JPS6141445B2 - - Google Patents
Info
- Publication number
- JPS6141445B2 JPS6141445B2 JP12260678A JP12260678A JPS6141445B2 JP S6141445 B2 JPS6141445 B2 JP S6141445B2 JP 12260678 A JP12260678 A JP 12260678A JP 12260678 A JP12260678 A JP 12260678A JP S6141445 B2 JPS6141445 B2 JP S6141445B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- interdigital
- etching
- acoustic wave
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 238000010897 surface acoustic wave method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【発明の詳細な説明】
本発明は弾性表面フイルターの強固なワイヤー
ボンデイング部を形成する製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing method for forming a strong wire bonding portion of an elastic surface filter.
弾性表面波フイルターを高周波帯域(UHF
帯、GHz帯等)で使用する場合当然、その高周波
性からすだれ状電極幅の微細化、音速の分散性か
らより低膜厚化が必要である。弾性表面波フイル
ターの製造プロセスにおいて、電極となる金属層
の低膜厚化はそのワイヤーボンデイング強度さら
にその素子の信頼性に大きく影響する。例へば膜
厚2000Å程度のアルミニウム膜に25〓〓の金線を
超音波ボンデングするとその歩留りは約20〜30%
程度、膜厚1000Åではほとんどボンデングは不可
能となる。このため従来は、膜厚2000Å以下のす
だれ状電極を形成する場合所定の電極パターンを
形成後、ボンデイングパツト部だけをマスク再度
マスク蒸着しボンデイング可能な膜厚を確保して
いた。この方法は電極パターン表面を特殊なマス
クで覆いボンデイングパツト部分に再蒸着する方
法あるいは、電極パターン上に再度ホトレジスト
工程を行いボンデイングパツト部分を除いた部分
をレジストで覆つた後、蒸着を行うリフトオフ法
等を用いており、工程が複雑でありかつ、量産性
に欠ける欠点があつた。 Surface acoustic wave filter
Naturally, when used in the high-frequency band (band, GHz band, etc.), it is necessary to make the interdigital electrode width finer due to its high frequency properties, and to reduce the film thickness due to the dispersion of sound velocity. In the manufacturing process of surface acoustic wave filters, reducing the thickness of the metal layer that serves as the electrode greatly affects the wire bonding strength and the reliability of the device. For example, when a 25〓〓 gold wire is ultrasonically bonded to an aluminum film with a thickness of about 2000Å, the yield is about 20-30%.
At a film thickness of 1000 Å, bonding is almost impossible. For this reason, conventionally, when forming interdigital electrodes with a film thickness of 2000 Å or less, after forming a predetermined electrode pattern, only the bonding pad portions were masked and deposited again using a mask to ensure a film thickness that would allow bonding. This method involves covering the surface of the electrode pattern with a special mask and redepositing it on the bonding pad area, or using a lift-off method in which the photoresist process is performed again on the electrode pattern, the area excluding the bonding pad area is covered with resist, and then vapor deposition is performed. etc., which had the drawbacks of complicated processes and lack of mass production.
本発明は上記した従来技術の欠点をなくし、強
固でかつ製造の容易なボンデイングパツト部を有
する弾性表面波フイルターの製造方法を提供する
にある。 The present invention eliminates the above-described drawbacks of the prior art and provides a method for manufacturing a surface acoustic wave filter having a bonding pad portion that is strong and easy to manufacture.
本発明の要点は、圧電性基板上に種類の異なつ
た金属膜を多層形成し、最初にすだれ状電極と配
線電極部となる領域以外の多層金属膜の部分をエ
ツチングにより除去し、しかる後レジスト膜を残
したまま上記基板上の第2層目の金属層をケミカ
ルエツチングにより配線電極部5を残して除去し
第1層目金属層によるすだれ状電極を形成するよ
うにした弾性表面波フイルタの製造方法である。 The key point of the present invention is to form a multilayer metal film of different types on a piezoelectric substrate, first remove by etching the parts of the multilayer metal film other than the areas that will become the interdigital electrodes and wiring electrodes, and then remove the resist. A surface acoustic wave filter in which the second metal layer on the substrate is removed by chemical etching with the film remaining, leaving only the wiring electrode portion 5, thereby forming an interdigital electrode of the first metal layer. This is the manufacturing method.
