JPS61500755A - How to manufacture solar cells - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] This application is filed under U.S. Patent Application No. 563,292, filed December 19, 1983: No. 666,972, filed October 31, 1984, which is a continuation application. This is a partial continuation application.

This invention relates to the production of photovoltaic cells, and more particularly to the production of photovoltaic cells, and more particularly to Polycrystalline silicon layer used as plating mask for surface electrode metallization Thick lol! ! It is concerned with an improved and inexpensive method of manufacturing J-ponds.

Conventional methods for manufacturing silicon solar cells typically involve the production of silicon wafers or ribbons. forming a PN junction by diffusing a suitable beavant on the surface side; The step of etching grid-like snow scrapes and ξ turns on the protective insulating coating 1 formed on the surface of the This step involves applying nickel plating to all the silicon exposed by engraving. Step of plating copper and soot on the surface, removing the remaining part of the insulation coating layer from the surface and applying an anti-reflective coating to the newly exposed portion of the surface. Ru.

Although such a procedure can be applied to either Ig crystal or polycrystalline silicon, Considering cost, it is desirable to manufacture solar cells from polycrystalline silicon.

However, as is well known, minority carriers are lost at grain boundaries, dislocations, etc. Therefore, the efficiency achieved with polycrystalline silicon solar cells is generally lower than that of monocrystalline cells. It's not good for This situation can be solved by introducing -valent elements, such as hydrogen, into the crystal structure. Combining with defect-related dangling bonds to reduce recombination loss of minority carriers. It has been improved by making the eyes smaller.

As known in the art, important considerations when designing a photovoltaic manufacturing process are: The time and temperature combinations in any step following the hydrogen passivation step in silicon This prevents the hydrogen introduced into the substrate from diffusing from the inactivated substrate. Ru. That is, ``For example,'' water exposed to a temperature of 600°C for half an hour in a The elementary passivated photovoltaic cell is shown to be As evidenced, it has been found that almost all bonded hydrogens are lost. this It should be noted that the second junction diffusion step in the production of solar cells is Typically temperatures on the order of 900°C are required.

Hydrogen passivation typically involves heating the photovoltaic cell to a sufficiently high temperature to bond base metals such as copper. It is also possible to diffuse into the It's clear. For example, C, H, Saa ger), D.G. Sharp (D, J, 5harp), G.A. K.G. Panic (J, K, G, Pan1tz) and (JR. As shown by R, V, D'Aiello, The inertness of crystalline silicon generates hydrogen ions in the kiloelectron volt energy range. This can be done using a Kaufmann type ion source, which is used for High ion energy and fusics (e.g. 1 to 3 mian/4 a/sq. ) relatively short exposure times (e.g. 0.5 to 4 minutes) seem to be optimal. be.

Such exposure generally occurs when the board is carefully contacted with a suitable heat sink. In this case, the substrate temperature will increase to at least about 275°C. If not In some cases, temperatures in excess of 400°C are easily achieved. However, silicon mother Limit temperatures below approximately 300°C to avoid rapid diffusion of base metals into the material. This is very important. However, the substrate and radiation for thermal suppression during passivation are Manipulation of the hot body easily reduces the need for processing speed reductions in high-speed processing steps with these types of ion sources. cause Therefore, to obtain a low-cost, high-speed processing process, it is necessary to avoid the use of heat sinks. is desirable. Furthermore, we have developed an EFG type silicon ribbon that can be produced economically. In case K1-1, the unevenness of the surface makes it difficult to use the heat sink.

Moreover, hydrogen passivation is most effective when the underlying silicon surface is exposed. . Therefore, the lattice electrode pattern on the surface is defined by covering the area between the electrodes on the surface. Any “positive” plating mask used to It shouldn't be.

