JPS61179884A - Selective chemical working device - Google Patents
Selective chemical working deviceInfo
- Publication number
- JPS61179884A JPS61179884A JP2050485A JP2050485A JPS61179884A JP S61179884 A JPS61179884 A JP S61179884A JP 2050485 A JP2050485 A JP 2050485A JP 2050485 A JP2050485 A JP 2050485A JP S61179884 A JPS61179884 A JP S61179884A
- Authority
- JP
- Japan
- Prior art keywords
- energy beam
- selective
- plating
- chemical
- soln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000126 substance Substances 0.000 title claims abstract description 24
- 238000012993 chemical processing Methods 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 230000001629 suppression Effects 0.000 abstract 1
- 230000004304 visual acuity Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 29
- 238000009713 electroplating Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は９選択的化学加工装置に関し２例えばレーザ
などのエネルギービームを用いて選択めっきや選択エツ
チングなどを行なうものに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a selective chemical processing apparatus, and relates to an apparatus for performing selective plating, selective etching, etc. using an energy beam such as a laser.
第３図は従来の選択的電気めっき装置を示す構成図であ
る。（特許公報昭５９−１７９７号公報に記載されてい
る。）
図において、（１）は化学溶液９例えば電解めっき液（
２）が満たされているめっき槽、（３）はめつき電源。FIG. 3 is a block diagram showing a conventional selective electroplating apparatus. (This is described in Japanese Patent Publication No. 1797/1983.) In the figure, (1) indicates a chemical solution 9 such as an electrolytic plating solution (
2) a plating tank filled with (3) a plating power supply.
（４）は陽極、（５）は例えばレーザなどのエネルギー
ビーム、（６１はエネルギービーム発生器、（７）は陰
極で。(4) is an anode, (5) is an energy beam such as a laser, (61 is an energy beam generator, and (7) is a cathode.
例えばガラスや他の誘電体などの絶縁基板（８）と。and an insulating substrate (8), for example glass or other dielectric material.
絶縁基板（８１の表面に付着した薄い金属層（９）とで
構成されている。It consists of a thin metal layer (9) attached to the surface of an insulating substrate (81).
このように構成された装置で、電解めっき液（２）中で
陰極（７）と陽極（４）を対向させ、めっき電源（３）
より電圧を印加する。この電圧の印加と同期してエネル
ギービーム発生器（６）より適当な波長とエネルギー密
度を有するエネルギービーム（５）を陰極（７）上に照
射する。陰極（７）ではエネルギービーム（５）が照射
される領域でエネルギーが吸収され９局所的な加熱を生
じ、めっき速度が、熱的な効果を受けない領域のバック
グラウンドのめつき速度よりも飛躍的に増大するため２
選択的な電気めっきが行なわれる。In the apparatus configured in this way, the cathode (7) and the anode (4) are placed opposite each other in the electrolytic plating solution (2), and the plating power source (3)
Apply more voltage. In synchronization with the application of this voltage, an energy beam (5) having an appropriate wavelength and energy density is irradiated onto the cathode (7) from an energy beam generator (6). At the cathode (7), energy is absorbed in the area irradiated with the energy beam (5), causing local heating 9, and the plating rate jumps above the background plating rate in areas not affected by the thermal effect. 2.
Selective electroplating is performed.
上記のような従来の選択的電気めっき装置では。 In conventional selective electroplating equipment as mentioned above.
エネルギービームの加熱による陰極の熱拡散を制限し、
隣接領域のバックグラウンドめっきを最小に押さえるた
めには、陰極が上記のような絶縁基板上に薄い金属皮膜
を付着させて構成しなければならなかった。このため任
意の陰極材料を用いることができないという問題点があ
った。Limits thermal diffusion of the cathode due to energy beam heating,
In order to minimize background plating in adjacent areas, the cathode had to be constructed with a thin metal coating deposited on an insulating substrate as described above. For this reason, there was a problem that an arbitrary cathode material could not be used.
