JPS61282847A - Photoconductor - Google Patents

Abstract

PURPOSE:To improve the electrostatic charging characteristics by forming a blocking layer of amorphous Si, a carrier transferring layer of amorphous Si and a carrier generating layer contg. microcrystallie Si as the principal component on an electrically conductive support. CONSTITUTION:A blocking layer 24a, a carrier transferring layer 24b, a carrier generating layer 24c and a surface layer 24e are successively formed on an electrically conductive drum-shaped substrate 12. The blocking layer 24a is made of amorphous Si contg. a group III or V element in the periodic table and/or one or more kinds of atoms selected among C, O and N. The carrier generating layer 24c is composed of microcrystalline Si and a group III or V element in the periodic table. The carrier transferring layer 24b is made of amorphous Si contg. one or more kinds of atoms selected among C, O and N and a group III or V element in the periodic table. Thus, a photoconductive having superior heat and moisture resistances, high mechanical strength and satisfactory electrostatic charging performance and harmless to the human body can be produced.

Description

[Detailed description of the invention]

[Technical Field of the Invention] The present invention relates to a photoconductor that forms an electrostatic latent image in an image forming apparatus such as an electrophotographic apparatus. [Technical background of the invention and its problems] In recent years, image forming apparatuses such as electrophotographic apparatuses. With the diversification of functions and models, inorganic materials such as cadmium sulfide (CdS), zinc oxide (ZnO), selenium (Ss), selenium tellurium alloy (SE-IS), and poly-N- Vinyl carbazole (hereinafter referred to as PVCz)
), trinitrofluorene (hereinafter referred to as TNF)
A variety of organic materials have been developed. However, among the photoconductive materials, selenium (Se),
Cadmium sulfide (CdS) is a material that is inherently harmful to the human body, so the manufacturing equipment becomes complicated for safety reasons, increasing manufacturing costs, and it is necessary to collect it after use. There is selenium (Ss), which further increases the cost. Selenium-tellurium alloy (Ss-Tel) has a low crystallization temperature of about 65 ('C), so it easily crystallizes and causes residual charges in the crystallized part, which can stain images. Zinc oxide (ZnO) has the drawback of easily causing problems and ultimately failing to achieve a long service life.Due to its physical properties, zinc oxide (ZnO) is prone to oxidation-reduction and is significantly affected by environmental conditions such as temperature and humidity. However, it has the drawbacks of unstable image quality and poor reliability.Also, it is an organic material (PVCz).
(TNF) has a drawback in that it is difficult to extend its life due to its poor thermal stability and abrasion resistance, and has recently been suspected of being carcinogenic. Therefore, in recent years, in order to solve the above-mentioned drawbacks, it is non-polluting and does not require collection treatment, has a high surface hardness and has excellent abrasion resistance and impact resistance, and is also higher in the visible light range than before. Amorphous silicon with spectral sensitivity (hereinafter a-
3i) is being studied for application to photoconductive materials such as photoreceptors. Specifically, since the photoreceptor is required to have high resistance and high photosensitivity as its characteristics, in order to satisfy both of these characteristics, the conductive support and (a-5i) photoconductive layer are A layered type (a-3i) in which a blocking layer is provided in between and a surface charge retention layer is layered on the (a-3i) photoconductive layer.
3i) A photoreceptor has been developed. However, (a-8i) was formed by glow discharge decomposition using a gas containing silane (Sil).
5i) There is a problem in that the electrical properties and optical properties vary greatly depending on the amount of hydrogen atoms (H) incorporated into the film. That is, as the amount of hydrogen atoms (H) incorporated into the (a-5L) film increases, the optical bandgap becomes larger and the resistance becomes higher. The spectral sensitivity decreases, making it impossible to use it in laser beam printers using semiconductor lasers, and depending on the film formation conditions, ((S
