JPS61198716A - Production unit for thin-film - Google Patents

Abstract

PURPOSE:To deposit multilayer thin-films continuously onto a substrate by turning a cylinder, on an outer circumference thereof a substrate support section is mounted, transporting the substrate and disposing a reaction chamber and a preparation chamber on the outer circumference so as to be communicated in succession through narrow clearances. CONSTITUTION:He is introduced to each reaction chamber 11 (111-113), a preparation chamber 12 and separating sections 17 (171-173), and a substrate is fitted to the preparation chamber 12. He is stopped,a the inside of the chamber 12 is evacuated to 10<-6>Torr or less, the substrate is heated at a fixed temperature, and several reaction chamber 11 is supplied with required gases from gas introducing systems 15 (151-153), 16 (161-164), and kept at 1Torr or more. RF power 18 (181-183) is applied in respective reaction chamber and glow discharge is started, a cylinder 13 is turned, the substrate 144 in the preparation chamber 12 is transferred to the reaction chamber 111 through the separating section 171, and a P-type alpha-Si:C:H film is deposited in the reaction chamber 111, an I-type alpha-Si:H film in the reaction chamber 112 and an N-type Si film in the reaction chamber 113. Raw material gases are stopped, and changed over to He, heating is also suspended, and the substrate is cooled, and extracted from the preparation chamber 12. According to the constitution, a substrate transport mechanism is simplified, and multilayer thin-films having high quality can be formed continuously onto the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for manufacturing 1lillI, and more particularly to an apparatus for continuously and controllably forming multilayer thin films.

[Technical background of the invention and its problems]

Various electronic devices and photoelectric devices are manufactured by laminating multiple layers of amorphous semiconductor thin films. To form an amorphous silicon film containing hydrogen as an amorphous semiconductor, for example, a method of glow discharge decomposition of a gas such as 3iH4 is usually used. In this case, in order to form a multilayer semiconductor film using a glow discharge decomposition apparatus having one reaction chamber, it is necessary to introduce the necessary raw material gas into the reaction chamber each time each thin film is formed. In this method, in order to avoid interactions (contamination) between films, the remaining LC gas in the reaction chamber is sufficiently exhausted after one thin film is deposited, and the next raw material gas is introduced. ■Therefore, continuous discharge is not possible.■
Furthermore, it has been difficult to efficiently produce multilayer thin film devices with excellent characteristics because the discharge must be turned on and off before and after gas replacement.

Recently, several techniques have been proposed for continuously forming multilayer semiconductor thin films to reduce mouth irritation. FIG. 6 is an example. This device connects a plurality of reaction chambers 511 and 512 with a separation chamber 54 in between, and has a preparation chamber 52 at one end for introducing the substrate and a take-out space 53 for taking out the substrate at the other end. Constructed by connecting. A gout valve is provided between each chamber to transfer the substrate. In this apparatus, a substrate is first introduced into the preparation chamber 52, the gassho is sufficiently evacuated, a gate valve between the preparation chamber 52 and the reaction chamber 512 is opened, and one substrate is transferred to the reaction chamber 512. Then, an appropriate raw material gas is introduced into the reaction chamber 512 to a predetermined pressure, and RF power is applied to decompose the raw material gas into 1
Form l191. After the il film is formed, the discharge in the reaction chamber 512 is stopped, the reaction chamber 512 is evacuated to a high vacuum, and the gate valve between the separation seedlings 54 is opened and the substrate is transferred through the separation chamber 54. Transfer to the next reaction chamber 511.

Then, in this reaction chamber 511, the next thin film is formed in the same manner as in the previous reaction chamber 512. In this way, a thin film having the required characteristics is continuously deposited, and finally the substrate is taken out from the seedling 53.

FIG. 7 shows another example of an apparatus for continuously forming a thin film on a film substrate wound into a roll.

This device can perform multiple reactions for ¥611,612. ... are connected through a narrow gap separation part, and semi-@
A to 62 and a substrate take-out 63 are provided, and the film substrate is mounted between the preparation chamber 62 and the take-out 63 in communication with the entire reaction chamber. Each reaction chamber is connected to a gas inlet, an exhaust port, and an RF power source, so that necessary thin films are sequentially formed in each reaction chamber while the film substrate is being transferred.

