JPS6127463B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a planar magnetron sputtering apparatus for forming a thin film on a substrate to be film-formed.

Sputtering technology generates a glow discharge in a low-pressure atmospheric gas of about 10 ^-4 to ^{10 -2} Torr, and ionizes this sputtering atmospheric gas (in the form of plasma).
A voltage applied between the cathode and the anode accelerates the plasma-like ions and causes them to collide with a flat plate of target material placed at the cathode. The sputtering film forming technique is a technique in which target material particles ejected by colliding ions are deposited on a substrate placed near the anode to form a thin film of the target material.

The sputtering method described above is called a conventional diode type, and has the following drawbacks: (1) The deposition rate is low.

(2) The amount of charged particles flowing into the substrate is large, and the temperature of the substrate increases significantly. Furthermore, this flow of charged particles may damage semiconductor devices.

In order to solve the above-mentioned drawbacks of the convectional diode sputtering method, a magnetron-type sputtering electrode was developed. A permanent magnet or an electromagnet is placed on the second main surface side of the main surface to form an arc-shaped magnetic field on the first main surface, and the sputter gas ions that have been ionized into a plasma are focused by this magnetic field, making them more dense. A high plasma is formed and a target flat plate is bombarded with a higher current density to obtain a high film deposition rate. Among magnetron sputter electrodes, planar magnetron electrodes in which the target material is a flat plate have been most frequently used in recent years. The deposition rate using planar magnetron electrodes has become comparable to conventional resistance heating and electron beam heating evaporation methods.
It has come to be incorporated into the production process as a thin film forming apparatus for thin film integrated circuits and semiconductor devices.

FIG. 1 is a conceptual explanatory diagram showing the structure of a sputtering apparatus using a planar magnetron type sputtering electrode according to a well-known prior art. Target material flat plate (hereinafter simply referred to as target)
A circular magnetic pole 2 magnetically coupled to the back surface of the circular magnetic pole 1 by a yoke 6, and a cylindrical magnet 3 at the center of the circular magnetic pole 2 are arranged to form a magnetic circuit. These magnetic poles 2 and 3 create a tunnel-like magnetic field distribution in the space on the surface of the target 1 (the first main surface, the lower side in FIG. 1), that is, a plane perpendicular to the height direction of the torus. When the target 1 is cut in half, the half-cut surface is parallel to the first main surface of the target 1, and a tunnel-shaped magnetic field distribution 11 is generated. This tunnel-like magnetic field distribution 11 confines the above-mentioned plasma-like ions inside at a high concentration. These plasma-like ions are further generated along lines of electric force that are incident perpendicularly to the first main surface of the target, which is generated by the voltage applied between the anode 10 and the first main surface of the target, which is the cathode surface. The first target
is incident on the main surface of the target material, thereby causing sputtering and forming an eroded region 12 in the target.

As is well known, the electrons existing in the plasma move along the ring in the plasma generated in a ring while making trochoidal motion due to the tunnel magnetic field, ionizing sputter gas molecules and releasing ionization energy. The lost electrons flow into the anode. For this reason, the amount of electrons flowing into the film-forming target substrate 101 is significantly reduced. Furthermore, since most of the sputter gas molecules turned into plasma head toward the target 1, there is little inflow of positively charged particles into the substrate on which the film is to be formed.

In recent years, with the advent of large-scale integrated circuits, the miniaturization of semiconductor devices has progressed significantly, and even slight damage to the crystal substrate can have a large impact on the devices. However, charged particles flowing into the substrate have the disadvantage of reducing device yield in highly integrated MOS memory ICs and the like.

The purpose of the present invention is to eliminate the above-mentioned drawbacks of the prior art, and to suppress the inflow of charged particles to a substrate to be film-formed during film-forming by a sputtering film-forming method using a planar magnetron sputter electrode. An object of the present invention is to provide a planar magnetron sputtering apparatus that can prevent a temperature rise of a substrate to be film-formed and reduce damage to semiconductor elements and the like formed on the substrate to be film-formed.