Bond structures such as iHRin) bonds and (Sil(2) bonds) become dominant in the (a-3i) film, and as a result, (SiH) bonds are broken, creating dangling bonds, voids, etc. (a-5i) As the amount of hydrogen atoms incorporated into the film decreases, the spectral sensitivity to long-wavelength light increases; , the optical bandgap becomes smaller and the resistance becomes lower, and hydrogen atoms (H) no longer compensate for dangling bonds, which reduces the mobility and lifetime of the generated carriers, resulting in poor photoconductivity. However, it has the problem that it cannot be used for photoreceptors.Therefore, as a method to increase the spectral sensitivity to long wavelength light, a gas containing silane (Si) and germane gas (GeH4) are mixed. , a method of forming a film with a narrow optical band gap by glow discharge decomposition has been carried out, but the optimum support temperature during glow discharge is generally different between silane [Si)-containing gas and germane [GeH,) gas]. So 4
Since the difference is between 0 and 50 degrees, structural defects are likely to occur in the formed film, the photoconductivity is also deteriorated, and furthermore, when germane gas (GeH4) is oxidized, it becomes toxic. The disadvantage is that the waste gas treatment is also complicated. [Object of the Invention] This invention was made based on the above circumstances, and although it has excellent charging characteristics due to its high resistance, it has high spectral sensitivity characteristics in the visible light and near infrared regions, and furthermore, It is an object of the present invention to provide a photoconductor that has excellent mechanical strength such as abrasion resistance and thermal stability, is easy to manufacture, and can reduce costs. [Summary of the Invention] In order to achieve the above object, the present invention includes a blocking layer formed of amorphous silicon (hereinafter referred to as a-5L) among a blocking layer, a carrier transport layer, and a carrier generation layer provided on a conductive support. ), and the carrier generation layer is mainly made of microcrystalline silicon (μ
It is called c-3L. ), and by forming the carrier transport layer with (a-5i), a photoconductor having excellent charging characteristics and high spectral sensitivity characteristics even in the near-infrared light region can be obtained. [Embodiments of the Invention] In explaining the present invention in detail, the characteristics of (μC-5i) will be described. This (μc-Si) belongs to non-single-crystal silicon, but when X-ray diffraction measurements are performed, a halo appears because (a-5i) is amorphous, as shown by the dotted line in Figure 5. On the other hand, (μc-3i) shows a crystal diffraction pattern in the vicinity of [2θ] of 27 to 28.5 C degrees, as shown by the solid line in Figure '5. . On the other hand, polycrystalline silicon has a dark resistance of 106 [Ω·l] or less, whereas (μc-Si) has a high resistance of 10″1 [Ω·13 or more. (μc-3i) is distinguished from other non-single-crystal silicon (a-5i) and polycrystalline silicon, and its structure is about several dozen [people]
It is considered that the microcrystals having the above particle size are aggregated and formed. In order to manufacture such (μc-3i), sputtering and glow discharge decomposition methods are used as in (a-8i), but compared to (a-5i), the conductive support on which the film is formed is used. If the temperature is set higher or the high frequency power is increased, it becomes easier to form. That is, by raising the temperature of the support and increasing the high-frequency power, the flow rate of the silane (Si)-containing gas that is the raw material can be increased, and as a result, the film formation rate is increased and (μc-5i) is more likely to be formed. It is from. Furthermore, silane (SiH*
)Disilane [si, )I, ] and other higher-order silane gases are used when diluted with hydrogen (H).
e-3i) becomes easier to be formed more effectively. In addition, in the (μc-3i) layer to be formed, hydrogen (H
) content increases, the degree of crystallinity increases, approaching polycrystalline silicon, and while the dark resistance decreases, the bright resistance increases, and eventually it no longer exhibits photoconductivity, so the dark resistance and bright In order to obtain excellent photoconductive properties with well-balanced resistance, it is desirable that the (pc-Si) layer contains 0.1 to 30 (atomic %) hydrogen (H). Hydrogen (H) doping into the μc-Si layer is performed using silane (SiH4) or disilane [
A silane (Si)-containing gas such as Si, H, ] and hydrogen gas [H2] as a carrier gas are introduced into a reaction vessel to perform glow discharge, or silicon tetrafluoride (SiF) is introduced into a reaction vessel.
, ) or trichlorosilane (SiCQ4) and hydrogen gas [H2] as a raw material, or even a mixed gas of a silane (Si)-containing gas and a silicon halide as a raw material. You may do so. Furthermore, in the (μc-5i) layer, hydrogen atoms ( H
