[go: up one dir, main page]

JPS6159312A - Optical element - Google Patents

Optical element

Info

Publication number
JPS6159312A
JPS6159312A JP17944284A JP17944284A JPS6159312A JP S6159312 A JPS6159312 A JP S6159312A JP 17944284 A JP17944284 A JP 17944284A JP 17944284 A JP17944284 A JP 17944284A JP S6159312 A JPS6159312 A JP S6159312A
Authority
JP
Japan
Prior art keywords
crystal
optical element
optical
rbhseo4
polarized light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17944284A
Other languages
Japanese (ja)
Inventor
Masato Harigai
真人 針谷
Taketsugu Tsukamoto
塚本 桓世
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP17944284A priority Critical patent/JPS6159312A/en
Publication of JPS6159312A publication Critical patent/JPS6159312A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide optical functions such as polarization and modulation at a high degree and to reduce the cost of production by constituting the optical element of a crystal having the lamellar domain structure in which the main axes of the index ellipsoid incline with each other. CONSTITUTION:The crystal having the lamellar domain structure in which the main axes of the index ellipsoid incline with each other is used as the optical element. The embodiment of such crystal is enumerated by RbHSeO4, Gd2(MoO4)3, etc. The single crystal of RbHSeO4 is obtd. by a production process consisting in adding Rb2SeO4 and H2SeO4 at an equal mole each to water, heating the same to melt, holding the melt for several days at about 35 deg.C then taking the supernatant, putting the seed crystal of RbHSeO4 therein and resting the same. When incident light 2 is made incident to the optical element 1 manufactured by cutting such single crystal perpendicularly to the (a) axis or (b) axis, the exit light is separated to two kinds (A, A') or four kinds of linearily polarized light (A, A', B, B') according to the incident angle.

Description

【発明の詳細な説明】 皮4分駄 本発明は、結晶体からなる光学素子に関し、より詳細に
は、光測光素子、光偏向素子、光分岐路素子、光スイツ
チング素子等の光制御デバイスに適用しうる光学素子に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical element made of a crystal, and more specifically, it is applied to optical control devices such as optical photometry elements, optical deflection elements, optical branching elements, optical switching elements, etc. The present invention relates to an optical element that can be used.

て進む複屈折現象を利用した偏光素子としては、方解石
が用いられている。然るに、方解石は、高価である上に
良質の大きな結晶が得られないことや素子としての切出
しが難しいこと等の欠点を有している。又、光変調素子
としては、KDPやLj、 T a Oaが使用されて
いるが、これらと例えば光スィッチとして用いる場合は
、偏光子と検光子の間に素子を挟み、これに電界を印加
することにより偏光面を90度回転させて光のオン・オ
フを行っており、機構が複雑化する傾向がある。
Calcite is used as a polarizing element that utilizes the phenomenon of birefringence. However, calcite has drawbacks such as being expensive, not being able to obtain large crystals of good quality, and being difficult to cut into elements. In addition, KDP, Lj, and T a Oa are used as light modulation elements, but when using these as an optical switch, for example, the element is sandwiched between a polarizer and an analyzer, and an electric field is applied to it. As a result, the plane of polarization is rotated 90 degrees to turn on and off the light, which tends to complicate the mechanism.

−目一−1匁 本発明は、以上の点に鑑みなされたものであって、偏光
や変調等の光学的機能を高度に発揮すると共に製造が容
易で安価な光学素子を提供することを目的とする。
-1-1 Momme The present invention was made in view of the above points, and an object thereof is to provide an optical element that highly exhibits optical functions such as polarization and modulation, and is easy to manufacture and inexpensive. shall be.

購] 本発明は、上記の目的を達成させるため、屈折率楕円体
の主軸が相互に傾くと共に層状分域構造を有する結晶か
ら光学素子を構成することを特徴としたものである。
In order to achieve the above object, the present invention is characterized in that an optical element is constructed from a crystal in which the principal axes of index ellipsoids are mutually inclined and have a layered domain structure.

以下、本発明の一実施例に基づき具体的に説明する。本
例の光学素子は、RbHSeO4の結晶体から成るが、
その製造方法は次の通りである。
Hereinafter, a detailed description will be given based on one embodiment of the present invention. The optical element of this example is made of a crystal of RbHSeO4,
The manufacturing method is as follows.

