JPS6152717A - Constant voltage power supply circuit - Google Patents
Constant voltage power supply circuitInfo
- Publication number
- JPS6152717A JPS6152717A JP59174699A JP17469984A JPS6152717A JP S6152717 A JPS6152717 A JP S6152717A JP 59174699 A JP59174699 A JP 59174699A JP 17469984 A JP17469984 A JP 17469984A JP S6152717 A JPS6152717 A JP S6152717A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- input
- control
- power supply
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000002955 isolation Methods 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 241000283153 Cetacea Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Bipolar Integrated Circuits (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、乾電池使用の定電圧電源回路において、その
乾電池の逆接続対策を施した電源回１洛に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a constant voltage power supply circuit using dry batteries, which is provided with countermeasures against reverse connection of the dry batteries.
（従来技術）
入出方間電位差を少なくした乾電池電圧入力の従来の定
電圧電源回路を第３図に示す。(Prior Art) FIG. 3 shows a conventional constant voltage power supply circuit with a dry battery voltage input that reduces the potential difference between input and output.
同図において、入力側子ｌに印加した電圧Ｖｉｎは、シ
リーズ接続の制御トランジスタＱ１の内部抵抗の変化に
よって調整されて出カケ１１１子２には安定した出力電
圧Ｖｏｕｔが得られる。In the figure, the voltage Vin applied to the input terminal 1 is adjusted by the change in internal resistance of the series-connected control transistor Q1, and a stable output voltage Vout is obtained at the output terminal 111 and terminal 2.
即ち、入力電圧Ｖｉｎが印加されると、起動紙Ｒ１を流
れる電流がトランジスタＱ２を導通させ、これにより制
御トランジスタＱ１は抵抗Ｒ２及びそのトランジスタＱ
２を介してベース電流が流れて導通し、出力α１１１子
２側に電圧ＶｏｕＬが現れる。That is, when the input voltage Vin is applied, the current flowing through the starting paper R1 makes the transistor Q2 conductive, which causes the control transistor Q1 to connect to the resistor R2 and its transistor Q.
A base current flows through the terminal 2 and conducts, and a voltage VouL appears on the output α111 side 2.
そして、出力端子２側に現れた電圧Ｖｏｕｔは抵抗Ｒ３
とＲ４により分圧されて出力電圧検出用のトランジスタ
Ｑ３のベースに加わり、そのｔＵ圧が所定値より低けれ
ばそのトランジスタＱ３の導通度が少なく、よってトラ
ンジスタＱ４のベース電位が上昇してそのトランジスタ
Ｑ４がより導通し、制御トランジスタＱ１″により多く
のベース電流が供給され、そのコレクタ電流が増加して
出力電圧Ｖｏｕｔが上昇する。Then, the voltage Vout appearing on the output terminal 2 side is the resistance R3
The voltage is divided by R4 and applied to the base of the transistor Q3 for output voltage detection, and if the tU voltage is lower than a predetermined value, the conductivity of the transistor Q3 is low, so the base potential of the transistor Q4 rises and the voltage is applied to the base of the transistor Q3 for detecting the output voltage. becomes more conductive, more base current is supplied to the control transistor Q1'', its collector current increases, and the output voltage Vout rises.
一方、出力電圧Ｖｏｕｔが西く、トランジスタＱ３のベ
ースに加わる電圧が所定値より高ければ、そのトランジ
スタＱ３の導通度が増し、トランジスタＱ４の導通度が
減少してトランジスタＱｌのベース電流が減少し、出力
電圧Ｖｏｕｔが低下する。On the other hand, if the output voltage Vout is high and the voltage applied to the base of the transistor Q3 is higher than a predetermined value, the conductivity of the transistor Q3 increases, the conductivity of the transistor Q4 decreases, and the base current of the transistor Ql decreases. The output voltage Vout decreases.
