JPS61222228A - Light receiving element - Google Patents
Light receiving elementInfo
- Publication number
- JPS61222228A JPS61222228A JP60062165A JP6216585A JPS61222228A JP S61222228 A JPS61222228 A JP S61222228A JP 60062165 A JP60062165 A JP 60062165A JP 6216585 A JP6216585 A JP 6216585A JP S61222228 A JPS61222228 A JP S61222228A
- Authority
- JP
- Japan
- Prior art keywords
- film
- receiving element
- light
- light receiving
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光センサーあるいは小型ビデオカメラの固体
撮像素子等に用いられる受光素子、特にその保護膜に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a light receiving element used in an optical sensor or a solid-state image sensor of a small video camera, and particularly to a protective film thereof.
（従来の技術）
近年、受光素子はセンサを始め固体撮像素子等に幅広く
用いられており、その保護膜としては、常圧ＣＶＤ法あ
るいは減圧ＣＶＤ法で、形成するＰｈｏｓｐｈｏｓｉｌ
ｉｃａｔｅ Ｇｌａｓｓ（以下ＰＳＧ膜と略す）膜か、
または、プラズマＣＶＤ法で形成するシリコンナイトラ
イド膜がよく用いられている（たとえば、Ｓ、 Ｍ、
Ｓｚｅ： ＶＬＳＩ Ｔｅｃｈｎｏｌｏｇｙ、 ＭｃＧ
ｒａｗ Ｈｉｌｌ。(Prior Art) In recent years, light-receiving elements have been widely used in sensors and solid-state image sensors, etc., and their protective films include Phosphosil, which is formed by atmospheric pressure CVD or low-pressure CVD.
Icate Glass (hereinafter abbreviated as PSG film) film,
Alternatively, silicon nitride films formed by plasma CVD are often used (for example, S, M,
Sze: VLSI Technology, McG
raw hill.
Ｐ、１１９）。P, 119).
第２図は上記の保護膜を有する受光素子を示す模式図で
あり、以下、この図面を参照しながら。FIG. 2 is a schematic diagram showing a light receiving element having the above-mentioned protective film, and this drawing will be referred to below.
従来のＰＳＧ膜とシリコンナイトライド膜について説明
する。第２図において、１はｐ型基板（あるいはｐ型領
域）、２はｎ０型領域で形成した受光部、３はシリコン
オキサイド（ＳｉＯｉ）膜、４は保護膜であり、上記Ｐ
ＳＧ膜、あるいはシリコンナイトライド膜で形成されて
いる。A conventional PSG film and a silicon nitride film will be explained. In FIG. 2, 1 is a p-type substrate (or p-type region), 2 is a light receiving part formed of an n0-type region, 3 is a silicon oxide (SiOi) film, and 4 is a protective film.
It is formed of an SG film or a silicon nitride film.
（発明が解決しようとする問題点）
しかしながら、上述のように受光素子の保護膜４として
ＰＳＧ膜を用いた場合、耐湿性、耐アルカリ性が悪いた
め、受光素子あるいはそれを用いた装置の信頼性を保証
するという点で問題がある。(Problems to be Solved by the Invention) However, as described above, when a PSG film is used as the protective film 4 of the light-receiving element, the reliability of the light-receiving element or the device using it is poor due to poor moisture resistance and alkali resistance. There is a problem in ensuring that
信頼性を保証するためには耐湿性・耐アルカリ性に優れ
たシリコンナイトライド膜の方がＰＳＧ膜より優れてい
る。しかし、保護膜４をシリコンナイトライド膜で形成
した場合、その屈折率ｎ＝２．０と、シリコンオキサイ
ド３の屈折率ｎ＝１．５の大きな相違により、その界面
で光の反射が大きくなることなどから、受光素子の感度
が犠牲になるといった問題がある。In order to guarantee reliability, a silicon nitride film with excellent moisture resistance and alkali resistance is better than a PSG film. However, when the protective film 4 is formed of a silicon nitride film, the large difference between its refractive index n=2.0 and the refractive index n=1.5 of the silicon oxide 3 increases the reflection of light at the interface. For this reason, there is a problem that the sensitivity of the light receiving element is sacrificed.
本発明は上述の問題点に鑑みてなされたもので、受光感
度を殆ど損なうことなく、信頼性が保証できる保護膜を
設けた受光素子の提供を目的とするものである。The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a light-receiving element provided with a protective film that can guarantee reliability without substantially impairing light-receiving sensitivity.
（問題点を解決するための手段） 上記問題点を解決するため本発明の受光素子は。(Means for solving problems) In order to solve the above problems, the light receiving element of the present invention is provided.
受光部のシリコンオキサイド膜の上に第１の膜としてシ
リコンオキシナイトライド（ＳｉＯｘＮＸ−ｘ）膜を。A silicon oxynitride (SiOxNX-x) film is placed as a first film on the silicon oxide film of the light receiving section.
