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JPS6128030B2 - - Google Patents

Info

Publication number
JPS6128030B2
JPS6128030B2 JP55169057A JP16905780A JPS6128030B2 JP S6128030 B2 JPS6128030 B2 JP S6128030B2 JP 55169057 A JP55169057 A JP 55169057A JP 16905780 A JP16905780 A JP 16905780A JP S6128030 B2 JPS6128030 B2 JP S6128030B2
Authority
JP
Japan
Prior art keywords
chamber
cassette
substrates
processing
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55169057A
Other languages
Japanese (ja)
Other versions
JPS5792838A (en
Inventor
Nobuyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP16905780A priority Critical patent/JPS5792838A/en
Publication of JPS5792838A publication Critical patent/JPS5792838A/en
Publication of JPS6128030B2 publication Critical patent/JPS6128030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【発明の詳細な説明】 本発明はカセツトに収容された被処理基板、例
えばシリコンウエハー等をカセツトより順次取出
してスパツタ処理を行なつた後、再びカセツトに
収容する、いわゆるカセツト・ツウ・カセツト基
板処理装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to so-called cassette-to-cassette substrates, in which substrates to be processed, such as silicon wafers, etc., housed in a cassette are sequentially taken out from the cassette, subjected to sputtering processing, and then put back into the cassette. It relates to a processing device.

この種従来の装置として第1図の側面図に見ら
れるカセツト・ツウ・カセツト スパッタ装置を
例に挙げて説明すると、これは大気より真空雰囲
気へ被処理基板を挿入するための挿入室1、スパ
ツタ等の処理を行なう処理室2および処理後の基
板を大気中へ取出す為の取出室3により構成され
ている。そして、挿入室1、処理室2および取出
室3は、それぞれ図示されていない排気ポンプに
より真空状態にすることができるようになつてい
る。
Taking the cassette-to-cassette sputtering apparatus shown in the side view of FIG. 1 as an example of a conventional apparatus of this type, this includes an insertion chamber 1 for inserting a substrate to be processed from the atmosphere into a vacuum atmosphere, The processing chamber 2 includes a processing chamber 2 for performing processing such as the above, and a take-out chamber 3 for taking out the processed substrate into the atmosphere. The insertion chamber 1, the processing chamber 2, and the extraction chamber 3 can each be brought into a vacuum state by an exhaust pump (not shown).

このカセツト・ツウ・カセツト スパツタ装置
によれば、まず、挿入室1には大気雰囲気時に被
処理基板4を複数枚収容したカセツト5が一式挿
入される。このとき、挿入室1と処理室2の間に
設けられた封止バルブ6は閉じられており、処理
室2は真空に保たれている。次に、挿入室1を排
気した後、封止バルブ6を開き、被処理基板4を
順次一枚づつ、通常はカセツト5の下部の基板よ
り図示されていない搬送機構により処理室2へ送
り込まれる。処理室2には、スパツタ電極7が設
けられており、カセツト5より送り込まれた被処
理基板4へ膜付けを行なうことができるようにな
つている。一方、取出室3の内部にはカセツト8
が収容されており、処理室2で処理の終つた被処
理基板4を順次一枚づつ、通常はカセツトの8の
上部の位置より収容する。挿入室1に当初収容さ
れていた被処理基板4の全数が取出室3内のカセ
ツト8に収容された後、取出室3は大気へ導入さ
れ、カセツト8と共に処理の終つた被処理基板4
を取出して一工程が終了する。
According to this cassette-to-cassette sputtering apparatus, first, a set of cassettes 5 containing a plurality of substrates 4 to be processed are inserted into the insertion chamber 1 in an atmospheric atmosphere. At this time, the sealing valve 6 provided between the insertion chamber 1 and the processing chamber 2 is closed, and the processing chamber 2 is kept in a vacuum. Next, after evacuating the insertion chamber 1, the sealing valve 6 is opened, and the substrates 4 to be processed are sent one by one, usually from the lower substrate of the cassette 5, into the processing chamber 2 by a transport mechanism (not shown). . A sputter electrode 7 is provided in the processing chamber 2 so that a film can be applied to the substrate 4 to be processed fed from the cassette 5. On the other hand, there is a cassette 8 inside the extraction chamber 3.
The substrates 4 to be processed that have been processed in the processing chamber 2 are accommodated one by one, usually from a position above 8 of the cassette. After all of the substrates 4 to be processed, which were originally accommodated in the insertion chamber 1, have been accommodated in the cassettes 8 in the extraction chamber 3, the extraction chamber 3 is introduced into the atmosphere, and together with the cassette 8, the substrates 4 to be processed that have been processed are stored in the cassette 8 in the extraction chamber 3.
One process is completed when the is removed.

