[go: up one dir, main page]

JPS61212819A - Semiconductor laser light source device - Google Patents

Semiconductor laser light source device

Info

Publication number
JPS61212819A
JPS61212819A JP60053844A JP5384485A JPS61212819A JP S61212819 A JPS61212819 A JP S61212819A JP 60053844 A JP60053844 A JP 60053844A JP 5384485 A JP5384485 A JP 5384485A JP S61212819 A JPS61212819 A JP S61212819A
Authority
JP
Japan
Prior art keywords
beams
parallel
light source
source device
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60053844A
Other languages
Japanese (ja)
Inventor
Hiromi Ishikawa
弘美 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP60053844A priority Critical patent/JPS61212819A/en
Publication of JPS61212819A publication Critical patent/JPS61212819A/en
Pending legal-status Critical Current

Links

Landscapes

  • Facsimile Scanning Arrangements (AREA)
  • Semiconductor Lasers (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Exposure Or Original Feeding In Electrophotography (AREA)

Abstract

PURPOSE:To adjust easily the position of a laser beam by arranging parallel plane plates which are variable in inclination to a beam on optical paths of mutually parallel laser beams. CONSTITUTION:Mutually parallel beams 31-34 from semiconductor lasers 11-14 are made incident on a converging lens 6 through collimator lenses 21-24, reflecting mirrors 41-44, and an optical deflector 5 to scan on a scanning surface 7. When parallel plane plates 51-54 on optical paths between the collimator lenses and reflecting mirrors are rotated around rotating shafts 60, adjacent beams vary in interval and when they are rotated around rotating shafts 62, upper/lower positions of the beams are adjusted, so that the four beams are aligned strictly in line. Therefore, the positions of the parallel laser beams are easily adjustable through the parallel planes 51-54 of simple structure.

Description

【発明の詳細な説明】 (発明の分野) 本発明は光ビーム走査装置に用いられる半導体レーザ光
源装置、特に詳細には複数の半導体レーザから射出され
たレーザビームを1点に集束させるようにした半導体レ
ーザ光源装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of the Invention) The present invention relates to a semiconductor laser light source device used in a light beam scanning device, and more particularly, to a semiconductor laser light source device that focuses laser beams emitted from a plurality of semiconductor lasers to one point. The present invention relates to a semiconductor laser light source device.

(発明の技術的背景および先行技術) 従来より、光ビームを光偏向器により偏向しで走査する
光ビーム走査装置が、例えば各種走査記録装置、走査読
取装置等において広く実用に供されている。このような
光ビーム走査装置において光ビームを発生ずる手段の1
つとして、半導体レーザが従来から用いられている。こ
の半導体レーザは、ガスレーザ等に比べれば小型、安価
で消費電力も少なく、また駆動電流を変えることによっ
て直接変調が可能である等、数々の長所を有している。
(Technical Background and Prior Art of the Invention) Conventionally, light beam scanning devices that scan a light beam by deflecting it with an optical deflector have been widely used in, for example, various scanning recording devices, scanning reading devices, and the like. One of the means for generating a light beam in such a light beam scanning device
As one example, semiconductor lasers have been conventionally used. This semiconductor laser has many advantages, such as being smaller, cheaper, and consumes less power than gas lasers, and can be directly modulated by changing the drive current.

しかしながら、その反面この半導体レーザは、連続発振
させる場合には現状では出力がたかたか20〜30′I
rLWと小さく、したがって高エネルギーの走査光を必
要とする光ビーム走査装置、例えば感度の低い記録材料
(需属膜、アモルフ・ス膜等のDRAWl料等)に記録
する走査記録装置等に用いるのは極めて困難である。
However, on the other hand, this semiconductor laser currently has a high output of 20 to 30'I when continuously oscillated.
The rLW is small and therefore it is used in light beam scanning devices that require high-energy scanning light, such as scanning recording devices that record on recording materials with low sensitivity (such as DRAW materials such as commercial films and amorphous films). is extremely difficult.