) In addition to doping, impurities may be doped, but in order to make the p-type, suitable impurity elements include elements from group □ of the periodic table, such as boron [B] and aluminum (AM), and other □ In order to make the material n-type, elements of group Ⅰ of the periodic table, such as nitrogen (N) and phosphorus (P), are suitable. Also, (μc-5
In order to increase the dark resistance of L) and enhance the photoconductive properties, nitrogen [N], carbon (C), and oxygen (at least one of 01
It is desirable to dope the seeds. In this way, these elements precipitate at the grain boundaries of (μC-5i), and also act as terminators of dangling bonds of silicon (Si), and the density of states existing in the forbidden band between bands. This is because it reduces Next, an embodiment of the present invention using (μc-3i) having the above-mentioned characteristics will be described with reference to FIGS. 1 to 4. A heater (13) is built in the reaction vessel (11) of the glow discharge device (10) to support a drum-shaped substrate (12) which is a conductive support and is made of aluminum, and a monitor (14) is installed inside the reaction vessel (11). support (16) rotated by
is provided. Further, the surrounding area of the support body (16) is 13.
It is surrounded by a cylindrical electrode (18) connected to a high frequency power source (17) of 56 (MHz), and above the support rod (16) there are silane gas (SiH2), diborane gas [B21
(,), hydrogen gas [H2], methane gas (CH4), etc. can be supplied as needed with a large number of gas cylinders (19a
)...(19n). and a gas supply system (20) having a gas mixer (20a)
A gas introduction pipe (21) is provided which is connected to the gas introduction valve (21a) through a gas introduction valve (21a). Furthermore, (8a)...(8
n) are valves for each gas cylinder (19a) to (19n), and (9a) to (9n) are pressure regulators. Furthermore (2
2) is an exhaust valve connected to an exhaust device (not shown) for evacuating the inside of the reaction vessel (11), and (23) is a vacuum gauge for measuring the atmospheric pressure inside the reaction vessel (11). or(
24) and (25) are the first and second photoreceptors of an electrophotographic device which are photoconductors, and in FIG.
), a first photoconductive layer (24d) consisting of a first carrier transport layer (24b) and a first carrier generation layer (24c).
, the first surface layer (24 g) was laminated. It is. Note that the order of the first photoconductive layer (24d) may be changed, and in this case, as shown in FIG.
12) A second photoconductive layer (25d) consisting of, in sequence, a second blocking layer (25a), a second blocking layer (25b) and a second carrier transport layer (25c) on top. Then, a second surface layer (25e) is laminated. However, each of the blocking layers (24a) and (25a) is configured such that during corona discharge of each photoreceptor (24) and (25), charges of opposite polarity to the charged charges are transported from the drum-shaped substrate (12) to each carrier. While preventing carriers from being injected into the layers (24b) and (25c), among the carrier pairs generated in the carrier generation layers (24c) and (25b) during exposure of each photoreceptor (24) and (25), This allows carriers having the same polarity as the electrical charge to smoothly flow into the drum-shaped substrate (12). As blocking layers (24a) and (25a) having such a function, high resistance and insulating types can be considered;
), (25) When positively charging the surface, (
a-3i) and (μc-3L) are doped with elements from group Ⅰ of the periodic table to make them p-type.
While blocking the injection of electrons from the drum-shaped substrate (12), when negatively charging the surfaces of the photoreceptors (24) and (25), (a-Si) and (μc-3i) are shown in the periodic table. By doping 1 x 10-3 to 2 [at%] of group ■ elements to make it n-type and prevent the injection of holes from the drum-shaped substrate (12), the performance will be higher and better. It is possible to obtain photosensitive characteristics. These (a-5i) and (μc-5i)
) can be doped with at least one of carbon [C], oxygen [O], and nitrogen (N) at 0.1 to 20 [atomic %] to increase its dark resistance and improve its characteristics. I can do it. And the film thickness is 100 [
human] to 10 [μ■], more preferably 0.1 [μ■]
m〕～2〔μ illusion is good. Next, the carrier transport layer (24b)
, (25c) is a carrier generation layer (24c). (a-3L) or (μc-3L) as long as the carrier generated in (25b) can efficiently reach the drum-shaped substrate (12) and furthermore can have high charging ability and potential holding ability in the dark. ) may be composed of any of the elements from Group I of the Periodic Table or Group V of the Periodic Table. (atomic%) sea lion
By adding carbon to (a-5i) or (pc-5i), the dark resistance can be increased and the charging ability can be improved.
], nitrogen (Nl, oxygen

