JPS61174654A - Resin-encapsulated semiconductor device - Google Patents
Resin-encapsulated semiconductor deviceInfo
- Publication number
- JPS61174654A JPS61174654A JP60014243A JP1424385A JPS61174654A JP S61174654 A JPS61174654 A JP S61174654A JP 60014243 A JP60014243 A JP 60014243A JP 1424385 A JP1424385 A JP 1424385A JP S61174654 A JPS61174654 A JP S61174654A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy
- semiconductor device
- compounds
- encapsulated semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- -1 1,2-epoxyethyl Chemical group 0.000 description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000011342 resin composition Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- ZIPLUEXSCPLCEI-UHFFFAOYSA-N cyanamide group Chemical group C(#N)[NH-] ZIPLUEXSCPLCEI-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010680 novolac-type phenolic resin Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- DDHYZBVBQZYMTO-UHFFFAOYSA-N 1-(dimethylamino)pentan-1-ol Chemical compound CCCCC(O)N(C)C DDHYZBVBQZYMTO-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- MCMFEZDRQOJKMN-UHFFFAOYSA-N 1-butylimidazole Chemical compound CCCCN1C=CN=C1 MCMFEZDRQOJKMN-UHFFFAOYSA-N 0.000 description 1
- AXFVIWBTKYFOCY-UHFFFAOYSA-N 1-n,1-n,3-n,3-n-tetramethylbutane-1,3-diamine Chemical compound CN(C)C(C)CCN(C)C AXFVIWBTKYFOCY-UHFFFAOYSA-N 0.000 description 1
- CBVFSZDQEHBJEQ-UHFFFAOYSA-N 2,2,3-trimethylhexane Chemical compound CCCC(C)C(C)(C)C CBVFSZDQEHBJEQ-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- BPHYZRNTQNPLFI-UHFFFAOYSA-N 2,4,6-trihydroxytoluene Chemical compound CC1=C(O)C=C(O)C=C1O BPHYZRNTQNPLFI-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- SIQHSJOKAUDDLN-UHFFFAOYSA-N 2-methyl-1-propylimidazole Chemical compound CCCN1C=CN=C1C SIQHSJOKAUDDLN-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- WMNWJTDAUWBXFJ-UHFFFAOYSA-N 3,3,4-trimethylheptane-2,2-diamine Chemical compound CCCC(C)C(C)(C)C(C)(N)N WMNWJTDAUWBXFJ-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- HVMHLMJYHBAOPL-UHFFFAOYSA-N 4-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)propan-2-yl]-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1C(C)(C)C1CC2OC2CC1 HVMHLMJYHBAOPL-UHFFFAOYSA-N 0.000 description 1
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 1
- ADAHGVUHKDNLEB-UHFFFAOYSA-N Bis(2,3-epoxycyclopentyl)ether Chemical compound C1CC2OC2C1OC1CCC2OC21 ADAHGVUHKDNLEB-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VBIIFPGSPJYLRR-UHFFFAOYSA-M Stearyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C VBIIFPGSPJYLRR-UHFFFAOYSA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- 240000002871 Tectona grandis Species 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 238000007171 acid catalysis Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VZWMKHUMEIECPK-UHFFFAOYSA-M benzyl-dimethyl-octadecylazanium;bromide Chemical compound [Br-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 VZWMKHUMEIECPK-UHFFFAOYSA-M 0.000 description 1
- AFBPHRMRBXPVPX-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;acetate Chemical compound CC([O-])=O.CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 AFBPHRMRBXPVPX-UHFFFAOYSA-M 0.000 description 1
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- GLROGUSVUGSGPO-UHFFFAOYSA-N bis(3-methyl-7-oxabicyclo[4.1.0]heptan-4-yl) hexanedioate Chemical compound C1C2OC2CC(C)C1OC(=O)CCCCC(=O)OC1CC2OC2CC1C GLROGUSVUGSGPO-UHFFFAOYSA-N 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- NZNMSOFKMUBTKW-UHFFFAOYSA-M cyclohexanecarboxylate Chemical compound [O-]C(=O)C1CCCCC1 NZNMSOFKMUBTKW-UHFFFAOYSA-M 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- YIFWXQBNRQNUON-UHFFFAOYSA-M dodecyl(trimethyl)azanium;iodide Chemical compound [I-].CCCCCCCCCCCC[N+](C)(C)C YIFWXQBNRQNUON-UHFFFAOYSA-M 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical class [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、樹脂封止型半導体装置に関するものである。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a resin-sealed semiconductor device.
