JPS61188893A - Manufacture of thin film light emitting element - Google Patents
Manufacture of thin film light emitting elementInfo
- Publication number
- JPS61188893A JPS61188893A JP60028105A JP2810585A JPS61188893A JP S61188893 A JPS61188893 A JP S61188893A JP 60028105 A JP60028105 A JP 60028105A JP 2810585 A JP2810585 A JP 2810585A JP S61188893 A JPS61188893 A JP S61188893A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light emitting
- thin film
- layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（技術分野〉
本発明は、薄膜発光素子の製造技術に関し、特に薄膜発
光層の両主面を誘電体層で被覆した三層構造を１対の電
極間に介設し、交流電界の印加に応答してＥＬ （Ｅｌ
ｅｃｔｒｏ Ｌｕｍ１ｎｅｓｃｅｎｃｅ）発光を生起
する薄膜発光素子における誘電体層の製造方法に関する
ものである。Detailed Description of the Invention (Technical Field) The present invention relates to a technology for manufacturing a thin film light emitting device, and in particular, a method for manufacturing a thin film light emitting device in which a three-layer structure in which both main surfaces of a thin film light emitting layer are covered with dielectric layers is interposed between a pair of electrodes. and in response to the application of an AC electric field, EL (El
The present invention relates to a method for manufacturing a dielectric layer in a thin film light emitting device that generates light (electroluminescence).
〈従来技術とその問題点２
交流電界の印加に応答してＥＬ光発光呈する薄膜発光層
を誘電体層でサンドイッチ状に挟設した三層構造薄膜発
光素子は高輝度特性を利用して穫々の表示装置や面発光
源等に利用されている。第１図はこの三層構造薄膜発光
素子の基本構造を示す構成図である。ガラス等の透光性
基板１上に透明電極、２が帯状に複数本配列され、この
上にＳｉｇｈ膜３とＳｉ−Ｎ膜４から成る下部誘電体層
、ＺｎＳ発光母材にＭｎ等の活性物質をドープした発光
層５．Ｓｉ−Ｎ膜６から成る上部誘電体層が順次積層さ
れて三層構造部が構成されている。Ｓｉ−Ｎ膜６上には
上記透明電極２と直交する方向に帯状のＡｔから成る背
面電極７が配列され、背面電極７と透明電極２は交流電
源８に接続されてこの薄膜発光素子が駆動される。<Prior art and its problems 2 A three-layer structure thin-film light-emitting device in which a thin-film light-emitting layer that emits EL light in response to the application of an alternating current electric field is sandwiched between dielectric layers has been successfully developed by taking advantage of its high luminance characteristics. It is used in display devices, surface emitting sources, etc. FIG. 1 is a block diagram showing the basic structure of this three-layer thin film light emitting device. A plurality of transparent electrodes 2 are arranged in a band shape on a transparent substrate 1 made of glass or the like, and on top of this, a lower dielectric layer consisting of a Sigh film 3 and a Si-N film 4 is formed, and an active layer such as Mn is applied to a ZnS light-emitting base material. 5. Luminescent layer doped with substance. An upper dielectric layer made of a Si--N film 6 is sequentially laminated to form a three-layer structure. A strip-shaped back electrode 7 made of At is arranged on the Si-N film 6 in a direction perpendicular to the transparent electrode 2, and the back electrode 7 and the transparent electrode 2 are connected to an AC power source 8 to drive this thin film light emitting device. be done.
上記構造の薄膜発光素子において、上部誘電体層として
は、絶縁耐圧、誘電率、発光特性等の観点から、非晶質
の絶縁膜として知られているＳｉ−Ｎ（窒化シリコン）
膜あるいはＳ ｉ−Ｎ膜とＡｔｚＯ３（アルミナ）膜の
複合膜が用いられている。このＳｉ−Ｎ膜は、通常Ｓｉ
（シリコン）ターゲットをＮ２（窒素）ガスでスパッ
タリングして成膜され、ＳｉｓＮ４を基本形として形成
される。In the thin film light emitting device having the above structure, the upper dielectric layer is made of Si-N (silicon nitride), which is known as an amorphous insulating film from the viewpoint of dielectric strength, dielectric constant, light emission characteristics, etc.