Charging ability can be improved by doping at least one of [0] by 0.1 to 20 [atomic %]. Both carrier transport and potential holding functions are improved. Note that the carrier transport layers (24b) and (2,5c) are (a
-5i), structural defects such as dangling bonds and voids can be corrected by doping hydrogen. Furthermore, a carrier transport layer (24b),
(25c) does not function satisfactorily if the film thickness is too thin or too thick, and is preferably 3 [μm] to 80 [μm].
], the sixth-order carrier generation layer (24c), (2
5b) absorbs light of any wavelength and generates photogenerated carriers, and is partially or mostly composed of (μc-5i) so as to have spectral sensitivity to long wavelength light, and has a periodic law. lXl0-' to 1 x lθ''''3 [atomic %]
By dodging, a p-type can be obtained in the former case, and an n-type can be obtained in the latter. The thickness of this film may be as thin as 0.1Cμm to IO (μm).Finally, the surface layer (24e) = (25e) protects the surface, prevents light reflection, and improves light transmittance. It is a substance that improves energy efficiency and retains electric charge.
,oxygen

[0] containing 10 to 50 [atomic%] gold (a-3i) or aluminum oxide (Anzo3)
It is made of inorganic compounds such as, and organic materials such as polyliquefied vinyl, and its film thickness is preferably 100 [μm] to 20 [μm], more preferably 0.1 [μm] to 2 [μm]. Ru. Therefore, the photoreceptor (24) in the glow discharge device (10),
(25), after setting the drum-shaped substrate (12) on the support rod (16), open the exhaust valve (22) to bring the inside of the reaction vessel (11) to a predetermined pressure. (not shown) performs exhaust gas treatment, and a heater (not shown) is used to treat exhaust gas.
13), the drum-shaped substrate (12) is heated to a predetermined temperature. Then, the gas supply system (20) is connected via the gas introduction pipe (21).
A more required predetermined gas is introduced into the reaction container (11), and while the gas pressure in the reaction container (11) is maintained constant, the drum-shaped substrate (12) and the cylindrical electrode ( 18) Apply the required power for a predetermined period of time. Blocking layers (24a) and (25a) are formed. Subsequently, in the same reaction vessel (11), the film forming conditions such as the temperature of the drum-shaped substrate (12), the introduced gas, the amount of electric power, and the time of applying electric power are reset to predetermined values, and the blocking layer (24a ), (25a) with its photoreceptor (24) on top. A carrier transport layer (24b) according to the structure of (25),
(25c) and carrier generation layer (24c), (2
5b) are deposited in any order to form photoconductive layers (24d), (
25d) film formation is performed. Furthermore, in the same reaction vessel (11), each film forming condition was reset to the specified one, and the photoconductive layer (2
Surface layer (24e) on (25d) (4d), (25d)
25e) is formed to complete the formation of the photoreceptors (24) and (25). Next, several specific examples of the effects of this embodiment will be described. [Specific Example 1] First, the drum-shaped base (12) is set on the support rod (16), the exhaust valve (22) is opened, and the exhaust device (not shown) is turned on.
The inside of the reaction vessel (11) is evacuated to 0.1 (Torr) or less, and the drum-shaped substrate (
12) to 350 ("C). Next, from the gas supply system (20). Through the gas introduction pipe (21), nitrogen gas [N2] is added at 5 to 500 [%] based on the silane gas (SiH4) flow rate. A gas mixture of 0.01 to 5% diborane gas (BxHs) is introduced into the reaction vessel (11), and the pressure inside the reaction vessel (11) is increased to 0.3 (Torr) using an exhaust device (not shown).
) while maintaining the drum-shaped base (
12) while rotating the high frequency power supply (17).
After applying a power of 0 (11) for 45 minutes between the drum-shaped substrate (12) and the cylindrical electrode (18) to form a first blocking layer (24a) consisting of (a-5i), The supply of electricity and various gases will be cut off. Next, the reaction vessel (
11) from the gas supply system (20).
4) Diborane gas (at H,) relative to the flow rate is 0.0
1 to 3 [%] and nitrogen gas [N2] of 1 to 300 [%] was introduced, and the pressure inside the reaction vessel (11) was brought to 0.4 (Torr) using an exhaust device (not shown). While rotating the drum-shaped base (12) while maintaining
2) and the cylindrical electrode (18) for 3 hours, (a-
The first carrier transport layer (24b) made of
A film is formed on the blocking layer (24a), and the supply of electric power and various gases is stopped. Next, hydrogen gas [N2] and helium gas (He) are added to the reaction vessel (11) from the gas supply system (20) at a rate of 10 to 1000 (%), diborane gas (at H6
) at a ratio of 2% or less is introduced, and the pressure inside the reaction vessel (11) is reduced to 0 using an exhaust device (not shown).
．． While rotating the drum-shaped base (1?) while maintaining the pressure at 300 (Torr) using a high frequency power source (17),
The power of Vl is applied to the drum-shaped base (12) and the cylindrical electrode (1
8) for 5 hours to form the first carrier transport layer (24b
) A first carrier generation layer (24c) made of a mixture of (a-5L) and (μc-5i) is formed on top of the carrier, and the supply of electric power and various gases is stopped. And finally, the reaction vessel (11
) from the gas supply system (20).
Methane gas [CH4] and nitrogen gas [N2]
] A mixture of the same amount to several tens of times the amount of gas is introduced, and while the drum-shaped substrate (12) is rotated while maintaining the pressure inside the reaction vessel (11) at 0.3 (Torr), a high-frequency power source is applied. (17), the power of 100(1+I) is approximately 15
(a) on the first carrier generation layer (24c).
A first surface layer (24e) consisting of -3i) is formed, and the supply of electric power and gas is stopped to complete the production of the first photoreceptor (24). The film thickness of the first photoreceptor (24) thus obtained is approximately 25 [μm], and the first carrier generation layer (24) is approximately 25 [μm] thick.
When the crystallinity and crystal grain size of (μc-5i) in 4c) were measured by X-ray diffraction method, the crystallinity was 20%.
], and the crystal grain size was 75 [persons]. Moreover, 5(