樹脂封止型半導体装置は、高温高温状態(例えば、65
℃、95%相対湿度中、121℃、2気圧過飽和水蒸気
中:PCTなど)に長時間放置した場合、素子上のアル
ミニウム配線やボンディング線が腐食断線する問題があ
る。この原因は、パッケージ材料中に含まれているイオ
ン性不純物。Resin-sealed semiconductor devices are exposed to high temperature conditions (for example, 65
℃, 95% relative humidity, 121° C., 2 atm supersaturated water vapor (PCT, etc.), there is a problem that the aluminum wiring and bonding wires on the element corrode and break. This is caused by ionic impurities contained in the packaging material.
素子に対する応力、密着性、接着性、外気や半田フラッ
クス中に含まれている各種の腐食促進剤、それに水分の
パッケージ内への浸入に起因している。This is caused by stress on the device, adhesion, adhesion, various corrosion accelerators contained in the outside air and solder flux, and moisture intrusion into the package.
ところで、パッケージ用樹脂組成物は、ノボラック型フ
ェノール樹脂を硬化剤とするエポキシ系材料が主流であ
る。前記問題の対策としては、材料素材(特にレジン成
分)の高純度化、素子とレジン硬化物との密着性、接着
性の改良、レジン硬化物の低応力化、高ガラス転移点へ
の改善などがなされてきた。しかし、更にすぐれた信頼
性の付与が求められている。尚、本願に関連しPlas
ticsEngineering、 &4 、 P 3
1 (1981)が知られてぃる。By the way, the mainstream of resin compositions for packaging is epoxy-based materials that use novolac type phenolic resin as a curing agent. Countermeasures for the above problems include increasing the purity of the material (especially the resin component), improving the adhesion and adhesion between the element and the cured resin, lowering the stress of the cured resin, and improving the glass transition point. has been done. However, there is a need for even better reliability. In addition, in connection with this application, Plas
ticsEngineering, &4, P3
1 (1981) is known.
本発明は、高温高温下で長時間放置しても、信頼性の高
い動作が可能な樹脂封止型半導体装置を提供するにある
。An object of the present invention is to provide a resin-sealed semiconductor device that can operate with high reliability even when left at high temperatures for a long time.
本発明は、上記の状況に鑑みてなされたもので、その要
旨は、少なくとも1次式
(式中、RはHまたはCH,、m+n)2.mは1〜5
のいずれかであり、nは0〜5のいずれかである0mと
nは同じであっても、異なっていてもよい、〕で表わさ
れるシアナミド末端基とヒドロキシル末端基を有する化
合物を含むことを特徴とする樹脂組成物で樹脂封止して
なる半導体装置。The present invention has been made in view of the above situation, and the gist thereof is at least a linear formula (wherein R is H or CH, m+n)2. m is 1 to 5
0m and n may be the same or different, where n is any one of 0 to 5, and m and n may be the same or different. A semiconductor device resin-sealed with a characteristic resin composition.
及び、少なくとも1次式
〔式中、RはHまたはCH,、m+n>2.mは1〜5
のいずれかであり、nはO〜5のいずれか化合物を含む
ことを特徴とする樹脂組成物で樹脂封止してなる半導体
装置。and at least a linear formula [wherein R is H or CH, m+n>2. m is 1 to 5
1. A semiconductor device sealed with a resin composition, wherein n includes any one of O to 5.
及び、少なくとも、次式
〔式中、RはHまたはCH,、m+n>2.mは1〜5
のいずれかであり、nはO〜5のいずれかである0mと
nは同じであっても、異なっていて物で封止してなる半
導体装置である。and at least the following formula [wherein R is H or CH, m+n>2. m is 1 to 5
, and n is any one of O to 5.Even if 0m and n are the same, they are different, and the semiconductor device is sealed with an object.