この発明は、かかる問題点を解決するためになされたも
ので、任意の導電性又は非導電性の陰極材料に選択めっ
きや選択エツチングなどを施すことのできる選択的化学
加工装置全提供することを目的としている。The present invention was made to solve these problems, and aims to provide a complete selective chemical processing apparatus that can perform selective plating, selective etching, etc. on any conductive or non-conductive cathode material. The purpose is
この発明に係る選択的化学加工装置は、化学溶液中に浸
積された被加工材、この被加工材の被加工部にエネルギ
ービーム発生器するエネルギービーム発生器、上記被加
工部の表面に沿って化学溶液を噴射する噴流ノズル、及
びこの噴流ノズルに化学溶液を供給するポンプを備えた
ものである。The selective chemical processing apparatus according to the present invention includes a workpiece immersed in a chemical solution, an energy beam generator that generates an energy beam on a processed portion of the workpiece, and a beam generator that generates an energy beam along the surface of the processed portion. The device is equipped with a jet nozzle that sprays a chemical solution, and a pump that supplies the chemical solution to the jet nozzle.
この発明における噴流ノズル及びポンプによって、被加
工材の被加工部の表面に化学溶液のジェット噴流が生じ
る。このジェット噴流が界面温度を定温に保つ働きをし
、エネルギービームの加熱に伴う化学溶液や被加工材の
熱拡散を抑制し２選択的化学加工の分解能を向上させる
。The jet nozzle and pump of the present invention generate a jet of chemical solution on the surface of the processed portion of the workpiece. This jet stream functions to maintain the interface temperature at a constant temperature, suppresses thermal diffusion of the chemical solution and workpiece material due to heating by the energy beam, and improves the resolution of two-selective chemical processing.
第１図はこの発明の一実施例を示す構成図であり９例え
ば選択的電気めっき装置を示す。図において、顛は噴流
ノズルで、被加工材である陰極ｔｔＳの被加工部２例え
ば被めっき部の表面に沿ってめっき液【２）をジェット
噴流として噴射する。Ｉは噴流ノズルαＱの角度を変え
て任意の陰極（Ｉりの表面個所にジェット噴流を当てる
ことができるようにされたノズル関節、ｔ１２はめっき
液循環パイプ、α３は噴流ノズルＱｌに化学溶液を供給
するポンプで２例えば循環ポンプ、α４はめっき液温度
管理装置である。また、矢印（Ａ）及び矢印（Ｂ）はめ
つき液の流れを示すもので、矢印（Ａ）ではジェット噴
流となっている。FIG. 1 is a block diagram showing one embodiment of the present invention, and shows, for example, a selective electroplating apparatus. In the figure, a jet nozzle is used to spray a plating solution [2] as a jet stream along the surface of a part 2 to be processed, for example, a part to be plated, of a cathode ttS, which is a workpiece. I is a nozzle joint in which the jet nozzle αQ can be applied to any surface area by changing the angle of the jet nozzle, t12 is a plating solution circulation pipe, and α3 is a chemical solution applied to the jet nozzle Ql. The supply pump 2, for example, is a circulation pump, and α4 is a plating solution temperature control device.Also, arrows (A) and (B) indicate the flow of the plating solution, and arrow (A) shows the flow of the plating solution. There is.
上記のように構成された選択的化学加工装置においては
、エネルギービーム（５）を陰極１）！９の被加工部Ｋ
ｌｌ射して選択めっきを行なう際に、被加工部の表面に
沿って矢印（Ａ）に示すジェット噴流によってめっき液
（２）の流動を生じさせる。これによって。In the selective chemical processing apparatus configured as described above, the energy beam (5) is connected to the cathode 1)! 9. Processed part K
When performing selective plating by irradiating plating solution (2), the plating solution (2) is caused to flow along the surface of the workpiece by a jet stream shown by arrow (A). by this.
エネルギービーム（５）の加熱に伴なう被めっき部の周
辺の温度上昇しためつき液１２）Ｖ！強制的に排除され
る。また、陰極α９を構成する被加工材の熱拡散によっ
て、陰極ａ９におけるエネルギービーム（５）の未照射
部分の温度が上昇するのを抑制する。従って選択めっき
の分解能の低下を防止することができ、陰極（１’３と
して従来のように絶縁基板上に薄い金属皮膜を付着した
構成にする必要はなく、任意の導電性材料に選択めっき
を施すことができる。Temperature rise around the part to be plated due to heating of the energy beam (5) 12) V! be forcibly removed. Further, the temperature of the portion of the cathode a9 not irradiated with the energy beam (5) is suppressed from rising due to thermal diffusion of the workpiece forming the cathode α9. Therefore, it is possible to prevent a decrease in the resolution of selective plating, and there is no need to use a structure in which a thin metal film is attached to an insulating substrate as the cathode (1'3) as in the past, and selective plating can be applied to any conductive material. can be administered.