That is, the present invention uses a sputtering device using a planar magnetron sputtering electrode to form, on the first main surface of a target flat plate which is eroded by sputtering, a distribution of lines of magnetic force that are incident almost perpendicularly to the first main surface. to suppress the top of the tunnel-shaped magnetic flux, and at the same time apply a positive potential to the substrate to be film-formed or to a cylindrical metal member provided around the film-forming substrate, thereby producing light, negatively charged charged particles (i.e., electrons) during film-forming. The present invention is characterized in that it is possible to reduce the amount of particles flowing into the substrate on which a film is to be formed and the collision speed of positively charged particles with the substrate.

The present invention will be specifically described below based on embodiments shown in the drawings. That is, the main points of the present invention will be specifically explained.

As shown in FIG. 4, in order to confirm the presence or absence of charged particles flowing into the substrate 101, a copper plate is used as the substrate, and the relationship between the current flowing into the substrate and the voltage applied to the substrate is examined. For this purpose, ammeter 20
1. Install the voltmeter 202. Hereinafter, the current flowing into the substrate will be referred to as Is, and the applied voltage will be referred to as Vs. The polarity of Is is positive when it flows from the substrate 101 to the substrate bias power supply 203, and the polarity of Vs is positive when it flows from the substrate 101 to the grounded vacuum chamber 103.
Suppose that it is for.

Figure 2 shows the substrate inflow current Is and the substrate applied voltage Vs.
This shows the relationship between At this time, the size of the target of the sputter electrode is 8 inches, the size of the plasma ring is made of 99.999% aluminum, and the distance between the first main surface of the target and the substrate 101 is 95 mm. The sputter gas pressure is 99.999% pure argon.
It was introduced so that it would be 5.4mTorr. The voltage and current applied to the target ivy are 405V and 13.5A, respectively.
In other words, the electrical input to the target is 405×13.5≒
It was 5.5KW.

As shown in Figure 2, the substrate bias voltage Vs
When Is is gradually increased from 0V (with the board grounded) to a negative value, the board current Is rapidly decreases from minus several amperes and becomes almost zero at about Vs = -7V. As Vs is further increased to a negative value, the substrate current Is increases positively and eventually begins to saturate, resulting in Vs=-
From about 10V, Is increases almost linearly as Vs becomes more negative.

The substrate potential-current characteristic as described above can be interpreted as described below.

First, since the substrate potential is -40V at most, ions and electrons that can serve as current carriers of the substrate current are not emitted from the substrate side. Therefore, it can be considered that the substrate current is generated entirely by electrons flowing into the substrate due to positive ions.

Therefore, it is considered that the charge carriers of the large current that flows when the substrate potential Vs is brought closer to zero V from about -10 V are electrons. Furthermore, most of the kinetic energy of the electrons during the sputtering phenomenon is consumed to ionize the sputtering gas, and the ionization energy of the sputtering gas,
If it is argon, it will be limited to 15.76eV or less. Therefore, the kinetic energy of the electron is at most
It is 16eV or less. Even if electrons with a kinetic energy of 10 eV fly toward the substrate, if the substrate potential Vs is about minus 10 V, almost all of those electrons will be decelerated before reaching the substrate and will flow into the substrate. I can't.

From the above considerations, the substrate potential Vs can be changed from 0V to −
At about 10V, the main component of the negative current can be considered to be electrons flying into the substrate.
On the other hand, the current flowing positively when the substrate potential Vs is −10 V or less is considered to be caused by some positively charged particles flowing into the substrate. In other words, the substrate potential Vs - current Is characteristic shown in Fig. 2 corresponds to the straight line 301 in Fig. 3.
It is assumed that the straight line 301 is the positive ion component and the curve 302 is the electron flow component.

