JPS6153706B2 - - Google Patents
Info
- Publication number
- JPS6153706B2 JPS6153706B2 JP53073742A JP7374278A JPS6153706B2 JP S6153706 B2 JPS6153706 B2 JP S6153706B2 JP 53073742 A JP53073742 A JP 53073742A JP 7374278 A JP7374278 A JP 7374278A JP S6153706 B2 JPS6153706 B2 JP S6153706B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- tungsten oxide
- electrochromic
- transparent
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 35
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 24
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 12
- 239000003792 electrolyte Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 150000004763 sulfides Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004042 decolorization Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明は、電圧印加により可逆的発消色を示す
いわゆるエレクトロクロミツク(以下ECとい
う)素子に関するものであり、更に詳しくは一対
の透明導電性膜を有する透明基板と、該透明導電
性膜上に形成されたEC薄膜と該透明基板間に挾
持された透明電解質と該透明電解質を封入する封
止部材とからなる透過型EC素子に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a so-called electrochromic (hereinafter referred to as EC) device that exhibits reversible color development and decolorization upon application of voltage, and more specifically relates to a transparent substrate having a pair of transparent conductive films and , relates to a transmission type EC element comprising an EC thin film formed on the transparent conductive film, a transparent electrolyte sandwiched between the transparent substrate, and a sealing member encapsulating the transparent electrolyte.
従来この種のEC素子においては、素子構成
上、対称型と非対称型が提案されている。対称型
は第1図に示すように透明導電性表示電極及び対
向電極2,2′を有する透明基板1,1′と、該電
極2,2′上に同種のEC薄膜3,3′を形成し、
前記一対の基板で電解質5を挾持し、周辺を封止
部材6でシールしたものである。一方非対称型は
対向電極に金属やカーボンなどの不活性電極材料
を用いたものである。現在では、この両者のうち
素子の寿命の点から不活性電極では不充分と考え
られ、対称型の構成を採用するのが一般的であ
る。この場合には表示電極と対向電極の両極上に
同種のEC薄膜例えば酸化タングステン薄膜を形
成するため、表示の行なわれない場合にも対向電
極上の酸化タングステンは着色状態にある。従つ
て観視者からこれを隠すためにマスキング材4が
必要となつていた。又、この様な構成のために透
過型の素子を得ることは不可能であつた。 Conventionally, symmetric and asymmetric types have been proposed for this type of EC element in terms of element configuration. As shown in Fig. 1, the symmetrical type has a transparent substrate 1, 1' having a transparent conductive display electrode and counter electrodes 2, 2', and EC thin films 3, 3' of the same type formed on the electrodes 2, 2'. death,
An electrolyte 5 is sandwiched between the pair of substrates, and the periphery is sealed with a sealing member 6. On the other hand, the asymmetric type uses an inert electrode material such as metal or carbon for the counter electrode. Currently, it is considered that an inert electrode is insufficient from the viewpoint of the life of the device, and a symmetrical structure is generally adopted. In this case, since the same type of EC thin film, such as a tungsten oxide thin film, is formed on both the display electrode and the counter electrode, the tungsten oxide on the counter electrode remains colored even when no display is performed. Therefore, a masking material 4 is required to hide this from viewers. Furthermore, it has been impossible to obtain a transmission type element due to such a configuration.
本発明はこの様な点に関して検討を加えたもの
で、前記対称型素子において、対向電極上に形成
するEC薄膜を改良し、素子の透過型化を可能に
したものである。 The present invention has been made with consideration to these points, and has improved the EC thin film formed on the counter electrode in the symmetrical element, thereby making it possible to make the element transmissive.