以下、本発明を実施例に基づき図面により説明
する。 Hereinafter, the present invention will be explained based on examples and drawings.
第1図、第2図、第3図は本発明による製造プ
ロセスの主要工程におけるデバイス構造の断面を
示す図である。第1図に示す如く圧電性基板1上
に第1層目の金属膜、膜厚2000Åのアルミニウム
膜2を形成し、第2層目に膜厚500Å程度のクロ
ム膜3を形成しさらに第3層目に膜厚2000Åの金
属膜4を形成する。かゝる多層構造膜金属面上に
よく知られたホトレジスト工程により配線電極部
5とすだれ状電極部6とからなる所定のレジスト
パターンをワン・マスク・レベルで形成する。つ
いで第2図に示す如くレジストパターンをマスク
にしてドライブプロセス乾式プロセスによるエツ
チング、イオンエツチングにより不要部分を除去
する。この場合、プラズマエツチングまたは反応
スパツタ技術によつてでもよい。上記不要部分を
除去されたパターンの配線電極部5はすだれ状電
極部に比べ2倍以上の断面積を有して形成されて
いる。つぎに、圧電性基板1側から数えて第2層
目に形成されているクロム膜3のすだれ状電極部
分を完全に除去するまでよく知られたクロム用エ
ツチヤントにより所定時間のケミカルエツチング
を行なう。上記工程で配線電極部5はすだれ状電
極部6に比較して応面積のためエツチングによる
損復はほとんどない。 FIGS. 1, 2, and 3 are cross-sectional views of the device structure at the main steps of the manufacturing process according to the present invention. As shown in FIG. 1, a first metal film, an aluminum film 2 with a thickness of 2000 Å, is formed on a piezoelectric substrate 1, a chromium film 3 with a thickness of about 500 Å is formed as a second layer, and a third layer is formed. A metal film 4 having a thickness of 2000 Å is formed in the second layer. A predetermined resist pattern consisting of wiring electrode portions 5 and interdigital electrode portions 6 is formed at one mask level on the metal surface of such a multilayer structure film by a well-known photoresist process. Then, as shown in FIG. 2, using the resist pattern as a mask, unnecessary portions are removed by etching using a drive dry process and ion etching. In this case, plasma etching or reactive sputtering techniques may be used. The wiring electrode portion 5 of the pattern from which the unnecessary portions have been removed is formed to have a cross-sectional area more than twice that of the interdigital electrode portion. Next, chemical etching is performed for a predetermined time using a well-known chromium etchant until the interdigital electrode portion of the chromium film 3 formed in the second layer counting from the piezoelectric substrate 1 side is completely removed. In the above process, since the wiring electrode portion 5 has a more flexible area than the interdigital electrode portion 6, there is almost no damage due to etching.
上記の工程およびレジスト除去工程を経て第3
図に示す如く第1層目のアルミニウム金属膜2か
らなるすだれ状電極と第2層目クロム金属膜と金
膜3とからなる十分な膜厚を有する配線電極部6
を形成する。 After the above process and resist removal process, the third
As shown in the figure, a wiring electrode portion 6 having a sufficient film thickness consists of a first layer of an interdigital electrode made of an aluminum metal film 2 and a second layer of a chromium metal film and a gold film 3.
form.
以上説明した如く本発明による弾性表面波フイ
ルターの製造方法は従来技術の欠点をなくし、製
造容易な量産性のある配線電極部の高膜厚を確得
できるので、強固なワイヤーボンデイングが自由
に可能となり、信頼度の高い外部回路との接続が
可能である。 As explained above, the method for manufacturing a surface acoustic wave filter according to the present invention eliminates the drawbacks of the conventional technology, and can obtain a high film thickness of the wiring electrode part that is easy to manufacture and suitable for mass production, so strong wire bonding can be freely performed. This allows connection with highly reliable external circuits.
第1図、第2図、第3図は本発明による製造プ
ロセスにおける弾性表面波フイルタの各工程にお
ける断面構造の説明図である。
1:圧電性基板、2:アルミニウム金属膜、
3:クロム金属膜、4:金 金属膜、5:配線電
極部形成のレジスト膜、6:すだれ状電極部形成
のレジスト膜。
FIGS. 1, 2, and 3 are explanatory views of the cross-sectional structure of the surface acoustic wave filter at each step in the manufacturing process according to the present invention. 1: piezoelectric substrate, 2: aluminum metal film,
3: Chromium metal film, 4: Gold metal film, 5: Resist film for forming wiring electrode portion, 6: Resist film for forming interdigital electrode portion.