Co-pending U.S. Patent Application No. 563,061 (Attorney Docket No. MTA-4 9), the table of alterations that occurred during hydrogen ion beam inactivation. The surface layer is used for plating for subsequent metallization steps, including displacement plating of selected metals. Can be used as a mask. Applied to the production of silicon solar cells In the adopted implementation 1 of the method described in detail in U.S. Patent Application No. M563061, d. includes, inter alia, the following steps: (1) Induction on the surface of a shallowly bonded silicon ribbon Forming a mask for plating electrical materials and forming a mask that will later be covered with a surface electrode. (2) Exposed Silicon (3) depositing a thin layer of nickel (or similar material) on top of the plating matrix; (4) hydrogen inactivation of the bonding side of the photovoltaic cell, (5) sintering nickel to partially form nickel silicide; (6) photovoltaic metal; (7) displacement plating additional nickel on the coated portion; (7) displacing copper on the nickel; (8) applying an anti-reflective coating to the entire exposed surface of the silicon; step. The silicon is then further modified, for example to be able to connect it to an electrical circuit. will be processed. In another method, heating the material during inactivation is Provides at least a portion of the energy for the Keckel sintering step.

Such a procedure (1) allows for the removal of the initial plating mask before passivation; (2) an additional mask deposition step prior to metallization. Allows passivation prior to base metal deposition without the need for layers (during passivation) Eliminating the risk of defective photovoltaic cells caused by base metal diffusion and , the need for precise temperature control of the substrate during passivation or photolithography following passivation. (simplifies the manufacturing process by eliminating the need for a cutting step) However, this process can be further improved. In other words, it prevents base metal diffusion. The temperature control required to stop the heat (preferably below about 300°C) is unnecessary. However, the diffusion of nickel or nickel silicide within the matrix of the substrate is relatively slow. Even at this speed, there is still a risk of defective photovoltaic cells due to diffusion. do.

Additionally, the method just outlined requires additional layers on the substrate before the first metallization. therefore, additional processing is required to this extent. Requires processing and materials.

Purpose of invention Therefore, a hydrogen passivation step is required after the high temperature treatment step but before any surface metallization. It is an object of this invention to provide a processing sequence for the manufacture of solar cells containing It is.

Plating mask to prevent metallization of exposed passivation surfaces after hydrogen passivation It is another advantage of this invention to provide that kind of processing speed that does not require forming a This is the purpose of

Detailed description of the invention These and other purposes were adopted as applied to the production of silicon solar cells. This is achieved by a process in Example 2, which particularly includes the following steps. i.e. , rl) in a P-type silicon ribbon (to form a shallow junction by diffusing (su/shi) and at the same time apply phosphosilicate to the surface of the ribbon adjacent to this bond. (2) forming a layer of glass; (2) in the form of a "negative" plating mask; Printed by photo-etching (using suitable photo-L/cyst preparation and etching) Forming a grid-like electrode pattern on the silicate glass (i.e., subsequently surface electrotyping) Step 2: Leaving the phosphosilicate glass only on the area of the substrate where it is desired to attach it , (3) coating the opposite side of the silicon ribbon with aluminum paste; (4) ) heating silicon to form an alloy with aluminum; (5) photoelectronic heating; Hydrogen inertization of the bonding side of the pond and at the same time a cover between the silosilicate glass electrode patterns. Step of forming an altered layer on the uncoated silicon substrate, (6) sinking the residue (7) removing the salt glass by etching, and (7) displacing the nickel by displacement plating. : Metallization of unaltered exposed silicon and aluminum with selected metals . The silicon is then further processed to prepare it so that it can be connected to an electrical circuit, for example. It may be treated and coated with an anti-reflection coating.

As used here, the term "displacement plating" refers to plating that does not contain a reducing agent. Objects can be plated with metal without an externally applied electric field by immersing the object in a bath. Therefore, this plating necessarily involves a substitution reaction. displacement plating is electroless in that electroless plating requires a plating bath that contains a reducing agent. It is distinguished from plating.