しかしながら、このような従来の方法によるカ
セツト・ツウ・カセツト スパツタ装置において
は、真空室として少なくとも挿入室、処理室およ
び取出室の3室を必要とする。その結果、前記各
室を真空状態とするための排気ポンプも3式必要
となるために装置の価格を高めるばかりでなく、
設置に際してのスペースフアクターも良くなかつ
た。又、カセツトの挿入位置と取出位置が異なる
ために作業性を損なうとともに、挿入カセツトと
取出カセツトとが区別されているためにカセツト
毎のロツト管理に困難をともなうという欠点があ
つた。
However, such a conventional cassette-to-cassette sputtering apparatus requires at least three vacuum chambers: an insertion chamber, a processing chamber, and an extraction chamber. As a result, three sets of exhaust pumps are required to evacuate each chamber, which not only increases the cost of the device, but also increases the cost of the equipment.
The space factor for installation was also poor. Further, the insertion and removal positions of the cassettes are different, which impairs work efficiency, and the separation of the insertion and removal cassettes makes it difficult to manage lots for each cassette.

本発明の目的は、基板の挿入室と取出室を兼用
させることによつて、排気ポンプを節約し、設備
のスペースフアクターが良く、かつ作業管理面に
おいても効率のよいカセツト・ツウ・カセツト基
板処理装置を提供するにある。
It is an object of the present invention to provide a cassette-to-cassette substrate system that saves on exhaust pumps, has a good space factor for equipment, and is efficient in terms of work management by using both the board insertion chamber and the unloading chamber. To provide processing equipment.

本発明によれば、被処理基板にスパツタリン
グ、蒸着、ドライエツチング、これらの前処理等
を行なう少なくとも1つの処理室と、これ等処理
室と別個に排気でき、かつこれ等処理室の1つと
結合された基板挿入取出兼用室とを設け、この基
板挿入取出兼用室に、夫々複数枚の基板を収容で
きる2式のカセツトを収納し、この2式のカセツ
トのうちの1方のカセツトから前記基板処理室へ
基板を搬送する機構と、処理済みの基板を前記処
理室から前記2式のカセツトのうちの他方のカセ
ツトに搬送収容する機構と、前記2式のカセツト
間に、前記収容した基板の全数を移し換える機構
とを備えてなるカセツト・ツウ・カセツト基板処
理装置が得られる。
According to the present invention, there is at least one processing chamber for performing sputtering, vapor deposition, dry etching, pre-treatment, etc. on a substrate to be processed, and a chamber which can be evacuated separately from these processing chambers and which is coupled to one of these processing chambers. Two cassettes, each capable of storing a plurality of boards, are stored in the board insertion/unloading chamber, and the board is inserted into the board from one of the two cassettes. A mechanism for transporting substrates to the processing chamber, a mechanism for transporting and storing processed substrates from the processing chamber to the other of the two cassettes, and a mechanism for transporting the stored substrates between the two cassettes. A cassette-to-cassette substrate processing apparatus equipped with a mechanism for transferring all substrates is obtained.

次に、本発明によるカセツト・ツウ・カセツト
スパツタ装置の実施例について第2図の側面図
を参照して説明する。図において、真空容器は挿
入取出兼用室10と処理室2′の2室とより構成
されており、それぞれ図示されていない排気ポン
プにより真空状態にすることができるようになつ
ている。被処理基板4は当初はカセツト11に収
容された状態で挿入取出兼用室10に挿入され
る。次に、挿入取出兼用室10を真空に排気する
と共に、カセツト11に収容されている被処理基
板4の複数枚全数は直ちに同一室内にあらかじめ
収容されているもう1つのカセツト12に移しか
えられる。この基板移しかえの方法は図示されて
いないが、例えば、Oリングによるベルトを2つ
のカセツト11と12を通じてかけておき、カセ
ツト11と12の上下操作により移しかえたい基
板の位置をベルト面に合わせることによつて容易
に行なうことができる。
Next, an embodiment of the cassette-to-cassette sputtering apparatus according to the present invention will be described with reference to the side view of FIG. In the figure, the vacuum container is composed of two chambers, an insertion/extraction chamber 10 and a processing chamber 2', each of which can be brought into a vacuum state by an exhaust pump (not shown). The substrate 4 to be processed is initially housed in a cassette 11 and inserted into the loading/unloading chamber 10. Next, the insertion/extraction chamber 10 is evacuated, and all of the plurality of substrates 4 to be processed stored in the cassette 11 are immediately transferred to another cassette 12 previously stored in the same chamber. Although this method of transferring the substrate is not shown, for example, a belt using an O-ring is passed through the two cassettes 11 and 12, and the position of the substrate to be transferred is aligned with the belt surface by moving the cassettes 11 and 12 up and down. This can be easily done by