また、ある種の螢光体に放射線(X線、α線、β線、γ
線、電子線、紫外線等)を照射すると、この放射線エネ
ルギーの一部が螢光体中に蓄積され、この螢光体に可視
光等の励起光を照射すると、蓄積されたエネルギーに応
じて螢光体が輝尽発光を示ずことか知られており、この
ような蓄積性螢光体を利用して、人体等の被写体の放射
線画像情報を一旦蓄積性螢光体からなる層を有する蓄積
性螢光体シートに記録し、この蓄積性螢光体シートをレ
ーザ光等の励起光で走査して輝尽発光光を生ぜしめ、得
られた輝尽発光光を光電的に読み出して画像信号を得、
この画像信号に基づき被写体の放射線画像を写真感光材
料等の記録材料、CRT等に可視像として出力させる放
射線画像情報記録再生システムが本出願人により既に提
案されている(特開昭55−12429号、同55−1
16340号、同55−163472号、同56−11
39へ号、同56−104645号など)。このシステ
ムにおいて放射線画像情報が蓄積記録された蓄積性螢光
体シートを走査して画像情報の読取りを行なうのに、半
導体レーザを用いた光ビーム走査装置の使用が考えられ
ているが、蓄積性螢光体を輝尽発光させるためには、十
分に高エネルギーの励起光を該螢光体に照射する必要が
あり、したがって前記半導体レーザを用いた光ビーム走
査装置を、この放射線画像情報記録再生システムにおい
て画像情報読取りのために使用することも極めて難しい
Also, some types of fluorophores are exposed to radiation (X-rays, α-rays, β-rays, γ-rays, etc.).
When the phosphor is irradiated with rays, electron beams, ultraviolet rays, etc., a portion of this radiation energy is accumulated in the phosphor, and when the phosphor is irradiated with excitation light such as visible light, the phosphor emits light according to the accumulated energy. It is known that luminous materials do not exhibit stimulated luminescence, and by using such stimulable phosphors, radiation image information of subjects such as the human body can be stored once in a storage layer with a layer of stimulable phosphors. This stimulable phosphor sheet is scanned with excitation light such as a laser beam to generate stimulated luminescent light, and the resulting stimulated luminescent light is read out photoelectrically to produce an image signal. obtained,
The applicant has already proposed a radiation image information recording and reproducing system that outputs the radiation image of the subject as a visible image to a recording material such as a photographic light-sensitive material, CRT, etc. based on this image signal (Japanese Patent Laid-Open No. 55-12429 No. 55-1
No. 16340, No. 55-163472, No. 56-11
No. 39, No. 56-104645, etc.). In this system, the use of a light beam scanning device using a semiconductor laser has been considered in order to read the image information by scanning the stimulable phosphor sheet on which radiation image information has been stored and recorded. In order to stimulate the phosphor to emit light, it is necessary to irradiate the phosphor with excitation light of sufficiently high energy. It is also extremely difficult to use it for reading image information in a system.

そこで上記の通り光出力が低い半導体レーザから十分高
エネルギーの走査ビームを得るために、複数の半導体レ
ーザを使用し、これらの半導体レーザから射出されたレ
ーザビームを1本に合成することが考えられる。このよ
うに複数のレーザビームを合成Jる半導体レーザ光源装
置として、例えば第4図に示されるように、ビーム射出
軸が互いに平行となるように複数の半導体レーザ11.
12.13.14を配置するとともに、これら半導体レ
ーザ11.12.13.14から射出された各レーザビ
ーム31.32.33.34をそれぞれコリメータレン
ズ21.22.23.24によって平行ビームとした上
で集束レンズ6に通し、該集束レンズ6によって1点に
集束させるようにしたものが考えられている。なおこの
第4図の装置において、平面鏡41.42.43.44
によって互いに間隔を狭められたレーザビーム31〜3
4はガルバノメータミラー等の光偏向器5によって偏向
され、集束レンズ6によってスポットSに集束されて、
被走査面7上を走査する。
Therefore, as mentioned above, in order to obtain a sufficiently high-energy scanning beam from a semiconductor laser with low optical output, it is possible to use multiple semiconductor lasers and combine the laser beams emitted from these semiconductor lasers into one beam. . As shown in FIG. 4, for example, as a semiconductor laser light source device that synthesizes a plurality of laser beams, a plurality of semiconductor lasers 11.
12.13.14 were arranged, and each laser beam 31.32.33.34 emitted from these semiconductor lasers 11.12.13.14 was made into a parallel beam by a collimator lens 21.22.23.24. It has been considered that the light is passed through a focusing lens 6 at the top and focused at one point by the focusing lens 6. In addition, in the apparatus shown in FIG. 4, plane mirrors 41, 42, 43, 44
Laser beams 31-3 spaced apart from each other by
4 is deflected by an optical deflector 5 such as a galvanometer mirror, and focused to a spot S by a focusing lens 6,
The surface to be scanned 7 is scanned.