前記シリコンオキサイド膜に接する部分はＸを大きくし
てシリコンオキサイドとして形成し、膜厚の増加にした
がってＸを連続的に減少させ、シリコンナイトライドの
組成に近づけ、膜の上部ではシリコンナイトライドとな
るように設ける０次にその上に第２の膜として、シリコ
ンナイトライド膜を形成させた保護膜を有する受光素子
として形成したものである。The part in contact with the silicon oxide film is formed as silicon oxide by increasing X, and as the film thickness increases, X is continuously decreased to approach the composition of silicon nitride, and the upper part of the film becomes silicon nitride. A light-receiving element is formed having a protective film on which a silicon nitride film is formed as a second film.
（作 用）
この上記した構造によれば上部は耐湿性・耐アルカリ性
に優れたシリコンナイトライド膜で保護されているため
、受光素子の信頼性は保証される。(Function) According to the above structure, the reliability of the light receiving element is guaranteed because the upper part is protected by a silicon nitride film having excellent moisture resistance and alkali resistance.
また、受光部のシリコンオキサイド膜と界面での屈折率
の差がなくなり、がっ、保護膜内での屈折率も連続的に
変化しているため光の反射による損失が少なく、受光素
子としての受光感度はそれほど犠牲にならない、すなわ
ち、受光感度を低下させずに信頼度の高い受光素子が形
成できる。In addition, there is no difference in refractive index between the silicon oxide film of the light receiving part and the interface, and the refractive index within the protective film changes continuously, so there is less loss due to light reflection, making it suitable for use as a light receiving element. The light-receiving sensitivity is not sacrificed much, that is, a highly reliable light-receiving element can be formed without reducing the light-receiving sensitivity.
（実施例）
第１図は、本発明の一実施例を示す模式図で１ないし３
は第２図と同じものを指し、５は第１の膜としてのシリ
コンオキシナイトライド膜、６は第２の膜としてのシリ
コンナイトライド膜を保護膜とした受光素子の例を示す
ものである。なお。(Example) FIG. 1 is a schematic diagram showing an example of the present invention.
2 refers to the same thing as in FIG. 2, and 5 shows an example of a light-receiving element using a silicon oxynitride film as a first film and a silicon nitride film as a second film as a protective film. . In addition.
第１図に併記したグラフは、上記保護膜の膜厚（縦軸）
の変化に対する屈折率（横軸）の変化を表わしたもので
、膜厚の高さは右図の模式図に合せである。The graph shown in Figure 1 shows the thickness of the protective film (vertical axis).
It shows the change in refractive index (horizontal axis) with respect to the change in , and the height of the film thickness matches the schematic diagram on the right.
第１の膜、シリコンオキシナイトライド（ＳｉｎｘＮｌ
−ｘ）膜５は、シランガス、酸素ガス、アンモニアガス
の混合ガスを使ったプラズマＣＶＤ法により形成される
。Ｘの値は、オキシゲンガス量に対するアンモニアガス
量の比（以下αと呼ぶ）によって決まり、αが大きいほ
どＸは小、さくなる。The first film, silicon oxynitride (SinxNl)
-x) The film 5 is formed by plasma CVD using a mixed gas of silane gas, oxygen gas, and ammonia gas. The value of X is determined by the ratio of the amount of ammonia gas to the amount of oxygen gas (hereinafter referred to as α), and the larger α is, the smaller X becomes.
したがってαを変化させながら膜を形成することによっ
て、シリコンオキサイド膜３と接する部分の膜の組成は
シリコンオキサイドであり、膜厚が増加するにしたがっ
てＸは連続的に減少し、膜の上部の組成はシリコンナイ
ドであるようにシリコンオキシナイトライド膜５を形成
することができる。第２のシリコンナイトライド膜６は
、従来のプラズマＣＶＤ法によって設けられる。Therefore, by forming the film while changing α, the composition of the film in the part in contact with the silicon oxide film 3 is silicon oxide, and as the film thickness increases, X continuously decreases, and the composition of the upper part of the film is The silicon oxynitride film 5 can be formed by using silicon nide. The second silicon nitride film 6 is provided by a conventional plasma CVD method.
本発明は上記した構造により受光素子の信頼性を、シリ
コンナイトライド膜６で保証し、しかも屈折率の不連続
を第１図のグラフで示したように次第に変化させて無く
するから、光の反射光がなく、シたがって受光素子とし
ての感度を殆ど低下させない。The present invention guarantees the reliability of the light-receiving element with the above structure using the silicon nitride film 6, and also eliminates discontinuity in the refractive index by gradually changing it as shown in the graph of FIG. There is no reflected light, so the sensitivity of the light receiving element is hardly reduced.
