JPS61253836A - Harmetic seal - Google Patents
Harmetic sealInfo
- Publication number
- JPS61253836A JPS61253836A JP60095456A JP9545685A JPS61253836A JP S61253836 A JPS61253836 A JP S61253836A JP 60095456 A JP60095456 A JP 60095456A JP 9545685 A JP9545685 A JP 9545685A JP S61253836 A JPS61253836 A JP S61253836A
- Authority
- JP
- Japan
- Prior art keywords
- stem
- present
- seal
- cap
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はＩＣトランジスタあるいは弾性表面波素子等の
デバイスにおいて、ステム、キャップを封止するハーメ
チックシールに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a hermetic seal for sealing a stem and a cap in a device such as an IC transistor or a surface acoustic wave element.
従来のハーメチックシール用ステム、キャップにおいて
は、特開昭５９−２１４号公報に記載のように、そのメ
ッキは、価格、製造面でＮｉとするのが通例であった。In conventional hermetic seal stems and caps, as described in Japanese Unexamined Patent Publication No. 59-214, the plating thereof has generally been Ni due to cost and manufacturing considerations.
しかしハーメチックシール性については配慮されていな
かった。However, no consideration was given to hermetic sealing properties.
本発明の目的は、ステム、キャップからなるハーメチッ
クシールにおいて、安定した条件でリーク、はがれ、あ
るいはスパッタ（熔接飛び）。The purpose of the present invention is to prevent leakage, peeling, or spatter (welding skipping) in a hermetic seal consisting of a stem and a cap under stable conditions.
不良等のないシール方法を提供することにある。The object of the present invention is to provide a sealing method that is free from defects.
従来のステム、キャップからなるハーメチックシールに
おいては、ステム、キャップの熔要部分のメッキをＮｉ
としていた。ところが、本作業では電流、加圧力あるい
は電極形状を高頻度で厳しく管理（あるいは適切条件出
し）しなげればならない。本発明はシール作業性を向上
させる目的で、熔着部分のメッキ金ＭＫつき、Ｎｉに代
わるものとしてＡ！＆メッキを施すようにしたものであ
る。In conventional hermetic seals consisting of a stem and a cap, the plating of the welding parts of the stem and cap is done using Ni.
It was. However, in this work, the current, pressure, or electrode shape must be frequently and strictly controlled (or appropriate conditions must be established). In the present invention, for the purpose of improving sealing workability, the welded part is plated with gold MK, and A! is used as an alternative to Ni. & It is plated.
以下、本発明の一実施例を第１〜第５図により説明する
。An embodiment of the present invention will be described below with reference to FIGS. 1 to 5.
ステムとキャップなハーメチックシールする際の熔着部
分を第１図Ａ部に示した。通常これにより封入されたデ
バイスは微細電極を形成したチップ５と配線用ワイヤ４
から成る。Part A of Figure 1 shows the welded part for hermetically sealing the stem and cap. Usually, the encapsulated device consists of a chip 5 on which fine electrodes are formed and a wiring wire 4.
Consists of.
ステム１の熔着部分に関し、本発明の実施例。An embodiment of the present invention regarding the welded portion of the stem 1.
を以下説明する。従来は第２図に示した如く、ステムの
表面にはＮｉメッキを施していた。本発明ではこの部分
にのみ、Ａｕメッキを施す。ＡｔＬメッキ厚は０．０５
μｍ以上が適当である。両者につき同一条件でハーメチ
ックシール性を検討した結。will be explained below. Conventionally, as shown in FIG. 2, the surface of the stem was plated with Ni. In the present invention, Au plating is applied only to this portion. AtL plating thickness is 0.05
A value of μm or more is appropriate. The results of examining the hermetic sealing properties of both under the same conditions.
果を第４図および第５図に示した。本発明品の熔接条件
を第４図に、従来品のそれを図５に示した（溶接良好な
範囲にハツチングを施した。）。The results are shown in Figures 4 and 5. The welding conditions for the product of the present invention are shown in FIG. 4, and those for the conventional product are shown in FIG. 5 (the range of good welding is hatched).
図から明らかなように、本発明方法によれば、溶接良好
範囲が、従来品に比べ２．５倍程度広げられることが判
る。As is clear from the figure, according to the method of the present invention, the range of good welding is expanded by about 2.5 times compared to the conventional product.
本発明によれば、安定かつ広範囲な熔接条件でステムと
キャップのハーメチックシールが可能となるので量産性
および作業性が向上するという効果がある。According to the present invention, it is possible to hermetically seal the stem and the cap under a stable and wide range of welding conditions, thereby improving mass productivity and workability.
第１図は本発明の一実施例のステムとキヤ。
猶１日
ブをハーメチックシールしたデバイスの断面図、第２．
第５図は第１図中のＡ部拡大図、第４図は本発明の溶接
条件、熔接条件中の大きな要因。
である加圧力、電流に対する熔接条件を示した説明図、
第５図は従来品の熔接条件の説明図である。
１・・・ステム
２・・・キャップ
３・・・チップ
４・・・ワイヤ
５・・・Ｎｉメッキ
ロ・・・Ａｕメッキ
第４図
ｆ）ｏルｆＪ（ｋう）
第３０
η０圧々 （Ｋシ）FIG. 1 shows a stem and a gear according to an embodiment of the present invention. Cross-sectional view of the device hermetically sealed for 1 day, 2nd.
Fig. 5 is an enlarged view of part A in Fig. 1, and Fig. 4 shows the welding conditions of the present invention and major factors in the welding conditions. An explanatory diagram showing the welding conditions for the applied force and current,
FIG. 5 is an explanatory diagram of welding conditions for a conventional product. 1...Stem 2...Cap 3...Tip 4...Wire 5...Ni plating...Au plating C)
Claims (1)
より気密封止するシールにおぃて、そのステムとキャッ
プの熔着部分にのみ、あらかじめ０．０５μｍ以上のＡ
ｕメッキを施したことを特徴とするハーメチックシール
。1. In the seal that hermetically seals the metal package stem and cap by resistance heating, apply an A of 0.05 μm or more only to the welded part of the stem and cap in advance.
A hermetic seal characterized by U plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095456A JPS61253836A (en) | 1985-05-07 | 1985-05-07 | Harmetic seal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095456A JPS61253836A (en) | 1985-05-07 | 1985-05-07 | Harmetic seal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61253836A true JPS61253836A (en) | 1986-11-11 |
Family
ID=14138182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60095456A Pending JPS61253836A (en) | 1985-05-07 | 1985-05-07 | Harmetic seal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61253836A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173331B2 (en) | 2003-02-06 | 2007-02-06 | Neomax Materials Co., Ltd. | Hermetic sealing cap and method of manufacturing the same |
-
1985
- 1985-05-07 JP JP60095456A patent/JPS61253836A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173331B2 (en) | 2003-02-06 | 2007-02-06 | Neomax Materials Co., Ltd. | Hermetic sealing cap and method of manufacturing the same |
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