ところで上記構成の半導体レーザ光源装置においては、
集束レンズ6やビーム走査のための光偏向器5の大型化
を回避し、また集束レンズ6の収差の影響を少なくする
ために、各レーザご−ム31〜34を、互いにできるだ
け近接し、そして−線に揃った状態で光偏向器5および
集束レンズ6に入射させることが望まれる。そこで各半
導体レーザ11〜14とコリメータレンズ21〜24を
、光軸間隔を変える方向(第4図の矢印X方向)および
それと直角な方向く同じくY方向)に位置調整可能とし
、各レーザビーム31〜34の射出位置を微調整するこ
とが考えられる。しかしこれらの半導体レーザ11〜1
4やコリメータレンズ21〜24には通常、それぞれの
光軸を互いに平行に揃えるための調整機構が取り(t 
I)られるようになっており、したがってさらに上記の
ような位置調整機構を付加すると、この部分は極めて複
雑かつ大型化してしまう。
By the way, in the semiconductor laser light source device with the above configuration,
In order to avoid increasing the size of the focusing lens 6 and the optical deflector 5 for beam scanning, and to reduce the influence of aberrations of the focusing lens 6, the laser beams 31 to 34 are placed as close to each other as possible, and It is desirable to make the light incident on the optical deflector 5 and the focusing lens 6 in a state where the light is aligned in a - line. Therefore, the positions of each of the semiconductor lasers 11 to 14 and the collimator lenses 21 to 24 are made adjustable in the direction of changing the optical axis spacing (the direction of the arrow X in FIG. It is conceivable to finely adjust the injection position of ~34. However, these semiconductor lasers 11-1
4 and collimator lenses 21 to 24 are usually provided with adjustment mechanisms (t) for aligning their respective optical axes parallel to each other.
I) Therefore, if a position adjustment mechanism such as the one described above is added, this part will become extremely complicated and large.

、(発明の目的) そこで本発明は、集束レンズに入射させる互いに平行な
複数のレーザビームの位置を、簡単に調整する・ことが
できる半導体レーザ光源装置を提供することを目的とす
るもので゛ある。
(Objective of the Invention) Therefore, an object of the present invention is to provide a semiconductor laser light source device that can easily adjust the positions of a plurality of mutually parallel laser beams that are incident on a focusing lens. be.

(発明の構成) 本発明の半導体レーザ光源装置は、前述したように複数
の半導体レーザから射出されコリメートされた上で互い
が平行とされた各レーザビームを集束レンズにより1点
に合成する半導体レーザ光源装置において、上記各レー
ザビームのそれぞれの光路に、該ビームに対する傾きを
変更可能に支持された平行平面板を配設したことを特徴
とづ−るものである。
(Structure of the Invention) As described above, the semiconductor laser light source device of the present invention is a semiconductor laser that combines laser beams emitted from a plurality of semiconductor lasers, collimated, and made parallel to each other into one point by a focusing lens. The light source device is characterized in that a parallel plane plate supported so as to be able to change its inclination with respect to the laser beam is disposed in each optical path of each of the laser beams.

(実施態様) 以下、図面に示す実施態様に基づいて本発明の詳細な説
明する。
(Embodiments) Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.

