JPS61224217A - Manufacture of transparent electroconductive film for laser - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the production of transparent conductive films for lasers.

[Prior art and its problems]

Thin film products for lasers, such as laser mirrors and multilayer polarizing plates, are generally made of dielectrics (insulators) and are charged by laser irradiation, resulting in contamination (
Dust, dust, water vapor) may adhere to the surface, reducing laser strength. In order to prevent this contamination from adhering, a transparent conductive film for antistatic purposes is deposited on the top layer of laser thin film products. The vapor deposition material generally used for transparent conductive films is 5rI02. In2O3
, ITO, which is In2O6 with Sn added. However, when these deposition substances are deposited by vacuum evaporation, only lower oxides are obtained due to dissociation during deposition even if the substrate heating temperature or oxygen partial pressure is increased, and even if the oxygen partial pressure is increased, the absorption coefficient remains 0.
The damage threshold becomes 1% or more and the absorption film becomes 1% or more.
[J/z2:] or less, resulting in laser damage. This absorption coefficient will be discussed later in the detailed description of the invention. Therefore, heat treatment in 02 is performed after vapor deposition to make the film transparent. However, this heat treatment affects the laser thin film product below the transparent conductive layer by heating and oxidation due to the heating. This causes a decrease in laser yield strength due to deviations from the optimum deposition conditions, cracks entering the film, deviations in optical properties, and the like.

Figure 4 shows the influence of baking on the dielectric film under the transparent conductive film for a two-layer non-reflective coating of ZnO2/S+02.
There is almost no change down to 0°C.

At 300°C, the structure of the deposited film changes due to the optimization conditions of optical properties and laser proof strength, resulting in a decrease in damage resistance of about 15 inches, and when the temperature exceeds 400°C, cracks appear in the film. This indicates that the laser proof strength decreases by about a factor of 70.

Generally, baking of transparent conductive films is carried out at 350° C. or higher.

In addition, in vacuum deposition, these deposited substances cannot have sufficient mechanical strength, so that scratches occur on the film surface during handling. Laser light is absorbed by the metal or dust that has entered into these scratches, and laser damage is also caused from this surface.

[Purpose of the invention]

Therefore, it is an object of the present invention to provide a method for manufacturing a laser-transparent conductive film which overcomes the above-mentioned drawbacks and is free from laser damage.

[Structure of the invention]

In order to achieve the above object, the present invention is directed to manufacturing a transparent conductive film for a laser using high frequency ion blating.

〔Example〕

Next, examples of the present invention will be described.

FIG. 1 is a diagram showing the structure of a TTO film manufactured by the method of the present invention, in which 1 is a substrate such as glass or quartz, 2 is a dielectric multilayer film, and 3 is a transparent conductive film. In this example, a dielectric material 2 is deposited on a substrate 1 under the optimum deposition conditions for laser proof strength, and a transparent conductive film 3 is deposited thereon either continuously or by transferring the apparatus once by high-frequency ion blasting.

Since high-frequency ion blating is vapor deposition in plasma, the activation of the vapor deposition substance and the introduced gas is extremely advanced, and therefore a transparent conductive film can be obtained without any heat treatment after vapor deposition. Therefore, it is possible to remove the absorption of the transparent conductive film 3, which often causes a decrease in the laser proof strength due to a deviation from the optimum deposition conditions for the laser proof strength of the dielectric multilayer film 2 due to heat treatment, cracks in the film, deviations in characteristics, etc. , a transparent and highly conductive film can be obtained. This can prevent laser damage caused by absorption of the transparent conductive film 3 and laser damage caused by dust, dust, and water vapor attached due to charging, and improves laser strength.
10 is a diagram showing the relationship between high frequency power and damage threshold when high frequency ion blating is used on a vaporized layer on a reflective coat on a 1022-layer non-reflective coat and when high frequency ion brating is used on a reflective coat. FIG. High frequency ion brating power of 0 is the case where high frequency ion brating is not used. As is clear from this figure, the damage threshold is improved when high-frequency ion blating is used compared to when it is not used. What is even more noteworthy is that when the high-frequency ion brating power is increased, the damage threshold is improved. Ikuto 30
The damage decreases until it reaches around 0W. This tendency changes depending on the deposited material, so it is necessary to understand it for each material.

Figure 3 shows a substrate temperature of 100℃ and a deposition rate of 20A/see.
.

High frequency output 300W (during ion silating).

FIG. 7 is a diagram showing the results of vapor deposition of an ITO film using introduced gas 02 by changing the partial pressure of oxygen, which is the introduced gas, by ion blating and vacuum evaporation. For vacuum deposition, 02
Even if the amount of gas is increased, an absorption rate of about 0.1% remains, but in the case of ion blating, the absorption is two orders of magnitude smaller and does not affect the laser proof strength. Incidentally, if the absorption coefficient is about 10-4 or more, the damage threshold drops to 3 or less, making it unusable.

In addition to the above, high frequency ion blating promotes improved crystallinity and densification of the film by ionizing the deposited material, resulting in improved electrical conductivity and improved mechanical strength. The improved conductivity makes it easier for charged charges to escape, thereby reducing the adhesion of dust, dirt, water vapor, etc., thereby further improving the laser strength.

Improved mechanical strength prevents scratches during handling.

By preventing laser damage caused by absorption of metal and metal particles that penetrate into scratches, laser strength ratings can be used to manufacture transparent conductive films for lasers, and the dielectric multilayer film underneath the transparent conductive film can be The purpose is to improve the laser proof strength by improving the transparency, conductivity, and mechanical strength of the transparent conductive film without impairing its performance.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the structure of an ITO film manufactured by the method of the present invention, FIG. 2 is a diagram showing an example of the relationship between high frequency ion blating power and damage threshold, and FIG.
A diagram showing the absorption coefficient when the oxygen □ partial pressure is changed in the ion blating of the present invention and the conventional vacuum evaporation of the TO film,
FIG. 4 is a diagram showing the relationship between baking temperature and threshold when performing the baking required in the prior art. Explanation of symbols: 1 represents a substrate made of glass or quartz, 2 represents a dielectric multilayer film, and 3 represents a transparent conductive film. Agent (77 illusion) Patent attorney Noriyasu Ikeda 3 - Transparent conductive gland Kosensakaki

Claims (1)

[Claims] A method for producing a transparent conductive film for lasers, characterized in that high frequency ion plating is used in the production of the transparent conductive film for lasers.