JPS61179486A - Conductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the structure of a TPT array used in a matrix type liquid crystal display device or the like.

[Conventional technology]

FIG. 6 is an explanatory diagram of the pixel configuration of the TPT array, and FIG. 7 is an explanatory diagram of the configuration of a matrix type display device using this.

6 and 7, 1 is a gate electrode line, 2 is a source electrode line, 3 is a drain electrode, and 4 is a TFT (thin
Film Transistor), 5 is a pixel electrode,
6 is display material such as liquid crystal, 7 is TFT array, 8 is TFT
Array substrate, 9 is a counter electrode substrate, 1o is a counter electrode, 11
indicates a matrix type display device.

The TFT array 7 includes a plurality of gate electrode lines 11 and a source electrode line 2 that intersects with these gate electrode lines ml, and at the intersection point there is a pixel electrode 5, an active element such as a TFT 4, which has nonlinear voltage and current characteristics. It is constructed by integrating pixels in which , etc. are formed. Further, the matrix type display device 11 uses the TFT array 7 described above, and a counter electrode substrate 9 having a counter electrode 1o such as a transparent conductive film electrode opposite thereto, and a display material 6 such as a liquid crystal between the two substrates 8 and 9. It is constructed by holding the .

Figures 8 to 10 show the configuration of a conventional device of this type,
FIG. 8 is a plan view of a TPT array pixel. Next, the configuration of this conventional TPT array 7 and matrix type display device 11 will be explained with reference to FIGS. 8 to 10 and FIG. 7.

The TPT array 7 is made of ITO (Indium Tin0) on the surface of a TFT array substrate 8 made of glass or the like.
After successively forming a transparent conductive film such as xide) and, if necessary, amorphous silicon doped with an n-type semiconductor impurity such as phosphorus (P) (hereinafter referred to as a-Si (n)), etc. , a pixel electrode 5 that is integrated with the drain electrode 3 by patterning it by photolithography or the like;
Then, the source electrode line 2 and the a-5i (n) layer 15 are formed simultaneously. Next, for example, amorphous silicon (
After successively forming a semiconductor layer 12 such as a-3i below and a gate insulating film 13 made of SiN or the like, this is patterned, and then after forming a film of Al1 or the like, this is patterned. Gate electrode lines 1 are then formed, and the TPT array 7 is completed.

Further, the matrix type display device 11 is completed by using the above-mentioned TPT array 7 and sandwiching a display material 6 such as liquid crystal between this and a counter electrode substrate 9 having a counter electrode 10 made of a transparent conductive film. .

Since the matrix type display device 11 is used for displaying images, etc., the size of the unit pixel shown in FIG. 6 or 8 is limited to about 50 μm to 1 mm, for example, and the required number of pixels is Depending on the purpose of the display device, display screen size, etc., usually several thousand to several million pieces are required. Further, the line widths of the source electrode line 2 and the gate electrode line 1 described above are limited to, for example, several tens of μm or less due to constraints such as the aperture ratio of the matrix display device 11, and also due to the screen size of the display device. A corresponding length is required.

Furthermore, in order to display images etc. on the matrix type display device 11, the gate electrode line l side is used as a scanning electrode and the source electrode line 2 side is used as a video signal electrode. For example, 1/2 interlaced display is performed. , it is necessary to charge and drive the pixel to the video signal potential via the source electrode line 2 and TFT 4 during a period of 63.5 μsec. Therefore, the on-resistance of the source electrode line 2, TPT 4, etc. must be small. In the required large screen matrix type display device,
It is particularly important to reduce the resistance of the source electrode line 2. Furthermore, in order to manufacture the matrix type display device 11 stably and at low cost, it is most effective to reduce the number of times patterning is performed by the above-mentioned photolithography method or the like.

[Problem that the invention seeks to solve]

Within the above limitations and requirements, the conventional TPT array 7 and matrix display device 11 have source electrode lines 2 made of a transparent conductive film such as ITo which has a relatively high resistance compared to aluminum etc. The wiring resistance of the source electrode line 2, which serves as the video signal electrode line, is high, reaching several to several tens of MΩ in the large-screen matrix display device 11, making it impossible to display uniformly and causing a drop in the video signal voltage. It has disadvantages such as the need to increase the size of the display and the inability to display multiple gradations, making it difficult to obtain a good display, especially in large-screen matrix-type display devices.