即ち、本発明は対向配置された一対の透明導電
性膜を有する透明基板と、該透明導電性膜上に形
成した一対のEC薄膜と、前記一対の透明基板間
に挟持された透明で、該EC薄膜の光学的性質を
変えうるイオンを含む電解質と、該電解質を封入
する封止部材とからなるEC素子において、前記
EC薄膜の一方は電圧印加によりイオン及び電子
の吸収状態で光学的性質の変化の領域が可視域を
含み、放出状態で可視域を含まないEC薄膜であ
り、他方はこの状態変化により生じる光学的性質
変化の主たる波長域が実質的に可視域を含まない
結晶質酸化タングステンを含む薄膜であることを
特徴とするEC素子を提供するものである。 That is, the present invention provides a transparent substrate having a pair of transparent conductive films arranged opposite to each other, a pair of EC thin films formed on the transparent conductive film, and a transparent substrate sandwiched between the pair of transparent substrates. In an EC element comprising an electrolyte containing ions capable of changing the optical properties of an EC thin film and a sealing member encapsulating the electrolyte, the above-mentioned
One of the EC thin films is an EC thin film in which the optical properties change in the ion and electron absorption state when a voltage is applied, including the visible range, and in the emitting state, which does not include the visible range. The present invention provides an EC element characterized in that it is a thin film containing crystalline tungsten oxide in which the main wavelength range in which properties change does not substantially include the visible range.
本発明は、かゝる構成をとることにより、EC
素子内に必要とされていたマスキング材が不要と
なり、構成が簡素化されると共に、製造上も容易
なものとなる。又透過型素子であるため、後方か
らの照明が可能になり、後方に背景板を置くこと
により背景のカラー化も容易に行なえる。更には
素子の透過型化によりEC素子の用途もデイスプ
レイに限らず窓ガラス、鏡等の調光にも利用でき
る。 By adopting such a configuration, the present invention enables EC
The masking material that was required inside the device is no longer necessary, and the structure is simplified and manufacturing is also facilitated. Furthermore, since it is a transmission type element, illumination from the rear is possible, and by placing a background plate at the rear, the background can be colored easily. Furthermore, by making the element transmissive, the application of the EC element is not limited to displays, but can also be used for dimming windows, mirrors, etc.
以下、図面を用いて本発明による透過型素子を
詳細に説明する。 Hereinafter, the transmission type element according to the present invention will be explained in detail using the drawings.
第2図は本発明に係る透過型EC素子であり、
透明導電性電極22を有する透明基板21の電極
22上に表示用EC薄膜23を形成する。該EC薄
膜23は通常の手段例えばEB法で形成した非晶
質酸化タングステン膜が用いられる。透明基板2
1′には透明導電性対向電極22′が形成され、該
対向電極22′上にEC特性を起こすようなイオン
と電子が可逆的に出入りするが、可視域では光学
的変化をひき起こさないような結晶質酸化タング
ステンを含むEC薄膜23′が形成される。該結晶
質酸化タングステンを含むEC薄膜23′は次の様
な性質を有している。 FIG. 2 shows a transmission type EC element according to the present invention,
A display EC thin film 23 is formed on the electrode 22 of a transparent substrate 21 having a transparent conductive electrode 22. The EC thin film 23 is an amorphous tungsten oxide film formed by a conventional method such as the EB method. Transparent substrate 2
A transparent conductive counter electrode 22' is formed on the counter electrode 1', and ions and electrons that cause EC characteristics reversibly enter and exit the counter electrode 22', but the counter electrode 22' is arranged so as not to cause optical changes in the visible range. An EC thin film 23' containing crystalline tungsten oxide is formed. The EC thin film 23' containing crystalline tungsten oxide has the following properties.
(1) 電位の制御によりイオンが拡散しうる程度の
多孔構造を有する。(1) It has a porous structure that allows ions to diffuse by controlling the potential.
(2) 拡散したイオンの電荷を補償する電子がドリ
フトしてイオンの近傍に到達するような易動度
を有する。(2) It has such mobility that electrons that compensate for the charge of the diffused ions drift and reach the vicinity of the ions.