That is, as shown in FIG.
A uniform magnetic field 410 parallel to the plane was generated by an electromagnet 401, and the substrate potential Vs-current characteristic Is was determined. This is shown in FIG. Curves 402, 403,
When the uniform magnetic field 410 on the substrate 101 was increased in the order of 404, the component considered to be the electron flow component decreased, but the current component considered to be the positive ion current component hardly changed. From this, it was inferred that the two current components were large and the masses of the respective charge carriers were greatly different, confirming the above-mentioned speculation.

As mentioned above, it has been found that charged particles flowing into the substrate 101 to be film-formed can be discriminated to some extent by the substrate bias potential Vs. The results of examining the degree of damage caused to semiconductor elements are described below.

The substrate used for evaluating element damage was a silicon wafer with conductivity type P. After forming a thermal oxide film of 1000 Å, aluminum was deposited in spots on the thermal oxide film using a mask as shown in Fig. 4. The film was formed using the system shown in . 99.999% A-2% Si was used as the target material, the film formation rate was 3300 Å/min, the film thickness was 0.9 μm,
The distance between the substrate and target is 94mm. The substrate bias during film formation is at the four points in Figure 2, namely 151,
I chose 152, 153, and 154. The reason for choosing these points in Figure 2 is that only positive ions flow in, and the magnitude of the accelerating voltage for the positive ions, and also the magnitude of the electron flow when the electron flow flows together with the positive ion current. This is to investigate the influence of each case.

Figure 6 shows the capacitance vs. voltage characteristics (usually called the CV curve) obtained under the film formation conditions described above.
shows. The measurement frequency is 1MHz, and since this is a well-known method for measuring CV curves, we will omit the explanation. Curves 501, 502, 503, 50 in Figure 6
4 are 151, 152, and 15 in Figure 2, respectively.
This corresponds to the substrate bias conditions of 3,154 points. The curves in Figure 6 were measured on samples heat-treated in a hydrogen atmosphere at 500°C for 1 hour after film formation, and curves 501, 502, and 503 were obtained immediately after film formation by resistance heating evaporation. The CV curve 505 is slightly shifted to the left, and the magnitude of the shift is 50
It was found that the order of numbers is 1,502,503. Curve 504 is mostly CV due to resistance heating evaporation.
It almost matches the curve.

The deviation from the CV curve obtained by resistance heating evaporation can be considered to be due to some damage occurring in the thermal oxide film, as is well known in electron beam evaporation.

It is thought that the sample formed under the conditions shown in Fig. 2 154 has the least damage, but in reality, an electron current of the order of 1 ambae flows, so a current flows through the aluminum thin film formed on the silicon wafer. Joule heat generation occurred, and the temperature rose to about 430°C at the end of film formation. This rise in substrate temperature causes the film to become cloudy. When the deposition rate was further increased beyond 3300 Å, the deposited aluminum thin film sometimes melted.

As mentioned above, if a substrate bias is applied in a direction that suppresses the electron flow, the device will be seriously damaged, and on the other hand, if a certain amount of substrate bias is not applied, the electron beam will flow in a large amount and the temperature of the substrate will rise significantly. I found out something.

As is well known, the movement of the CV curve mentioned above is
Changes the threshold voltage of the transistor characteristics of a MOS transistor. Currently, ultra-fine devices are gradually being manufactured, and it is preferable for process control to keep such fluctuations in transistor characteristics as small as possible. Furthermore, an excessive rise in substrate temperature during film formation is not desirable in terms of the film formation process.

The gist of the present invention will be explained more specifically. 12th
The figure shows a conventional planar magnetron sputter electrode in which the magnetic flux generating means is an electromagnet, the coil of which is wound twice, and the energizing current of each can be set independently and arbitrarily. A new third magnetic pole made of an annular soft magnetic material (high magnetic permeability material) is provided between each coil.