A film or a composite film of an Si-N film and an AtzO3 (alumina) film is used. This Si-N film is usually made of Si
The film is formed by sputtering a (silicon) target with N2 (nitrogen) gas, and is formed using SisN4 as its basic shape.
しかしながら、このようにして得られたＳｉ−Ｎ膜は次
のような欠点を内包している。However, the Si-N film obtained in this way has the following drawbacks.
（１）発光層上の微小突起や異物に対するカバレージが
悪い。(1) Poor coverage of microprotrusions and foreign substances on the light emitting layer.
（２）成膜速度が〜２００Ａ／分と遅く、また高真空を
必要とするため、装置コストが高くなる。(2) The film formation rate is slow at ~200 A/min, and high vacuum is required, resulting in high equipment costs.
上記（１）の欠点によって、発光層とＳｉ−Ｎ膜との界
面に湿気が浸透し易く、層間剥離の原因となる。Due to the drawback (1) above, moisture easily permeates the interface between the light emitting layer and the Si--N film, causing delamination.
また（２）の欠点は量産性を阻害する要因となる。Furthermore, the drawback (2) becomes a factor that hinders mass production.
Ｓｉ−Ｎ膜の成膜法としては、上記スパッタリング法以
外にプラズマＣＶＤ法を用いることができる。プラズマ
ＣＶＤ法を用いる場合には、通常ＳｉＨｎ（シラン）と
ＮＨ３（アンモニア）の混合ガスあるいは“必要に応じ
てこれに若干のＮ２ガスをキャリアガスとして加えた混
合ガスよｐｓｉ−Ｎの成膜が行なわれる。得られるＳ
ｉ−Ｎ膜はカバレージが良好で成膜速度も速いという利
点を有するが、反面ＳｉＨ４とＮＨｓの混合ガス系では
原料ガス中に含まれるＨ２（水素）の量が多く、Ｓｉ−
Ｎ膜中に多量のＳ ｉ −Ｈｎ ＋Ｎ−Ｈｎの如き水素
化物が含有される結果となる。またプラズマ中で生成さ
れる水素ラジカルも多く、この水素ラジカルによって下
地の発光層がダメージを受ける。即ち、水素ラジカルと
発光層母材のＺｎＳが反応してＺｎＳ発光層表面のＳ（
イオウ）がＨ２Ｓとなって奪われ、発光層表面にＳ−ペ
イキャンシイ（ｖａｃａｎｃｙ ）が形成される。その
結果、ＳｉＨ４とＮＨ３の混合ガスを用いたプラズマＣ
ＶＤ法による５ｔ−Ｎ膜を上部誘電体層とした薄膜発光
素子は、発光輝度が低下することとなる。As a method for forming the Si-N film, a plasma CVD method can be used in addition to the sputtering method described above. When using the plasma CVD method, a psi-N film is usually formed using a mixed gas of SiHn (silane) and NH3 (ammonia), or a mixed gas in which a small amount of N2 gas is added as a carrier gas if necessary. carried out. Obtained S
The i-N film has the advantage of good coverage and fast film formation speed, but on the other hand, in a mixed gas system of SiH4 and NHs, the amount of H2 (hydrogen) contained in the raw material gas is large, and the Si-
This results in a large amount of hydrides such as S i -Hn +N-Hn being contained in the N film. Furthermore, many hydrogen radicals are generated in the plasma, and the underlying light-emitting layer is damaged by these hydrogen radicals. That is, hydrogen radicals react with ZnS, which is the base material of the light emitting layer, and S(
Sulfur) is converted into H2S and taken away, and an S-vacancy is formed on the surface of the light emitting layer. As a result, plasma C using a mixed gas of SiH4 and NH3
A thin film light emitting device using a 5t-N film formed by the VD method as an upper dielectric layer has a reduced luminance.