(3) 用格子、イオン、電子の3者が相互作用を行
ないカラーセンターを形成する。(3) The lattice, ions, and electrons interact to form a color center.
(4) カラーセンターにトラツプされた電子がかな
りな程度非局在化できるような結晶性を有し、
カラーセンターは可視域に吸収を持たない。(4) It has crystallinity such that electrons trapped in the color center can be delocalized to a considerable degree;
Color centers have no absorption in the visible range.
かゝる結晶質酸化タングステンを含むEC薄膜
23′は例えば次のようにして形成される。酸化
タングステンを1×10-4Torr〜5×10-3Torr、
より好ましくは5×10-4Torr〜2×10-3Torrの
真空度において蒸着して多孔性の酸化タングステ
ン非晶質薄膜を形成し、次いで350℃〜450℃の温
度で熱処理して多孔性の結晶質薄膜としたもので
ある。 The EC thin film 23' containing such crystalline tungsten oxide is formed, for example, as follows. Tungsten oxide at 1×10 -4 Torr to 5×10 -3 Torr,
More preferably, a porous tungsten oxide amorphous thin film is formed by vapor deposition at a vacuum level of 5×10 -4 Torr to 2×10 -3 Torr, and then heat-treated at a temperature of 350° C. to 450° C. to form a porous tungsten oxide film. This is a crystalline thin film.
前記した一対のEC薄膜を形成した基板21,
21′で透明電解質25を挾持し周辺を封止部材
26でシールしたものである。本発明のEC素子
においては、第1図で示した従来の素子で必要で
あつたマスキング材4は不要である。 A substrate 21 on which the pair of EC thin films described above are formed,
A transparent electrolyte 25 is held between 21' and the periphery thereof is sealed with a sealing member 26. In the EC element of the present invention, the masking material 4 required in the conventional element shown in FIG. 1 is unnecessary.
本発明のEC素子に電圧を印加すると、表示極
22を負にした場合、酸化タングステン非晶質薄
膜中にイオンと電子がとり込まれ、
WO3(非晶質)+xMe++xe-→
MexWO3(非晶質)
なる反応が起き、素子は外観上青色に変化する。
この時の分光曲線を第3図に示す。次いで極性
を反転して対向電極を負にすると、表示極では前
記反応の逆の反応が起き青色から元の透明状態に
もどる。この時の分光曲線を第3図に示す。 When a voltage is applied to the EC element of the present invention and the display electrode 22 is made negative, ions and electrons are taken into the tungsten oxide amorphous thin film, and WO 3 (amorphous) + xMe + + xe - → MexWO 3 (Amorphous) A reaction occurs and the element turns blue in appearance.
The spectral curve at this time is shown in FIG. Then, when the polarity is reversed and the counter electrode becomes negative, a reaction opposite to the above reaction occurs at the display electrode, and the blue color returns to the original transparent state. The spectral curve at this time is shown in FIG.
一方、対向電極ではこの時
WO3(結晶)+xMe++xe- →MexWO3(結晶)
なる反応が起き、表示極と同量の電荷の出入りが
起きるので、全体の系は電荷的にバランスがとれ
て安定な反応となる。しかしこの場合対向電極上
に於ては肉眼ではほとんど変化が認められず素子
全体が透明な状態になる。この時の分光曲線を第
4図に示す。 On the other hand, at this time, the reaction WO 3 (crystal) + xMe + +xe - →MexWO 3 (crystal) occurs at the counter electrode, and the same amount of charge as that at the display electrode occurs, so the overall system is balanced in charge. This results in a stable reaction. However, in this case, almost no change is observed on the counter electrode with the naked eye, and the entire device becomes transparent. The spectral curve at this time is shown in FIG.