Pass current through the inner coil and place it on the target surface for 10~
At a height of 30 mm, the magnetic field component parallel to the target flat plate surface should be approximately 200 Gauss. When sputtering gas is introduced in this state and a negative high voltage (-600V) is applied to the sputtering electrode, a plasma ring is generated. At this time, the position where the plasma ring is generated is approximately on the third magnetic pole.

Further, a current is passed through the outer excitation coil in the opposite direction to that of the inner excitation coil. As the outer excitation current is gradually increased from zero, the prism ring becomes smaller in diameter. When the current of the outer excitation coil is increased until the ratio of the magnetomotive force (ampere turns) between the outer excitation coil and the inner excitation coil becomes about 1:2, the size of the plasma ring becomes the same as when the outer excitation current is zero. The diameter is approximately 1/2 that of the previous one.

If the position where the plasma ring is generated can be controlled by configuring the sputter electrode with double wraps in this way, there will be advantages in using the sputter electrode.

That is, in the conventional planar magnetron type sputter electrode, the area of consumption of the target generated by sputtering is a thin annular shape, and therefore only a portion of the target is sputtered, resulting in a low material utilization efficiency of the target.

Since the generation position of the plasma ring is fixed, in order to obtain a good film thickness distribution on the substrate to be deposited, the distance between the substrate to be deposited and the target flat plate must be increased to some extent. Therefore, the yield of spatter particles scattered from the target on the substrate is low.

As target wear progresses and valleys begin to form in the eroded area on the target plate,
The film thickness distribution characteristics deteriorate.

However, by moving the position of the plasma ring, the above-mentioned drawbacks can be overcome. However, when the current in the outer excitation coil is increased and the plasma ring is brought closer to the center of the target flat plate, the cross section of the plasma ring becomes shaped like 1305 shown in FIG. 14, and the plasma grows toward the substrate on which the film is to be deposited. Plasma ring is the first
When it develops like 1305 shown in FIG. 4, a very large substrate current flows. Furthermore, the number of positively and negatively charged particles flowing into the substrate also increases significantly. Therefore, the gist of the present invention is that the sputtering apparatus is equipped with means for generating a magnetic field that is incident almost perpendicularly to the surface of the target flat plate, and that is equipped with means for applying a substrate bias. The features of the electrode can be maximized.

By the way, FIG. 7 shows an embodiment of the present invention, in which 1 is a disk-shaped target material, with a diameter of 200 mm.
mm, thickness 6mm, material: 99.999% aluminum 2
% silicon is used. 2 is an annular magnet, and 3 is a cylindrical magnet placed at the center of the target material. Magnets 2 and 3 form a tunnel-like magnetic field distribution as shown in 11 on the target surface (lower side in the figure). 6 is the magnetic coupling means of 2 and 3 and is made of soft magnetic material. 111 is a coil wound around the outside of the vacuum container 102 according to the present invention. 101 is a substrate to be film-formed, 201, 202
are the ammeter and voltmeter on the board, respectively. 203
is a low voltage power supply for applying substrate bias according to the present invention. 20 is a high voltage constant current source for sputtering.

22 is an argon cylinder used as sputter gas, and 21 is a sputter gas pressure regulating valve that can control the flow rate for introducing argon gas. 24 is a vacuum pump for vacuum evacuation.
A pump with a pumping speed of 1000/sec was used. 23
is a vacuum exhaust valve.

The method of actually forming a film by sputtering using this example will be described below.

First, the vacuum container 102 was evacuated to a high vacuum of about 10 ^-7 Torr by the evacuation means 23 and 24 . 21
was opened, and argon gas was introduced through 21 so that the pressure inside the vacuum chamber was 5.4 mTorr. Turn on the substrate bias power supply 203 and set the potential of the substrate to the vacuum chamber 102.
Set 203 so that the voltage is -40V to +20V. Next, the electromagnetic coil 111 is energized so that a magnetic field in the direction perpendicular to the target is obtained, and the electromagnetic coil 111 is energized so that a magnetic field of about 30 Gauss can be obtained near the center of the target plate 1 using only the electromagnetic coil.
11 was set.

