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JPS6141217A - Delay circuit - Google Patents

Delay circuit

Info

Publication number
JPS6141217A
JPS6141217A JP16332184A JP16332184A JPS6141217A JP S6141217 A JPS6141217 A JP S6141217A JP 16332184 A JP16332184 A JP 16332184A JP 16332184 A JP16332184 A JP 16332184A JP S6141217 A JPS6141217 A JP S6141217A
Authority
JP
Japan
Prior art keywords
fet
fet1
turned
transistor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16332184A
Other languages
Japanese (ja)
Inventor
Makoto Aso
誠 麻生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP16332184A priority Critical patent/JPS6141217A/en
Publication of JPS6141217A publication Critical patent/JPS6141217A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/26Time-delay networks

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To decrease the number of component parts and to improve the rise or fall performance of a delay circuit by feeding positively a signal produced from the output signal of an FET back to the gate of the FET. CONSTITUTION:The drain potential of an FET1 is set approximately at 0V in an application mode of power supply. Therefore a Tr5 is kept OFF with the FET1 kept ON respectively. A capacitor 2 is charged continuously after application of the power supply. Then the Tr5 is turned ON when the drain potential of the FET1 gives the breakdown to a Zener diode 4. Thus the gate potential of the FET1 is also reduced. As a result, an electric field is applied to the FET1 to increase the internal impedance. Then the drain impedance of the FET1 rises up further. Thus the base current of the Tr5 flowing through the diode 4 is increased more. The Tr5 is turned ON suddenly owing to such a reproducing action. While the FET1 is suddenly turned OFF.

Description

【発明の詳細な説明】 本発明は、スイツチON後所望の時間が経過した後所望
の出力を得るための回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a circuit for obtaining a desired output after a desired time has elapsed after a switch is turned on.

一般に、制御機器等では電源投入後内部回路の初段の動
作が安定した後該初段の回路を後段の回路へ接続するも
の、他機器からの信号が確実なものであることを確認し
た後本機へ入力するもの、同一機器内においても他回路
とのタイミングを画るため動作を遅延させるもの、停電
検出後所望の時間が経過した後非常用電源へ切換えるも
のなどに数秒から数分間の遅延時間を有するタイマーは
数多く用いられている。
In general, in control equipment, etc., after the power is turned on, the operation of the first stage of the internal circuit is stabilized, and then the first stage circuit is connected to the subsequent circuit, and after confirming that the signal from other equipment is reliable, the main unit Delay times ranging from several seconds to several minutes are required for inputs to the circuit, delays in operation to determine the timing with other circuits even within the same device, and switches to emergency power after a desired time has elapsed after a power outage is detected. Many timers are in use.

本発明は上記需要に応えるために為されたものであり、
部品数が少なくて済み、かつ出力の立上りまたは立下り
の良好な遅延回路を提供しようとするものである。
The present invention was made in order to meet the above demand,
The present invention aims to provide a delay circuit that requires a small number of parts and has good output rise or fall.

以下、本発明の構成を図面に従つて詳述する。Hereinafter, the configuration of the present invention will be explained in detail with reference to the drawings.

第1図は、本発明の遅延回路の一実施例である。FIG. 1 shows an embodiment of the delay circuit of the present invention.

周囲において、(1)はNチャネル接合型FETであり
、このFETのソースはコンデンサ(2)を介して接地
されており、このFETのドレインは抵抗(3)を介し
て接地されるとともにツエナーダイオード(4)を介し
てトランジスタ(5)のベースヘ接続されている。この
トランジスタ(5)のコレクタと上記FET(1)のゲ
ートはダイオード(6)を介して接続されている。この
回路では出力をトランジスタ(5)のコレクタからとり
出し、LED(7)を点灯させるようにしてある。
In the surroundings, (1) is an N-channel junction FET, the source of this FET is grounded via a capacitor (2), and the drain of this FET is grounded via a resistor (3) and a Zener diode. (4) to the base of the transistor (5). The collector of this transistor (5) and the gate of the FET (1) are connected via a diode (6). In this circuit, the output is taken out from the collector of the transistor (5) to light up the LED (7).

次に第1図実施例の動作について説明する。Next, the operation of the embodiment shown in FIG. 1 will be explained.

第1図の回路において、電源投入時コンデンサ(2)に
は充電されておらず、FET(1)のソース電位はOV
である。従つて、該FET(1)のドレイン電位もほぼ
OVであるためトランジスタ(5)のベースへ電流は流
れず、このトランジスタ(5)はOFFである。従つて
、上記FET(1)のゲートには供給電圧Vが加わつて
いるため該FET(1)のゲート電位はソース電位より
も高く、該FET(1)はON状態である。電源投入後
抵抗(3)を通してコンデンサ(2)への充電が続き上
記FET(1)のソース電位とドレイン電位は上昇し、
該FET(1)のドレイン電位がツエナーダイオード(
4)を降服させるに至るとトランジスタ(5)のベース
へ電流が流れて該トランジスタ(5)はON状態へ移行
し始め該トランジスタ(5)のコレクタ電位は降下し上
記FET(1)のゲート電位も降下する。従つて、該F
ET(1)に電界が加わり該FET(1)の内部インピ
ーダンスを増加させ、該FET(1)のドレイン電位が
さらに上昇するため上記ツエナーダイオード(4)を通
して流れるトランジスタ(5)のベース電流はさらに増
加する。このような再生作用によつてトランジスタ(5
)は急峻にONになり、FET(1)は急峻にOFFと
なる。
In the circuit shown in Figure 1, when the power is turned on, the capacitor (2) is not charged and the source potential of the FET (1) is OV.
It is. Therefore, since the drain potential of the FET (1) is also approximately OV, no current flows to the base of the transistor (5), and this transistor (5) is turned off. Therefore, since the supply voltage V is applied to the gate of the FET (1), the gate potential of the FET (1) is higher than the source potential, and the FET (1) is in the ON state. After the power is turned on, the capacitor (2) continues to be charged through the resistor (3), and the source and drain potentials of the FET (1) rise.
The drain potential of the FET (1) is a Zener diode (
4), a current flows to the base of the transistor (5), and the transistor (5) begins to shift to the ON state, and the collector potential of the transistor (5) drops, and the gate potential of the FET (1) decreases. also descends. Therefore, the F
An electric field is applied to the ET (1), increasing the internal impedance of the FET (1), and the drain potential of the FET (1) further increases, so that the base current of the transistor (5) flowing through the Zener diode (4) further increases. To increase. Due to this regeneration effect, the transistor (5
) suddenly turns ON, and FET (1) suddenly turns OFF.