This invention was made in order to eliminate the above-mentioned drawbacks, and its purpose is to obtain a semiconductor device that can be constructed without increasing the number of patterning operations such as photolithography, and has a source electrode line with low resistance. .

[Means for solving problems]

In the semiconductor device according to the present invention, the portion other than the intersection of the source electrode line with the gate electrode line is composed of only a composite wiring layer consisting of a transparent conductive film and another low resistance wiring layer or a low resistance wiring layer. be.

[Effect]

In this invention, since the portion of the source electrode line other than the intersection with the gate electrode line is composed of only a composite electrode wiring or a low resistance wiring layer consisting of a transparent conductive film and another low resistance wiring layer, the source electrode line A low resistance is achieved.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a semiconductor device according to an embodiment of the present invention, in which the source electrode line 2 is made of a transparent conductive film such as ITO at the intersection of the gate electrode line 1 and the source electrode line 2. The line 1 and the source electrode line 2 have good insulation properties between the eyebrows, and short-circuiting and the like between the two at the intersection can be reduced. In addition, the manufacturing process is simplified, as the pattern formation of each component of the TPT array 7 can be achieved by three photolithography steps, etc., and the TPT array 7 can be manufactured with a small number of masks, making it especially suitable for large-sized, high-performance devices. The TFT array 7 and the matrix type display device have the advantage of being able to be manufactured at a high manufacturing yield and with good reproducibility.

In addition, FIGS. 4 and 5 illustrate other embodiments of the present invention.
denotes a contact hole, and other same reference numerals indicate the same or corresponding parts as in the embodiment of the present invention described above.

Hereinafter, other embodiments of the present invention will be described with respect to their differences from the above-mentioned embodiment and their characteristics. Another embodiment of the present invention shown in FIG. 4 and FIG.
A contact hole 17 is provided in the contact hole 17, and a transparent conductive film such as 170 is formed under the contact hole 17 to achieve low resistance of the source electrode line 2, which becomes a video signal line.

In the example explained in FIGS. 4 and 5, two contact holes 17 are provided for each pixel, but the contact hole 17 may be divided into two or more contact holes 17, and two or more contact holes 17 may be formed. The contact hole 17 may be made larger and one contact hole may be provided for each pixel, and the same effect as in the above embodiment can be obtained. Also, although not shown, 17
The source electrode 2 made of a 0 grade transparent conductive film is connected to the interlayer insulating part 14.
Alternatively, the source electrode line may be formed by forming the source electrode line with only the low-resistance wiring layer 16 between them.

〔Effect of the invention〕

As described above, according to the semiconductor device according to the present invention, the portion other than the intersection of the source electrode line with the gate electrode line is formed of a composite electrode wiring or a low resistance wiring layer consisting of a transparent conductive film and another low resistance wiring layer. Therefore, it is possible to reduce the resistance of the source electrode line.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention;
Figure 2 is a cross-sectional view taken along the line AA' in Figure 1, Figure 3 is a cross-sectional view taken along the line B-B'' in Figure 1, Figure 4 is an explanatory diagram of the pixels of the zero firing array, and Figure 7 is the matrix. In the figure, 1 is a gate electrode line, 2 is a source electrode line, 3 is a drain electrode, 4 is T)'T (active element), 5 is a pixel electrode, 6 is a display material, 7 is a TFT array, 11 is a matrix type display device, 12 is a semiconductor layer, 13 is a gate insulating film, 1
4 is an insulating part between the eyebrows, I6 is a low resistance wiring layer, and 17 is a contact hole. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) In a semiconductor device configured by having a plurality of gate electrode lines and a source electrode line or a drain electrode line orthogonal to the gate electrode lines, and arranging an active element having nonlinear characteristics at each intersection point, 1. A semiconductor device characterized in that a portion other than the intersection of a source electrode line with a gate electrode line of an element is constituted by a composite electrode wiring made of a transparent conductive film and another low resistance wiring layer or only a low resistance wiring layer.