本発明において、前記ジアミナト末端基を有するエポキ
シ化合物は1例えば、以下の反応により得られる。In the present invention, the epoxy compound having a diaminate end group can be obtained, for example, by the following reaction.
+口BrCミ
〔式中、RはHまたはCH,、m+n)2、mは1〜5
のいずれかであり、nはO〜5のいずれかである0mと
nは同じであっても、具なっていてもよい、〕で表わさ
れる。+ BrCmi [in the formula, R is H or CH,, m+n)2, m is 1 to 5
and n is any one of O to 5. 0m and n may be the same or the same.
ここで、Br−C=Nの替りに、CM・C=Nを用いて
もよい、また、触媒はトリエチルアミンをはじめ第3級
アミンが有効である。Here, CM.C=N may be used instead of Br-C=N, and tertiary amines such as triethylamine are effective as catalysts.
本発明の樹脂組成物には、エポキシ樹脂、フェノール樹
脂、メラミン樹脂、尿素樹脂、ポリエステル樹脂、ウレ
タン樹脂、ポリアミド樹脂、ポリイミド樹脂(付加型ポ
リイミドを含む)、ポリスルホン樹脂、ポリヒドロキシ
スチレン樹脂、ポリブタジェン樹脂、ポリスチレン並び
に各種のポリスチレン共重合体、シリコーン樹脂、フル
オロポリマ、ジアリルフタレート樹脂などの1種以上を
添加配合して用いることも出来る。The resin composition of the present invention includes epoxy resin, phenol resin, melamine resin, urea resin, polyester resin, urethane resin, polyamide resin, polyimide resin (including addition type polyimide), polysulfone resin, polyhydroxystyrene resin, polybutadiene resin. , polystyrene, various polystyrene copolymers, silicone resins, fluoropolymers, diallyl phthalate resins, and the like may be added and used.
これらの中で、特にエポキシ樹脂と併用して用いること
は1本発明の用途、効果の拡大に有益である。Among these, the use in combination with an epoxy resin is particularly beneficial for expanding the uses and effects of the present invention.
多官能エポキシ化合物としては1例えばビスフェノール
Aのジグリシジルエーテル、ブタジェンジェポキシサイ
ド、3.4−エポキシシクロヘキシルメチル−(3,4
−エポキシ(シクロヘキサンカルボキシレート、ビニル
シクロヘキサンジオキシド、4.4’−ジ(1,2−エ
ポキシエチル)ジフェニルエーテル、4.4’−1,2
−エポキシエチル)ビフェニル、2.2−ビス(3,4
−エポキシシクロヘキシル)プロパン、レゾルシンのグ
リシジルエーテル、フロログルシンのジグリシジルエー
テル、メチルフロログルシンのジグリシジルエーテル、
ビス−(2,3−エポキシシクロペンチル)エーテル、
2− (3,4−エポキシ)−シクロヘキサンー5.5
−スピロ(3,4−エポキシ)−シクロヘキサン−m−
ジオキサン、ビス−(3,4−エポキシ−6−メチルシ
クロヘキシル)アジペート、N* N’ −m−フェニ
レンビス(4,5−エポキシ−1,2−シクロヘキサン
)ジカルボキシイミドなどの2官能のエポキシ化合物、
パラアミノフェノールのトリグリシジルエーテル、ポリ
アリルグリシジルエーテル、1,3゜5−トリ(1,2
−エポキシエチル)ベンゼン。Examples of polyfunctional epoxy compounds include diglycidyl ether of bisphenol A, butadiene jepoxide, 3,4-epoxycyclohexylmethyl-(3,4
-Epoxy (cyclohexane carboxylate, vinyl cyclohexane dioxide, 4.4'-di(1,2-epoxyethyl) diphenyl ether, 4.4'-1,2
-epoxyethyl)biphenyl, 2,2-bis(3,4
- epoxycyclohexyl) propane, glycidyl ether of resorcinol, diglycidyl ether of phloroglucin, diglycidyl ether of methylphloroglucin,
bis-(2,3-epoxycyclopentyl)ether,
2-(3,4-epoxy)-cyclohexane-5.5
-spiro(3,4-epoxy)-cyclohexane-m-
Difunctional epoxy compounds such as dioxane, bis-(3,4-epoxy-6-methylcyclohexyl)adipate, N*N'-m-phenylenebis(4,5-epoxy-1,2-cyclohexane)dicarboximide ,
Triglycidyl ether of para-aminophenol, polyallyl glycidyl ether, 1,3°5-tri(1,2
-epoxyethyl)benzene.