本発明の対極の結晶質酸化タングステンを含む
EC薄膜は上記した如く、多孔性の状態で形成さ
れた後、焼成により適度に結晶化された結晶質酸
化タングステンを含む薄膜が最も望ましく、上記
の性質を満足すれば例えばモリブテン、バナジウ
ム、クロム、マンガン、ニオブ、タンタルの酸化
物、硫化物含んでいてもよい。 Contains crystalline tungsten oxide as a counter electrode of the present invention
As mentioned above, the most desirable EC thin film is a thin film containing crystalline tungsten oxide, which is formed in a porous state and then appropriately crystallized by firing. It may contain oxides and sulfides of manganese, niobium, and tantalum.
表示極EC薄膜は公知のものが全て使用され、
タングステン、モリブデン、バナジウム、クロ
ム、マンガン、ニオブ、タンタル、チタンから選
ばれる少なくとも1種の金属の酸化物、硫化物が
挙げられるが、好ましくは酸化タングステンを含
む非晶質膜がよい。 All known display electrode EC thin films are used.
Examples include oxides and sulfides of at least one metal selected from tungsten, molybdenum, vanadium, chromium, manganese, niobium, tantalum, and titanium, and preferably an amorphous film containing tungsten oxide.
又、電解質も公知のものが全て用いられるが、
プロトン、アルカリ金属のイオン、銀、タリウム
の1価イオンを含む塩をプロピレンカーボネー
ト、アセトニトリル、ジメチルスルホキシド、N
―メチルピロリドン等の有機溶媒に溶解したもの
が好ましい。 Also, all known electrolytes can be used, but
Salts containing protons, alkali metal ions, silver, and thallium monovalent ions can be mixed with propylene carbonate, acetonitrile, dimethyl sulfoxide, N
- Preferably, it is dissolved in an organic solvent such as methylpyrrolidone.
本発明のEC素子は、従来のEC薄膜と組合せ
て、EC特性を起こすようなイオンと電子が可逆
的に出入りし、しかも可視域での光学的変化をひ
き起さないような材料を対極として用いた透過型
素子であるため、第5図に示すようにEC素子5
0の後方に光源51と反射板52を配置し、或は
第6図のようにEC素子60の後方に光源61と
光散乱板62を配置して照明することができる。 The EC element of the present invention can be used in combination with a conventional EC thin film, in which ions and electrons that cause EC characteristics can reversibly enter and exit, and a material that does not cause optical changes in the visible range is used as a counter electrode. Since it is a transmission type element used, the EC element 5 as shown in FIG.
Illumination can be achieved by arranging a light source 51 and a reflecting plate 52 behind the EC element 60, or by arranging a light source 61 and a light scattering plate 62 behind the EC element 60 as shown in FIG.
又、第7図に示すようにEC素子70の後方に
紙、金属等の散乱性反射板71を配置し反射型と
して用いることもできる。更には、第8図に示す
ようにEC素子80の背面に着色背景板81を置
いて背景をカラー化し表示効果を高めることもで
きる。 Further, as shown in FIG. 7, a scattering reflector plate 71 made of paper, metal, etc. can be arranged behind the EC element 70 to use it as a reflective type. Furthermore, as shown in FIG. 8, a colored background plate 81 may be placed on the back surface of the EC element 80 to color the background and enhance the display effect.
実施例
透明導電性膜を有する硝子基板上に通常の電子
銃を備えた真空蒸着装置により、2×10-5Torr
で酸化タングステン膜を約0.5μの厚さに形成
し、これを表示電極板とした。又、同様の方法に
より、6×10-4Torrで酸化タングステンを約1.0
μの厚さに形成し、更にこれを空気中で390℃、
20分の熱処理を行なつたものを対向電極板とし
た。Example A vacuum deposition apparatus equipped with an ordinary electron gun was applied to a glass substrate having a transparent conductive film at 2×10 -5 Torr.
A tungsten oxide film was formed to a thickness of approximately 0.5μ, and this was used as a display electrode plate. In addition, by the same method, tungsten oxide was heated at about 1.0
It is formed to a thickness of μ, and then heated at 390℃ in air.