The apparatuses shown in FIGS. 6 and 7 sequentially form films in multiple reaction chambers, so one reaction! This method is more effective in preventing unnecessary raw material gases from being mixed in than in the case of forming a plurality of layers. However, since the apparatus shown in FIG. 6 utilizes the opening and closing of a gate valve to transfer the substrate, it is still necessary to temporarily stop the discharge and evacuate the reaction chamber after each thin film forming process. Although not shown in the figure, the mechanism for transferring the substrate between the reaction chambers is complicated, and if there are a large number of reaction chambers, the entire apparatus becomes very large in size. Furthermore, the system shown in Fig. 7 is effective only in the case of film substrates, and requires a complicated transfer mechanism in order to sequentially process individual substrates in each reaction chamber, resulting in a large-scale apparatus. .

CObject of the Invention The present invention provides a /1 film manufacturing apparatus that has a simple substrate transfer mechanism and can be configured compactly as a whole, and that enables continuous formation of high-quality multilayers 11 on a substrate. The purpose is to provide

[Summary of the invention]

The thin film manufacturing apparatus according to the present invention includes a plurality of reaction chambers connected in series, into which raw material gas is introduced to form a thin film on a predetermined substrate, and a preparation chamber into which substrates to be fed into and out of these reaction chambers are taken in and out. and a substrate transfer mechanism that continuously transfers the substrate between the preparation chamber and the plurality of reaction chambers. In such a basic configuration, the present invention provides that the substrate transfer mechanism is constituted by a rotationally driven cylindrical body having a plurality of substrate support parts on the outer periphery, and the plurality of reaction chambers and preparation chambers are connected to the substrate transfer mechanism. The device is characterized in that it is arranged so as to surround the substrate transfer mechanism and communicate with each other sequentially through a narrow separation part with the outer periphery of the substrate transfer mechanism as one wall.

〔Effect of the invention〕

In the apparatus according to the present invention, the substrate transfer mechanism is a cylindrical body,
The outer periphery directly serves as the substrate support portion. Therefore, the structure of the linear motion and substrate receiving is very simple compared to the conventional substrate transfer mechanism which requires transfer. Further, since the plurality of reaction chambers are arranged so as to surround the substrate transfer mechanism as one wall, the entire apparatus becomes very compact. In addition, the transfer of substrates between reaction chambers does not require the opening and closing of gate valves, and is carried out through the narrow separation section between the reaction chambers. For example, by forming a gas curtain in this separation section, The process can be carried out quickly without stopping the discharge in each reaction chamber and without mixing the raw material gases, reducing wasted time and producing high-quality multi-layer 71
It becomes possible to form a pus device.

[Embodiments of the invention]

The present invention will be explained in detail below.

FIG. 1 is a perspective view showing a thin film manufacturing apparatus according to one embodiment.

FIG. 2 is a cross-sectional view thereof, FIG. 3 is a vertical cross-sectional view of the reaction chamber, and FIG. 4 is a vertical cross-sectional view of the separation section.

In these figures, 11 (111, 112.

113) is a reaction chamber, 12 is a preparation chamber for loading and unloading substrates, and these are arranged in a ring shape and connected in series. A substrate transfer mechanism 13 made of a cylindrical body is located in the center of these reaction chambers 11 and preparation chambers 12.
is located. The substrate transfer mechanism 13 is driven to rotate at any angle in any direction, and its outer wall constitutes one wall of the reaction chamber 11 and the preparation chamber 12.

Further, a plurality of substrate support parts are formed on the outer periphery of the substrate transfer mechanism 13, corresponding to each reaction chamber 11 and preparation chamber 12, and the substrates 14 (141, 142) are formed here.

143.144) are placed. The substrate support part holds the M plate 14 in this manner, and is also capable of heating the M plate 14 to a predetermined temperature by means of a heating member 22 through the center of the cylindrical body, as shown in FIG.

Similarly, a refrigerant passage 23 is also provided through which refrigerant flows through the center of the cylindrical body to the substrate support section.

Inside each reaction chamber 11 is a source gas introduction system 15 (151, 152) that also serves as an electrode facing the substrate 14.