2.2’ 、4.4’−テトラグリシドキシベンゾフェ
ノン、テトラグリシドキシテトラフェニルエタン、フェ
ノールホルムアルデヒドノボラックのポリグリシジルエ
ーテル、グリセリンのトリグリシジルエーテル、トリメ
チロールプロパンのトリグリシジルエーテルなど3官能
以上のエポキシ化合物が用いられる。2.2', 4.4'-tetraglycidoxybenzophenone, tetraglycidoxytetraphenylethane, polyglycidyl ether of phenol formaldehyde novolac, triglycidyl ether of glycerin, triglycidyl ether of trimethylolpropane, etc. Epoxy compounds are used.
次に、フェノールとアルデヒドとの縮合反応物(B)と
しては、各種のフェノール系化合物とアルデヒド系化合
物とを、酸性もしくは塩基性触媒の存在において、付加
縮合反応させることにより生成される樹脂類が使用され
、特にフェノール、クレゾールなどとホルムアルデヒド
とを用いて、酸性触媒反応によって合成されるノボラッ
ク樹脂が有用である。Next, as the condensation reaction product (B) of phenol and aldehyde, resins produced by addition condensation reaction of various phenol compounds and aldehyde compounds in the presence of an acidic or basic catalyst are used. Useful are novolak resins, which are synthesized by acid catalysis, especially using phenol, cresol, etc., and formaldehyde.
さらに、本発明においては、前記3成分を含む組成物の
硬化反応を促進する目的で各種の触媒を添加することが
でき、この触媒としては、例えばトリエタノールアミン
、テトラメチルブタンジアミン、テトラメチルペンタン
ジアミン、テトラメチルヘキサンジアミン、トリエチレ
ンシア1ン及びジメチルアニリン等の第3級アミン、ジ
メチルアミノエタノール及びジメチルアミノペンタノー
ル等のオキシアルキルアミンならびにトリス(ジメチル
アミノメチル)フェノール及びメチルモル承りン等のア
ミン類を適用することができる。Furthermore, in the present invention, various catalysts can be added for the purpose of accelerating the curing reaction of the composition containing the three components, such as triethanolamine, tetramethylbutanediamine, and tetramethylpentane. Tertiary amines such as diamines, tetramethylhexanediamine, triethylenecyanine and dimethylaniline, oxyalkylamines such as dimethylaminoethanol and dimethylaminopentanol, and amines such as tris(dimethylaminomethyl)phenol and methylmonocarbons. can be applied.
又、同じ目的で、触媒として1例えばセチルトリメチル
アンモニウムブロマイド、セチルトリメチルアンモニウ
ムクロライド、ドデシルトリメチルアンモニウムアイオ
ダイド、トリメチルドデシルアンモニウムクロライド、
ベンジルジメチルテトラデシルアンモニウムクロライド
、ベンジルメチルパルメチルアンモニウムクロライド、
アリルドデシルトリメチルアンモニウムブロマイド、ベ
ンジルジメチルステアリルアンモニウムブロマイド、ス
テアリルトリメチルアンモニウムクロライド及びベンジ
ルジメチルテトラデシルアンモニウムアセテート等の第
4級アンモニウム塩を適用することができ、更には、2
−ウンデシルイミダゾール、2−メチルイミダゾール、
2−エチルイミダゾール、2.ヘプタデシルイミダゾー
ル、2−メチル−4−エチルイミダゾール、1−ブチル
イミダゾール、1−プロピル−2−メチルイミダゾール
、1−ベンジル−2−メチルイミダゾール、1−シアノ
エチル−2−メチルイミダゾール、1−シアノエチル−
2−ウンデシルイミダゾール、1−シアノエチル−2−
フェニルイミダゾール。For the same purpose, catalysts such as cetyltrimethylammonium bromide, cetyltrimethylammonium chloride, dodecyltrimethylammonium iodide, trimethyldodecylammonium chloride,
Benzyldimethyltetradecylammonium chloride, benzylmethylpalmethylammonium chloride,
Quaternary ammonium salts such as allyldodecyltrimethylammonium bromide, benzyldimethylstearylammonium bromide, stearyltrimethylammonium chloride and benzyldimethyltetradecylammonium acetate can be applied;
-undecylimidazole, 2-methylimidazole,
2-ethylimidazole, 2. Heptadecylimidazole, 2-methyl-4-ethylimidazole, 1-butylimidazole, 1-propyl-2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-
2-undecylimidazole, 1-cyanoethyl-2-
Phenylimidazole.