The high voltage constant current source 20 for sputtering was turned on, and a negative high voltage was applied to the target plate 1 with respect to the vacuum vessel to generate plasma on the target.

With the shutter 30 closed, sputtering was performed for 3 minutes with a power of 5KW applied to the target, and then the shutter 30 was opened and a film was deposited on the 4-inch silicon wafer 101, which was the substrate to be deposited.
It was carried out for 2.5 minutes, and a film thickness of about 9000 Å was obtained.

When the characteristics of the substrate bias voltage Vs and the substrate inflow current Is were investigated under the above conditions, the characteristics as shown by a curve 801 in FIG. 8 were obtained. Curve 802 in the same figure
is the characteristic when no current is passed through the electromagnet 111. Four points 811, 812, 8 on the curve 801
13,814 and a point 815 on the curve 802 to prepare a sample. After the film formation, heat treatment was performed at 450° C. for 1 hour in a hydrogen atmosphere. The CV curves obtained from these samples are shown in FIG. curve 9
01, 902, 903, 905 are the 8th
Substrate bias conditions 811, 812, 813,
814 compatible. Further, 904 corresponds to the condition 815 in FIG. Curve 90 in Figure 9
6 is a CV curve obtained from a film formed on the same sample by the resistance heating vapor deposition method.

From the experimental conditions shown in Figure 8 and the experimental results shown in Figure 9, the substrate potential was positive and the amount of electron beam inflow was reduced.
It can be seen that the curve 905 under condition No. 14 coincides with the CV curve obtained by resistance heating vapor deposition, and there is almost no element damage caused by the inflow of charged particles into the substrate.

As described above, the technical idea of the present invention is to make the substrate potential Vs and current Is characteristics shown by the curve 802 in FIG. The means for generating the second magnetic field moves the top of the tunneling magnetic field away from the substrate 101, thereby essentially reducing the amount of electrons flowing into the substrate 101.
By forcibly deforming the curve 801 in the figure, it is possible to form a film at a point 801 in the figure 8, which is a point on the characteristics of the substrate potential Vs and current Is that cannot be obtained with conventional sputtering equipment. be.

FIG. 10 shows a second embodiment of the invention. The embodiment of FIG. 10 differs from that of FIG. 7 in the following points. In other words, the anode 10 in FIG. 7 is lowered to the height of the substrate 101 and further horizontally surrounds the periphery of the substrate, and the anode bias voltage V _A is applied to the anode without directly grounding the anode 10'. The bias voltage can be applied by the bias power supply 99, and the substrate is directly grounded by the substrate holding mechanism.

In the second embodiment as described above, the substrate 101
Although the anode 10' is grounded, by changing the potential of the anode 10', a potential difference with the substrate 101 can be created.
It will be appreciated that this embodiment is essentially the same as the first embodiment.

Furthermore, similar effects can be expected with a configuration as shown in FIG. 11 in which the anode 10' of FIG. 10 is divided into several parts. In this case, a method of use can be considered in which 99 is removed, the anode 10' is grounded, and a substrate bias potential is applied to the anode 10''.

Conversely, even in the anode 10' shape shown in FIG. 10, there is a method in which the anode bias power supply 99 is removed, the anode 10' is grounded, and a substrate bias potential is applied to the substrate 101 as shown in FIG.

FIG. 12 shows a third embodiment of the present invention, and shows the most remarkable effect of the present invention.

In the embodiment shown in FIG. 12, two electromagnetic excitation coils 7 are wound concentrically around a planar magnetron electrode.
I am using one with 1.72. At the center of the inner coil 72 closer to the center, there is a central magnetic pole 3' made of a cylindrical soft magnetic material, and the inner coil 72
An annular magnetic pole 2' made of a soft magnetic material is placed between the outer coil 73 and the outer excitation coil 73.
An annular magnetic pole 62 also made of a soft magnetic material is arranged on the outside of the magnetic pole 1 . A current is passed through the inner coil 72, and the target is placed on one surface (lower side in the figure) 10
Adjust the excitation current of this inner coil so that the magnetic field component parallel to the target plane at a height of ~30 mm has a strength of about 200 Gauss.