第2図は負荷電流を多く得るため、トランジスタ(5)
のコレクタ電流をトランジスタ(8)のベース電流とし
該トランジスタ(8)のコレクタから出力を得るように
したものである。
In Figure 2, transistor (5) is used to obtain a large load current.
The collector current of the transistor (8) is used as the base current of the transistor (8), and an output is obtained from the collector of the transistor (8).

上記第1図および第2図実施例においては、コンデンサ
(2)の容量を大きくせずに遅延時間を長くするために
は抵抗(3)の値を大きくしなければならないため、遅
延後トランジスタ(5)のベースへ電流を充分流すこと
はできない。第3図はこの問題を解決するためFET(
1)のドレイン電位の変化を高入力インピーダンス素子
(9)を介して電流変化とし遅延後トランジスタ(5)
のベースへ電流を充分流すことができるようにした実施
例である。第3図実施例においては高入力インピーダン
ス素子(9)にFET(1)とは極性の異なるFETを
用いており、上記FET(1)のドレイン電位が上昇す
ると上記高入力インピーダンス素子すなわちFET(9
)の電界が増加するため該FET(9)の内部インピー
ダンスが増加して該FET(9)のソース電位は上昇し
ツエナーダイオード(4)を降服させる。上記FET(
9)のソースに接続された抵抗(10)の値は抵抗(3
)に比べはるかに小さいためトランジスタ(5)のベー
スへ電流を充分供給することができる。
In the embodiments of FIGS. 1 and 2 above, in order to lengthen the delay time without increasing the capacitance of the capacitor (2), it is necessary to increase the value of the resistor (3). 5) It is not possible to flow a sufficient amount of current to the base. Figure 3 shows FET (
The change in the drain potential of 1) is converted into a current change via the high input impedance element (9), and after a delay, the transistor (5)
This is an embodiment in which a sufficient amount of current can flow to the base of the circuit. In the embodiment shown in FIG. 3, a FET having a polarity different from that of the FET (1) is used as the high input impedance element (9), and when the drain potential of the FET (1) increases, the high input impedance element, that is, the FET (9) is used.
) increases, the internal impedance of the FET (9) increases and the source potential of the FET (9) increases, causing the Zener diode (4) to surrender. The above FET (
The value of the resistor (10) connected to the source of the resistor (3) is
), it is possible to supply a sufficient current to the base of the transistor (5).

以上のように、本発明の遅延回路は部品数が少なくて済
み、しかも出力の立上りまたは立下りは良好である。
As described above, the delay circuit of the present invention requires only a small number of components and has good output rise or fall.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第3図は、本発明の遅延回路の実施例を示すも
のである。
1 to 3 show embodiments of the delay circuit of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 1)FETのチャネルの一端を抵抗を介して接地し、か
つ該FETのチャネルの他端をコンデンサを介して接地
したものであり、電源供給後該FETの上記チャネルの
一端の電位が所定の電位に達したとき、該FETの上記
チャネルの一端からの帰還電流がトランジスタを動作せ
しめ該トランジスタのコレクタが上記FETのゲートと
電界的に結合したものであって、上記FETのOFFま
たは上記トランジスタのONに同期して電位の変化する
ところから出力信号を得ることを特徴とする遅延回路。
1) One end of the channel of the FET is grounded via a resistor, and the other end of the channel of the FET is grounded via a capacitor, and after power is supplied, the potential at one end of the channel of the FET is a predetermined potential. When the feedback current from one end of the channel of the FET operates the transistor, the collector of the transistor is electrically coupled to the gate of the FET, and the FET is turned off or the transistor is turned on. A delay circuit characterized in that an output signal is obtained from a point where the potential changes in synchronization with.
JP16332184A 1984-08-01 1984-08-01 Delay circuit Pending JPS6141217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16332184A JPS6141217A (en) 1984-08-01 1984-08-01 Delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16332184A JPS6141217A (en) 1984-08-01 1984-08-01 Delay circuit

Publications (1)

Publication Number Publication Date
JPS6141217A true JPS6141217A (en) 1986-02-27

Family

ID=15771617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16332184A Pending JPS6141217A (en) 1984-08-01 1984-08-01 Delay circuit

Country Status (1)

Country Link
JP (1) JPS6141217A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240955A (en) * 1975-09-26 1977-03-30 Matsushita Electric Ind Co Ltd Timer circuit
JPS56128023A (en) * 1980-03-11 1981-10-07 Kyoshin Denki Seisakusho:Kk Electronic switchgear

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240955A (en) * 1975-09-26 1977-03-30 Matsushita Electric Ind Co Ltd Timer circuit
JPS56128023A (en) * 1980-03-11 1981-10-07 Kyoshin Denki Seisakusho:Kk Electronic switchgear

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