挿入取出兼用室10の内部が所定の真空度まで
排気されたのち、封止バルブ13を開いてカセツ
ト12内に収容されている被処理基板4が処理室
2′に送り込まれる。この処理室2′へ基板を送り
込む機構は、従来技術により知られているよう
に、封止バルブ13の開閉部に隣接する個所から
挿入取出兼用室10側においては前述の基板移し
かえ機構の封止バルブ13側に延びているベルト
によつて容易に得られ、また処理室2′側におい
ては封止バルブ13の開閉部に隣接する個所から
室中央部までかけられたベルトによつて得られ
る。処理室2′に送り込まれた基板は、第1図に
おけると同じ方法によつてスパツタ処理による膜
付けを行なう。
After the interior of the insertion/extraction chamber 10 is evacuated to a predetermined degree of vacuum, the sealing valve 13 is opened and the substrate to be processed 4 housed in the cassette 12 is sent into the processing chamber 2'. As is known from the prior art, the mechanism for feeding the substrate into the processing chamber 2' starts from a location adjacent to the opening/closing part of the sealing valve 13 and closes the aforementioned substrate transfer mechanism on the side of the loading/unloading chamber 10. This can be easily achieved by a belt extending to the stop valve 13 side, and can also be obtained by a belt running from a point adjacent to the opening/closing part of the seal valve 13 to the center of the chamber on the processing chamber 2' side. . The substrate sent into the processing chamber 2' is coated with a film by sputtering in the same manner as shown in FIG.

処理済の基板は再度挿入取出兼用室10に戻さ
れ、すでにカセツト12に被処理基板4の全数を
移し換えられて空の状態となつているカセツト1
1に収容される。このようにして、カセツト12
より順次1枚づつ処理室2に送り込まれた被処理
基板4はスパツタ処理による膜付け後、全て処理
された基板として当初収容されていたカセツト1
1に収容される。それから、封止バルブ13が閉
じられ、挿入取出兼用室10に大気が導入され
る。かくして、大気中へカセツト11に取りだ
し、処理された基板の全部を回収することができ
る。
The processed substrates are again returned to the insertion/extraction chamber 10, and the cassette 1, which is empty after all the substrates 4 to be processed have already been transferred to the cassette 12, is returned to the loading/unloading chamber 10.
It is accommodated in 1. In this way, the cassette 12
The substrates 4 to be processed are sent into the processing chamber 2 one by one after being coated with a film by sputtering, and then transferred to the cassette 1 which was originally housed as a fully processed substrate.
It is accommodated in 1. Then, the sealing valve 13 is closed, and the atmosphere is introduced into the insertion/extraction chamber 10. In this way, all of the processed substrates can be taken out into the atmosphere into the cassette 11 and recovered.

なお、上記実施例の説明においては、基板の処
理前に2式のカセツト間の移し換えを行なつた
が、処理後に移し換えを行なつても全く同様の効
果が得られることは明らかであろう。
In the explanation of the above embodiment, the transfer between the two cassettes was performed before processing the substrate, but it is clear that the same effect can be obtained even if the transfer is performed after processing. Dew.

また、上記実施例においては、基板処理室とし
て1室を設けたが、前処理等を含む複雑な工程に
対応できるよう、複数の処理室を備えることがで
きる。又、例として、スパツタリングによる薄膜
処理の方法を挙げたが、スパツタリング以外の蒸
着とか、ドライエツチングなどにも全く同様に適
用できることは言うまでもない。
Further, in the above embodiment, one chamber is provided as the substrate processing chamber, but a plurality of processing chambers may be provided so as to be able to handle complicated processes including pre-processing and the like. Further, as an example, a thin film processing method using sputtering has been mentioned, but it goes without saying that the present invention can be similarly applied to other methods such as vapor deposition and dry etching.

