JPS6163015U - - Google Patents
Info
- Publication number
- JPS6163015U JPS6163015U JP14737184U JP14737184U JPS6163015U JP S6163015 U JPS6163015 U JP S6163015U JP 14737184 U JP14737184 U JP 14737184U JP 14737184 U JP14737184 U JP 14737184U JP S6163015 U JPS6163015 U JP S6163015U
- Authority
- JP
- Japan
- Prior art keywords
- radial
- diameter tapered
- bearing
- double
- tapered surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Bearings And Hydrostatic Bearings (AREA)
Description
第１図は本考案の実施例の縦断面図、第２図ａ
は第１図の荷重の大きい方の給気孔の軸方向Ａか
らみた配置図、第２図ｂは荷重の小さい方の給気
孔の軸方向Ｂからみた配置図で、符号２１，２２
は内径テーパ面３１１，３１２は外径テーパ面、
２４は給気孔である。
Figure 1 is a vertical sectional view of an embodiment of the present invention, Figure 2a
1 is a layout diagram of the air supply hole with the larger load as seen from the axial direction A, and FIG.
are inner diameter tapered surfaces 311, 312 are outer diameter tapered surfaces,
24 is an air supply hole.
Claims (1)
され、互いに内方もしくは外方に傾斜した２個所
の内径テーパ面を有する外側輪と、前記内径テー
パ面に対応する外径テーパ面を有する内側輪と、
前記内側輪もしくは外側輪を所定間隔に離間する
スペーサとを備え、前記内径テーパ面と前記外径
テーパ面との間に気体薄膜が形成される複列のラ
ジアル軸受部を有する複列静圧気体軸受において
、それぞれの前記ラジアル軸受部に作用するラジ
アル荷重の大きさが異る場合に、それぞれの前記
ラジアル軸受部のラジアル変位がほぼ等しくなる
ように、あらかじめそれぞれのラジアル軸受部の
ラジアル剛性を違えたことを特徴とする複列静圧
気体軸受。 (2) 前記ラジアル軸受部が前記内径テーパ面若
しくは前記外径テーパ面に多数開口する給気孔を
備える多数孔形絞りで構成されている実用新案登
録請求の範囲第２項記載の複列静圧気体軸受。 (3) 一方の前記ラジアル軸受部が他方のラジア
ル軸受部の給気孔の数よりも多い給気孔を備えて
他方のラジアル軸受部よりも大きいラジアル負荷
を支承する実用新案登録請求の範囲第２項記載の
複列静圧気体軸受。[Claims for Utility Model Registration] (1) A housing, an outer ring that is fitted onto the inner diameter of the housing and has two inner diameter tapered surfaces that are inclined inwardly or outwardly from each other, and that corresponds to the inner diameter tapered surfaces. an inner ring having an outer diameter tapered surface;
a spacer that separates the inner ring or the outer ring at a predetermined interval; and a double-row static pressure gas bearing having a double-row radial bearing portion in which a gas thin film is formed between the inner diameter tapered surface and the outer diameter tapered surface. In a bearing, when the magnitude of the radial load acting on each radial bearing part is different, the radial rigidity of each radial bearing part is made different in advance so that the radial displacement of each radial bearing part is approximately equal. A double-row static pressure gas bearing characterized by: (2) The double-row static pressure device according to claim 2, wherein the radial bearing portion is constituted by a multi-hole diaphragm having a large number of air supply holes opened on the inner diameter tapered surface or the outer diameter tapered surface. gas bearing. (3) Scope of Utility Model Registration Claim 2, wherein one of the radial bearings has a greater number of air supply holes than the other radial bearing and supports a larger radial load than the other radial bearing. Double row hydrostatic gas bearing as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14737184U JPS6163015U (en) | 1984-10-01 | 1984-10-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14737184U JPS6163015U (en) | 1984-10-01 | 1984-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6163015U true JPS6163015U (en) | 1986-04-28 |
Family
ID=30705599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14737184U Pending JPS6163015U (en) | 1984-10-01 | 1984-10-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6163015U (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| JP2011229371A (en) * | 2010-04-20 | 2011-11-10 | Gebruder Klocker Gmbh | Device for forming leno selvedge |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131825A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Gas bearing having guide hole on bearing part |
| JPS56131826A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Box-type gas bearing with partition plate |
-
1984
- 1984-10-01 JP JP14737184U patent/JPS6163015U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131825A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Gas bearing having guide hole on bearing part |
| JPS56131826A (en) * | 1980-03-15 | 1981-10-15 | Hamana Tekko Kk | Box-type gas bearing with partition plate |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| JP2011229371A (en) * | 2010-04-20 | 2011-11-10 | Gebruder Klocker Gmbh | Device for forming leno selvedge |
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