JPS61270653A - Ion selective field effect transistor electrode - Google Patents
Ion selective field effect transistor electrodeInfo
- Publication number
- JPS61270653A JPS61270653A JP60111875A JP11187585A JPS61270653A JP S61270653 A JPS61270653 A JP S61270653A JP 60111875 A JP60111875 A JP 60111875A JP 11187585 A JP11187585 A JP 11187585A JP S61270653 A JPS61270653 A JP S61270653A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen ion
- effect transistor
- isfet
- field effect
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 8
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000012528 membrane Substances 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 229920000620 organic polymer Polymers 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 9
- 238000001139 pH measurement Methods 0.000 abstract description 7
- -1 hexafluorophosphate salt Chemical class 0.000 abstract description 4
- 239000004014 plasticizer Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000003792 electrolyte Substances 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- 239000012876 carrier material Substances 0.000 abstract 2
- 229920006254 polymer film Polymers 0.000 abstract 2
- 229920000915 polyvinyl chloride Polymers 0.000 abstract 1
- 239000004800 polyvinyl chloride Substances 0.000 abstract 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M sodium chloride Inorganic materials [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 208000003028 Stuttering Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940075397 calomel Drugs 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GTKRFUAGOKINCA-UHFFFAOYSA-M chlorosilver;silver Chemical compound [Ag].[Ag]Cl GTKRFUAGOKINCA-UHFFFAOYSA-M 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- MIMDHDXOBDPUQW-UHFFFAOYSA-N dioctyl decanedioate Chemical compound CCCCCCCCOC(=O)CCCCCCCCC(=O)OCCCCCCCC MIMDHDXOBDPUQW-UHFFFAOYSA-N 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 230000000366 juvenile effect Effects 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はイオン選択性霜界幼果トランジスター（υ下、
ｌ５ＦＥＴという）電極、す１に詳細には、水累イオン
感応膜としてニュートラルキャリヤー膜を用いたＩＳＦ
”ＥＴ電極に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an ion-selective frost field juvenile transistor (υ lower,
In detail, ISF using a neutral carrier film as a water accumulated ion sensitive film.
``Regarding ET electrodes.
最近、化学センサーと半導体デバイスを集積化した化学
的半導体デ、２イスが種々開発されている。Recently, various chemical semiconductor devices that integrate chemical sensors and semiconductor devices have been developed.
而して、ｌ５ＦＥＴは斯かる化学的半導体デバイスの一
種であって、ＭＯ８１［界効果トランジスター（ＭＯＳ
ＦＥＴ ）とイオン選択性電極ヲ組み合せて集積化した
ものであり、従来のイオンセンサーとは全く異なる新し
いタイゾのセンサーである。このｌ５ＦＥＴは、極めて
小型化することができること、並びにＭＯ８ＦＥＴ本来
の高入力インピーダンス、低ノイズ等の優れた特性分有
すること、更に応答時間が短かいこと等、潰れたセンザ
ー特性を有するため注目されている。Therefore, 15FET is a type of such chemical semiconductor device, and is MO81 [field effect transistor (MOS)].
It is a new Taizo sensor that is completely different from conventional ion sensors. This 15FET has attracted attention because it can be extremely miniaturized, has excellent characteristics such as high input impedance and low noise inherent to MO8FET, and has excellent sensor characteristics such as short response time. There is.
然しなから、このよりなｌ５ＦＥＴにおいて、ｐＨ測定
用のものとＥ７ては、 備かに水素イオン感応膜として
５ｉＯｓ、８１ｓＮ４％ Ａｌｚｏｓ、Ｔ１１１０Ｍ
’に：用いたものが知られているに過ぎない。しかも
、水素イオン感応膜としてＳｈａｍを使用した吃のは、
一般に動作が不安定で実用性に乏しいものであり、 良
好なｐＨ応答を示し、かつアルカリ金楓イオン等の他イ
オンの妨害が少ない等、 ｐ１１測定用のｌ５ＦＥＴの
水素イオン感応膜として好適なものは、ＡＩＩｚＯｓや
’ｐ ａ２０Ｓ の如き化学的に安定な化合物の膜に
限られていた。However, in this standard 15FET, the one for pH measurement and the E7 are made of 5iOs, 81sN4% Alzos, T1110M as a hydrogen ion sensitive membrane.