1−アジン−2−メチルイミダゾール及び1−アジン−
2−ウンデシルイミダゾール等のイミダゾール化合物あ
るいは又、トリフェニルホスフィンテトラフェニルボレ
ート、トリエチルアミンテトラフェニルボレート、N−
メチルモルホリンテトラフェニルボレート、ピリジンテ
トラフェニルボレート2−エチル−4−メチルイミダゾ
ールテトラフェニルボレート及び2−エチル−1,4−
ジメチルイミダゾールテトラフェニルボレート等のテト
ラフェニルボロン塩等が有用である。1-Azine-2-methylimidazole and 1-azine-
Imidazole compounds such as 2-undecylimidazole, triphenylphosphine tetraphenylborate, triethylaminetetraphenylborate, N-
Methylmorpholine tetraphenylborate, pyridine tetraphenylborate 2-ethyl-4-methylimidazole tetraphenylborate and 2-ethyl-1,4-
Tetraphenylboron salts such as dimethylimidazole tetraphenylborate are useful.
上記の触媒はその2種以上を併用することもでき、その
量は、多官能エポキシ化合物(A) 100に対して1
重量比で、0.01〜20の範囲で用いればよい。Two or more of the above catalysts can also be used in combination, and the amount thereof is 1 per 100 of the polyfunctional epoxy compound (A).
It may be used in a weight ratio of 0.01 to 20.
また、本発明のエポキシ樹脂組成物には、その用途、使
用目的に応じて、例えば炭酸カルシウム。The epoxy resin composition of the present invention may also contain, for example, calcium carbonate, depending on its intended use.
シリカ、アルミナ、チタニア、水酸化アルミニウム、ケ
イ酸アルミニウム、ケイ酸ジルコニウム。Silica, alumina, titania, aluminum hydroxide, aluminum silicate, zirconium silicate.
ジルコン、ガラス、タルク、マイカ、黒鉛、アルミニウ
ム、鋼、鉄などの粉末や短繊維状充填剤、脂肪酸及びワ
ックス類等の離型剤、エポキシシラン、ビニルシラン、
ボラン系化合物及びアルキルチタネート系化合物等のカ
ップリング剤、そしてさらに、アンチモンやリンの化合
物及びハロゲン含有化合物のような難燃剤を加えること
ができる。Powders and short fibrous fillers such as zircon, glass, talc, mica, graphite, aluminum, steel, and iron, mold release agents such as fatty acids and waxes, epoxy silane, vinyl silane,
Coupling agents such as borane compounds and alkyl titanate compounds, and also flame retardants such as antimony and phosphorous compounds and halogen-containing compounds can be added.
本発明の樹脂組成物は、上記した成分をロール。The resin composition of the present invention is prepared by rolling the above-mentioned components.
ニーダ−、コニーダー、またはヘンシェルミキサー等を
用いて加熱(約70〜80℃)混練することによって調
製される。また、成分化合物が固体である場合には、微
粉化した後混合するトライブレンド法によって配合する
こともできる。得られた組成物は約150〜200℃の
温度で短時間に硬化できる。It is prepared by heating (about 70 to 80°C) and kneading using a kneader, co-kneader, Henschel mixer, or the like. Moreover, when the component compounds are solid, they can also be blended by a tri-blend method in which they are pulverized and then mixed. The resulting composition can be cured in a short period of time at temperatures of about 150-200°C.