A counter electrode plate was prepared after heat treatment for 20 minutes.
このようにしてできた一対の電極板を対向配置
させ、周囲にスペーサーを配置し封止した後所定
の注入孔よりLiClO4を0.5M/lの濃度でプロピ
レンカーボネートに溶解した電解質を注入し、こ
の注入孔を封止して素子を完成した。この状態で
表示極を負にして素子に3.5Vの電圧を印加する
と表示電極上の酸化タングステンの非晶質膜は青
く変化した。次いで表示極を正にして1.5Vの電
圧を印加したところ表示極上の青色は消え、対向
電極上の酸化タングステンの結晶質薄膜には肉眼
的にほとんど変化が生じなかつた。この後更に
1.5Vでスイツチングをくり返したが、表示電極
上の酸化タングステンが着消色をくり返すだけで
あり、対向電極上の酸化タングステンにはほとん
ど変化がみられず透過型の素子が得られた。この
素子は30万回のスイツチング後も何らの変化も認
められず良好に作動した。 The pair of electrode plates thus formed were placed facing each other, a spacer was placed around the periphery for sealing, and then an electrolyte containing LiClO 4 dissolved in propylene carbonate at a concentration of 0.5 M/l was injected through a predetermined injection hole. This injection hole was sealed to complete the device. In this state, when a voltage of 3.5V was applied to the device with the display electrode negative, the amorphous tungsten oxide film on the display electrode turned blue. Next, when a voltage of 1.5 V was applied with the display electrode positive, the blue color on the display electrode disappeared, and there was almost no macroscopic change in the crystalline thin film of tungsten oxide on the counter electrode. further after this
Switching was repeated at 1.5V, but the tungsten oxide on the display electrode simply changed color and faded, and the tungsten oxide on the counter electrode showed almost no change, resulting in a transmissive element. This device operated well without any changes even after 300,000 switching cycles.
第1図は従来の対称型EC素子の断面図、第2
図は本発明による透過型ECC素子の断面図、
1,1′,21,21′は透明基板、2,2′,2
2,22′は透明導電性電極、3,3′、23は
EC薄膜、23′は結晶質酸化タングステンを含む
EC薄膜、4はマスキング材、5,25は電解
質、6,26は封止部材、第3図及び第4図はそ
れぞれ表示電極及び対向電極上のEC薄膜の分光
曲線。第5図〜第8図は本発明の透過型EC素子
の応用例を示す。
50,60,70,80はEC素子、51,6
1は光源、52は反射板、62は光散乱板、71
は散乱性反射板、81は着色背景板を夫々示す。
Figure 1 is a cross-sectional view of a conventional symmetrical EC element, Figure 2
The figure is a cross-sectional view of a transmission type ECC element according to the present invention.
1, 1', 21, 21' are transparent substrates, 2, 2', 2
2, 22' are transparent conductive electrodes, 3, 3', 23 are transparent conductive electrodes.
EC thin film, 23' contains crystalline tungsten oxide
EC thin film; 4 is a masking material; 5 and 25 are electrolytes; 6 and 26 are sealing members; FIGS. 3 and 4 are spectral curves of the EC thin film on the display electrode and counter electrode, respectively. 5 to 8 show examples of application of the transmission type EC element of the present invention. 50, 60, 70, 80 are EC elements, 51, 6
1 is a light source, 52 is a reflecting plate, 62 is a light scattering plate, 71
81 indicates a scattering reflector, and 81 indicates a colored background plate.