'to: Only what is used is known. Moreover, the stuttering using Sham as a hydrogen ion sensitive membrane,
In general, the operation is unstable and impractical, but it is suitable as a hydrogen ion sensitive membrane for l5FET for p11 measurement because it shows good pH response and has little interference from other ions such as alkali gold maple ions. has been limited to films of chemically stable compounds such as AIIzOs and 'p a20S.
斯かる夾状において、本発明者はｐＨ測定用のＴＳＦＥ
Ｔの水素イオン感応膜として好適な化合物を絞量探索１
〜た結果、水素イオン感応膜と【７て水素イオンキャリ
ヤー物質を含有する有機高分子膜を使用すれば、優れ次
センサー特性を有するｌ５ＦＥＴ電極が得られることを
見出し、本発明を完成した。In such a situation, the present inventor has developed a TSFE for pH measurement.
Narrowing down the search for suitable compounds as hydrogen ion sensitive membranes for T
As a result, the present inventors have discovered that by using a hydrogen ion sensitive membrane and an organic polymer membrane containing a hydrogen ion carrier substance, a 15 FET electrode with excellent sensor properties can be obtained, and the present invention has been completed.
すなわち本発明は、ＭＯＳ ＦＥＴゲート絶縁膜上に水
素イオンキャリヤー物質全含有する有機高分子膜よりな
る水素イオン感応膜を被着したイオン選択性電界効果ト
ランジスター電極（ｉ７提供するものである。That is, the present invention provides an ion-selective field effect transistor electrode (i7) in which a hydrogen ion sensitive film made of an organic polymer film containing a hydrogen ion carrier substance is deposited on a MOS FET gate insulating film.
本発明において使用きれるＭＯＳＦＥＴとしては、公知
のｌ５ＦＥＴに使用されるものであればいずれを４使用
することができ〔松尾、江刺［電気化学と工業物理化学
Ｊ５０．６４（１９８２）］、例えばｐ型ウェハー上に
作られた５ｉ−ｓｉｏ、ゲート絶縁膜構造のものが挙け
られる。水素イオン感応膜は、ゲート絶縁膜に面接被着
することもできるが、チャンネル金測定用溶液の浸入か
ら保護するために例えばＳｉＯ！ゲート絶縁膜をＳｉ、
Ｎ４ 膜で榎ってから被着するのが好ましい。As the MOSFET that can be used in the present invention, any MOSFET that can be used in the known 15FET can be used [Matsuo, Esashi [Electrochemistry and Industrial Physical Chemistry J50.64 (1982)], for example, p-type Examples include 5i-sio, which is made on a wafer, and a gate insulating film structure. The hydrogen ion sensitive membrane can be surface deposited on the gate insulating membrane, but to protect the channel from infiltration of the gold measurement solution, for example SiO! The gate insulating film is Si,
It is preferable to cover it with an N4 film before depositing it.
水素イオン感応膜としては、水素イオンキャリヤー奮含
有する有機高分子膜が使用される。水素イオンキャリヤ
ー物質としては、例えばアミン類のものが好適に使用さ
れ、例えば次式
（式中、Ｒ１、Ｒ１およびＲ１は同一もしくは異なって
アルキル基を示し、そのうち少ηくとも２つは炭素数８
〜１８のアルキル基好せしくは炭素数１０〜１６のアル
キル基を示す）、または式
（式中、 Ｒ４は炭素数８〜１８のアルキル基、好まし
くは炭素数１０〜１６のアルキル基）で表わされるもの
が挙げられる。As the hydrogen ion sensitive membrane, an organic polymer membrane containing hydrogen ion carriers is used. As the hydrogen ion carrier substance, for example, amines are suitably used. 8
~18 alkyl group, preferably an alkyl group having 10 to 16 carbon atoms), or (wherein R4 is an alkyl group having 8 to 18 carbon atoms, preferably an alkyl group having 10 to 16 carbon atoms) Examples include things that are expressed.
有機高分子化合物としては、例えば塩化ビニル樹脂、破
りウレタン樹脂、シリコーン樹脂、感光樹脂（フォトレ
ゾスト）尋が挙けられ、口■塑剤が溶出しにくいものが
好適である。Examples of organic polymer compounds include vinyl chloride resins, broken urethane resins, silicone resins, and photoresist resins, and those from which plasticizers do not easily elute are preferred.