なお、出力端子２に７ば圧が現れた後は、抵抗Ｒｆｉを
介して流れるベース電流によりトランジスタＱ５が専通
ずるので、トランジスタＱ２は遮［す↑し、そのトラン
ジスタＱ２がトランジスタＱｌの制御α１１には影響を
与えることばない。Note that after a voltage of 7V appears at the output terminal 2, the base current flowing through the resistor Rfi turns on the transistor Q5, so the transistor Q2 is shut off, and the transistor Q2 controls the control α11 of the transistor Ql. is an influential word.
ところで、この回路をモノリシックの半導体４７５積回
路装置で構成した場合、その入力部分は第４図に示すよ
うな構造となる。３はｐ型半導体基板、４１〜４４はｐ
型のアイソレーション、５１〜５３は高濃度のｎ型（ｎ
′″）の埋込層、６１〜６３はｎ型のエピタキシャル
成長層である。By the way, if this circuit is constructed from a monolithic semiconductor 475 integrated circuit device, its input portion will have a structure as shown in FIG. 3 is a p-type semiconductor substrate, 41 to 44 are p-type semiconductor substrates, and 41 to 44 are p-type semiconductor substrates.
Type isolation, 51-53 are high concentration n-type (n
The buried layers 61 to 63 of ``'') are n-type epitaxially grown layers.
制御トランジスタＱ１はエピタキシャル成ＷＩ’３６１
の部分にラテラル構造のｐｎｐトランジスタとして構成
されてる。７１は出力端子２に接続されるコレクタ領域
、７２ば入力側子ｌに接続されるエミッタ領域、７３は
ベース引出し領域である。Control transistor Q1 is epitaxially formed WI'361
The part is configured as a lateral structure pnp transistor. 71 is a collector region connected to the output terminal 2, 72 is an emitter region connected to the input terminal 1, and 73 is a base extraction region.
起動用の抵抗Ｒ１はエピタキシャル成長層６２の部分に
、１゛＋７濃度のｐ型（ｐ＋）の領Ｊ＋ｉ８１により形
成されている。８２は高濃度のｎ型（ｎ＋）で成る高電
位印加１ｍである。また、起動用トランジスタＱ２はエ
ピタキシャル成長）Ｈ６３のｐｌｉ分にｎｐｎトランジ
スタとして構成されている。９１は起動抵抗領域８１に
接続されるベース領域、９２はエミッタ領域、９３はコ
レクタ引出し領域である。The starting resistor R1 is formed in the epitaxial growth layer 62 by a p-type (p+) region J+i81 with a concentration of 1'+7. 82 is 1 m of high potential application made of highly concentrated n-type (n+). Further, the starting transistor Q2 is formed as an npn transistor in the pli portion of the epitaxially grown transistor H63. 91 is a base region connected to the starting resistance region 81, 92 is an emitter region, and 93 is a collector lead-out region.
ところが、このような半導体集積回路装置では、高電位
印加層８２とアイソレーション４３との間に第３図の破
線で示したような寄生ダイオードＤが形成される。However, in such a semiconductor integrated circuit device, a parasitic diode D as shown by the broken line in FIG. 3 is formed between the high potential application layer 82 and the isolation 43.
このため、入力側子工に接続すべき乾電池の極性を逆に
した場合、その寄生ダイトートＤを大電流が流れて、乾
電池が消耗することは勿論のこと、半導体集積回路装置
も破壊するという問題がある。For this reason, if the polarity of the dry cell battery to be connected to the input side slave device is reversed, a large current will flow through the parasitic diode D, which not only consumes the dry cell battery but also destroys the semiconductor integrated circuit device. There is.
そこで、入力側子１のラインに逆流阻止用のダイオード
が構成されるよう半導体装置を形成すれ Ｉば
良いが、このようにすればそのダイオード部分において
ほぼ０．７ｖの電圧が降下し、その分だけυ１力電圧が
低下し、乾電池１個の電圧を入力側子とするような場合
には、その電圧のほぼ半分が損失となるという別の問題
が惹起される。Therefore, it is possible to form a semiconductor device so that a reverse current blocking diode is configured in the line of the input side terminal 1, but if this is done, a voltage of approximately 0.7V will drop at the diode part, and the voltage will be reduced by that amount. When the voltage of one dry battery is used as an input terminal, another problem arises in that approximately half of the voltage becomes a loss.