（発明の効果）
以上述べたように１本発明によれば、きわめて簡単な構
造で、耐湿性・耐アルカリ性に優れ、しかも感度をそれ
ほど犠牲にしない保護膜を有する受光素子であるから、
実用的に極めて有用である。(Effects of the Invention) As described above, according to the present invention, the light receiving element has an extremely simple structure, has excellent moisture resistance and alkali resistance, and has a protective film that does not significantly sacrifice sensitivity.
It is extremely useful in practical terms.
【図面の簡単な説明】
第１図は、本発明の一実施例における受光素子の模式的
断面図、第２図は従来の受光素子の模式的断面図である
。
１ ・・・ｐ型基板（あるいはｐ要領域）、 ２・・：
ｎ９領域、 ３・・・シリコンオキサイド（ＳＯ２）膜
、 ４・・・保護膜、 ５・・・シリコンオキシナイト
ライド（ＳＩＯｘＮｚ−ｘ）膜、 ６・・・シリコンナ
イトライド（Ｓｉ□Ｎ４）膜。
特許出願人 松下電子工業株式会社
゛−姻ヲBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view of a light-receiving element according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional light-receiving element. 1...p-type substrate (or p-required region), 2...:
n9 region, 3... Silicon oxide (SO2) film, 4... Protective film, 5... Silicon oxynitride (SIOxNz-x) film, 6... Silicon nitride (Si□N4) film. Patent applicant: Matsushita Electronics Co., Ltd.
Claims (1)
層組成とし、外表面側にシリコンナイトライド（ＳｉＮ
＿４）膜を、その下面受光部側にシリコンオキシナイト
ライド（ＳｉＯ＿ｘＮ＿１＿−＿ｘ）膜を形成させ、か
つ、上記シリコンオキシナイトライド膜の組成を連続的
に変化させることにより、前記保護膜内の屈折率を連続
するように形成したことを特徴とする受光素子。In a light receiving element provided with a protective film on the outer surface, the protective film is
The layer composition is silicon nitride (SiN) on the outer surface side.
_4) By forming a silicon oxynitride (SiO_xN_1_-_x) film on the lower light-receiving part side of the film and continuously changing the composition of the silicon oxynitride film, refraction within the protective film is reduced. 1. A light-receiving element characterized by being formed so that the ratio is continuous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062165A JPH0691268B2 (en) | 1985-03-28 | 1985-03-28 | Light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062165A JPH0691268B2 (en) | 1985-03-28 | 1985-03-28 | Light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61222228A true JPS61222228A (en) | 1986-10-02 |
| JPH0691268B2 JPH0691268B2 (en) | 1994-11-14 |
Family
ID=13192231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062165A Expired - Lifetime JPH0691268B2 (en) | 1985-03-28 | 1985-03-28 | Light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691268B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS649626A (en) * | 1987-07-01 | 1989-01-12 | Nec Corp | Semiconductor device |
| EP1949450A1 (en) * | 2005-11-08 | 2008-07-30 | LG Chem, Ltd. | Solar cell of high efficiency and process for preparation of the same |
| JP2010238863A (en) * | 2009-03-31 | 2010-10-21 | Fujifilm Corp | Flexible solar cell module |
| JP2013508998A (en) * | 2009-10-27 | 2013-03-07 | シリコー マテリアルズ インコーポレイテッド | Polarization resistance solar cell with oxygen-enriched interface |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100974220B1 (en) * | 2006-12-13 | 2010-08-06 | 엘지전자 주식회사 | Solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062774A (en) * | 1973-10-06 | 1975-05-28 | ||
| JPS5365066A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
-
1985
- 1985-03-28 JP JP60062165A patent/JPH0691268B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5062774A (en) * | 1973-10-06 | 1975-05-28 | ||
| JPS5365066A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS649626A (en) * | 1987-07-01 | 1989-01-12 | Nec Corp | Semiconductor device |
| EP1949450A1 (en) * | 2005-11-08 | 2008-07-30 | LG Chem, Ltd. | Solar cell of high efficiency and process for preparation of the same |
| JP2009515336A (en) * | 2005-11-08 | 2009-04-09 | エルジー・ケム・リミテッド | High efficiency solar cell and preparation method thereof |
| EP1949450A4 (en) * | 2005-11-08 | 2012-08-01 | Lg Electronics Inc | HIGH EFFICIENCY SOLAR CELL AND PROCESS FOR PREPARING THE SAME |
| JP2010238863A (en) * | 2009-03-31 | 2010-10-21 | Fujifilm Corp | Flexible solar cell module |
| JP2013508998A (en) * | 2009-10-27 | 2013-03-07 | シリコー マテリアルズ インコーポレイテッド | Polarization resistance solar cell with oxygen-enriched interface |
| US9166071B2 (en) | 2009-10-27 | 2015-10-20 | Silicor Materials Inc. | Polarization resistant solar cell design using an oxygen-rich interface layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0691268B2 (en) | 1994-11-14 |
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