好捷しい可塑剤としＣは、例えばセ、Ｓシン酸ゾオクチ
ルエステル、アゾピン酸ゾオクチル、リン酸エステル等
が挙けられる。更に、該水素イオン感応膜には電解質塩
を含有せしめるのが好ましく、例えばカリウムテトラキ
ス（１）−クロロフェニル）ボレート、テトラアルキル
アンモニウムのテトラフロロボレート塩やヘキサフロロ
ホスフェート塩等が使゛用される。Preferred plasticizers C include, for example, zooctyl se, s-sinate, zooctyl azopic acid, and phosphoric acid esters. Furthermore, it is preferable that the hydrogen ion sensitive membrane contains an electrolyte salt, such as potassium tetrakis(1)-chlorophenyl)borate, tetrafluoroborate salt of tetraalkylammonium, hexafluorophosphate salt, and the like.
このような水素感応膜をゲート絶縁膜上に被着するには
、水素イオン感応膜組成物を適当な溶剤、例えばテトラ
ヒドロフラン、シクロヘキサノン、トルエン、ジメチル
ホルムアミド等に溶解したものにＡ４０ＳＦＥＴを浸漬
後乾燥する方法、あるいは該溶液をゲート絶縁膜上に塗
布後乾燥する方法等を用いることができる。松看する水
素イオン感応膜の膜厚は、１μ尻〜１０ａｌｌとするの
が好ましい。１ μだより小さい場合には、ｌ５ＦＥＴ
のｐＨ応答が不安定になり、また１０ｕより大きい場合
にはｐＨ応答を示さなくなり好ましくない。To deposit such a hydrogen-sensitive film on the gate insulating film, the A40SFET is immersed in a hydrogen ion-sensitive film composition dissolved in a suitable solvent such as tetrahydrofuran, cyclohexanone, toluene, dimethylformamide, etc., and then dried. method, or a method in which the solution is applied onto the gate insulating film and then dried. The thickness of the hydrogen ion sensitive membrane is preferably about 1 μm to 10 μm. If it is smaller than 1μ, then l5FET
The pH response becomes unstable, and if it is larger than 10 u, no pH response is shown, which is not preferable.
紙上の如くして得られる本発明のＩ Ｓ ＦＥＴにより
、測定用溶液のｐｆ（を測定するには、第３図に示すよ
うに、檜２１中に測定用浴液２９金入れ、この溶液に本
発明のｌ５ＦＥＴの水素イオン感応膜２２および参照ｉ
！極２６としての銀−塩化銀電極、カロメルｉｌｌ他尋
を浸漬する。そして参照１１極２６に対するＩ ５ＦＥ
Ｔのソースホロワ回路２３の出力電圧Ｖ ｏｕｔを電位
差ｔｉで測定する。このとき測定用溶液２９全攪拌機２
８で攪拌するとよい。そして、予め作成しておいたＶｏ
ｕｔとｐＨの相関図から測定用溶液のｐＨを読み取る。To measure the pf of a measuring solution using the I S FET of the present invention obtained as shown in the paper, as shown in FIG. Hydrogen ion sensitive membrane 22 of l5FET of the present invention and reference i
! A silver-silver chloride electrode as a pole 26, a calomel plate, etc. are immersed. and I 5FE for reference 11 pole 26
The output voltage V out of the source follower circuit 23 of T is measured by the potential difference ti. At this time, measurement solution 29 total stirrer 2
It is recommended to stir at 8. Then, the Vo created in advance
Read the pH of the measurement solution from the correlation diagram between ut and pH.
本発明のｌ５ＦＫＴ電極は、紙上の如く、水素イオン感
応膜としてニュートラルキャリヤー物質を含有する有機
高分子膜を使用したものであって、＊ｔｘｏｓ％Ｔａ１
Ｏ＠の如き化学的に安定な膜を使用した従来品と同等の
センサー特性を有し、高速かつ安定なｐＨ測定を可能に
するものである。As described in the paper, the 15FKT electrode of the present invention uses an organic polymer membrane containing a neutral carrier substance as a hydrogen ion-sensitive membrane, and has *txos%Ta1
It has the same sensor characteristics as conventional products using chemically stable membranes such as O@, and enables high-speed and stable pH measurement.