This manufacturing monotopic order has several important advantages. After inactivating the surface electrode adhesion, The D1 material diffuses into the joint during subsequent processing steps by delaying the In particular, any risk of the photovoltaic cell becoming defective is significantly reduced. Inactivating Temperature control becomes less critical, so there is no need for heat dissipation treatment. . Therefore, this method enables fast-throughput ion beam deactivation. In addition, The method adopted is to apply the glass layer formed as a result of the method of forming the bond to a negative By using it as the body of a plating mask (remove the glass first) Both the etching stage and the coating stage (providing material for the plating mask) glass is instead removed in both stages.

The object of this invention will be partly obvious, and partly will be clear below. It will become clear. The invention is therefore illustrated in the following detailed disclosure. several stages, and one or more of these stages and each of the others. The scope of the invention is indicated in the claims and detailed description is not provided. It should be noted that this description describes solar cells according to the adopted form of this invention. It should be considered in conjunction with the accompanying drawings which illustrate the many stages involved in manufacturing. It is a kimono.

Like numerals indicate similar structures throughout the drawings.

2 in the drawings, the thicknesses and depths of some coatings and regions may be relative to each other for illustrative purposes. It is not shown exactly according to the relative proportions.

Detailed description of the invention Now referring to the drawings, the adopted embodiment of this invention is an EFG-grown P-type silicon. It is concerned with the production of solar cells from ribbons.

The first process requirement is a pre-cleaned EFG P-type conductive silicon ribbon 2. One side (hereinafter referred to as the "front side") of the junction 4 is relatively shallow (i.e., about 300 mm 0 to about 7000 angstroms deep), an N-type conductive region 6, and a Thin layers of reasonable thickness (e.g., on the order of at least 1500 angstroms) A silicate glass 8 is subjected to a calculated diffusion process. -As an example , edge-defined It is manufactured by the flm-fed growth, EFG) method and has a diameter of approximately 5Ω. A silicon ribbon of P-type conductivity with a resistivity of about 4=1 to 9:1 in a solution of HNO3 (70 cm):HF (49 cm) for about 1 to 3 minutes. Cleaned by etching at 25°C. The ribbon is then enriched with oxygen. In this example, silicon and oxygen react to form diacid. phosphorus and oxygen react to form phosphorus pentoxide, and phosphorus pentoxide and Silicon dioxide reacts to form phosphosilicate glass, which also reacts with phosphorus pentoxide and silicon. reacts to form phosphorus and silicon dioxide. Alternatively, U.S. Pat. No. 152,824, a phosphorous silicate glass formed as detailed in US Pat. It can also be used as a source for

The next step is to coat the front side of the ribbon with negative photoresist 10, as is well known in the art. It includes things. The photoresist is applied by any suitable method, e.g. by spraying. applied and then fired to drive out the organic solvents and firmly bond the phosphosilicate glass. It becomes attached. Typically, this baking heats the photoresist to temperatures between about 80°C and 1°C. This is done by heating to 10° C. for about 35 to about 60 minutes.

A moss-shaped mask, for example, the part corresponding to the finger shape of the desired electrode is transparent, and the other is covered with an opaque mask. An example of a suitable polarization pattern is Please refer to National Patent No. 3,686,036. The grid mask is then made of sufficient strength. The photoresist is exposed to ultraviolet light for a sufficient period of time to polymerize the exposed areas of the photoresist. Ru. The photoresist is then processed by treatment with one or more suitable developers, e.g. developed, such as by contact with luene and propatool or other suitable solvents. It will be done. This development step removes the unirradiated and therefore unpolymerized photons. A portion of the resist is removed. Therefore, it is possible to form a pattern with the desired grid-like electrode morphology. A portion of photoresist toA remains. Post-development and baking at approximately 140°C) The next processing stage Residual photoresist (O) has been found to improve corrosion resistance.