153) is provided. This raw material gas introduction system 15 is designed to introduce the raw material gas almost toward the substrate 14. In addition, IIF power supply 18 is connected to this raw material gas introduction system 15.
(18t, 182.183) are connected and board 1
By using 4 as a counter electrode and supplying RF power thereto, the raw material gas is decomposed by glow discharge in a capacitive manner. Each reaction chamber 11 and preparation chamber 12 also has a high vacuum exhaust system 20 as shown in FIG.
A rotary pump is connected to enable evacuation to a high vacuum of, for example, 10-'' torr or less.

One exhaust system during film formation includes, for example, ON/OF
A mechanical booster pump and a rotary pump are connected through a valve and a pressure control valve. Semi-In! 12 is provided with a door 24 for taking in and out substrates.

There is a structure for substrate transfer between each reaction chamber 11 and preparation chamber 12.
A separation part 17 (171, 172° 173, 174) is formed which connects the winter solstice with a narrow gap using 3 as one wall. Each of these separations 117 includes an inert gas introduction system 16 (16t).

162, 163, 164) are provided so that an inert gas is blown onto the substrate transfer mechanism 13 side to form a gas curtain as shown in FIG.

That is, by adjusting the flow rate of the gas blown into the separation section 17 to make the pressure in this section higher than the internal pressure of the reaction chamber 11, this inert gas flows from the separation section 17 into the reaction chambers 11 on both sides.
The gas flows through the exhaust system 19 of each reaction chamber 11 and is exhausted together with the raw material gas and the like. The flow rate of the inert gas introduced into the separation section 17 can be set to 1% or less of that of the source gas, thereby preventing an adverse effect on the properties of the thin film formed in the reaction chamber 11. I can do it.

An example of manufacturing a specific multilayer thin film device using the apparatus configured as described above will be described next.

The first example is amorphous silicon (A-8
i) and a microcrystalline silicon film is formed. With all exhaust system valves closed, each reaction chamber 11. Preparation room 1
2 and the separation section 17 as an inert gas, and the pressure is set to atmospheric pressure. Open m24 of the preparation room 12 and attach the board to the board support part. The door 24 is closed to stop the introduction of gas, and the valve 21 of the high vacuum exhaust system 20 is opened to evacuate the entire system to a high vacuum of 10-' torp or less. This heater heats the substrate to a predetermined temperature of 0, for example 250.
Heat to ℃.

After sufficiently evacuating the whole in this way, close the valve 21 of the high vacuum gas exhaust system 20, switch to the gas exhaust system 19 side,
At the same time, the required gas starts flowing through the gas introduction systems 15 and 16. In the reaction chamber 111, p-type a-8i:C:Hll
Gas necessary to form ll S iH4, CH4, 82
Flow H& and H2 at a ratio of 100:20:1:10. The next anti-IE to 112 has type 1 a-8i: Hllll
Flow the gas SiH+ necessary to form . Furthermore, in the next reaction chamber 113, gases SiH+, PHs and H2 necessary for forming an n-type microcrystalline silicon film are added in a ratio of 100:1:500.
Flow at the rate of The pressure in each reaction chamber 11 is 1 t.
Adjust the Y4-node valve in the exhaust system so that it is orr.

At the same time, He gas is flowed as an inert gas into the preparation chamber 12 and the separation section 17, and the pressure is maintained at 1 torr in the preparation chamber 12, and the pressure is adjusted to 1 torr or more in the separation section 17.

Wait until the gas state and substrate temperature stabilize, and then apply RF power to each reaction chamber to start glow discharge. R
The F power density is, for example, 0.01 to I W with respect to the substrate.
/ci. When the discharge is stable, the substrate transfer device #113 is operated to move the substrate in the preparation chamber 12 to the reaction chamber 11 via the separation section 171. This deposits p-type a-8i:C:HQI on the substrate. After a predetermined thickness, for example 100 a-8i:C:H films, is deposited, the substrate is moved to the next reaction chamber 112.

Here, I type A-8i: HWA is made to a specified thickness, for example, 5000 mm.
Deposit people. Furthermore, the substrate is moved to the next reaction chamber 113, where an n-type microcrystalline silicon film is deposited to a predetermined thickness, for example, 500 nm.
Deposit people.

After this, the discharge in the reaction chamber is stopped, the supply of raw material gas is stopped, and the supply of raw material gas is switched to inert gas. Then, the heating of the substrate is stopped, and the substrate is cooled and taken out from the preparation chamber 12.