When a voltage (kV) was applied, the charging capacity was 300 (V), and the first photoreceptor (24) was connected to the main body of the electrophotographic apparatus (
(not shown) and made a copy, it showed that the heat resistance,
It has excellent moisture resistance, abrasion resistance, etc., and even after repeated copying of more than 250,000 sheets, it remained almost unchanged from the initial image, resulting in clear and high-quality images. Furthermore, this first photoreceptor (24
) and the spectral sensitivity of a conventional photoreceptor (not shown) in which the carrier generation layer consists of only (a-5i) were measured, and as shown in FIG. In comparison, as shown by the solid line, this first photoreceptor (24) has a wavelength of 650 [13 or more (visible light region and near infrared region)]
It has higher sensitivity and can be applied to laser beam printers and the like. (Specific Example 2) This (Specific Example 2) consists of the first carrier transport layer (24b) and the first carrier generation layer (24c) of the above-mentioned (Specific Example 1).
The order of film formation is reversed, and the first carrier transport layer (24
During film formation in b), phosphine gas (PHi) was added to silane gas (SiHJ) instead of diborane gas (a2its).
It uses a mixed reaction gas of o, oos to 2 [%] with respect to the flow rate, and the rest is exactly the same as (Specific Example 1)6. In other words, in this specific example, a drum-shaped substrate (12) A second blocking layer (25a) similar to (Example 1)
), this second blocking layer (25a)
A second carrier generation layer (25
b), followed by forming a second carrier transport layer (25c) under the above conditions, and then forming a second carrier transport layer (25c) in the same manner as in (Specific Example 1).
A surface layer (25e) is formed thereon. The second photoreceptor (25) thus formed had the same charging characteristics, spectral sensitivity characteristics, number of continuous copies, etc. as the first photoreceptor (24). (Specific Example 3) This (Specific Example 3) reverses the film formation order of the first carrier transport layer (24b) and the first carrier generation layer (24c) of (Specific Example 1), and further When forming the transport layer (24b), methane gas (CH4) was added to 50% of the flow rate of silane gas (SiH4), and phosphine gas [Ptr,
) was mixed with a reaction gas of 0.03 (%), the reaction pressure was set to 0.3 (Torr), high frequency power zso(w) was applied for 2 hours, and a carrier transport layer (not shown) of about 5 [μm] was formed. ) while forming the first carrier generation layer (24c).
and the first block layer (24a), silane gas (S
iH4) methane gas (CH4) to 100 [
%], diborane gas (B, H@] 0.05[%] mixed reaction gas, one reaction pressure was set to 0.4 (Torr), and high frequency power of 200 (+111) was applied for 1 hour to form a film. A holding layer (not shown) is provided.In other words, in this specific example (not shown), a blocking layer, a charge holding layer, a carrier generation layer, and a surface layer of a carrier transporting layer are layered in this order on a drum-shaped substrate. Even with the photoreceptor (not shown) formed in this way, almost the same characteristics as the first photoreceptor (24) and the second photoreceptor (25) can be obtained. We were able to obtain a good image. With this configuration, each carrier generation layer (24c)
, (25b) is (p c-Si) and (a-5i)
(7) Since it is made of a mixture, it has higher sensitivity in the visible light region and near-extra region than those made only of (a-8i), and can improve image quality and is useful for laser printers etc. It also becomes possible to apply this to Furthermore, since the material of each of the photoreceptors (24) and (25) is harmless to the human body, there is no need to collect the photoreceptors during production, which results in cost reduction. Also, as in this example, each surface layer (24a),
(25e), each photoconductive layer (24d), (
25d), and protect each photoreceptor (24), (
25) In addition to prolonging the service life, each photoconductive layer (z4d
), (zsd) can be prevented from decreasing in light absorption efficiency, and image quality can be improved. In other words, (μc-5t) has a relatively large refractive index of 3 to 4 due to its characteristics, and it is easy to cause light reflection on one surface, but one surface layer (24
e) By providing * (25e), light reflection is prevented, the amount of light absorbed by the photoconductive layers (24d) and (25d) is increased, and a clear image is obtained. Note that this invention is not limited to the above embodiments, and various design changes are possible. For example, (μc-3i) in the carrier generation layer
The ratio is completely arbitrary, and as long as the blocking layer and the carrier transport layer improve the charging ability,
[%] (μc-5i) may be used. Further, the mixture of (μc-8i) and (a-5i) may be dispersed and mixed in a single layer, or (
A thin layer of μc-8i) and a thin layer of (a-5i) may be layered. Furthermore, the structure of the photoconductor is completely arbitrary; a blocking layer is not necessary as long as it can maintain charging ability, and even without a surface layer as long as it can compensate for abrasion resistance and light reflection. In addition, a blocking layer, a carrier transport layer, a carrier generation layer,
The thickness of each surface layer is also arbitrary, and the manufacturing method is also optical CV.
D method, sputtering method, etc. may be used. [Effects of the Invention] As explained above, according to the present invention, the carrier generation layer has a material having excellent heat resistance, moisture resistance, and strong mechanical strength (μc-S).
By using i), the spectral sensitivity in the visible light region and the near-infrared region can be improved, and the image quality can also be improved.
It becomes possible to apply it to laser printers and the like, and furthermore, the lifespan thereof can be extended. In addition, it can be manufactured safely using a closed system manufacturing equipment using a reaction vessel, and since the material is harmless to the human body, there is no need to install waste gas treatment equipment, and the photoreceptor can be removed after use. It is also not necessary to recover the waste, which in turn can improve economic efficiency. Furthermore, by providing a surface layer as in the embodiment, a longer life can be achieved, and by providing a blocking layer, the charging ability can be improved.