次に実施例を挙けて本発明を説明する。 Next, the present invention will be explained with reference to Examples.
実施例１
次の方法によりＭＯＳＦＥＴのゲート絶縁膜上に７に素
イオン感応膜を被着し、ｌ５ＦＥＴ！極を作製した。そ
の模式図を第１図に示す。Example 1 An elementary ion sensitive film was deposited on the gate insulating film of a MOSFET by the following method, and an 15FET! A pole was made. A schematic diagram thereof is shown in FIG.
（１）ＭＯＳＦＥＴ
水素イオン感応膜全被着するためのＭＯＳＦＥＴとして
は、針状構造で、ｐ形つェハー上に作られた８３−８ｉ
ｌｌゲート絶縁膜構造を有するものを使用した。(1) MOSFET The MOSFET for fully depositing the hydrogen ion sensitive film has a needle-like structure and is made on a p-type wafer.
ll gate insulating film structure was used.
（ｉ） 水素イオン感応膜の被着
ＭＯ８ＦＥＴのＳｔＯ！ゲート絶ｆ＃、膜上にトリーｎ
−ドデシルアミンを含有する下記組成のニュートラルキ
ャリヤー膜を被着した。なお、） ＩＪ −ｎ−ドデシ
ルアミン（東京化成製）は、５１１１）（ｆ 減圧下
でオイルパスにより２２０〜２３０℃に保ち２回蒸留し
たものを使用した。(i) StO of MO8FET with hydrogen ion sensitive membrane deposited! gate off f#, tree n on the membrane
A neutral carrier film containing dodecylamine and having the following composition was deposited. The IJ-n-dodecylamine (manufactured by Tokyo Kasei) was distilled twice under reduced pressure at 220 to 230° C. using an oil path.
ジオクチルセバケート（東京化成！り及びカリウムテト
ラキス−ｐ−クロロフェニルｌレート（Ｋ−ＴＣＰＢ、
和光紬薬ｊＭ）は、市販品をそのまま使用し７た。破り
ビニルクロライド（ＰＶＣ）は平均重合分子数１１００
のものをテトラヒドロフラン（Ｔ ＨＦ ）に溶解させ
、メタノール中に滴下し、再沈澱させたものを乾燥して
から使用した。Dioctyl sebacate (Tokyo Kasei!) and potassium tetrakis-p-chlorophenyl late (K-TCPB,
Wako Tsumugi jM) was used as a commercially available product. Broken vinyl chloride (PVC) has an average number of polymer molecules of 1100.
The solution was dissolved in tetrahydrofuran (THF), dropped into methanol, reprecipitated, and dried before use.
下記組成のニュートラルキャリヤー膜は、この組成物の
Ｔ ＨＦ浴液をＳ ｆ Ｏ！ゲート絶縁膜にのせた後、
風乾によって溶媒を蒸発させることにより形成させた。A neutral carrier film having the following composition can be prepared by using a THF bath solution of this composition as S f O! After placing it on the gate insulating film,
It was formed by evaporating the solvent by air drying.
斯くして水素イオン感応膜の厚さが０．２５１１３１．
０．４５ｕ、 １．０鶴のｌ５ＦＥＴを作製した。なお
、膜厚はノギスで針側［７た。Thus, the thickness of the hydrogen ion sensitive membrane is 0.251131.
A 15FET of 0.45u and 1.0u was fabricated. The film thickness was measured on the needle side [7] using a vernier caliper.
ニュートラルキャリヤー膜組成ニ
トリーｎ−ドデシルアミン ２．３重量優ゾオクチル
セバケ〜） （可塑剤） ６４．８に−ＴＣＰＢ
Ｏ，５？リビニルクロライド（ＰＶ
Ｃ） ３２．４実施例２
実施例１で得たｌ５ＦＥＴのセンザー特性を第２図に示
すセルを構成して調べた。水素イオン感応膜の界面電位
の変化は、セルにより利得ＯｄＢのソースホロワ回路を
組み、ソース電圧（Ｖｏｕｔ ）を測定することにより
行なっ次。ｖｏｕｔはデシタルマルチメーターＴＲ６８
４１（タケダ埋研製）により測定した。Neutral carrier film composition: Nitri-n-dodecylamine (2.3% by weight) (Plasticizer) 64.8-TCPB
O, 5? ribinyl chloride (PV)
C) 32.4 Example 2 The sensor characteristics of the 15FET obtained in Example 1 were investigated by constructing a cell shown in FIG. 2. Changes in the interfacial potential of the hydrogen ion sensitive membrane were performed by constructing a source follower circuit with a gain of OdB using cells and measuring the source voltage (Vout). vout is a digital multimeter TR68
41 (manufactured by Takeda Uken).
