JPS61230346A - Cooling device for semiconductor element - Google Patents
Cooling device for semiconductor elementInfo
- Publication number
- JPS61230346A JPS61230346A JP60071805A JP7180585A JPS61230346A JP S61230346 A JPS61230346 A JP S61230346A JP 60071805 A JP60071805 A JP 60071805A JP 7180585 A JP7180585 A JP 7180585A JP S61230346 A JPS61230346 A JP S61230346A
- Authority
- JP
- Japan
- Prior art keywords
- water
- semiconductor element
- cooling
- cooling block
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000012777 electrically insulating material Substances 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 239000011810 insulating material Substances 0.000 abstract 1
- 210000002445 nipple Anatomy 0.000 description 5
- 206010014357 Electric shock Diseases 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体素子において用いる冷却装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cooling device used in a semiconductor device.
一般に電気機器、とくにダイオード、サイリスク、トラ
ンジスタ等の半導体素子は温度の変化によってその特性
が変化しやすいばかりでなく、放熱するための環境が悪
い場合には局部発熱によって破損する危険もある。この
ような理由によって従来から金種々の冷却装置が考えら
れてきた。In general, electrical equipment, especially semiconductor elements such as diodes, silices, and transistors, are not only susceptible to changes in their characteristics due to changes in temperature, but also have the risk of being damaged by local heat generation if the environment for heat dissipation is poor. For these reasons, various types of cooling devices have been considered.
従来の半導体素子冷却装置の例を第２図に示す。An example of a conventional semiconductor device cooling device is shown in FIG.
図において１は半導体素子、２は一対の電流端子、３は
銅等の熱伝導性良好な金属カミらなる水冷ブロックであ
り、４はその内部に設けられた水路である。５は水冷ブ
ロック３にねじ込み又はろう付により取付けられた金属
から成るホースニップルである。該ホースニップル５は
配管ホース６により上記水冷ブロックに連結されており
、この配管ホース６および水路４には図示の矢印方向に
水が流れるようになっている。また７は水冷ブロック３
、電流端子２、半導体素子ｌを挟んでいる絶縁座である
。In the figure, 1 is a semiconductor element, 2 is a pair of current terminals, 3 is a water cooling block made of a metal with good thermal conductivity such as copper, and 4 is a water channel provided inside the block. Reference numeral 5 denotes a metal hose nipple attached to the water cooling block 3 by screwing or brazing. The hose nipple 5 is connected to the water cooling block by a piping hose 6, and water flows through the piping hose 6 and the water channel 4 in the direction of the arrow shown. Also, 7 is water cooling block 3
, the current terminal 2, and the insulating seat sandwiching the semiconductor element l.
次に動作について説明する。Next, the operation will be explained.
半導体素子１において発生した熱は水冷ブロック３に伝
わり水に伝達され、該水に吸収され、該水が外部へ循環
することにより、上記半導体素子１は冷却される。また
該半導体素子ｌは上記絶縁座７により図示していない外
部圧接構造部と電気的に絶縁されている。The heat generated in the semiconductor element 1 is transmitted to the water cooling block 3, transferred to water, absorbed by the water, and circulated to the outside, thereby cooling the semiconductor element 1. Further, the semiconductor element 1 is electrically insulated from an external press-contacting structure (not shown) by the insulating seat 7.
従来の半導体素子冷却装置は以上のように構成されてお
り、半導体素子の両端に係る電圧がそのまま配管ホース
６、ホースニ・ノプル５、および水冷ブロック３の内部
の水に印加されるため水の抵抗値が低いと多大のもれ電
流が水経路を流れ、特に直流電流がかかればホースニ・
ノプル５が電流腐食により一溶解、損耗し、水冷ブロッ
ク３が短期間で使用不可能となる。また人がこの冷却装
置より排出された水を離れた場所で使用した場合、感電
の恐れすら生じ危険である。これらを防止するためには
水の抵抗値を高くすること、あるいは水質の管理をする
ことが考えられるが、これらは容易でない。The conventional semiconductor device cooling device is configured as described above, and the voltage applied to both ends of the semiconductor device is directly applied to the water inside the piping hose 6, the hose nozzle 5, and the water cooling block 3, so that the resistance of the water is reduced. If the value is low, a large amount of leakage current will flow through the water path, especially if DC current is applied.