先ず、よく洗浄されたパイレックス製の三角フラスコ(
容量:300cc)中に純水200ccとRb、、5e
a4及びH,,5eO4を各々等モルづつ投入し、液温
が50°Cにコントロールされたウォータバス中で溶解
させる。次に、ウォータバスの液温が35℃になる様に
設定し、その状態で3日間放置する。この結果、フラス
コの底部にRbHSeO4と推定される結晶が析出する
ので、あらためてこの上澄液をよく洗浄された三角フラ
スコ中に投入し同時にRbHSeO4の種結晶を入れて
15日間放置する。これにより、大きさが約1. Or
nX IQ ImX 10 nwnmn程度結晶が得ら
れる。この結晶をX線回折で解析すると、空間部I□(
C1)の三斜晶系に属するRbHSeO4の結晶で(0
01)面に平行な破開面を有している事が確認される。
First, take a well-washed Pyrex Erlenmeyer flask (
Capacity: 300cc) with 200cc of pure water and Rb, 5e
Equal moles of a4 and H, 5eO4 are added and dissolved in a water bath whose temperature is controlled at 50°C. Next, the liquid temperature in the water bath was set to 35° C., and the solution was left in that state for 3 days. As a result, crystals presumed to be RbHSeO4 are precipitated at the bottom of the flask, so this supernatant liquid is poured into a well-washed Erlenmeyer flask, seed crystals of RbHSeO4 are added at the same time, and the flask is left for 15 days. This results in a size of approximately 1. Or
A crystal of about nX IQ ImX 10 nwnmn is obtained. When this crystal is analyzed by X-ray diffraction, the space I□(
C1) is a crystal of RbHSeO4 belonging to the triclinic system (0
It is confirmed that the fracture surface is parallel to the 01) plane.

この様にして得られた結晶を、a軸又はb軸に垂直にカ
ットして大きさが5 mm X 5 +nm X 1 
mn程度の平行平板の結晶素子を作成すれば、本例の光
学素子が得られる。この場合、RbHSeO,は、その
物性からカットが容易であり、所望の光学素子を簡単に
得ることができる。
The crystal thus obtained was cut perpendicularly to the a-axis or b-axis to a size of 5 mm x 5 + nm x 1.
The optical element of this example can be obtained by creating a parallel plate crystal element of about mn. In this case, RbHSeO is easy to cut due to its physical properties, and a desired optical element can be easily obtained.

以上の如くして得られた光学素子の光学的特性測定結果
について、次に説明する。今、a軸及びb軸に各々垂直
にカットした試料素子を夫々aカット板及びbカット板
とする。第1a図及び第1b図に示す如く、これらの試
料1に対して、出方i m W、波長6328人のHe
−Neレーザ2を照射した。尚、両図において図示され
ている試料1は、共にbカット板である。その結果、第
1a図に示されるレーザ2の入射角αが00のときは、
aカット板及びbカット板において共に出射光として2
種類の直線偏光A、A’ が得られた。そして、第1b
図に示される入射角αが17″の場合は、4種類の直線
偏光A、B、A’ 、B’ が得られた。ここで、入射
角αを変化させた場合に、aカッ1へ板ではα。=24
.3″以上で、bカット板ではC6=1.5.8°以上
で、夫々出射光が43一 種類の直線偏光となる事が観察された。これは、本例の
結晶が互いに平行な層状分域構造から成り分域内の屈折
率楕円体が分域壁に対して交互に所定角度だけ傾いてい
ることによる。
The results of measuring the optical characteristics of the optical element obtained as described above will be explained next. Now, the sample elements cut perpendicularly to the a-axis and the b-axis are referred to as an a-cut plate and a b-cut plate, respectively. As shown in FIGS. 1a and 1b, for these samples 1, the He
-Ne laser 2 was irradiated. The samples 1 shown in both figures are b-cut plates. As a result, when the incident angle α of the laser 2 shown in FIG. 1a is 00,
Both the a-cut plate and the b-cut plate have 2 as emitted light.
Types of linearly polarized light A and A' were obtained. And part 1b
When the incident angle α shown in the figure is 17'', four types of linearly polarized light A, B, A', and B' are obtained.Here, when the incident angle α is changed, α on the board = 24
.. 3" or more, and C6 = 1.5.8° or more for the b-cut plate, it was observed that the emitted light became 43 types of linearly polarized light. This is because the crystals in this example are arranged in parallel layers. It has a domain structure and the refractive index ellipsoids within the domain are alternately tilted at a predetermined angle with respect to the domain wall.

