-09-11 | 1984-09-11 | Agc amplifier circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6167310A true JPS6167310A (en) | 1986-04-07 |
Family
ID=16248755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18988284A Pending JPS6167310A (en) | 1984-09-11 | 1984-09-11 | Agc amplifier circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6167310A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0358603A (en) * | 1989-07-27 | 1991-03-13 | Nec Corp | Gain control circuit |
JPH05118101A (en) * | 1991-10-29 | 1993-05-14 | Isao Kuboyama | Protection method for roof tile |
JP2008135909A (en) * | 2006-11-28 | 2008-06-12 | Nippon Telegr & Teleph Corp <Ntt> | Variable gain circuit |
-
1984
- 1984-09-11 JP JP18988284A patent/JPS6167310A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0358603A (en) * | 1989-07-27 | 1991-03-13 | Nec Corp | Gain control circuit |
JPH05118101A (en) * | 1991-10-29 | 1993-05-14 | Isao Kuboyama | Protection method for roof tile |
JP2008135909A (en) * | 2006-11-28 | 2008-06-12 | Nippon Telegr & Teleph Corp <Ntt> | Variable gain circuit |
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