The nozzle 5 is melted and worn out due to current corrosion, and the water cooling block 3 becomes unusable in a short period of time. Furthermore, if a person uses the water discharged from this cooling device in a remote location, there is a risk of electric shock, which is dangerous. In order to prevent these problems, it is possible to increase the water resistance value or to control the water quality, but these are not easy to do.
この発明は、かかる問題点を解決するためにな置を提供
することを目的とする。The present invention aims to provide a solution to such problems.
この発明に係る半導体素子冷却装置番よ、半導体素子を
挟持し冷却する水冷ブロックとして熱伝導性の良好な電
気絶縁材料を用いたものである。In the semiconductor device cooling device according to the present invention, an electrically insulating material with good thermal conductivity is used as a water cooling block for sandwiching and cooling a semiconductor device.
この発明においては、電気絶縁材料からなる水冷ブロッ
クを採用したから、水経路が電気回路と完全に絶縁され
、その結果、水質が悪化していて水の抵抗値が低くても
、感電の恐れはなく、また、電流腐食などは発生しない
。In this invention, since a water cooling block made of electrically insulating material is used, the water path is completely insulated from the electrical circuit, and as a result, even if the water quality is poor and the resistance value of the water is low, there is no risk of electric shock. Also, current corrosion does not occur.
（実施例〕
第１図はこの発明の一実施例を示す縦断面図である。同
図は第２図と同一もしくは相当部分は同一記号を用いて
示しである。図において１は半導体素子、２は一対の電
流端子であり、８は絶縁形水冷ブロックであり、その材
質としては窒化アＪしまたこの材質として多少熱伝導性
は悪いが、アルミナあるいはエポキシ樹脂なども代用で
きる。(Embodiment) Fig. 1 is a longitudinal sectional view showing an embodiment of the present invention. In this figure, the same or equivalent parts as in Fig. 2 are indicated using the same symbols. In the figure, 1 is a semiconductor element; Reference numeral 2 designates a pair of current terminals, and reference numeral 8 designates an insulated water cooling block, the material of which is nitrided aluminum, and although this material has somewhat poor thermal conductivity, alumina or epoxy resin may also be used instead.
４は上記水冷ブロック８の内部に設けられた水路である
。５は絶縁性水冷ブロック８にネジ込み等により取付け
られた、あるいは一体成形にて設けられたホースニップ
ルである。さらに配管ホース６はホースニップル５を介
して２つの水冷ブロック３の水路４を連結しており、該
配管ホース６及び該水路４には図示の矢印方向番こ水力
（流れるようになっている。4 is a water channel provided inside the water cooling block 8. Reference numeral 5 denotes a hose nipple that is attached to the insulating water cooling block 8 by screwing or the like, or is provided by integral molding. Further, the piping hose 6 connects the water channels 4 of the two water cooling blocks 3 via the hose nipples 5, and hydraulic power flows through the piping hose 6 and the water channel 4 in the direction of the arrow shown.
次に本装置の作用効果について説明する。この構造にお
いて、半導体素子１から発生した熱器よ、絶縁性水冷ブ
ロック８を介して水に伝達され、該水に吸収され、該水
が外部へ循環することにより半導体素子１は冷却される
。そしてこの際、水路内部の水は電気回路と該絶縁性水
冷ブロック８により完全に絶縁されており、帯電するこ
と番よなむ）従って本装置においては、感電の恐れある
し）１よ電流腐食などは発生しない。Next, the effects of this device will be explained. In this structure, the heat generated from the semiconductor element 1 is transmitted to water via the insulating water cooling block 8, absorbed by the water, and the semiconductor element 1 is cooled by circulating the water to the outside. At this time, the water inside the water channel is completely insulated by the electric circuit and the insulating water cooling block 8, and it may become charged.)Therefore, in this device, there is a risk of electric shock.1) Current corrosion, etc. does not occur.
また、本発明を用いれば、従来高純水を使用しなければ
製作不可能であった高電圧の半導体素子冷却装置をも用
意に実現できる。Further, by using the present invention, it is possible to easily realize a high-voltage semiconductor device cooling device, which conventionally could not be manufactured without using high-purity water.
なお、本発明は半導体素子を複数個組合わせた場合にも
広く通用できる。Note that the present invention is widely applicable even when a plurality of semiconductor elements are combined.