〈発明の目的及び概要〉
本発明は上述の問題点に鑑み、発光層を下地層としてこ
の上に被覆される誘電体層を５ｔ−Ｎ膜で形成する際に
、ＳｉＨ４（シラン）とＮ ２ （窒素）の混合ガスを
用いたプラズマＣＶＤ法を利用して５ｔ−Ｎ膜を成膜す
ることによシ、耐湿性、量産性及び輝度特性の諸条件を
満足する薄膜発光素子を作製することのできる製造技術
を提供することを目的とする。<Objective and Summary of the Invention> In view of the above-mentioned problems, the present invention uses SiH4 (silane) and N2 when forming a dielectric layer coated on the light-emitting layer as a base layer with a 5t-N film. By forming a 5t-N film using a plasma CVD method using a mixed gas of (nitrogen), a thin film light emitting device that satisfies various conditions of moisture resistance, mass production, and brightness characteristics is manufactured. The purpose is to provide manufacturing technology that enables
〈実施例〉
以下、再度第１図を参照しながら本発明の１実施例につ
いて詳説する。<Example> Hereinafter, an example of the present invention will be described in detail with reference to FIG. 1 again.
ガラス基板ｌ上に透明導電膜ＣＩＴＯ膜）を帯状成形し
た複数本の透明電極２をパターン形成する。次に、スパ
ッタリング法または真空蒸着法等ｆｓｉ０ｚ膜３を厚さ
２００〜８０ｏＡ程度に堆積し、この上に更にスパッタ
リング法でＳｉ−Ｎ膜４を厚さ１０００〜３０００Ａ程
度積層して下部誘電体層とする。ＳｉＯｚ膜３は下部誘
電体層と透明電極２間の密着力を強固にするために介層
されるものである。Ｓｉ−Ｎ膜種上には発光層５を層設
する。この発光層５の形成は、発光層５の母材となるＺ
ｎＳに発光センターとなるＭｎ ＋ Ｄｙ ｌ Ｔｍあ
るいはこれらの化合物を添加した焼結ベレットを電子ビ
ーム蒸着することにより行なわれる。その膜厚は６００
０〜８０００Ａ程度に設定し、成膜後真空アニールする
。次にこの発光層５を下地層としてこの上にＳｉ−Ｎ膜
６から成る上部誘電体層を１５００〜３０００Ａ程度の
厚さで重畳形成し、発光層５の両主面を上下部誘電体層
で挟設した三層構造部を作製する。A plurality of transparent electrodes 2 formed by forming a transparent conductive film (CITO film) into a band shape are formed on a glass substrate l. Next, an fsi0z film 3 is deposited to a thickness of about 200 to 80oA using a sputtering method or a vacuum evaporation method, and an Si-N film 4 is further laminated to a thickness of about 1000 to 3000A by a sputtering method on top of this to form a lower dielectric layer. shall be. The SiOz film 3 is interposed to strengthen the adhesion between the lower dielectric layer and the transparent electrode 2. A light emitting layer 5 is provided on the Si--N film. The formation of this light-emitting layer 5 involves the use of Z, which is the base material of the light-emitting layer 5.
This is carried out by electron beam evaporation of a sintered pellet in which Mn + Dy l Tm or a compound thereof is added to nS to serve as a luminescent center. Its film thickness is 600
The voltage is set at about 0 to 8000 A, and vacuum annealing is performed after film formation. Next, an upper dielectric layer made of a Si-N film 6 is formed to have a thickness of about 1500 to 3000 Å on this light emitting layer 5 as a base layer, and both main surfaces of the light emitting layer 5 are covered with the upper and lower dielectric layers. A three-layer structure sandwiched between the two layers is prepared.
ここで、上部誘電体層となるＳｉ−Ｎ膜６は５ｔ）ｉ４
（シラン）とＮ２（窒素）の混合ガスを用いたプラズマ
ＣＶＤ法によって成膜する。ＳｉＨ４とＮ２の混合ガス
を原料ガスとするプラズマＣＶＤ法では、原料ガス中の
水素源がＳｉＨ４のみであるため、プラズマ中で生成す
る水素ラジカルの量が少なく、従来のＳ ｉ Ｈ４ＮＨ
３系原料ガスで見られた様なＺｎＳ発光層５表面のダメ
ージは抑制される。従って発光層５の発光輝度特性は高
く維持される。Here, the Si-N film 6 serving as the upper dielectric layer is 5t)i4
The film is formed by a plasma CVD method using a mixed gas of (silane) and N2 (nitrogen). In the plasma CVD method using a mixed gas of SiH4 and N2 as a raw material gas, the hydrogen source in the raw material gas is only SiH4, so the amount of hydrogen radicals generated in the plasma is small, and compared to the conventional Si H4NH
Damage to the surface of the ZnS light emitting layer 5, which was observed with the 3-based source gas, is suppressed. Therefore, the emission brightness characteristics of the light emitting layer 5 are maintained high.