Claims (1)
透明基板と、該透明導電性膜上に形成した一対の
エレクトロクロミツク薄膜と、前記一対の透明基
板間に挟持された透明で、該エレクトロクロミツ
ク薄膜の光学的性質を変えうるイオンを含む電解
質と、該電解質を封入する封止部材とからなるエ
レクトロクロミツク素子において、前記エレクト
ロクロミツク薄膜の一方は電圧印加によりイオン
及び電子の吸収状態で光学的性質の変化の領域が
可視域を含み、放出状態で可視域を含まないエレ
クトロクロミツク薄膜であり、他方はこの状態変
化により生じる光学的性質変化の主たる波長域が
実質的に可視域を含まない結晶質酸化タングステ
ンを含む薄膜であることを特徴とするエレクトロ
クロミツク素子。 2 エレクトロクロミツク薄膜の一方が非晶質酸
化タングステンを含む薄膜であり、他方が結晶質
酸化タングステンを含む薄膜である特許請求の範
囲第1項記載のエレクトロクロミツク素子。[Scope of Claims] 1. A transparent substrate having a pair of transparent conductive films arranged opposite to each other, a pair of electrochromic thin films formed on the transparent conductive film, and a transparent substrate sandwiched between the pair of transparent substrates. In an electrochromic device comprising a transparent electrolyte containing ions that can change the optical properties of the electrochromic thin film and a sealing member that encapsulates the electrolyte, one of the electrochromic thin films is ionized by applying a voltage. and an electrochromic thin film in which the range of changes in optical properties in the electron absorption state includes the visible range and does not include the visible range in the emission state; An electrochromic device characterized by being a thin film containing crystalline tungsten oxide that does not substantially include the visible region. 2. The electrochromic device according to claim 1, wherein one of the electrochromic thin films is a thin film containing amorphous tungsten oxide, and the other is a thin film containing crystalline tungsten oxide.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7374278A JPS552207A (en) | 1978-06-20 | 1978-06-20 | Transmission type electrochromic element |
US06/045,664 US4278329A (en) | 1978-06-20 | 1979-06-05 | Electrochromic device with transmissive counter electrode |
FR7915132A FR2434448A1 (en) | 1978-06-20 | 1979-06-13 | COUNTER ELECTRODE FOR USE IN AN ELECTROCHROMIC DEVICE |
GB7921530A GB2023867B (en) | 1978-06-20 | 1979-06-20 | Counter electrode for electrochromic device |
DE19792924898 DE2924898A1 (en) | 1978-06-20 | 1979-06-20 | COUNTERELECTRODE FOR AN ELECTROCHROME DEVICE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7374278A JPS552207A (en) | 1978-06-20 | 1978-06-20 | Transmission type electrochromic element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS552207A JPS552207A (en) | 1980-01-09 |
JPS6153706B2 true JPS6153706B2 (en) | 1986-11-19 |
Family
ID=13526989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7374278A Granted JPS552207A (en) | 1978-06-20 | 1978-06-20 | Transmission type electrochromic element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS552207A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62193208U (en) * | 1986-05-28 | 1987-12-08 | ||
JPH057686B2 (en) * | 1985-12-03 | 1993-01-29 | Amp Inc | |
JPH0514252Y2 (en) * | 1986-05-30 | 1993-04-16 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56118938A (en) * | 1980-02-21 | 1981-09-18 | Japan Exlan Co Ltd | Water absorbable acrylic fiber molded article |
JPH07279A (en) * | 1993-02-22 | 1995-01-06 | Hironami Terajima | Rice cooker without producing steam |
DE69514489T2 (en) | 1994-12-13 | 2002-09-12 | Japan Exlan Co. Ltd., Osaka | Fine particles with a high degree of moisture adsorption and desorption and process for their production |
-
1978
- 1978-06-20 JP JP7374278A patent/JPS552207A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH057686B2 (en) * | 1985-12-03 | 1993-01-29 | Amp Inc | |
JPS62193208U (en) * | 1986-05-28 | 1987-12-08 | ||
JPH0514252Y2 (en) * | 1986-05-30 | 1993-04-16 |
Also Published As
Publication number | Publication date |
---|---|
JPS552207A (en) | 1980-01-09 |
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