以上のようにこの発明によれば、水冷ブロックを熱伝導
性の良好な電気絶縁材料で成形したので、冷却水が電気
回路と完全に絶縁され、安全性が高く、かつ電流腐食を
防止できる効果がある。As described above, according to the present invention, since the water cooling block is molded from an electrically insulating material with good thermal conductivity, the cooling water is completely insulated from the electrical circuit, resulting in high safety and the ability to prevent current corrosion. There is.
第１図はこの発明の一実施例を示す縦断面図、第２図は
従来の半導体素子冷却装置の構成例を示す縦断面図であ
る。
図において、１は半導体素子、２は電流端子、３は従来
の水冷ブロック、４は水路、５はホースニップル、６は
配管、７は絶縁座、８は絶縁性水） 冷ブロックであ
る。FIG. 1 is a vertical sectional view showing an embodiment of the present invention, and FIG. 2 is a vertical sectional view showing an example of the configuration of a conventional semiconductor device cooling device. In the figure, 1 is a semiconductor element, 2 is a current terminal, 3 is a conventional water cooling block, 4 is a water channel, 5 is a hose nipple, 6 is a pipe, 7 is an insulating seat, and 8 is an insulating water cooling block.
Claims (1)
において、熱伝導性の良好な電気絶縁材料からなり半導
体素子をその両側から挟持する２つの水冷ブロックを備
えたことを特徴とする半導体素子冷却装置。(1) A semiconductor device cooling device for cooling a semiconductor device, characterized by comprising two water cooling blocks made of an electrically insulating material with good thermal conductivity and sandwiching the semiconductor device from both sides. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60071805A JPS61230346A (en) | 1985-04-04 | 1985-04-04 | Cooling device for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60071805A JPS61230346A (en) | 1985-04-04 | 1985-04-04 | Cooling device for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61230346A true JPS61230346A (en) | 1986-10-14 |
Family
ID=13471147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60071805A Pending JPS61230346A (en) | 1985-04-04 | 1985-04-04 | Cooling device for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61230346A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2674989A1 (en) * | 1991-04-02 | 1992-10-09 | Hitachi Ltd | COOLING DEVICE FOR A SEMICONDUCTOR ELEMENT |
| JP4224217B2 (en) * | 1998-08-18 | 2009-02-12 | 浜松ホトニクス株式会社 | Semiconductor laser stack equipment |
| JP2012019109A (en) * | 2010-07-08 | 2012-01-26 | Toshiba Mitsubishi-Electric Industrial System Corp | Water-cooling fin and high-voltage device |
| WO2018037047A1 (en) * | 2016-08-25 | 2018-03-01 | Siemens Aktiengesellschaft | Power module, method for producing same, and power electronics circuit |
| WO2018020189A3 (en) * | 2016-07-29 | 2018-03-22 | Safran | Power electronics module for an aircraft and associated production method |
| KR20180121624A (en) * | 2016-04-15 | 2018-11-07 | 쿄세라 코포레이션 | Semiconductor device |
-
1985
- 1985-04-04 JP JP60071805A patent/JPS61230346A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2674989A1 (en) * | 1991-04-02 | 1992-10-09 | Hitachi Ltd | COOLING DEVICE FOR A SEMICONDUCTOR ELEMENT |
| JP4224217B2 (en) * | 1998-08-18 | 2009-02-12 | 浜松ホトニクス株式会社 | Semiconductor laser stack equipment |
| JP2012019109A (en) * | 2010-07-08 | 2012-01-26 | Toshiba Mitsubishi-Electric Industrial System Corp | Water-cooling fin and high-voltage device |
| KR20180121624A (en) * | 2016-04-15 | 2018-11-07 | 쿄세라 코포레이션 | Semiconductor device |
| JPWO2017179736A1 (en) * | 2016-04-15 | 2019-02-21 | 京セラ株式会社 | Semiconductor device |
| EP3428964A4 (en) * | 2016-04-15 | 2019-04-17 | KYOCERA Corporation | SEMICONDUCTOR DEVICE |
| US10971430B2 (en) | 2016-04-15 | 2021-04-06 | Kyocera Corporation | Semiconductor device |
| WO2018020189A3 (en) * | 2016-07-29 | 2018-03-22 | Safran | Power electronics module for an aircraft and associated production method |
| WO2018037047A1 (en) * | 2016-08-25 | 2018-03-01 | Siemens Aktiengesellschaft | Power module, method for producing same, and power electronics circuit |
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