When sputtering is performed using a conventional technique in this state, a plasma ring is generated on the radius of the annular magnetic pole 2' (below the target plate 1). Next, current is passed through the excitation coil 71 on the side in the opposite direction to that of the inner coil 72. As the magnetomotive force of the outer coil 71 increases, the radius of the plasma ring begins to decrease.If the ratio of the magnetomotive force of the inner and outer coils is about 2:1, the size of the plasma ring will be approximately equal to that of the central magnetic pole 3. ′ thickness. That is, the size of the plasma ring can be changed almost arbitrarily by adjusting the size of the outer coil current.

With such an electrode, for example, if film formation is performed while moving the position of the plasma ring, the area where the target material is consumed is not fixed or limited, which improves the utilization efficiency of the target material and results in good film formation. It has the advantage of being able to be controlled to obtain a film thickness distribution.

FIGS. 13 and 14 show the magnetic field distribution above the target 1 (downward in the figure) when the magnetomotive force of the outer coil is increased or decreased in the electrode shown in FIG. 12.
In FIGS. 13 and 14, the horizontal axis 1301 is the radius R above the target 1, and the vertical axis 1302 is the height above the target 1.

Figure 13 shows that the ratio of the magnetomotive force of the inner and outer coils is 18:
1. Figure 14 is from 18:10. 13th
A plasma ring is generated in a region 1305 surrounded by dotted lines in the figure and FIG.

When the plasma ring is contracted in the center as shown in Figure 14, the distribution of the plasma ring is
It extends upward from the target surface. For this reason, when the radius of the plasma ring is small, charged particles of the plasma may flow into the substrate. 1st
In the apparatus shown in Figure 2, the distance between the target surface and the substrate is 70 mm, the substrate is directly grounded, the target plate 1 has a diameter of 254 mm, and the argon pressure is
5.4mTorr, target electrical input 5KW, electromagnet 1
A curve 1510 shown in FIG. 15 is a curve 1510 shown in FIG. 15th
The vertical axis 1501 in the figure is the substrate inflow current Is, and the horizontal axis 1
502 indicates the radius R of the plasma ring. When the radius of the plasma ring is less than 60 mm, there is a current input approximately equal to the discharge current.

In this embodiment, which is a feature of the present invention, a current is passed through the electromagnet 111 provided outside the vacuum chamber, and when this electromagnet alone causes the vertical magnetic field component on the target surface to be approximately 40 Gauss, the substrate current with respect to the plasma ring radius R is The characteristics are curve 1520 in Figure 15.
It will be like this.

Plasma ring radius R when substrate bias power supply 203 is turned on and +10V substrate bias is applied
The characteristics of the current to the substrate Is are curve 1530 in Figure 15.
As a result, even if the plasma ring is moved during film formation, the substrate inflow current Is can be kept very small, and a deceleration potential of 10 V can be applied to the substrate even with the inflow of positive ions, which makes it possible to keep the substrate inflow current Is very small. The same good characteristics as the resistive vapor-deposited film were obtained with regard to damage in the sample.