実施例1,2
シアナミド末端基とヒドロキシル末端基を有する化合物
の合成
ノボラック型フェノール・ホルムアルデヒi縮合物(数
平均分子量:375)100gを、メチルエチルケトン
300gに溶解した。これに。Examples 1 and 2 Synthesis of a compound having a cyanamide end group and a hydroxyl end group 100 g of a novolac-type phenol-formaldehy condensate (number average molecular weight: 375) was dissolved in 300 g of methyl ethyl ketone. to this.
10.6 g (0,1mole)のB r−C=Nを
滴加した後、トリエチルアミン0 、5 m m を
添加した。10.6 g (0.1 mole) of B r-C=N were added dropwise followed by 0.5 m m of triethylamine.
その後、加熱還流を60分間行なった後、水洗した後、
水分を乾燥分離した。得られた反応物は、軟化点79〜
83℃であった。After that, after heating under reflux for 60 minutes and washing with water,
Water was separated by drying. The obtained reaction product had a softening point of 79~
The temperature was 83°C.
上記のシアナミド末端基とヒドロキシル基を有する反応
物を60重量部、多官能エポキシ化合物としてオルト・
タレゾールノボラック型エポキシ(エポキシ当量:21
5.日本化薬社製)及びXD−9053−00L (エ
ポキシ当量:204.ダウ・ケミカル社製)のそれぞれ
100重量部、硬化促進剤として、トリエチルアミン・
テトラフェニルボレート(TEAK) 2重量部、カッ
プリンク剤としてエポキシシランKBM303 (信越
化学社製)1.5重量部、難燃剤として、赤リン1.0
重量部と水酸化アルミニウム(Al(OH)3)5重量
部、フィシとして、溶融石英ガラス粉(V。60 parts by weight of the above reactant having a cyanamide end group and a hydroxyl group, ortho-
Talesol novolak type epoxy (epoxy equivalent: 21
5. 100 parts by weight each of Nippon Kayaku Co., Ltd.) and XD-9053-00L (epoxy equivalent: 204, Dow Chemical Co., Ltd.), and triethylamine as a curing accelerator.
2 parts by weight of tetraphenylborate (TEAK), 1.5 parts by weight of epoxysilane KBM303 (manufactured by Shin-Etsu Chemical Co., Ltd.) as a coupling agent, and 1.0 parts by weight of red phosphorus as a flame retardant.
parts by weight and 5 parts by weight of aluminum hydroxide (Al(OH)3), fused silica glass powder (V.
Thの含有量i、oppb以下)495重量部、着色剤
としてカーボンブラックCM−800(キャボツド社製
)2.0重量部を配合して、2種類の配合物を作った。Two types of formulations were prepared by blending 495 parts by weight of Th content (i, oppb or less) and 2.0 parts by weight of carbon black CM-800 (manufactured by Cabot Co., Ltd.) as a coloring agent.
次に、この配合物を75〜80℃に加熱された2本ロー
ルで混練した。冷却後、粗粉砕して目的の樹脂組成物を
得た。この樹脂組成物を用いて、256にビットD−R
AMメモリ用LSIを、トランスファ成形機を用いて、
180℃、70kg/aJ、 2分間の条件でモールド
した。得られたレジンパッケージ型メモリ用LSIは、
121℃、2気圧過飽和水蒸気中(プレッシャ・フッカ
テスト、PCT)に所定時間放置した後、取り出し、A
l電極の腐食断線の有無をチェックした。Next, this blend was kneaded with two rolls heated to 75-80°C. After cooling, it was coarsely ground to obtain the desired resin composition. Using this resin composition, Bit D-R was applied to 256.
AM memory LSI is manufactured using a transfer molding machine.
Mold was carried out under the conditions of 180°C, 70 kg/aJ, and 2 minutes. The obtained resin packaged memory LSI is
After leaving it in supersaturated steam at 121°C and 2 atm (pressure hooker test, PCT) for a specified period of time, take it out and
The presence or absence of corrosion and disconnection of the electrode was checked.
また、−50’e、!+150℃の冷熱サイクルを行な
い、不良発生の有無をチェックした。結果を表1に示し
た。Also, -50'e,! A cooling/heating cycle at +150°C was performed to check for defects. The results are shown in Table 1.