Following exposure and development of the photoresist (and post-development bake), this assembly For example, when exposed to a buffered oxide etchant consisting of a solution of HF and NH4F, Then, the exposed layer of phosphosilicate glass 8 is removed. For example, (P2O3)x($ 10゜)y% shinsilicate glass, the substrate is 10NH4F (40th):IHF It is removed from the substrate by heating at a temperature of about 25°C for about 15 seconds to 2 minutes. Leave. At this time, the scale under the polymerized unremoved portion 10A of the photoresist is removed. The layer 12 of phosphoric acid-filled glass patterned in the form of child electrodes remains intact.

The backside of the substrate is then coated with aluminum paste 1114. to layer 141 The aluminum paste used to form the Preferably consists of aluminum powder in a volatile organic vehicle such as lupineol. Delicious.

This step is followed by an alloying step in which the substrate is approximately 0. All of the samples that are heated to temperatures above 575°C for 25 to 2.0 minutes Volatile or thermally decomposable organic components are removed and the aluminum in the paste is silicified. Alloy bonded to the control board.

During the alloying step, the aluminum coating 14 alloys with the back side of the substrate and forms a metal alloy of about 1 A P+ region 16 having a depth of 5 to 5 microns is provided. Alloy stage; other thoughts remain This serves to remove the photoresist portion 10A by pyrolysis.

The photovoltaic cell is then hydrogen deactivated. The method adopted is that the location is about 15 crn from the board. The surface of the substrate is exposed to the hydrogen ion beam of a Kaufmann-shaped (wide beam) ion source. It is something to expose. This ion # is preferably (for hydrogen) about 20 Pressure from 50 millitorr to about 25 to 40 seconds, c, c, per minute. hydrogen flow rate, a potential between the source and the substrate of about 1700 volts DC, and a voltage of about 1 to 3 volts. It operates with a beam current at the substrate of amperes/ctn2. about 1 to about 4 The exposure time of A depth of about 20 to 80 microns to minimize rear recombination loss, i.e. 4) and at the same time that the exposed portion of the substrate 2 is approximately 100 times as deep as the This was found to be sufficient to provide an altered surface layer 18 of 200 angstroms. ing.

The exact nature of the altered surface layer 18 is unknown. However, the crystal structure The structure is somewhat destroyed and the silicon is partially exposed to hydrogen from the ion beam and SiH or 5 iH2f is formed, but in a damaged region where the material is possibly amorphous. It is thought that A small amount of carbon or one or more hydrocarbons forms the desired altered surface structure. It is said that the awn is necessary for the purpose. Where it was first installed, it was used The Kauffman ion source is equipped with a graphite mount approximately 5 inches (approximately 13 (7)) in diameter. A typical 2 x 4 inch (5 x 10 cm) ) was used to distribute power. In some cases, the silicone mounting base is black. When used in place of a cradle, the altered layer is not as strong as when a graphite pedestal is used. It did not function satisfactorily as a plating mask. established on the basis of this This hypothesis was based on the carbon or carbon particles formed by the collision of the hydrogen ion beam with the graphite table. It is believed that the hydrocarbon vapor increases the formation of a dielectric layer on the surface of the substrate.

Whatever its nature, according to this guideline it should be about 1400 to about 1700 volts. The altered surface layer 18 that is Eled at an accelerating voltage of 1 minute and a short exposure time of 1 minute is exposed changes when subsequent metallization includes displacement plating of materials such as nickel. This has been found to be sufficient to prevent subsequent metallization of the surface layer 18.

Inactivation is followed by loN H4F (40%) at a temperature of about 25°C to 40°C. : The remaining phosphosilicate glass layer 1 is removed by immersing the substrate in a solution of IHF. 2 is removed. As a result, the surface of substrate 2 is now completely exposed. This exposure On the orchid, a modified surface layer 18 is provided, in this case in the form of a desired surface electrode structure. A pattern of unaltered N1 conductivity type silicon is formed.