第1.2および3図は本発明の半導体レーザ光源装置の
一実施憇様を示すものである。第1図に示されるように
、−例として4つの半導体レーデ11.12.73.1
4は互いにビーム射出軸を平行に揃えて配置され、これ
らの半導体レーザ11.12.13.14のそれぞれに
λ1してコリメータレンズ21.22.23.24と、
反Q・1鏡41.42.43.44が設CJられている
。各半導体レーザ11.12.13.14から射出され
lこレーザビーム31.32.33.34は、」二記]
リメータレンズ21.22.23.24によって平行ビ
ームとされ、これらの平行ビームは上記反射鏡41.4
2.43.44において反射し、図中矢印へ方向に往復
回動する光偏向器5に」;り偏向される。偏向されたレ
ーザビーム31〜34は共通の集束レンズ6に入則し、
該集束レンズ6により1つの合成ビームスボッ1〜Sに
集中されるとともに、それぞれがとのスポラ1− Sに
おいて集束される。したがつ【上記スポットSが照射さ
れる位置に被走査面7を配置ずれば、該被走査面7は、
各半導体レーザ11〜14からI=J Hjされたレー
ザビーム31〜34が合成されて高エネルギーとなった
走査ビームによって矢印B方向に走査される。なお通常
上記被走査面7は平面とされ、そのlζめに集束レンズ
6どして1゛θレンズが用いられる。
1.2 and 3 show one embodiment of the semiconductor laser light source device of the present invention. As shown in FIG.
4 are arranged with their beam emission axes aligned parallel to each other, and each of these semiconductor lasers 11, 12, 13, 14 is provided with a collimator lens 21, 22, 23, 24 at λ1.
Anti-Q・1 mirror 41, 42, 43, 44 is installed CJ. The laser beams 31.32.33.34 emitted from each semiconductor laser 11.12.13.14 are
The remetering lenses 21.22.23.24 convert them into parallel beams, and these parallel beams pass through the reflecting mirror 41.4.
2.43.44, and is deflected by the optical deflector 5, which rotates back and forth in the direction of the arrow in the figure. The deflected laser beams 31 to 34 enter a common focusing lens 6,
The focusing lens 6 focuses the combined beam into one composite beam spot 1-S, and each of the beams is focused on the respective spora 1-S. [If the surface to be scanned 7 is placed at the position where the spot S is irradiated, the surface to be scanned 7 will be
The laser beams 31 to 34 obtained by I=J Hj from the respective semiconductor lasers 11 to 14 are combined and scanned in the direction of arrow B by a high-energy scanning beam. Note that the surface to be scanned 7 is usually a flat surface, and a 1゛θ lens is used as the focusing lens 6 on the lζth plane.

ここで本発明装置の特徴部分として、コリメータレンズ
21〜24ど反射鏡41〜44との間において、各レー
ザビーム31〜34の光路には、それぞれ1ノーザビー
ム31〜34か透過覆る平行平面板51.52.03.
54が配設されている。第2図に示すように平行平面板
51は、垂直イ1回動φl1160を中心に回動自在と
された支持具61に、水平な回動軸62を中心に回動自
在に支持されている。上記回動軸60および62は図示
しない公知の微動回転機構に連結されており、これらの
回動軸60.62が回動されれば平行平面板51は、レ
ーザビーム37に対Jる傾ぎを変えるように回動する。
Here, as a characteristic part of the apparatus of the present invention, between the collimator lenses 21 to 24 and the reflecting mirrors 41 to 44, the optical path of each laser beam 31 to 34 includes a parallel plane plate 51 that transmits and covers one norther beam 31 to 34, respectively. .52.03.
54 are arranged. As shown in FIG. 2, the parallel plane plate 51 is supported rotatably around a horizontal rotation axis 62 by a support 61 that is rotatable around a vertical axis 1160. . The rotation shafts 60 and 62 are connected to a known fine rotation mechanism (not shown), and when these rotation shafts 60 and 62 are rotated, the parallel plane plate 51 is tilted with respect to the laser beam 37. Rotate to change.

なお拡大図示しないその他の平行平面板52〜54も、
上記平行平面板51と同様に支持されている。
Note that other parallel plane plates 52 to 54 not shown in the enlarged drawings are also
It is supported in the same way as the parallel plane plate 51 described above.

第3図の平面図に示すように、平行平面板51を前記回
動軸60を中心に回動さゼれば、レーザビーム31は屈
折し、隣合うレーザビーム32との間隔が変わるように
なる。したがってこの平行平面板51の回動位置を調整
することにより、反1)1鏡41から出射したレーザビ
ーム31を、隣合うレーザビーム32とできるだけ近接
し、しかも反射鏡42によってケラれることがないよう
な位置(第1図におけるZ方向位置)に設定することが
できる。その他のレーザビーム32〜34も、ぞれぞれ
平行平面板52〜54の回動位置を調整することにより
、上記と同様に位置調整されうる。
As shown in the plan view of FIG. 3, when the parallel plane plate 51 is rotated about the rotation axis 60, the laser beam 31 is refracted so that the distance between adjacent laser beams 32 changes. Become. Therefore, by adjusting the rotating position of this parallel plane plate 51, the laser beam 31 emitted from the mirror 41 can be brought as close as possible to the adjacent laser beam 32, and will not be eclipsed by the reflecting mirror 42. It can be set at such a position (Z-direction position in FIG. 1). The positions of the other laser beams 32 to 34 can also be adjusted in the same manner as described above by adjusting the rotational positions of the parallel plane plates 52 to 54, respectively.