Thus, according to this embodiment, the substrates are sequentially transferred to each reaction chamber while maintaining the discharge in each reaction chamber, and
A PLN diode with excellent characteristics consisting of I and microcrystalline 3I films could be easily manufactured.

As a second example, a-8i with pnpn... junction:
An example of manufacturing a multilayer structure device using HMI will be described. In this case, the reaction chamber 111 contains S as in the first example.
Introducing iH+, CH+, B2H6 and H2, where p
A type a-3i:)-1 film can be formed. Further, He gas is supplied to the next reaction chamber 112 to prevent glow discharge from occurring. The next reaction chamber 113 contains SiH+, PH
3 and H2 at a ratio of 100 to 1:10 to form an n-type a
-8i: Allow formation of Hllll.

After making the same preparations as in the first example, anti-iE? 1
100 p-type a-8i:Hlll films were deposited in 1t, and the substrate was transferred to the reaction chamber 113 by rotating the substrate transfer mechanism 13 clockwise, where 100 n-type a-3i:l-1 films were deposited. Accumulate people. Next, the substrate transfer mechanism is rotated in the opposite direction to return the substrate to the reaction chamber 11t, and the p-type a-8i is transferred again.
Deposit 100 H1ll. Thereafter, similar operations were repeated to form a multilayer device having a pnpn... structure. Impurities were easily removed at the joints between each layer, and excellent properties were obtained.

The present invention is not limited to the above embodiments.

FIG. 5 shows the configuration of one reaction chamber of another embodiment, corresponding to the cross section of FIG. In this embodiment, the gas introduction system 15
Separately, counter electrodes 25 and 26 are provided perpendicularly to the substrate 14.
has been established. Even with such a configuration, the same effects as in the previous embodiment can be obtained.

Furthermore, in the above embodiment, film formation was mainly explained using SiH+ as a raw material, but GeH+.

The present invention is also effective in the case of film formation using CH4, NH3, 8i (CH3)4, etc. as a raw material gas.

Further, in the above embodiments, a case has been described in which a high frequency electric field is used as a means for decomposing the raw material gas, but the present invention can be similarly applied to an apparatus that utilizes decomposition by applying light energy or thermal energy.

[Brief explanation of drawings]

Fig. 1 is a perspective view showing a thin film manufacturing apparatus according to an embodiment of the present invention, Fig. 2 is a cross-sectional view thereof, Figs. 3 and 4 are longitudinal sectional views of the reaction chamber section and separation section, respectively. FIG. 5 is a diagram showing the configuration of a reaction chamber in the embodiment of the present invention, corresponding to FIG. 2, and FIGS. 6 and 7 are diagrams showing an example of a conventional thin film manufacturing apparatus. 11 (111, 112, 113)...reaction chamber, 12.
...Preparation room, 13...Substrate transfer mechanism, 14 (141
, 142, 143, 144)...Substrate, 15 (15
r, 152.153)...electrode and gas introduction system, 1
6 (161,162,163,164)...Gas introduction system, 17 (171,172,173°174)...
Separation unit, 18 (18r, 182. 183)...RF power supply, 19.20...Gas exhaust system, 21...Valve, 22...Substrate heating mechanism, 23.
...refrigerant passage, 24...humiliation, 25.26...electrode. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 4 Figure 6 Figure 7

Claims (2)

[Claims] (1) A plurality of reaction chambers connected in series into which raw material gas is introduced to form a thin film on a predetermined substrate, a preparation room where the substrates to be sent into and out of these reaction chambers are taken in and out, and this preparation room. a substrate transfer mechanism that continuously transfers the substrate between the plurality of reaction chambers, the substrate transfer mechanism is configured of a rotationally driven cylindrical body having a plurality of substrate supports on the outer periphery, and the substrate transfer mechanism A thin film manufacturing apparatus characterized in that the chamber and the preparation chamber are arranged so as to surround the substrate transfer mechanism and communicate with each other sequentially through a narrow separation part with the outer periphery of the substrate transfer mechanism as one wall. (2) The thin film manufacturing apparatus according to claim 1, wherein a gas curtain is formed in a separation section between the plurality of reaction chambers and preparation chambers.