なお、参照′＃Ｌ極としては、塩化ナトリウム飽和カロ
メル電極（ＳＳＣＥ）を用いた。Note that a sodium chloride saturated calomel electrode (SSCE) was used as the reference '#L electrode.
また、ｐＨ測定用溶液は、 デシタルｐＨミリゼルトメ
ーター（オリオン・リサーチ社製８０１型）、ガラス電
極及び５ＳＣＥを用いて１Ｍ塩化ナトリウム水浴液中に
水酸化ナトリウム若しくは塩酸溶液を滴下して任意のｐ
Ｈ値に詞製したものを使用した。測定は、２８℃におい
て、測定用溶液をマグネチツクスターラーで攪拌しなが
ら空気飽和状態で光強度一定のもとで行なった。In addition, the solution for pH measurement can be obtained by dropping sodium hydroxide or hydrochloric acid solution into a 1M sodium chloride water bath using a Digital pH Milliseltmeter (Model 801 manufactured by Orion Research), a glass electrode, and a 5SCE. p
The H value was used. The measurement was carried out at 28° C. while stirring the measurement solution with a magnetic stirrer, in an air-saturated state, and under constant light intensity.
第３図はニュートラルキャリヤー膜を被着する前のＭＯ
ＳＦＥＴ 、すなわち５ＩＯｓゲート絶縁膜が直接測定
用溶液に触れる状態で測定し７ｔＶｏｕｔのｐＨに対す
るプロットである。第３図から明らかな如（、Ｖｏｕｔ
はｐＨに対し直線関係がなく、また動作も不安定でセン
サーとして使用しつるものではなかった。Figure 3 shows the MO before applying the neutral carrier film.
This is a plot of 7tVout versus pH measured with the SFET, ie, 5IOs gate insulating film, directly in contact with the measurement solution. As is clear from Figure 3 (, Vout
There was no linear relationship with pH, and the operation was unstable, making it difficult to use as a sensor.
一方、第４図に示す如く、本発明のニュートラルキャリ
ヤー膜を被層（〜たＩＳＦ’ＥＴ（膜厚０．４５！ＩＩ
）では、ｐＨにＸｊするＶｏｕｔのプロットの直線性は
極めて良好であり、しかも再埃性のよい↓ｒり答が得ら
れた。On the other hand, as shown in FIG.
), the linearity of the plot of Vout vs.
舊た、この膜厚でのｌ５ＦＥＴの１ｒ、、答速度及びＶ
ｏｕｔの軒時安定性を調べた結果の一例を第５図にボす
。これはオープン状幅からＩＭＮａＣＩ −ＮａＯＨ水
浴液（ｐＨ９，１８）に移したときの応答である。この
図に水式れるように９５％応答時間け０４１秒以下であ
り極めて短く、また経時変化もほとんどみられなかつ友
（第６図）。1r, response speed and V of 15FET with this film thickness
Figure 5 shows an example of the results of investigating the eave stability of out. This is the response when transferred from the open width to the IMNaCI-NaOH water bath solution (pH 9, 18). As shown in this figure, the 95% response time is extremely short, less than 0.41 seconds, and there is almost no change over time (Figure 6).
なお、ニュートラルキャリヤー膜の厚さが１５１ｕＯも
のでは、ＶｏｕｔのｐＨ依存性は全く見られなかった。In addition, when the thickness of the neutral carrier film was 151 μO, no pH dependence of Vout was observed at all.