[Brief explanation of the drawing]

Figures 1 to 4 show one embodiment of the present invention.
The figure is a schematic explanatory diagram showing the film forming apparatus, and Figure 2 is the first
Figure 3 is a partial cross-sectional view showing the second photoreceptor, Figure 4 is a graph showing its spectral sensitivity characteristics, and Figure 5 is (μc-8i). It is a graph showing X-ray diffraction of (a-3i).

Claims (1)

[Scope of Claims] 1. A photoconductive layer comprising a blocking layer, a carrier generation layer and a carrier transport layer is provided on a conductive support, wherein the blocking layer has a photoconductive layer based on a photoconductive layer selected from group I of the periodic table.
Group II elements or Group V elements of the periodic table and/or carbon,
The carrier generation layer is made of amorphous silicon containing at least one atom of oxygen or nitrogen, and the carrier generation layer has microcrystalline silicon in the layer,
The carrier transport layer contains at least one atom of carbon, oxygen, and nitrogen, and further contains an element of Group III of the periodic table or an element of Group V of the periodic table. A photoconductor characterized by being made of amorphous silicon containing an element of Group V of the periodic table. 2. The blocking layer has a thickness of 100 [Å] to 10 [μ]
m], the carrier generation layer has a film thickness of 0.1 [μm] to 5 [μm], and the carrier transport layer has a film thickness of 3 [μm].
The photoconductor according to claim 1, wherein the photoconductor has a thickness of from 80 [μm] to 80 [μm]. 3. A film thickness of 100 [Å] to 20 [μm] on the surface of the photoconductive layer.
3. The photoconductor according to claim 1 or 2, characterized in that the photoconductor is provided with a surface layer. 4. The photoconductor according to any one of claims 1 to 3, wherein the surface layer is made of amorphous silicon containing at least one atom among carbon, oxygen, and nitrogen. 5. The photoconductor according to any one of claims 1 to 4, wherein the carrier generation layer contains hydrogen atoms. 6. The photoconductor according to any one of claims 1 to 5, wherein the carrier generation layer is made of a mixture of microcrystalline silicon and amorphous silicon.