また平行平面板51を、前記回動軸62を中心に回動さ
せれば、レーザご−ム31の上下位置(第1図における
Y方向位置)を調整することができる。
Further, by rotating the parallel plane plate 51 about the rotation shaft 62, the vertical position of the laser beam 31 (the position in the Y direction in FIG. 1) can be adjusted.

その他のレーザビーム32〜34についても各々平行8
一 平面板52〜54を操作することによって上記のJ:う
に上下位置を調整することができるから、4本のレーザ
ビーム31〜34を厳密に一線に揃えることが可能どな
る。
The other laser beams 32 to 34 are each parallel to 8
By operating the plane plates 52 to 54, the vertical position can be adjusted as described above, making it possible to align the four laser beams 31 to 34 exactly in one line.

なお、本発明において、集束レンズ6は単レンズであっ
てもJ:いし、あるいは複数のレンズが組合わせられた
ものであってもよい。
In the present invention, the focusing lens 6 may be a single lens, or may be a combination of a plurality of lenses.

(発明の効果) 以上詳細に説明した通り本発明の半導体レーザ光源装置
によれば、集束レンズや光偏向器に入射する複数のレー
ザビームの間隔を容易に調整可能で、またこれらのレー
ザビームを一線に揃える調整も容易になされうる。しか
も上記調整はレーザビーム光路に配された構造簡単な平
行平面板によってなされるので、半1(ホレーザや」リ
メータレンズまわりの構造が複雑化することがない。
(Effects of the Invention) As described above in detail, according to the semiconductor laser light source device of the present invention, the intervals between the plurality of laser beams incident on the focusing lens and the optical deflector can be easily adjusted, and the distance between these laser beams can be easily adjusted. Adjustments to align them in line can also be easily made. Moreover, since the above adjustment is performed by a parallel plane plate with a simple structure placed in the laser beam optical path, the structure around the half-laser or remeter lens does not become complicated.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施態様による半導体レーザ光源装
置を示す斜視図、 第2図は上記実施態様装置に用いられた平行平面板を詳
しく示す拡大斜視図、 第3図は上記実施態様装置の一部を示す平面図、第4図
は従来の半導体レーザ光源装置の一例を示す斜視図であ
る。 6・・・集束レンズ 11.12.13.14・・・半導体レーザ21.22
.23.24・・・コリメータレンズ31.32.33
.34・・・レーザビーム51.52.53.54・・
・平行平面板60、62・・・平行平面板の回動軸 6
1・・・支持具ニ 第4 7ど−)、         4443特開昭G1−2
12819(5) 図 、   42  41
FIG. 1 is a perspective view showing a semiconductor laser light source device according to an embodiment of the present invention, FIG. 2 is an enlarged perspective view showing in detail a parallel plane plate used in the above embodiment device, and FIG. 3 is a perspective view showing the above embodiment device FIG. 4 is a perspective view showing an example of a conventional semiconductor laser light source device. 6...Focusing lens 11.12.13.14...Semiconductor laser 21.22
.. 23.24...Collimator lens 31.32.33
.. 34... Laser beam 51.52.53.54...
・Parallel plane plates 60, 62...Rotation axis of parallel plane plate 6
1...Support device No. 47), 4443 Japanese Patent Application Publication No. 1999-1999 G1-2
12819(5) Figure, 42 41

Claims (1)

【特許請求の範囲】[Claims]  複数の半導体レーザから射出されコリメートされた上
で互いが平行とされた各レーザビームを、集束レンズに
より1点に集束させる半導体レーザ光源装置において、
前記各レーザビームのそれぞれの光路に、該ビームに対
する傾きを変更可能に支持された平行平面板が配設され
ていることを特徴とする半導体レーザ光源装置。
In a semiconductor laser light source device that focuses laser beams emitted from a plurality of semiconductor lasers, which are collimated and made parallel to each other, to one point by a focusing lens,
A semiconductor laser light source device characterized in that a parallel plane plate supported so as to be able to change an inclination with respect to the beam is disposed in each optical path of each of the laser beams.
JP60053844A 1985-03-18 1985-03-18 Semiconductor laser light source device Pending JPS61212819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60053844A JPS61212819A (en) 1985-03-18 1985-03-18 Semiconductor laser light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60053844A JPS61212819A (en) 1985-03-18 1985-03-18 Semiconductor laser light source device