第１図は実り例１で作表されたＩＳＦ”ＥＴ電極の概略
図、第２図は本発明１ｓＦＥＴ１４ｉ、極によるｐＨ測
定方法を示す概略図、第３図はニュートラルギヤリヤー
膜を被着しないＭＯＳ ＦＥ Ｔ電極を用いてｐＨ測定
を行なったときのソース屯田のｐＨに対する１０ツトヲ
・示す図面、第４図は、実施例１で作製妊れたｌ５ＩＴ
’屯（傘（膜Ｊ’Ｊｔ ０．４５１１１ ） ｋ用イテ
ｐＨ（ｔ１ｇ定を行ナッたときのソース′亀圧のｐＨに
対するゾロツト全示す図面、第５図及び第６図は同ｌ５
ＦＥＴ亜極をオーシン状幅からｐＨ９，１８の溶液に浸
漬したときの電位応答ケ示す図面である。
以上
第３図
３ ４ ｂ ｂ ／
ｄ ！ ＩＩＪＨ
第４図Figure 1 is a schematic diagram of the ISF"ET electrode plotted in Example 1, Figure 2 is a schematic diagram of the 1sFET14i of the present invention, and a schematic diagram showing the pH measurement method using the electrode. Figure 3 is a diagram without a neutral gear film attached. Figure 4 shows the 10 points of the pH of the source when measuring the pH using a MOS FET T electrode.
'Tun (Umbrella (Membrane J'Jt 0.45111) Figure 5 and Figure 6 are the same 15
FIG. 2 is a drawing showing the potential response when the FET sub-electrode is immersed in a solution with pH 9.18 from an ossin-like width. Above is Figure 3 4 b b /
d! IIJH Figure 4
Claims (1)
水素イオンキャリヤー物質を含有する有機高分子膜より
なる水素イオン感応膜を被着したことを特徴とするイオ
ン選択性電界効果トランジスター電極。 ２、水素イオンキャリヤー物質が次式 ▲数式、化学式、表等があります▼ （式中、Ｒ＾１、Ｒ＾２およびＲ＾３は同一もしくは異
なつてアルキル基を示し、そのうち少なくとも２つは炭
素数８〜１８のアルキル基を示す）で表わされる化合物
である特許請求の範囲第１項記載のイオン選択性電界効
果トランジスター電極。 ３、水素イオン感応膜が膜厚１μｍ〜１０ｍｍのもので
ある特許請求の範囲第１項または第２項記載のイオン選
択性電界効果トランジスター電極。[Claims] 1. An ion-selective field effect transistor characterized in that a hydrogen ion sensitive film made of an organic polymer film containing a hydrogen ion carrier substance is deposited on a gate insulating film of a MOS field effect transistor. electrode. 2. The hydrogen ion carrier substance has the following formula ▲ Numerical formula, chemical formula, table, etc. ▼ (In the formula, R^1, R^2 and R^3 are the same or different and represent an alkyl group, at least two of which are carbon The ion-selective field-effect transistor electrode according to claim 1, which is a compound represented by the following formula (representing an alkyl group of numbers 8 to 18). 3. The ion-selective field effect transistor electrode according to claim 1 or 2, wherein the hydrogen ion-sensitive membrane has a thickness of 1 μm to 10 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60111875A JPS61270653A (en) | 1985-05-24 | 1985-05-24 | Ion selective field effect transistor electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60111875A JPS61270653A (en) | 1985-05-24 | 1985-05-24 | Ion selective field effect transistor electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61270653A true JPS61270653A (en) | 1986-11-29 |
Family
ID=14572344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60111875A Pending JPS61270653A (en) | 1985-05-24 | 1985-05-24 | Ion selective field effect transistor electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61270653A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012163531A (en) * | 2011-02-09 | 2012-08-30 | Yokogawa Electric Corp | pH SENSOR AND pH MEASURING METHOD |
| US8809916B2 (en) | 2011-02-09 | 2014-08-19 | Yokogawa Electric Corporation | pH sensor, pH measurement method, ion sensor, and ion concentration measurement method |
-
1985
- 1985-05-24 JP JP60111875A patent/JPS61270653A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012163531A (en) * | 2011-02-09 | 2012-08-30 | Yokogawa Electric Corp | pH SENSOR AND pH MEASURING METHOD |
| US8809916B2 (en) | 2011-02-09 | 2014-08-19 | Yokogawa Electric Corporation | pH sensor, pH measurement method, ion sensor, and ion concentration measurement method |
| US9267913B2 (en) | 2011-02-09 | 2016-02-23 | Yokogawa Electric Corporation | PH sensor, pH measurement method, ion sensor, and ion concentration measurement method |
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