JPS6135576A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JPS6135576A JPS6135576A JP15671084A JP15671084A JPS6135576A JP S6135576 A JPS6135576 A JP S6135576A JP 15671084 A JP15671084 A JP 15671084A JP 15671084 A JP15671084 A JP 15671084A JP S6135576 A JPS6135576 A JP S6135576A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- semiconductor light
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000002184 metal Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はLED (半導体発光素子)を用いた半導体発
光装置に関するもので、特に半導体赤外発光装置及び半
導体可視発光装置に使用されるものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a semiconductor light emitting device using an LED (semiconductor light emitting device), and is particularly used in a semiconductor infrared light emitting device and a semiconductor visible light emitting device. .
従来のメタルケース封止半導体発光装置においては、第
3図または第4図の如く反射板2のついたステム1また
は反射板のないステム3にLEDペレット4をマクント
、デンディングし、これをレンズ5付きメタルケース6
またはレンズ効果のない単なるガラス製光透過板7をそ
なえたメタルケース6で封止したものであった。In a conventional semiconductor light emitting device sealed in a metal case, as shown in FIG. 3 or 4, an LED pellet 4 is placed on a stem 1 with a reflector 2 or a stem 3 without a reflector, and then attached to a lens. Metal case 6 with 5
Alternatively, it was sealed with a metal case 6 provided with a simple glass light transmitting plate 7 without a lens effect.
図中8はポンディングワイヤ、9はリードである。In the figure, 8 is a bonding wire, and 9 is a lead.
ところで、上記のような従来の発光装置でLED 4を
発光させた場合、光はレンズ5またはガラス製光透過板
7を通して外部に出てくるわげであるが、LED4が発
光した光の一部は外部に取り出せずに、メタルケース6
内で反射減衰する。特にレンズ5またはガラス製光透過
板7による反射減衰よりも、メタルケース6による光損
失が大きかった。By the way, when the LED 4 is made to emit light using the conventional light emitting device as described above, the light comes out through the lens 5 or the glass light transmitting plate 7, but part of the light emitted by the LED 4 The metal case 6 cannot be taken out.
Reflection is attenuated within. In particular, the optical loss due to the metal case 6 was greater than the reflection attenuation due to the lens 5 or the glass light transmitting plate 7.
本発明は上記実情に鑑みてなされた−もので、ケース内
でのLED光の反射減衰損失を防いで、外部に効率よ<
LED光を取り出すことができる半導体発光装置を提
供しようとするものである。The present invention was made in view of the above-mentioned circumstances, and it prevents the reflection attenuation loss of LED light inside the case and efficiently transmits it to the outside.
The present invention aims to provide a semiconductor light emitting device that can extract LED light.
本発明は、レンズまたは光透過板のLED光入射面の一
部を柱状にし、空気とレンズまたは光透過板の素粉の屈
折率の差を利用して、上記柱状部に光ファイバの効果を
もたせる。即ち上記柱状部の底面から入射した光は、上
記柱状部を導光路として発光装置の外部に放射される。The present invention makes a part of the LED light incident surface of the lens or light transmitting plate columnar, and utilizes the difference in refractive index between air and the raw powder of the lens or light transmitting plate to impart the effect of an optical fiber to the columnar part. Let it stand. That is, the light incident from the bottom surface of the columnar section is radiated to the outside of the light emitting device using the columnar section as a light guide path.
またLED光を全て上記柱状部の底面に入射させるため
に、ステムに凹んだ反射面を設け、これでIJD光を柱
状部の底面に集めるようにすると更に効果が上がるよう
にしたものである。Further, in order to make all of the LED light incident on the bottom surface of the columnar section, the stem is provided with a concave reflecting surface, which concentrates the IJD light on the bottom surface of the columnar section, thereby further improving the effect.
〔発明の実施例〕
以下図面を参照して本発明の一実施例を説明する。第1
図は同実施例を示す断面的構成図であるが、これは第3
図のものと対応させた場合の例であるから、対応個所に
は同一符号を付して説明を省略し、特徴とする点の説明
を行なう◎本実節例の特徴は、レンズ(またはガラス製
光透過板)5のLi2と対向する部分に、該LEDから
の光を導入かつガイドするための柱状部51を設けた点
である。この柱状部51は、ここでは円柱形状である。[Embodiment of the Invention] An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a cross-sectional configuration diagram showing the same embodiment, but this is the third
Since this is an example that corresponds to the one shown in the figure, the corresponding parts are given the same reference numerals, the explanation is omitted, and the characteristic points are explained. ◎The characteristic of this example is that the lens (or glass The point is that a columnar part 51 for introducing and guiding light from the LED is provided in a portion of the light transmitting plate 5 facing Li2. This columnar portion 51 has a cylindrical shape here.
また反射面2を充分凹ませ、LED光が全て円柱部51
の底面に入射するようになっている。In addition, the reflective surface 2 is sufficiently recessed so that all of the LED light is transmitted to the cylindrical portion 51.
It is designed to be incident on the bottom surface of the
第2図は円柱部51での光入射状態を示したもので、1
1はLED光、θmaxはLED光の最大入射角、θ。FIG. 2 shows the state of light incidence at the cylindrical part 51.
1 is the LED light, θmax is the maximum incident angle of the LED light, θ.
は臨界角、θ。は屈折角(θ。−θC)、nlは空気の
屈折率、nlはガラスの屈折率である。is the critical angle, θ. is the refraction angle (θ.−θC), nl is the refractive index of air, and nl is the refractive index of glass.