（発明の目的）
本発明は斯かる点に鑑みて成されたもので、その目的は
、乾電池を逆接続しても破壊は起らず、しかも出力電圧
の低下も伴わないようにした定電圧電源回路を提供する
ことである。(Object of the Invention) The present invention has been made in view of the above points, and its purpose is to provide a constant voltage that does not cause damage even if dry batteries are connected in reverse, and also does not cause a drop in output voltage. The purpose is to provide a power supply circuit.
（発明の構成）
このために本発明では、入力側子と出力１：Ｍｉ、！半
間にシリーズに接続された制ｆｉｌｌｌ ）ランジスタ
の入力側に起動抵抗を接続し、譲起動砥杭により上記制
御トランジスタに起動用のベース電流を流すようにした
定電圧電源回路において、上記制御トランジスタの入力
側と上記起動抵抗との間に、ｐｎｐｌ−ランジスタのベ
ースとコレクタを共通接続して形成したダイオードを順
方向接続している。(Structure of the Invention) For this purpose, in the present invention, the input side child and the output 1: Mi,! In a constant voltage power supply circuit in which a starting resistor is connected to the input side of a control transistor connected in series between half of the transistors, and a base current for starting is caused to flow through the control transistor by a yield starting grinder, the control transistor is connected in series. A diode formed by connecting the base and collector of a pnpl transistor in common is connected between the input side and the starting resistor in the forward direction.
（実施例）
以下、本発明の定電圧電源回路の実施例について説明す
る。第１図はその回路を示すものであり、本実施例では
制御トランジスタＱｌの入力側、つまりエミッタ側と起
動抵抗Ｒ１との間に、ベースとコレクタを共通接続して
ダイオードとして機能させるようにしたトランジスタＱ
６を順方向接続して構成している。(Example) Hereinafter, an example of the constant voltage power supply circuit of the present invention will be described. Figure 1 shows the circuit, and in this embodiment, the base and collector are commonly connected between the input side, that is, the emitter side, of the control transistor Ql and the starting resistor R1, so that it functions as a diode. transistor Q
6 are connected in the forward direction.
第２図はその半導体集積回路装置の構造を示すもので、
アイソレーション４５と４６の間のエピタキシャル成長
層６４に、ラテラル構造のｐｎｐトランジスタＱ６を構
成している。１０１はコレクタ領域、１０２はエミッタ
領域、１０３ばへ一ス引出し領域である。起動抵抗Ｒ１
はアイソレーション４６と４７の間のエピタキシャル成
長ｒ￥４６２に従来と同様に構成されている。５４は埋
込層である。他は第４図と同様である。Figure 2 shows the structure of the semiconductor integrated circuit device.
A lateral structure pnp transistor Q6 is formed in the epitaxial growth layer 64 between the isolations 45 and 46. 101 is a collector region, 102 is an emitter region, and 103 is a lead-out region. Starting resistance R1
is formed in the epitaxial growth r\462 between the isolations 46 and 47 in the same manner as in the prior art. 54 is a buried layer. The rest is the same as in FIG. 4.
以上から、起動抵抗Ｒ１の上記トランジスタＱ６側とア
イソレーション４７との間には従来と同様の寄生ダイオ
ードＤが形成されるが、この寄生ダイオードＤと逆の極
性として働くようにトランジスタＱ６でなるダイオード
が接続されるので、例え乾電池を逆極性で接続したとし
ても、その乾電池からの電流はトランジスタＱ６で阻止
され、回路内に流れることはない。しかも、このトラン
ジスタＱ６は入力側子１と制御トランジスタＱ１の間に
は挿入されていないので、出力電圧がイ１！、下すると
いうごともない。From the above, a parasitic diode D similar to the conventional one is formed between the transistor Q6 side of the starting resistor R1 and the isolation 47; are connected, so even if the dry battery is connected with reverse polarity, the current from the dry battery is blocked by the transistor Q6 and will not flow into the circuit. Moreover, since this transistor Q6 is not inserted between the input side terminal 1 and the control transistor Q1, the output voltage is 1! , there's no way I'm going to give it up.