Publications (1)

Publication Number Publication Date
JPS61212819A true JPS61212819A (en) 1986-09-20

Family

ID=12954085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60053844A Pending JPS61212819A (en) 1985-03-18 1985-03-18 Semiconductor laser light source device

Country Status (1)

Country Link
JP (1) JPS61212819A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311358A (en) * 2001-04-12 2002-10-23 Ricoh Co Ltd Optical scanning method and optical scanner and image forming device
JP2008065045A (en) * 2006-09-07 2008-03-21 Ricoh Co Ltd Light source device, optical scanner and image forming apparatus
US7369287B2 (en) 2004-10-14 2008-05-06 Samsung Electronics Co., Ltd. Mirror positioning structure for compensation of skew and bow and laser scanning unit employing the same
WO2014034428A1 (en) * 2012-08-29 2014-03-06 株式会社フジクラ Light guiding device, method for producing same, and ld module
JP2015111177A (en) * 2013-11-15 2015-06-18 株式会社フジクラ Light guide device, manufacturing method, and ld module
US9774171B2 (en) 2012-12-27 2017-09-26 Fujikura Ltd. Multiplexer, multiplexing method, and LD module using outside-reflecting double mirrors

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311358A (en) * 2001-04-12 2002-10-23 Ricoh Co Ltd Optical scanning method and optical scanner and image forming device
US7369287B2 (en) 2004-10-14 2008-05-06 Samsung Electronics Co., Ltd. Mirror positioning structure for compensation of skew and bow and laser scanning unit employing the same
JP2008065045A (en) * 2006-09-07 2008-03-21 Ricoh Co Ltd Light source device, optical scanner and image forming apparatus
WO2014034428A1 (en) * 2012-08-29 2014-03-06 株式会社フジクラ Light guiding device, method for producing same, and ld module
US9645389B2 (en) 2012-08-29 2017-05-09 Fujikura Ltd. Light guiding device, method for producing same, and LD module
US9774171B2 (en) 2012-12-27 2017-09-26 Fujikura Ltd. Multiplexer, multiplexing method, and LD module using outside-reflecting double mirrors
JP2015111177A (en) * 2013-11-15 2015-06-18 株式会社フジクラ Light guide device, manufacturing method, and ld module
US20160252679A1 (en) * 2013-11-15 2016-09-01 Fujikura Ltd. Light guide device, manufacturing method, and laser diode module
US10379291B2 (en) 2013-11-15 2019-08-13 Fujikura Ltd. Light guide device, manufacturing method, and laser diode module

Similar Documents

Publication Publication Date Title
US4978197A (en) Beam-combining laser beam source device
US6642535B2 (en) Apparatus for reading information stored in a memory layer and an X-ray cassette for use with the apparatus
JPS6245269A (en) X-ray image former
CN110477874B (en) An intraoral imaging scanner
JPS61208023A (en) Semiconductor laser beam source device
US4969699A (en) Light beam scanning apparatus
JPS61212819A (en) Semiconductor laser light source device
JPH0281042A (en) Radiograph information reader
US5083023A (en) Composite light source unit and scanning device
JPH06250301A (en) Radiation image information reader
CN211560139U (en) Intraoral image scanner
JP2631666B2 (en) Laser light source device for multiplexing
JPH0228613A (en) Semiconductor laser beam source unit
JPH0260162B2 (en)
JPS61212820A (en) Semiconductor laser light source device
JPS60264158A (en) Semiconductor laser scanning device
JPH01125887A (en) Multi-laser beam source device
JPH01178914A (en) Source device for multiple semiconductor laser light source device
JPH0261611A (en) Laser light source device for multiplexing
JPH0547084B2 (en)
JP2582560B2 (en) Radiation image information reading and reproducing device
JPS6243619A (en) Semiconductor laser light source device
JPS6184619A (en) Memory type image information reader
JPS61235813A (en) Multiple light source device
JPH06282023A (en) Latent image reader