なお、上記実施例では選択めっきを、電気めっき法によ
って行なう場合を示したが、他の実施例として無電解法
による選択めっきを行なうこともできる。第２図は無電
解めっきを行なう場合の構成図′ｆｔ示寸叡ので−ｎＦ
ｉｌ＆−？儒雪留めつ六−槁す六枯加工材で、任意の導
電性又は非導電性材料であり。In addition, although the above-mentioned embodiment shows the case where selective plating is performed by electroplating, selective plating can be performed by electroless method as another embodiment. Figure 2 is a configuration diagram when performing electroless plating.
il&-? Confucian fasteners are processed materials that can be any electrically conductive or non-conductive material.
（Ｉｎは無電解めっき液である。この無電解めっき液α
ηはめっき液温度管理装置α櫓で全面めっきが起こる温
度よりも低い温度で、かつ被加工材ｒｕｉのエネルギー
ビーム（５）が照射され加熱が起こる部分にのみめっき
が生じる程度の温１）に制御されている。(In is an electroless plating solution. This electroless plating solution α
η is a temperature lower than the temperature at which plating occurs on the entire surface using the plating solution temperature control device α yagura, and at a temperature 1) at which plating occurs only on the portion of the workpiece rui that is irradiated with the energy beam (5) and heated. controlled.
このように構成された選択的無電解めっき装置において
も、エネルギービーム（５）を照射する際に。Also in the selective electroless plating apparatus configured in this way, when irradiating the energy beam (5).
噴流ノズルａ１とポンプαｊによって矢印（Ａ）に示す
ように無電解めっき液鰭のジェット噴流を生じさせれば
、上記実施例と同様の効果が得られる。If a jet of electroless plating liquid fin is generated by the jet nozzle a1 and the pump αj as shown by the arrow (A), the same effect as in the above embodiment can be obtained.
また、上記実施例では、めっき槽＋１）内のめつき液を
循環させてジェット噴流を生じさせているように構成し
ているが、外部の容器内のめつき液を用いるように構成
してもよい。Further, in the above embodiment, the plating liquid in the plating tank +1) is circulated to generate a jet stream, but the plating liquid in the external container is used. Good too.
（また、エネルギービーム（５）としてレーザに限らず
、光ビームなどでもよい。）
さらに、上記実施例では２選択的に電解あるいは化学め
っきを行なう場合について述べたが、電解あるいは化学
めっき液の代りに電解あるいは化学エツチング液を用い
れば、被加工材に対して選択的なエツチングを行なうこ
とが可能である。(In addition, the energy beam (5) is not limited to a laser, but may also be a light beam.) Furthermore, in the above embodiment, the case where electrolytic or chemical plating is selectively performed is described, but instead of electrolytic or chemical plating solution, By using an electrolytic or chemical etching solution, it is possible to selectively etch the workpiece.
この発明は以上説明したとおり、化学溶液中に浸積され
た被加工材、この被加工材の被加工部にエネルギービー
ムを照射するエネルギービーム発生器、被加工部の表面
に涜って化学溶液を噴射する噴流ノズル、及び噴流ノズ
ルに化学溶液を供給するポンプを備え、エネルギービー
ム照射時の化学溶液及び被加工材の熱拡散を抑制し２選
択めっき又は選択エツチングなどの選択的化学加工の分
解能の低下を防ぎ、このため、被加工材として任意の材
料を用いることが可能となるという効果がある。As explained above, this invention consists of a workpiece immersed in a chemical solution, an energy beam generator that irradiates the workpiece part of the workpiece material with an energy beam, and a chemical solution that is applied to the surface of the workpiece part. Equipped with a jet nozzle that sprays a chemical solution, and a pump that supplies a chemical solution to the jet nozzle, it suppresses thermal diffusion of the chemical solution and the workpiece during energy beam irradiation, and improves the resolution of selective chemical processing such as 2-selective plating or selective etching. This has the effect of preventing a decrease in the properties of the material and thus making it possible to use any material as the workpiece.