第2図は、aカット板及びbカット板の双方において得
られる4種類の偏光の出射角β(偏向角)を入射角αに
対してプロットしたものである。これによれば、全般的
にaカット板の方がbカット板よりも各偏光間の出射角
βの差が大きいこと、即ち、出射光の分離度合が大きい
ことが分かる。
FIG. 2 shows the output angles β (deflection angles) of four types of polarized light obtained in both the a-cut plate and the b-cut plate, plotted against the incident angle α. According to this, it can be seen that the difference in the output angle β between each polarized light is generally larger in the a-cut plate than in the b-cut plate, that is, the degree of separation of the emitted light is greater.

従来、−軸性及び二軸性結晶において結晶に入射した光
が2種類の直線偏光に分離して出射することは知られて
いたが、本例の結晶の如く4種類の直線偏光に分離する
ことは報告されておらず、この特性を基に光学素子とし
ての多くの有用な応用技術を開発することが可能である
Conventionally, it was known that in -axial and biaxial crystals, the light incident on the crystal is separated into two types of linearly polarized light and emitted, but as in the case of the crystal in this example, it is separated into four types of linearly polarized light. This has not been reported, and it is possible to develop many useful application technologies as optical elements based on this property.

今、bカット板について、入射角αが0°及び17″の
ときの各偏光の強度を入射光を100として相対的に示
すと、第1表の如くなる。
Now, for the b-cut plate, the relative intensity of each polarized light when the incident angle α is 0° and 17″ is shown in Table 1, with the incident light being 100.

第  1  表 第1表では、出射される4種類の偏光の内でも入射角α
が17°のときの偏光Aの強度が、他と比べて顕著シこ
弱いことが示されている。ここで、bカット板に対し電
場を印加した場合に、入射角αが17°のときのその最
も強度が弱い偏光Aにおける強度変化を示すと、第3図
の如くなる。これによれば、電界強度の絶対値が約0〜
2kV/anの範囲で偏光の強度に大きな変化が現われ
ていることが分かる。従って、この特性を利用すれば、
結晶に電界を印加するだけで鋭敏な光のオン・オフが可
能となり、簡単な構造で高性能の光スィッチを安価に得
ることができる。
Table 1 In Table 1, among the four types of polarized light emitted, the incident angle α
It is shown that the intensity of polarized light A when is 17° is significantly weaker than the others. Here, when an electric field is applied to the b-cut plate, the intensity change in polarized light A, which has the weakest intensity when the incident angle α is 17°, is shown in FIG. 3. According to this, the absolute value of the electric field strength is about 0 to
It can be seen that a large change appears in the intensity of polarized light in the range of 2 kV/an. Therefore, if you use this property,
By simply applying an electric field to the crystal, light can be turned on and off in a sensitive manner, making it possible to obtain a high-performance optical switch at low cost with a simple structure.

以上の測定結果から得られる本例の結晶の光学的特性は
、次の通りである。
The optical properties of the crystal of this example obtained from the above measurement results are as follows.

イ、入射角により出射光が2又は4種類の直線偏光に分
離する。
B. The emitted light is separated into two or four types of linearly polarized light depending on the incident angle.

口、 出射角(偏向角)が大きい。Mouth, the output angle (deflection angle) is large.

ハ、 電場及び応力等により層状分域が敏感に消滅或い
は再生し、得られた直線偏光が応答感度良くオン・オフ
される。
C. The layered domain is sensitively annihilated or regenerated by electric fields, stress, etc., and the obtained linearly polarized light is turned on and off with good responsiveness.

上述した本例のRb)(Sea、結晶が有する光学的特
性を利用して、有用な光スィッチ、光分岐路素子、光測
光素子及び光偏向素子等の光学素子を簡単な構造で安価
に製造することができる。
Utilizing the optical properties of Rb) (Sea, crystal in this example described above), optical elements such as useful optical switches, optical branching path elements, optical photometric elements, and optical deflection elements can be manufactured at low cost with a simple structure. can do.

尚、結晶体はRbH8eo4に限らず、屈折率楕円体の
主軸が相互に傾いた層状分域構造を有する結晶体である
Gd2(MoO4)3やB i4 T j30 x 2
等によっても、上記実施例と同様な光学的特性を得るこ
とができる。
Incidentally, the crystal body is not limited to RbH8eo4, but also Gd2(MoO4)3 and B i4 T j30 x 2 which are crystal bodies having a layered domain structure in which the principal axes of the refractive index ellipsoids are mutually inclined.
It is also possible to obtain optical characteristics similar to those of the above embodiments.