As described above, according to the present invention, it is possible to prevent temperature rise of the substrate due to the inflow of negatively charged particles into the substrate to be film-formed, and damage to semiconductor elements, etc. due to the inflow of positively charged particles into the substrate to be film-formed. This has the effect that high quality semiconductor thin film integrated circuits and the like can be obtained.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view schematically showing a sputtering device using a conventional planar magnetron electrode, Fig. 2 is a diagram showing the substrate bias voltage-current characteristics in the sputtering device, and Fig. 3 explains the current components in Fig. 2. 7 is a sectional view of an experimental apparatus according to the present invention for discriminating the components of the substrate inflow current shown in FIG. 2, and FIG. 5 is a diagram showing the substrate bias current characteristics as the experimental results shown in FIG. 4. , FIG. 6 is a diagram showing the CV curve of the MOS capacitor obtained under the experimental conditions shown in FIG. 5, FIG. 7 is a diagram showing the first embodiment according to the present invention, and FIG. Figure 7 shows the electron flow suppression characteristics of the device; Figure 9 shows the CV curve of the MOS capacitor obtained under the experimental conditions in Figure 8;
FIG. 0 is a cross-sectional view showing a second embodiment of the present invention, FIG. 11 is a cross-sectional view of a modified example of the second embodiment of the present invention, and FIG. 12 is a cross-sectional view of a third embodiment of the present invention. Cross-sectional view showing the embodiment, Fig. 13 and Fig. 1
FIG. 4 is a diagram showing an example of the magnetic field characteristics obtained with the sputter electrode in the embodiment of FIG. 12, and FIG. 15 is a diagram showing the relationship between substrate inflow current and plasma ring radius in the embodiment of FIG. 12. . 1... Target board, 2, 3... Magnet, 6...
Magnetic coupling means, 20...high voltage constant current source, 23,
24...Evacuation means, 30...Shutter, 7
1, 72...Electromagnetic excitation coil, 102...Vacuum container, 111...Coil, 203...Low voltage power supply.

Claims (1)

[Claims] 1. A vacuum chamber for maintaining a vacuum atmosphere, a vacuum evacuation means for creating a vacuum atmosphere in the vacuum chamber, and a gas for introducing sputtering gas to set an arbitrary pressure. An introduction means, a first magnetic pole body provided at the center of the target and an annular second magnetic pole body provided around the target are installed, and a plate-like body is placed at the rear end of these magnetic pole bodies to generate magnetism. A planar magnetron type sputtering electrode having a magnetic flux generating means that is connected to the target plate and generates an annular tunnel-shaped magnetic flux on a target plate disposed at the tips of these magnetic pole bodies, and a substrate to be film-formed on which a film is formed using the sputtering electrode. a substrate holding means for holding the sputtering electrode so as to face the sputtering electrode at an appropriate distance; a potential applying means for applying a positive potential to the substrate holding means; and a potential applying means for generating a magnetic field perpendicular to the surface of the target plate. and a magnetic field generating means for separating the top of the tunnel-shaped magnetic flux from the substrate to be film-formed, and during film formation by sputtering on the substrate to be film-formed by the potential imparting means and the magnetic field generating means. ,
A planar magnetron sputtering device characterized by suppressing the amount of charged particles flowing into a substrate to be film-formed. 2. A vacuum chamber for maintaining a vacuum atmosphere, a vacuum evacuation means for creating a vacuum atmosphere in the vacuum chamber, a gas introduction means for introducing sputtering gas and setting it to an arbitrary pressure, and a A first magnetic pole body provided at the center and an annular second magnetic pole body provided around it are installed, and a plate-shaped body is placed at the rear end of these magnetic pole bodies to magnetically connect them. A planar magnetron type sputtering electrode having a magnetic flux generating means for generating an annular tunnel-shaped magnetic flux on a target plate disposed at the tip of a magnetic pole body, and a substrate to be deposited on which a film is to be formed by the sputtering electrode are attached to the sputtering electrode. a cylindrical metal member installed to surround a space from the periphery of the target flat plate to the periphery of the substrate to be film-formed; The method further comprises: a potential applying means for applying a potential to a member; and a magnetic field generating means for generating a magnetic field perpendicular to the surface of the target flat plate to separate the top of the tunnel-shaped magnetic flux from the substrate to be film-formed; A planar magnetron sputtering apparatus characterized by suppressing the amount of charged particles flowing into a substrate to be film-formed during film formation by sputtering on the substrate to be film-formed by using a potential imparting means and a magnetic field generating means. .