Next, the metallization of the photovoltaic cell takes place. Substrate is displacement plated with nickel and nickel Adhesive adhesion of the nickel layer 2 over the entire area of the aluminum coating 14 on the back side 2 and the adhesive adhesion of nickel on the front side is directly on the surface of the substrate 2. Applying layer 20 only in those areas where phosphorous silicate glass layer 12 was removed after passivation. Form. At this plating stage, the altered surface layer 18 of silicon is replaced by nickel. Forms a non-stick plating mask. The nickel layer can be plated using various displacement plating methods. It can be done by law. Preferably, it's Kirit Patel. of the method described in U.S. Pat. No. 4,321,283 to is carried out according to a displacement plating method similar to this. As a preliminary step, it is cleaned The silicon substrate surface is pre-activated with a suitable chemical. This preactivation process is Often silicone is not suitable for electroless plating methods per se and is plated on an untreated surface. Ta. This is desirable because nickel generally adheres poorly. if possible , gold chloride is used as an activator, but platinum chloride, stannous chloride, palladium monochloride or other known active agents, such as those described in U.S. Pat. No. 3,489,603. You can also use something like Then, both sides of the silicone ribbon are Preferably, water@raft or double as described in the aforementioned US Pat. No. 4,321,283. A pH of about 2.9 and coated with a layer of nickel by soaking for about 2 to 6 minutes at about room temperature. be done.

After the nickel is applied, the substrate is exposed to a nickel layer in an inert or nitrogen atmosphere. The nickel layer 2 on the front side of the substrate is heated to a temperature and time sufficient to sinter the nickel layer 2. 0 reacts with the adjacent silicon to form a nickel silicide ohmic contact. this For this purpose, the substrate is desirably subjected to a temperature of about 300° C. for about 15 to about 40 minutes. is heated. As a result, approximately 300 µm of ions is applied to the boundary between the nickel layer 20 and the substrate 2. A layer of nickel silicide is formed with a depth of 1.5 cm. The nickel layer 18 on the back side is An alloy is formed with the aluminum layer 12. The temperature of this sintering significantly exceeds 300℃. Shouldn't. The higher temperatures cause excessive penetration of the nickel layer 20 into the silicon. This is because it will cause you to If possible, remove the nickel adhesion and '$8 knot. , so that the nickel layer 20 on the front side of the substrate has a thickness of about 1000 angstroms. to control.

The nickel in layers 18 and 20 is then etched, such as with nitric acid. and may be further metallized, for example by techniques well known in the art, by displacement plating. a second layer of nickel and one or more layers of copper by displacement annealing and/or electroplating; It is desirable that the Copper plating does not adhere to damaged layers because copper does not adhere to damaged layers. Coating of the altered layer is not necessary.

After metallization, the photocell edges (not shown) are trimmed and the antireflection coating 24 is exposed to light. applied to the surface of the battery. This can be done in any of a number of known ways, e.g. This may be carried out by a chemical vapor deposition method (CVD method) or a vapor deposition method using 1O2. Or technically As is well known, reflection prevention is achieved by plasma deposition of silicon nitride at a temperature of about 150°C. A stopper film 24 may also be formed.

By way of example, the method adopted for carrying out the invention may include each of the individual steps described above. Do they follow the order set out in the adoption form, which details the steps? It is becoming more and more.

Solar cells made from EFG grown ribbons according to the method described above have an average efficiency of 2. It has been determined to exhibit an increase of 10 to 20 inches. Furthermore, regarding this material was found to significantly limit the distribution range of photovoltaic efficiency during the hydrogen inactivation step (M). are doing.

This method has many advantages. First, this method requires that the initial nickel coating be If it had been deposited on the front side before activation, it would have caused a shallow (2. by diffusion of nickel or nickel silicide during passivation, as may To eliminate the possibility that the joint 4 will be damaged. This reduces the possibility of defective photocells. In addition to the Relax requirements for management. This method therefore requires fast processing of ions during the manufacturing process. Enables beam deactivation step.