（発明の効果）
以上から本発明によれば、入出力間の電位差を増大させ
ないで電源の逆接続対策が行なわれるようになる。また
集積回路化も容易であり、低い入力電圧でも動作可能と
なるという特徴がある。(Effects of the Invention) As described above, according to the present invention, a countermeasure against reverse connection of a power supply can be taken without increasing the potential difference between input and output. It is also easy to integrate into a circuit, and can operate even at low input voltages.
第１１２１は本発明の一実施例の定電圧電源回路の回路
図、第２図はその定電圧電源回路を半導体集積回１／３
装置で構成した場合の人力部分の断面図、’ｔｓ ３図
は従来の定電圧電源回路の回路図、第４図はその第３図
の定電圧１１力１１回路を半導体集積回路装Ｈ′（で構
成した場合の人力部分の断面図である。
■・・・入力側子、２・・・出力端子、３・・・ｐ型半
導体基板、４１〜４７・・・アイソレーション、５１〜
５４・・・埋込層、６１〜６４・・・ｎ型エピタキシャ
ル成長層、７１・・・トランジスタＱ１のコレクタ領域
、７２・・・同エミッタ領域、７３・・・同ベース引出
し領域、８１・・・抵抗Ｒ１の領域、８２・・・高電位
印加層、９１・・・トランジスタＱ２のベース領域、９
２・・・同エミッタ領域、９３・・・同コレクタ引出し
Ｍｉ域、１０１・・・・・・トランジスタＱ６のコレク
タ領域、１０２・・・同エミッタ領域、１０３・・・同
ベース引出し領域。
特許出願人 新日本無線株式会社
代 理 人 弁理士 長尾常明
も
手 １ｔＩ−７ｄ ネｉｌｉ 、ｒＪｇ
甚ト （自発）１．事件の表ンバ
昭和５９年特許願第１７４６９９’弓−２、＠明の名称
定電圧電鯨］１旧洛
３、補正をするｆｆ
事件との関係 １！［許出１頭人
住 所 東京ＪｉＢ港区虎）門−−］’ ｌ＝１２２番
１４号名 称 新日本ｊＩＩＥ線１朱式会社
４、代理人
ら、補正により増加する発明の数 なし７、Ｍｉ正の
対象 明８１１１ ’Ｊ−Ｆ補正の内容（舶願昭５
９−１７４６９９ ）■、［特許ａｌ’？求の範囲」を
次のように前止する。
ｒ（４１，入力Ｊｉｉ、ｌ了と出力端イ間にシリーズに
接続された制御トランジスタの入力側に起動抵抗を接続
し、該起動抵抗により上記制御１−ランジスタに起動用
のベース電流を流すようにした定電１１二電源回路にお
いて、上記制御トランジスタの入力側と上記起動抵抗と
の間に１．ｐｎｐトランジスタのベースとフレフタを共
通接続して形成したダイオードを順方向接続したことを
９４徴とする定電１１二電源回路。
２、明ｓｊ＋＋書第２頁第５１１目の１−起動抵ＲＩＪ
を１−起動抵抗Ｒ１ＪにｉｉＴ ＋［する。1121 is a circuit diagram of a constant voltage power supply circuit according to an embodiment of the present invention, and FIG.