また、ＳｉＨ４Ｎ２系原料ガスを用いたプラズマＣＶＤ
法による５ｔ−Ｎ膜６もカバレージが良好で膜欠陥も少
なく耐湿保護膜として優れていることが確かめられた。In addition, plasma CVD using SiH4N2-based raw material gas
It was confirmed that the 5t-N film 6 produced by the method also had good coverage, few film defects, and was excellent as a moisture-resistant protective film.
成膜速度も２００〜３００Ａ／分程度の値を有しスパッ
タリング法の成膜速度よシも速い。この成膜速度は装置
の改良や条件の変更によって更に速くすることが可能で
ある。The film forming rate is also about 200 to 300 A/min, which is faster than that of the sputtering method. This film formation rate can be further increased by improving the equipment or changing the conditions.
上記方法によって成膜されたＳｉ−Ｎ膜６は膜欠陥が少
ないため、この上にＡ ／−２０ａ等の金属酸化膜を重
畳させる必要がなく、直接Ａｔ等の背面電極７をパター
ン形成することができる。背面電極７はＡｔ等の金属膜
を成膜した後、透明電極２と直交する方向に帯状成形さ
れ、透明電極２とともにマトリックス電極構造を構成す
る。背面電極７と透明電極２は交流電源８に接続されて
発光層５に交流電界を印加し、この交流電界の印加に応
答して発光層５よシＥＬ発光が生起される。Since the Si-N film 6 formed by the above method has few film defects, there is no need to superimpose a metal oxide film such as A/-20a on it, and a back electrode 7 such as At can be directly patterned. I can do it. After forming a metal film such as At, the back electrode 7 is formed into a strip shape in a direction perpendicular to the transparent electrode 2, and forms a matrix electrode structure together with the transparent electrode 2. The back electrode 7 and the transparent electrode 2 are connected to an AC power source 8 to apply an AC electric field to the light emitting layer 5, and in response to the application of the AC electric field, the light emitting layer 5 generates EL light.
第２図は薄膜発光素子の印加電圧対発光輝度特性を示す
特性図である。図中の実線■はＳｉＨ４−Ｎ２系原料ガ
スを用いてプラズマＣＶＤ法でＳｉ−Ｎ膜６を成膜した
上記実施例に対応する薄膜発光素子の特性曲線である。FIG. 2 is a characteristic diagram showing the applied voltage versus emission brightness characteristic of the thin film light emitting device. The solid line (■) in the figure is a characteristic curve of the thin film light emitting device corresponding to the above embodiment in which the Si-N film 6 was formed by plasma CVD using SiH4-N2 based source gas.
破線■はＳ ｉ Ｈ４ＮＨｓ系原料ガスを用いてプラズ
マＣＶＤ法で５ｔ−Ｎ膜６を成膜した薄膜発光素子の特
性曲線である。一点鎖線■はスパッタリング法によりＳ
ｉ−Ｎ膜６を成膜した薄膜発光素子の特性曲線である。The broken line (■) is a characteristic curve of a thin film light emitting device in which a 5t-N film 6 was formed by plasma CVD using SiH4NHs-based raw material gas. The dashed line ■ is S by the sputtering method.
It is a characteristic curve of a thin film light emitting device in which an i-N film 6 is formed.
Ｓｉ−Ｎ膜６以外の素子作製条件は全て同一である。ま
た薄膜発光素子の駆動条件は交流電界１００Ｈｚ、４０
μの対称パルス駆動とした。上記実施例によシ作製され
た薄膜発光素子はスパッタリング法によシＳｉ−Ｎ膜６
を成膜した素子と同程度の輝度特性を呈し、５ＩＨ４Ｎ
Ｈ３系原料ガスを用いてプラズマＣＶＤ法によりＳｉ−
Ｎ膜６を成膜した薄膜発光素子よシはるかに優れている
。All device manufacturing conditions other than the Si-N film 6 are the same. The driving conditions for the thin film light emitting device are AC electric field of 100Hz, 40Hz.