表1
手続補正書(方式)
%式%
事件の表示
昭和60年特許願第 14243 号発明の名称
樹脂封止型半導体装置
補正をする者
・1警件との関係 特許出願人
名 U: t5101株式会社 日 立 製 作 所代
理 人
補正の内容
〔発明の背景〕
樹脂封止型半導体装置は、高温高温状態(例えば、65
℃、95%相対湿度中、121℃、2気圧過飽和水蒸気
中: PCTなと)に長時間放置した場合、素子上のア
ルミニウム配線やボンディング線が腐食断線する問題が
ある。この原因は、パッケージ材料中に含まれているイ
オン性不純物、素子に対する応力、密着性、接着性、外
気や半田フラッグス中に含ま九でいる各種の腐食促進剤
。Table 1 Procedural amendment (method) % formula % Display of case 1985 Patent Application No. 14243 Name of invention Resin-encapsulated semiconductor device Person making amendment/Relationship with case 1 Patent applicant name U: t5101 Co., Ltd. Hitachi Manufacturers Agent Contents of Personal Correction [Background of the Invention] Resin-sealed semiconductor devices are manufactured under high-temperature conditions (for example, 65
℃, 95% relative humidity, 121℃, 2 atm supersaturated water vapor (such as PCT), there is a problem that the aluminum wiring and bonding wires on the element will corrode and break. This is caused by ionic impurities contained in the package material, stress on the device, adhesion, adhesion, and various corrosion accelerators contained in the outside air and solder flags.
それに水分のパッケージ内への浸入に起因している。This is due to the infiltration of moisture into the package.
ところで、パッケージ用樹脂組成物は、ノボラック型フ
ェノール樹脂を硬化剤とするエポキシ系材料が主流であ
る。前記問題の対策としては、材料素材(特にレジン成
分)の高純度化、素子とレジン硬化物との密着性、接着
性の改良、レジン硬化物の低応力性、高ガラス転移点へ
の改善などがなされてきた。しかし、更にすぐれた信頼
性の付与が求められている。尚、本願に関連しエンジニ
アリング プラスチックス(Plastics明細書f
s2頁を別紙の、にり訂正する。By the way, the mainstream of resin compositions for packaging is epoxy-based materials that use novolac type phenolic resin as a curing agent. Countermeasures for the above problems include increasing the purity of the material (especially the resin component), improving the adhesion and adhesion between the element and the cured resin, and improving the low stress and high glass transition temperature of the cured resin. has been done. However, there is a need for even better reliability. In connection with this application, engineering plastics (Plastics specification f)
Correct page s2 on the attached sheet.
Claims (1)
5のいずれかであり、nは0〜5のいずれかである、m
とnは同じであつても、異なつていてもよい。〕で表わ
されるシアナミド末端基とヒドロキシル末端基を有する
化合物を含むことを特徴とする樹脂封止型半導体装置。[Claims] 1. At least the following formula ▲ Numerical formula, chemical formula, table, etc. ▼ [In the formula, R is H or CH_2, m+n>2, m is 1 to
5, n is any one of 0 to 5, m
and n may be the same or different. ] A resin-encapsulated semiconductor device comprising a compound having a cyanamide terminal group and a hydroxyl terminal group.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60014243A JPS61174654A (en) | 1985-01-30 | 1985-01-30 | Resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60014243A JPS61174654A (en) | 1985-01-30 | 1985-01-30 | Resin-encapsulated semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61174654A true JPS61174654A (en) | 1986-08-06 |
Family
ID=11855645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60014243A Pending JPS61174654A (en) | 1985-01-30 | 1985-01-30 | Resin-encapsulated semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61174654A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0710290U (en) * | 1993-07-06 | 1995-02-14 | 重義 立花 | Automotive protector |
US5426161A (en) * | 1986-01-23 | 1995-06-20 | Alliedsignal Inc. | Cyanato group containing phenolic resins, phenolic triazines derived therefrom |
-
1985
- 1985-01-30 JP JP60014243A patent/JPS61174654A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5426161A (en) * | 1986-01-23 | 1995-06-20 | Alliedsignal Inc. | Cyanato group containing phenolic resins, phenolic triazines derived therefrom |
JPH0710290U (en) * | 1993-07-06 | 1995-02-14 | 重義 立花 | Automotive protector |
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