Figure 3 is a circuit diagram of a conventional constant voltage power supply circuit, and Figure 4 is a cross-sectional view of the human power part when configured as a device. It is a cross-sectional view of the human power part when configured with: ■... Input side child, 2... Output terminal, 3... P-type semiconductor substrate, 41-47... Isolation, 51-
54... Buried layer, 61-64... N-type epitaxial growth layer, 71... Collector region of transistor Q1, 72... Emitter region of transistor Q1, 73... Base extraction region, 81... Region of resistor R1, 82... High potential application layer, 91... Base region of transistor Q2, 9
2... Emitter region, 93... Collector extraction region Mi, 101... Collector region of transistor Q6, 102... Emitter region, 103... Base extraction region. Patent applicant New Japan Radio Co., Ltd. Agent Patent attorney Tsuneaki Nagao Mote 1tI-7d Neili, rJg
Serious (spontaneous) 1. Display of the incident 1984 Patent Application No. 174699' Bow-2, @ Ming's name constant voltage electric whale] 1 Old Raku 3, amended ff Relationship with the incident 1! [Personal address of 1 person: Tokyo JiB Toramon, Minato-ku --]' l = 122 No. 14 Name: New Japan JIIE Line 1 Shu Shiki Kaisha 4, Agents, etc. Number of inventions increased by amendment None 7 , Mi positive object Mei 8111 'Contents of J-F amendment (Sho 5
9-174699) ■, [Patent al'? The scope of the request shall be prefixed as follows. r(41, A starting resistor is connected to the input side of the control transistor connected in series between the inputs Jii, l and the output terminal A, and the starting resistor causes the base current for starting to flow through the control transistor 1). In the constant current 11 dual power supply circuit, 1. A diode formed by commonly connecting the base and flipter of a pnp transistor is connected in the forward direction between the input side of the control transistor and the starting resistor. Constant voltage 11 dual power supply circuit. 2. 1-starting resistor RIJ, page 2, page 511 of Akira Sj++ book.
iiT + [to 1-starting resistor R1J.
Claims (1)
制御トランジスタの入力側に起動抵抗を接続し、該起動
抵抗により上記制御トランジスタに起動用のベース電流
を流すようにした定電圧電源回路において、上記制御ト
ランジスタの入力側と上記起動抵抗とのに、ｐｎｐトラ
ンジスタのベースとコレクタを共通接続して形成したダ
イオードを順方向接続したことを特徴とする定電圧電源
回路。(1) A constant voltage power supply circuit in which a starting resistor is connected to the input side of a control transistor connected in series between an input terminal and an output terminal, and the starting resistor causes a starting base current to flow through the control transistor. A constant voltage power supply circuit characterized in that a diode formed by commonly connecting a base and a collector of a pnp transistor is connected in a forward direction to the input side of the control transistor and the starting resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59174699A JPS6152717A (en) | 1984-08-22 | 1984-08-22 | Constant voltage power supply circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59174699A JPS6152717A (en) | 1984-08-22 | 1984-08-22 | Constant voltage power supply circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6152717A true JPS6152717A (en) | 1986-03-15 |
Family
ID=15983118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59174699A Pending JPS6152717A (en) | 1984-08-22 | 1984-08-22 | Constant voltage power supply circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6152717A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025740A (en) * | 1989-07-27 | 1991-06-25 | Brother Kogyo Kabushiki Kaisha | Stitch pattern sewing machine |
| US7719242B2 (en) | 2006-07-13 | 2010-05-18 | Ricoh Company, Ltd. | Voltage regulator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128641A (en) * | 1974-09-03 | 1976-03-11 | Matsushita Electric Ind Co Ltd | TEIDENATSU KAIRO |
| JPS51118909A (en) * | 1975-04-08 | 1976-10-19 | Hitachi Ltd | Transistor circuit |
-
1984
- 1984-08-22 JP JP59174699A patent/JPS6152717A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128641A (en) * | 1974-09-03 | 1976-03-11 | Matsushita Electric Ind Co Ltd | TEIDENATSU KAIRO |
| JPS51118909A (en) * | 1975-04-08 | 1976-10-19 | Hitachi Ltd | Transistor circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5025740A (en) * | 1989-07-27 | 1991-06-25 | Brother Kogyo Kabushiki Kaisha | Stitch pattern sewing machine |
| US7719242B2 (en) | 2006-07-13 | 2010-05-18 | Ricoh Company, Ltd. | Voltage regulator |
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