Claims (1)
回路とを電気的に接続する電線配線部とを形成す
る弾性表面波フイルターの製造方法において、上
記基板上に種類の異なる金属膜を2層以上形成
し、ついでレジストパターンをマスクとして上記
多層金属膜の上記すだれ状電極と電線配線部以外
の不要部分をエツチングにより除去し、さらに上
記基板側から第2層目に形成された金属膜のすだ
れ状電極部の全部をエツチングにより除去する工
程を経て配線電極部のみを高膜厚化した弾性表面
波フイルターの製造方法。1. A method for manufacturing a surface acoustic wave filter in which an interdigital electrode and a wire wiring portion for electrically connecting the electrode and an external circuit are formed on a piezoelectric substrate, in which two layers of different types of metal films are formed on the substrate. After forming the above, using the resist pattern as a mask, unnecessary parts of the multilayer metal film other than the interdigital electrodes and wire wiring portions are removed by etching, and then the interdigital film formed in the second layer from the substrate side is removed. A method of manufacturing a surface acoustic wave filter in which only the wiring electrode part is made thicker by etching the entire shaped electrode part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12260678A JPS5550717A (en) | 1978-10-06 | 1978-10-06 | Manufacture for surface acoustic wave filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12260678A JPS5550717A (en) | 1978-10-06 | 1978-10-06 | Manufacture for surface acoustic wave filter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5550717A JPS5550717A (en) | 1980-04-12 |
JPS6141445B2 true JPS6141445B2 (en) | 1986-09-16 |
Family
ID=14840097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12260678A Granted JPS5550717A (en) | 1978-10-06 | 1978-10-06 | Manufacture for surface acoustic wave filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5550717A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57124912A (en) * | 1981-12-16 | 1982-08-04 | Hitachi Ltd | Manufacture for surface acoustic wave device |
JPS5920722U (en) * | 1982-07-30 | 1984-02-08 | 株式会社東芝 | surface acoustic wave device |
JPS61284991A (en) * | 1985-06-11 | 1986-12-15 | 電気化学工業株式会社 | Circuit formation for aluminum/copper composite lined board |
-
1978
- 1978-10-06 JP JP12260678A patent/JPS5550717A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5550717A (en) | 1980-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7112913B2 (en) | Surface acoustic wave apparatus and manufacturing method therefor | |
US6516503B1 (en) | Method of making surface acoustic wave device | |
US7665196B2 (en) | Method for forming a multi-frequency surface acoustic wave device | |
JP3189719B2 (en) | Manufacturing method of surface acoustic wave device | |
JPS6141445B2 (en) | ||
JP3172124B2 (en) | Surface acoustic wave device and method of manufacturing the same | |
CN114124027A (en) | A kind of SAW filter with T-type IDT structure and its manufacturing method | |
JPH10190389A (en) | Saw filter and its manufacture | |
JPS5942965B2 (en) | How to make a capacitor with an interdigital structure | |
JP3480626B2 (en) | Method for forming electrodes of surface acoustic wave device | |
JPH0998043A (en) | Surface acoustic wave device and manufacturing method thereof | |
JPH0316409A (en) | Surface acoustic wave device and manufacture thereof | |
JPH11312942A (en) | Production of surface acoustic wave device | |
JPH0421205A (en) | Manufacture of surface acoustic wave device | |
JPS5855686B2 (en) | Manufacturing method of surface acoustic wave device | |
JPH03272212A (en) | Manufacture of surface acoustic wave element | |
JPS589414A (en) | Production of reed screen type converter of surface acoustic wave | |
JPS626509A (en) | Manufacture of surface acoustic wave device | |
GB2381976A (en) | Electrode pad construction and connection for surface acoustic wave apparatus | |
JPS6113705A (en) | Production of surface acoustic wave element | |
JPS62154911A (en) | Surface acoustic wave device manufacturing method | |
JP2909930B2 (en) | Manufacturing method of piezoelectric resonance element | |
JPS5847311A (en) | Manufacturing method of surface acoustic wave device | |
JPH04102321A (en) | Manufacturing method of semiconductor device | |
JPS5836841B2 (en) | Microwave Katsupura and its manufacturing method |