以上の説明により明らかなように、本発明によ
れば、同一真空容器内に2式のカセツトを設け、
相互に基板の移しかえを行なうことによつて容易
に基板の処理ができるばかりでなく、(1) 基板収
容カセツトの挿入、取出しが同一の個所でできる
ために作業性がよく、(2) 処理前の基板と処理後
の基板が同一のカセツトに収容された状態で取り
だされるためにロツト管理が容易となり、(3) カ
セツトの挿入室と取出室を兼用できるために真空
容器および排気ポンプが1式分少なく、経済的で
あり、(4) 装置設置のための床面積が小さく、ス
ペースフアクターが良くなる等の利点が得られ
る。
As is clear from the above explanation, according to the present invention, two sets of cassettes are provided in the same vacuum container,
Not only can the substrates be easily processed by mutually transferring the substrates, but also (1) work efficiency is improved because the substrate storage cassette can be inserted and removed from the same location, and (2) processing is easier. (3) Since the previous substrate and the processed substrate are taken out while being housed in the same cassette, lot management is easy; (4) It requires less floor space for equipment installation, which improves the space factor.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の方法によるカセツト・ツウ・カ
セツト スパツタ装置の構成例を示す側面図、第
2図は本発明による実施例の構成を示す側面図で
ある。図において、1は挿入室、2,2′は処理
室、3は取出室、4は被処理基板、5,8,1
1,12はカセツト、6,9,13は封止バル
ブ、7はスパツタ電極、10は挿入取出兼用室で
ある。
FIG. 1 is a side view showing an example of the configuration of a conventional cassette-to-cassette sputtering device, and FIG. 2 is a side view showing the configuration of an embodiment according to the present invention. In the figure, 1 is an insertion chamber, 2, 2' are processing chambers, 3 is an extraction chamber, 4 is a substrate to be processed, 5, 8, 1
1 and 12 are cassettes, 6, 9, and 13 are sealing valves, 7 is a sputter electrode, and 10 is an insertion/extraction chamber.

Claims (1)

【特許請求の範囲】[Claims] 1 被処理基板にスパツタリング、蒸着、ドライ
エツチング、これらの前処理等を行なう少なくと
も1つの処理室と、これ等処理室と別個に排気で
き、かつこれ等処理室の1つと結合された基板挿
入取出兼用室とを設け、この基板挿入取出兼用室
に、夫々複数枚の基板を収容できる2式のカセツ
トを収納し、この2式のカセツトのうちの1方の
カセツトから前記基板処理室へ基板を搬送する機
構と、処理済みの基板を前記処理室から前記2式
のカセツトのうちの他方のカセツトに搬送収容す
る機構と、前記2式のカセツト間に、前記収容し
た基板の全数を移し換える機構とを備えてなるカ
セツト・ツウ・カセツト基板処理装置。
1. At least one processing chamber for performing sputtering, vapor deposition, dry etching, pretreatment, etc. on substrates to be processed, and a substrate insertion/extraction chamber that can be evacuated separately from these processing chambers and is coupled to one of these processing chambers. Two cassettes each capable of storing a plurality of substrates are stored in the substrate insertion/extraction chamber, and substrates are transferred from one of the two cassettes to the substrate processing chamber. a mechanism for transporting, a mechanism for transporting and accommodating processed substrates from the processing chamber into the other of the two cassettes, and a mechanism for transferring all of the accommodated substrates between the two cassettes. A cassette-to-cassette substrate processing device comprising:
JP16905780A 1980-12-02 1980-12-02 Cassette to cassette substrate process device Granted JPS5792838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16905780A JPS5792838A (en) 1980-12-02 1980-12-02 Cassette to cassette substrate process device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16905780A JPS5792838A (en) 1980-12-02 1980-12-02 Cassette to cassette substrate process device

Publications (2)

Publication Number Publication Date
JPS5792838A JPS5792838A (en) 1982-06-09
JPS6128030B2 true JPS6128030B2 (en) 1986-06-28

Family

ID=15879535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16905780A Granted JPS5792838A (en) 1980-12-02 1980-12-02 Cassette to cassette substrate process device

Country Status (1)

Country Link
JP (1) JPS5792838A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6015917A (en) * 1983-07-08 1985-01-26 Hitachi Ltd Molecular beam epitaxy equipment
JPS60117615A (en) * 1983-11-30 1985-06-25 Hitachi Ltd Molecular beam epitaxy device
DE3427057A1 (en) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart SYSTEM FOR THE PRODUCTION OF SEMICONDUCTOR LAYER STRUCTURES BY EPITACTIC GROWTH
JPH0612605Y2 (en) * 1985-01-17 1994-03-30 日新電機株式会社 End station for ion implanter

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53104580A (en) * 1977-02-25 1978-09-11 Ulvac Corp Vacuum continuous treatment apparatus
JPS58696Y2 (en) * 1978-08-07 1983-01-07 株式会社徳田製作所 Sample processing equipment

Also Published As

Publication number Publication date
JPS5792838A (en) 1982-06-09

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