第１図はこの発明の一実施例を示す選択的電気めっき装
置の構成図、第２図はこの発明の他の実施例を示す選択
的無電解めっき装置を示す構成図。
第３図は従来の選択的電気めっき装置を示す構成図であ
る。
（２）は化学溶液、（５）はエネルギービーム、（６）
はエネルギービーム発生器、 ＋１（ｌは噴流ノズル、
α３はポンプ、 ａ！１９． ａｓは被加工材、鰭は化
学溶液。
なお９図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a block diagram of a selective electroplating apparatus showing one embodiment of the invention, and FIG. 2 is a block diagram showing a selective electroless plating apparatus showing another embodiment of the invention. FIG. 3 is a block diagram showing a conventional selective electroplating apparatus. (2) is a chemical solution, (5) is an energy beam, (6)
is an energy beam generator, +1 (l is a jet nozzle,
α3 is a pump, a! 19. AS is the workpiece material, and the fin is the chemical solution. In addition, in FIG. 9, the same reference numerals indicate the same or equivalent parts.
Claims (2)
の被加工部にエネルギービームを照射するエネルギービ
ーム発生器、上記被加工部の表面に沿つて化学溶液を噴
射する噴流ノズル、及びこの噴流ノズルに化学溶液を供
給するポンプを備えた選択的化学加工装置。(1) A workpiece immersed in a chemical solution, an energy beam generator that irradiates the processed part of the workpiece with an energy beam, and a jet nozzle that sprays the chemical solution along the surface of the processed part. , and a selective chemical processing device comprising a pump for supplying a chemical solution to the jet nozzle.
ことを特徴とする特許請求の範囲第１項記載の選択的化
学加工装置。(2) The selective chemical processing apparatus according to claim 1, wherein the energy beam is a laser or a light beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050485A JPS61179884A (en) | 1985-02-05 | 1985-02-05 | Selective chemical working device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050485A JPS61179884A (en) | 1985-02-05 | 1985-02-05 | Selective chemical working device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61179884A true JPS61179884A (en) | 1986-08-12 |
| JPH0372158B2 JPH0372158B2 (en) | 1991-11-15 |
Family
ID=12028987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2050485A Granted JPS61179884A (en) | 1985-02-05 | 1985-02-05 | Selective chemical working device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179884A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009299178A (en) * | 2008-03-19 | 2009-12-24 | Rohm & Haas Electronic Materials Llc | Method for inhibiting background plating |
| JP2010070849A (en) * | 2008-07-31 | 2010-04-02 | Rohm & Haas Electronic Materials Llc | Inhibiting background plating |
-
1985
- 1985-02-05 JP JP2050485A patent/JPS61179884A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009299178A (en) * | 2008-03-19 | 2009-12-24 | Rohm & Haas Electronic Materials Llc | Method for inhibiting background plating |
| JP2010070849A (en) * | 2008-07-31 | 2010-04-02 | Rohm & Haas Electronic Materials Llc | Inhibiting background plating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0372158B2 (en) | 1991-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4283259A (en) | Method for maskless chemical and electrochemical machining | |
| CA1159790A (en) | Method for locally enhancing electroplating rates | |
| CA1259947A (en) | Laser-enhanced jet-plating and jet-etching: high speed maskless patterning method | |
| US5292418A (en) | Local laser plating apparatus | |
| US4349583A (en) | Laser enhanced maskless method for plating and simultaneous plating and etching of patterns | |
| JPH0247893A (en) | Method of forming conductive layer in substrate surface | |
| US20110042201A1 (en) | In situ Plating And Soldering Of Materials Covered With A Surface Film | |
| JPS6130672A (en) | Selective processing method | |
| von Gutfeld et al. | Electrochemical microfabrication by laser-enhanced photothermal processes | |
| Lv et al. | High-adhesion Cu patterns fabricated by nanosecond laser modification and electroless copper plating | |
| JPS61179884A (en) | Selective chemical working device | |
| US20020102745A1 (en) | Process for modifying chip assembly substrates | |
| Von Gutfeld et al. | High‐speed electroplating of copper using the laser‐jet technique | |
| JPS5817274B2 (en) | Electrodeposition processing method | |
| JPH04224695A (en) | Method and apparatus for executing anodic oxide coating treatment to piston | |
| JPH07150366A (en) | Selective plating method and production of circuit board | |
| JPS62218580A (en) | Selective plating method with laser | |
| JP2831119B2 (en) | Method and apparatus for plating active metal film | |
| JPS61186479A (en) | Selective plating method | |
| JPS59173292A (en) | Electrodeposition | |
| JPS61179893A (en) | Partial plating device | |
| KR20180058261A (en) | Method for forming electric circuit pattern and system for forming electric circuit pattern | |
| von Gutfeld | Laser-enhanced plating and etching for microelectronic applications | |
| JPH0534428B2 (en) | ||
| JPS62146279A (en) | Electroless plating method |