It was driven by a symmetrical pulse of μ. The thin film light emitting device manufactured according to the above embodiment was manufactured using a Si-N film 6 by a sputtering method.
5IH4N
Si-
It is far superior to the thin film light emitting device in which the N film 6 is formed.
尚、上記実施例において、プラズマＣＶＤ法による５ｔ
−Ｎ膜６の成膜中にＮ２０を導入して上部誘電体層をＳ
ｉ−０−Ｎ（シリコンオキシナイトライド）膜に置き換
えても同様の効果を得ることができる。In addition, in the above example, 5t by plasma CVD method
-N20 is introduced during the formation of the N film 6 to form the upper dielectric layer.
A similar effect can be obtained by replacing it with an i-0-N (silicon oxynitride) film.
〈発明の効果〉
以上詳説した如く、本発明によれば発光層に対するカバ
レージが良好な誘電体層を有し耐湿性の顕著なかつ発光
輝度特性の高い薄膜発光素子を作製することができる。<Effects of the Invention> As explained in detail above, according to the present invention, it is possible to produce a thin film light-emitting element having a dielectric layer with good coverage of the light-emitting layer, excellent moisture resistance, and high luminance characteristics.
また、成膜速度も向上するため量産に適し、安価な薄膜
発光素子が得られる。Furthermore, since the film formation rate is improved, an inexpensive thin film light emitting device suitable for mass production can be obtained.
第１図は薄膜発光素子の基本的構造を示す構成図である
。第２図は薄膜発光素子の印加電圧対発光輝度特性を示
す特性説明図である。FIG. 1 is a block diagram showing the basic structure of a thin film light emitting device. FIG. 2 is a characteristic explanatory diagram showing applied voltage versus luminance luminance characteristics of a thin film light emitting device.
Claims (1)
該発光層を被覆する誘電体層とを１対の電極間に介設し
て成る薄膜発光素子の製造方法において、前記発光層を
下地層としてシランと窒素の混合ガスを原料にプラズマ
ＣＶＤ法でＳｉ−Ｎ膜を堆積し、該Ｓｉ−Ｎ膜を前記誘
電体層としたことを特徴とする薄膜発光素子の製造方法
。1. A method for manufacturing a thin film light emitting device comprising a light emitting layer that generates EL light emission in response to the application of an electric field and a dielectric layer covering the light emitting layer interposed between a pair of electrodes, wherein the light emitting layer is formed as a base layer. A method for manufacturing a thin film light emitting device, characterized in that an Si--N film is deposited by plasma CVD using a mixed gas of silane and nitrogen as a raw material, and the Si--N film is used as the dielectric layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60028105A JPS61188893A (en) | 1985-02-14 | 1985-02-14 | Manufacture of thin film light emitting element |
| US07/023,912 US4721631A (en) | 1985-02-14 | 1987-03-09 | Method of manufacturing thin-film electroluminescent display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60028105A JPS61188893A (en) | 1985-02-14 | 1985-02-14 | Manufacture of thin film light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188893A true JPS61188893A (en) | 1986-08-22 |
| JPH0572078B2 JPH0572078B2 (en) | 1993-10-08 |
Family
ID=12239528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60028105A Granted JPS61188893A (en) | 1985-02-14 | 1985-02-14 | Manufacture of thin film light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61188893A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6771019B1 (en) | 1999-05-14 | 2004-08-03 | Ifire Technology, Inc. | Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202687A (en) * | 1984-03-27 | 1985-10-14 | 日本電気株式会社 | Thin film electroluminescent element |
| JPS60253193A (en) * | 1984-05-29 | 1985-12-13 | アルプス電気株式会社 | Electroluminescence unit of amorphous silicon and method of producing same |
-
1985
- 1985-02-14 JP JP60028105A patent/JPS61188893A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202687A (en) * | 1984-03-27 | 1985-10-14 | 日本電気株式会社 | Thin film electroluminescent element |
| JPS60253193A (en) * | 1984-05-29 | 1985-12-13 | アルプス電気株式会社 | Electroluminescence unit of amorphous silicon and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572078B2 (en) | 1993-10-08 |
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