効果 以上、詳述した如く、本発明によれば、屈折率楕円体の
主軸が相互に傾いた層状分域構造を有する結晶体を光学
素子として用いることにより、優れた光学的機能を発揮
するとともに構造が簡単で安価に製造可能な光学素子を
得ることができる。
Effects As detailed above, according to the present invention, by using a crystal body having a layered domain structure in which the principal axes of refractive index ellipsoids are mutually inclined as an optical element, excellent optical functions can be exhibited, and It is possible to obtain an optical element that has a simple structure and can be manufactured at low cost.

尚、本発明は」二記の特定の実施例に限定されるもので
はなく、本発明の技術的範囲内において種々の変形が可
能であることは勿論である。
It should be noted that the present invention is not limited to the two specific embodiments, and it goes without saying that various modifications can be made within the technical scope of the present invention.

【図面の簡単な説明】[Brief explanation of the drawing]

第1a図及び第1b図は夫々本発明の]一実施例として
の光学素子の特性を測定する状態を示した各説明図、第
2図は入射角に対する出射角の変化を各偏光別に示した
グラフ図、第3図は電界強度に対する偏光Aの強度変化
を示したグラフ図である。 (符号の説明) 1: 試料(結晶素子) 2: レーザ(入射光) A、A″、B、B″: 直線偏光(出射光)特許出願人
    株式会社 リ コ −=7− 第1a図 第1b図 第2図 手続補正書 昭和59年12月X14日 特許庁長官  志 賀   学 殿 1、事件の表示   昭和59年 特 許 願 第17
9442号2、発明の名称   光  学  素  子
3、補正をする者 事件との関係   特許出願人 住所  東京都大田区中馬込1丁目3番6号名称   
 (674)  株式会社  リ  コ  −4、代理
人 6、補正により増加する発明の数   な し7、補正
の対象     明細書及び図面8、補正の内容   
  別紙の通り 補正の内容 10本願明細書中、「特許請求の範囲」の欄の記載を下
記の通り補正する。 「1.屈折率楕円体の主軸が相互にtrnzt、一層状
分域構造を有する結晶からなることを特徴とする光学素
子。 2、上記第1項において、前記結晶は強誘電体且つ強弾
性の結晶であることを特徴とする光学素子。 3、上記第1項において、前記結晶はRbH5eO4か
ら成ることを特徴とする光学素子。」 ■0本願明細書中2「発明の詳細な説明」の欄の記載を
下記の通り補正する。 1、明細書第2頁第18行〜第19行の[相互に傾くと
共に層状分域構造を有する」を[相互に傾いた層状分域
構造を有する」と補正する。 2、明細書第6頁に掲載した第1表を次の様に補正する
。 3、明細書第6頁第9行の「17°のときのその最も強
度が弱い偏光A」を「17°のときの偏光A」と補正す
る。 ■0本願添付図面の第1b図を別添の図面に赤印で示し
た如く補正する。 (以  」二) 第1b図
Figures 1a and 1b are explanatory diagrams showing the state in which the characteristics of an optical element according to an embodiment of the present invention are measured, respectively, and Figure 2 shows changes in the output angle with respect to the incident angle for each polarization. A graph diagram, FIG. 3, is a graph diagram showing intensity changes of polarized light A with respect to electric field strength. (Explanation of symbols) 1: Sample (crystal element) 2: Laser (incident light) A, A'', B, B'': Linearly polarized light (outgoing light) Patent applicant Ricoh Co., Ltd. -=7- Figure 1a Figure 1b Figure 2 Procedural amendment December 14, 1980 Manabu Shiga, Commissioner of the Patent Office 1, Indication of the case 1982 Patent Application No. 17
9442 No. 2, Title of the invention Optical element 3, Relationship to the case of the person making the amendment Patent applicant address 1-3-6 Nakamagome, Ota-ku, Tokyo Name
(674) Rico Co., Ltd. -4, Agent 6, Number of inventions increased by amendment None 7, Subject of amendment Description and drawings 8, Contents of amendment
Contents of amendment 10 The description in the "Claims" column of the specification of the present application is amended as follows as shown in the attached sheet. "1. An optical element characterized by being made of a crystal having a single-layer domain structure in which the principal axes of the refractive index ellipsoids are mutually trnzt. 2. In the above item 1, the crystal is a ferroelectric and ferroelastic material. An optical element characterized in that it is a crystal. 3. An optical element characterized in that in the above item 1, the crystal is made of RbH5eO4." ■0 2 "Detailed Description of the Invention" column in the specification of the present application The description has been amended as follows. 1. In the specification, page 2, lines 18 to 19, "having a mutually inclined layered domain structure" is corrected to "having a mutually inclined layered domain structure". 2. Table 1 published on page 6 of the specification is amended as follows. 3. Correct "Polarized light A with the weakest intensity at 17°" on page 6, line 9 of the specification to "Polarized light A at 17°." ■0 Figure 1b of the drawings attached to this application is amended as shown in red in the attached drawings. (hereinafter ``2) Figure 1b