It is understood that modifications may be made to this invention while remaining within the scope of the disclosure. There will be. For example, in the adopted embodiment, the surface electrode grid pattern is photoetched. It is formed into a plating mask by the method, but it is generally used for chemical silling. to the same extent by other methods used (e.g. silk-screen printing) It will be understood that it will be well formed.

In addition, the adopted method utilizes phosphosilicate glass formed during N diffusion to generate ion beams. This method forms a team mask and defines the damaged layer pattern, but for the surface layer, Other materials 2 could also utilize the process. For example, if an N-type substrate is used as a starting material, For example, by using boron to form a bond by diffusion with boron. It would also be possible to provide an acid salt glass layer. Furthermore, if the starting materials are not bonded, If the glass is supplied without a glass layer, a suitable layer must be provided. Will. As will be appreciated, the applied layer may be etched to suit Even if it is capable of forming a plating mask or itself has a suitable shape. It may also be something that can be attached to the surface.

Further, the adopted embodiment of the method of this invention utilizes the altered layer formed by hydrogen inactivation. used to remove previously plated nickel and serve as a mask for subsequent plating. However, this method can also be used with metals other than nickel. for example, As those skilled in the art will appreciate, the surface charge in shallow junction silicon devices is The initial layer of Enoki (preferably at low temperature) is formed by ohmic contact metal formation and applied at a later stage. can serve as a barrier to diffusion of deposited copper or other base metals. It may be deposited by plating any of a number of low reactivity materials.

Metals suitable for use with copper include nickel, palladium, platinum, and copper. Contains balt and rhodium. All these materials form silicides However, the silicide layer is not essential. However, the initial metal layer is Diffusion of any metal that adheres to, serves as an ohmic contact, and is subsequently deposited In addition to acting as a barrier to be. These materials can be applied by displacement plating techniques in a manner similar to nickel. good.

Other modifications may be made without departing from the principles of the invention, such as (a) aluminum The backside area of the photovoltaic cell is shaped using flame sprayed aluminum instead of aluminum paste. or (b) nickel or palladium, platinum, cobalt and Using an alternative method of encouraging subsequent rupture of other low reactivity materials such as or (by forming a junction using fl ion implantation). I can do it. If no additional masking layer is applied to the passivation area, the Ni A layer of KEL (or other low reactivity gold R of the type previously described) is applied by displacement plating. , and an additional layer of copper shall be applied by electroplating or displacement plating. stomach.

Of course, the method provided by this invention is suitable for the production of Taiichiba Nike from EFG substrates. It is not limited. That is, for example, on a molded polycrystalline substrate or on gold-grade silicon. nipitaxial silicon, or formed by chemical or physical vapor deposition This invention also enables the formation of relatively high-efficiency solar cells using high-purity polysilicon layers. It can be used for. Furthermore, this method can also be applied to single crystal silicon. Therefore, it is possible to implement not only P-type silicon but also fiN-type silicon.

Furthermore, this method can be used to fabricate Schottky barrier diodes. , the altered layer will serve as a mask for metallization. In such cases, As will be appreciated, the metal/substrate interface is the joint and therefore the substrate It is unlikely that the bond will be applied by diffusion such as.

These and other methods may be incorporated into the foregoing without departing from the scope of the invention disclosed herein. Other changes may be made that are not included in the foregoing description or shown in the accompanying drawings. All matters herein shall be construed in an illustrative rather than a restrictive sense. It is thought that.