しかして本装置においては、第2図の如くLED光の円
柱部底面への最大入射角θmaxは、よって入射角はa
mLXよシ小さくなるように設計する。また第1図の如
(LED 4の1点または12点から出た光が、反射面
2のb点またはb点に接して通過した場合、この光は円
柱部51の8点または07点よシ内側に入射するように
設計する。この時
90°−θl≧θmax ・・・(2
)を満たさなければならない。またLED 4の1点ま
たは12点から出た光が、反射面のb点またはb′点に
当って反射した場合、この反射光は円柱部5Lの8点ま
だはc’/点g内側に入射するように設計する。この時
90°−02≧θmax ・・・(3
)の関係である。However, in this device, as shown in Fig. 2, the maximum incident angle θmax of the LED light to the bottom surface of the cylindrical part is, therefore, the incident angle is a
Design to be smaller than mLX. Also, as shown in FIG. It is designed so that it enters the inside of the cylinder.At this time, 90°-θl≧θmax...(2
) must be satisfied. Also, when the light emitted from one or 12 points of LED 4 hits point b or b' of the reflecting surface and is reflected, this reflected light will be reflected at the 8 points c'/g inside the cylindrical part 5L. Designed to be incident. At this time, 90°-02≧θmax...(3
).
上記のようにメタルケース6に付いているレンズ(また
はガラス製光透過板)5のLED光入射面の一部を円柱
状にし、空気とガラスの屈折率の差を利用して、上記円
柱部5□に光ファイバの効果をもたせる。即ち上記レン
ズ(またはガラス製光透過板)50円柱部5□の底面か
ら入射した光は、゛円柱部51を導光路として発光装置
の外部に放射される。またLED光を全1円柱部5Xの
底面に入射させろために、ステム1に充分凹んだ反射面
2を設げ、これでLED光を円柱部5□の底面に集める
ようにすると更(効果が上がる。すると従来の構造の半
導体発光装置に比べ、本発明のものでは光出力が20〜
30チ向上した。As mentioned above, a part of the LED light incident surface of the lens (or glass light transmitting plate) 5 attached to the metal case 6 is made into a cylindrical shape, and the cylindrical part is made using the difference in refractive index between air and glass. Give the effect of optical fiber to 5□. That is, the light incident from the bottom surface of the cylindrical portion 5□ of the lens (or glass light transmitting plate) 50 is radiated to the outside of the light emitting device using the cylindrical portion 51 as a light guide path. In addition, in order to make the entire LED light enter the bottom surface of the cylindrical portion 5 Compared to a semiconductor light emitting device with a conventional structure, the light output of the device of the present invention is 20 to 20% higher than that of a conventional semiconductor light emitting device.
Improved by 30 inches.
以上説明した如く本発明によれば、LED光の反射減衰
損失が防止できるから、効率よ(LED光を外部に取り
出すことができるものである。As explained above, according to the present invention, since the reflection attenuation loss of LED light can be prevented, the LED light can be efficiently extracted to the outside.
第1図は本発明の一実施例を示す断面的構成図、第2図
は同構成の円柱部の光入射状態を示す図、第3図、第4
図は従来の半導体発光装置の断面的構成図である。
1・・・ステム、2・・・反射面、4・・・LED (
半導体発光素子)、5・・・レンズ、5□・・・円柱部
(柱状部)、6・・・メタルケース。
出願人代理人 弁理士 鈴 江 武 4−第1図FIG. 1 is a cross-sectional configuration diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing the light incident state of a cylindrical part of the same configuration,
The figure is a cross-sectional configuration diagram of a conventional semiconductor light emitting device. 1... Stem, 2... Reflective surface, 4... LED (
Semiconductor light emitting device), 5...Lens, 5□...Cylindrical part (column-shaped part), 6...Metal case. Applicant's agent Patent attorney Takeshi Suzue 4-Figure 1
Claims (4)
該発光素子からの光を導入かつガイドするための柱状部
を有したレンズまたは光透過板とをそなえた発光装置本
体を具備したことを特徴とする半導体発光装置。(1) A light emitting device body including a semiconductor light emitting element and a lens or a light transmitting plate having a columnar part for introducing and guiding light from the light emitting element in a portion facing the light emitting element. A semiconductor light emitting device characterized by:
られ、前記反射面により前記発光素子からの光は前記柱
状部の底面に導入されることを特徴とする特許請求の範
囲第1項に記載の半導体発光装置。(2) The semiconductor light emitting element is provided on a stem with a reflective surface, and the light from the light emitting element is introduced into the bottom surface of the columnar part by the reflective surface. The semiconductor light emitting device described above.
装置を構成する特許請求の範囲第1項または第2項に記
載の半導体発光装置。(3) The semiconductor light emitting device according to claim 1 or 2, wherein the light emitting device main body constitutes a semiconductor light emitting device sealed in a metal case.
許請求の範囲第1項に記載の半導体発光装置。(4) The semiconductor light emitting device according to claim 1, wherein the columnar portion has a cylindrical shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15671084A JPS6135576A (en) | 1984-07-27 | 1984-07-27 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15671084A JPS6135576A (en) | 1984-07-27 | 1984-07-27 | Semiconductor light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6135576A true JPS6135576A (en) | 1986-02-20 |
Family
ID=15633640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15671084A Pending JPS6135576A (en) | 1984-07-27 | 1984-07-27 | Semiconductor light-emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6135576A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097937B2 (en) | 2001-04-10 | 2012-01-17 | Osram Ag | Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component |
-
1984
- 1984-07-27 JP JP15671084A patent/JPS6135576A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097937B2 (en) | 2001-04-10 | 2012-01-17 | Osram Ag | Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component |
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