Claims (1)

【特許請求の範囲】 1、屈折率楕円体の主軸が相互に傾くと共に層状分域構
造を有する結晶からなることを特徴とする光学素子。 2、上記第1項において、前記結晶は強誘電体且つ強弾
性の結晶であることを特徴とする光学素子。 3、上記第1項において、前記結晶はRbHSeO_4
から成ることを特徴とする光学素子。
[Scope of Claims] 1. An optical element characterized in that the principal axes of the refractive index ellipsoids are mutually inclined and are made of a crystal having a layered domain structure. 2. The optical element according to item 1 above, wherein the crystal is a ferroelectric and ferroelastic crystal. 3. In the above item 1, the crystal is RbHSeO_4
An optical element characterized by comprising:
JP17944284A 1984-08-30 1984-08-30 Optical element Pending JPS6159312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17944284A JPS6159312A (en) 1984-08-30 1984-08-30 Optical element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17944284A JPS6159312A (en) 1984-08-30 1984-08-30 Optical element

Publications (1)

Publication Number Publication Date
JPS6159312A true JPS6159312A (en) 1986-03-26

Family

ID=16065931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17944284A Pending JPS6159312A (en) 1984-08-30 1984-08-30 Optical element

Country Status (1)

Country Link
JP (1) JPS6159312A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115598758A (en) * 2022-09-09 2023-01-13 清华大学(Cn) Method for generating structured light based on spherulite birefringence

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839049A (en) * 1971-09-18 1973-06-08
JPS4839058A (en) * 1971-09-18 1973-06-08
JPS4839053A (en) * 1971-09-18 1973-06-08
JPS4839059A (en) * 1971-09-18 1973-06-08
JPS48101950A (en) * 1972-03-01 1973-12-21
JPS5047593A (en) * 1973-08-29 1975-04-28
JPS5062074A (en) * 1973-09-27 1975-05-27
JPS5694326A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Optical switch

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839049A (en) * 1971-09-18 1973-06-08
JPS4839058A (en) * 1971-09-18 1973-06-08
JPS4839053A (en) * 1971-09-18 1973-06-08
JPS4839059A (en) * 1971-09-18 1973-06-08
JPS48101950A (en) * 1972-03-01 1973-12-21
JPS5047593A (en) * 1973-08-29 1975-04-28
JPS5062074A (en) * 1973-09-27 1975-05-27
JPS5694326A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Optical switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115598758A (en) * 2022-09-09 2023-01-13 清华大学(Cn) Method for generating structured light based on spherulite birefringence

Similar Documents

Publication Publication Date Title
US4428873A (en) Electrooptical element
KR100188377B1 (en) Polarization Sensing Spectrometer and Manufacturing Method Thereof
JPS58109859A (en) Optical voltage/electric field measuring device
JPH1068816A (en) Phase difference plate and circularly polarizing plate
KR880701394A (en) Smectic liquid crystal device
JPS5577717A (en) Light circulator
JPS5692518A (en) Liquid crystal display device
Kurtzig Faraday rotation in birefringent crystals
JPS6159312A (en) Optical element
JPH06254958A (en) Polyvinyl alcohol resin stretchable film
JPS5898709A (en) Polarizing plate
JPS6337699B2 (en)
JPH04343303A (en) Polarizing plate and liquid crystal display device
Tsukamoto Deflection of light by ferroelectric-ferroelastic RbHSeO4
KR850007888A (en) Manufacturing method of polarizer
KR940005967A (en) Magneto-optical scanning device comprising a polarization-sensitive beam splitter, a method of manufacturing the same and a beam splitter
JP2003107475A (en) Liquid crystal device
JPH1090517A (en) Iodine-based polarizing plate
JPS61261725A (en) By-pass optical switch having monitor function
JP2004361787A (en) Retardation plate and circular polarizing plate
Bodnar Some peculiarities of rotation of polarization plane in quartz
JPS5937527A (en) Liquid crystal display element
WO2024185820A1 (en) Polarization interference element, and filter
Guilbert et al. Optical characteristics of triclinic rubidium hydrogen selenate
JPS59166905A (en) Polarizing plate