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Claims (16)

[Claims] 1. (a) having opposing first and second surfaces, and having a selected portion thereof on the first surface; comprising a mask in the form of a surface layer with a predetermined two-dimensional pattern to be exposed; (b) providing a silicon substrate; (b) depositing metal on the selectively exposed portion of the first surface; It is exposed to a hydrogen ion beam of sufficient intensity to form a slightly adherent surface layer. (c) removing said mask; and (d) applying metal plating to the first surface to remove the portions other than the selectively exposed portions. forming a metal layer on all portions of the first side of the A method of manufacturing a solid-state semiconductor device including in this order. 2. forming a bond adjacent to the first surface before the hydrogen beam irradiation; 2. The method of claim 1, further comprising: 3. 2. The method of claim 1, wherein said element is photosensitive. 4. The claimed invention further comprises the step of applying an anti-reflection coating to cover the first surface. The method described in Scope No. 3. 5. (a) providing a silicon substrate with opposing first and second sides; (b) forming a surface layer on the first surface of the substrate; (c) forming a predetermined secondary layer on the first surface of the substrate; A mask is formed on the surface layer by selectively etching the original pattern; selectively exposing a portion of the first surface by (d) a surface layer having only a small amount of metal attached to the selectively exposed portion of the first surface; The first surface is exposed to a hydrogen ion beam of sufficient intensity for a sufficient period of time to form (e) removing said mask; and (f) exposing said first side to a metallization stage A method of manufacturing a solid-state semiconductor device including in this order. 6. a result of bond diffusion in said substrate where said surface layer is adjacent to said first surface; 6. The method of claim 5, wherein the glass layer is formed as a result. 7. The bond is formed by diffusing phosphorus into the silicon substrate. as claimed in claim 6, thereby forming a phosphosilicate glass surface layer. How to put it on. 8. The mask is formed by photolithography using a photoresist covering the first side. 6. The method of claim 5, wherein the method is 9. Applying an aluminum coating to the second surface before removing the photoresist. and thereafter (1) alloying said coated aluminum with said silicon substrate. (2) at a temperature sufficient to effect the removal of said photoresist by pyrolysis; further comprising the step of heating said silicon substrate at a temperature and for a period of time. The method described in Scope Item 8. 10. Claim 5, wherein both said first and second sides are metallized. the method of. 11. 6. The method of claim 5, wherein said surface layer is dielectric. 12. applying an aluminum coating to said second side before metallizing said first side; and a temperature sufficient to alloy this aluminum with said silicon substrate. Claims further comprising the step of heating said aluminum for a time. The method described in paragraph 5. 13. (a) providing a silicon substrate with opposing first and second sides; (b) forming a bond on said substrate adjacent said first surface and simultaneously forming a bond on said first surface; (c) bonding the glass layer with a photoresist material; covering with a sexual covering; (d) radiating radiation onto said adhesive coating through a mask with a predetermined two-dimensional pattern; (e) chemically developing with said adhesive coating to form said adhesive coating; Selected portions of the adhesive coating are removed from said glass layer according to said predetermined pattern. the step of making it possible to (f) removing any part of said glass which is not covered by said adhesive coating; exposing selected portions of the first surface; (g) applying an aluminum coating to said second surface; (h) (1) said aluminum coating; alloying the aluminum coated with the silicon substrate and (2) heating. said at a temperature and time sufficient to effect removal of said adhesive coating by decomposition. heating the silicon substrate of (i) in said exposed selected portions of said first side to which metal only slightly adheres; Hydrogen ion beams are applied to the first surface with sufficient intensity and time to form a surface layer that (j) removing said glass layer; and (k) irradiating said glass layer. A solid-state semiconductor device including the steps of metallizing the first side and the second side of the solid-state semiconductor device in this order. How to manufacture. 14. when said first surface is sufficient to reduce minority carrier loss of said substrate; 14. irradiated with said hydrogen ion beam at an intensity of Method described. 15. The metallization includes nickel, palladium, cobalt, platinum, and rhodium. The method according to claim 13 is carried out using a metal selected from the group of metals including Method. 16. The above metallization removes nickel from a solution containing nickel salts and fluoride ions. 14. The method according to claim 13, comprising plating.