JPS61168146A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPS61168146A JPS61168146A JP60005792A JP579285A JPS61168146A JP S61168146 A JPS61168146 A JP S61168146A JP 60005792 A JP60005792 A JP 60005792A JP 579285 A JP579285 A JP 579285A JP S61168146 A JPS61168146 A JP S61168146A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon carbide
- recording layer
- recording
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000003963 antioxidant agent Substances 0.000 abstract 2
- 230000003078 antioxidant effect Effects 0.000 abstract 2
- -1 etc. Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はたとえば光デイスクメモリにおいて、情報の記
録、再生および消去可能な情報記録媒体層構成の改良に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in the layer structure of an information recording medium capable of recording, reproducing and erasing information, for example in an optical disk memory.
近年、情報量の増大に伴ない情報を高密度シニ記録し再
生する媒体の開発が行なわれている。この棟の媒体に対
する情報記録法としてレーザー光や短パルスのキセノン
光などのエネルギーによる記録材料の光学的性質(吸収
、反射、透過)の変化を利用する方法が挙げられる。こ
の方法は(1)記録面密度が高くビット当りのメモリコ
ストが安1.)。In recent years, as the amount of information has increased, media have been developed that can record and reproduce information at high density. One of the methods for recording information on media in this building is a method that utilizes changes in the optical properties (absorption, reflection, transmission) of the recording material due to energy such as laser light or short pulses of xenon light. This method has (1) high recording surface density and low memory cost per bit; ).
(2)高速アクセスが可能である。(3)記録媒体の保
存性が良い。と云った利点を有している。現在までζユ
これらの記録材料としては金属(タングステン、クロム
、ニッケルなど)または半金属(810゜8i 0.
などのシリコン系)のような無機薄膜、染料などを含
有したポリマーによる有機薄膜などが知られている。(2) High-speed access is possible. (3) The recording medium has good storage stability. It has the following advantages. Until now, these recording materials have been either metals (tungsten, chromium, nickel, etc.) or semimetals (810°8i 0.
Inorganic thin films such as those made of silicon-based materials (e.g., silicon-based materials) and organic thin films made of polymers containing dyes, etc., are known.
また、記録方法としてはレーザー光の熱により記録媒体
を溶融、蒸発させて微小孔(ビット)を形成し、その反
射率変化を読み取る方法が用いら3ている。この方法は
記録されたピット情報を消去できないという欠点がある
。In addition, as a recording method, a method is used in which a recording medium is melted and evaporated by the heat of a laser beam to form minute holes (bits), and the change in reflectance of the bits is read. This method has the disadvantage that recorded pit information cannot be erased.
これに対して、カルコゲナイド材料に見られるようなレ
ーザー光照射による結晶と非晶質の相変化による反射率
の変化を用いた書換え可能な情報記録媒体も開発が進め
ら肚ている。In response, progress is being made in the development of rewritable information recording media that utilize a change in reflectance due to a phase change between crystal and amorphous due to laser beam irradiation, as seen in chalcogenide materials.
このような書換え可能な記録層としてはTeまたはTe
を主体とするカルコゲナイド材料が多く用いられている
。Te系材料は(11融点が低い、−、+21伝等率が
低い。(3)レーザー光波長での光吸収が大きい。Such a rewritable recording layer is made of Te or Te.
Chalcogenide materials mainly composed of are widely used. Te-based materials (11 have a low melting point, - and +21 have low transmission coefficients, and (3) have large light absorption at the wavelength of laser light.
と云った長所をもっている反面朶気中での酸化が発生し
酸化物となり易い短所をもっている。上記Teの酸化膜
は光照射による結晶から非晶質へ、あるいは非晶質から
結晶への相変化によっても光学濃度の変化は得ら肚ず、
情報の記録が行なえなくなる。そのため、記録層の耐酸
化性を増すことがこの種の記録媒体を実用化するための
重要なポイントとなる。そこで、この記録層に種々の材
料を積層することにより酸化の防止を図ることが試みら
れできた。その材料としては他の金層薄膜(N1゜Cr
、W)や有機薄膜が土に用いられている。On the other hand, it has the disadvantage that it is easily oxidized in the atmosphere and becomes an oxide. The Te oxide film does not undergo a change in optical density even when the phase changes from crystal to amorphous or from amorphous to crystal due to light irradiation.
Information cannot be recorded. Therefore, increasing the oxidation resistance of the recording layer is an important point for putting this type of recording medium into practical use. Therefore, attempts have been made to prevent oxidation by laminating various materials on this recording layer. Other gold layer thin films (N1°Cr
, W) and organic thin films are used on soil.
しかしながら、これらの金層薄膜はTeなどの記録層に
対して付着性が悪(、また機械的強度が弱く表面に傷が
付き易いといった欠点を有している。However, these gold layer thin films have drawbacks such as poor adhesion to recording layers such as Te (and poor mechanical strength and easy surface scratches).
一方、有機薄膜の場合には耐熱性が劣るため情報記録時
において熱により膜の変形や孔形成が生ずる可能性を有
している。On the other hand, in the case of an organic thin film, the heat resistance is poor, so there is a possibility that the film may be deformed or pores may be formed due to heat during information recording.
このような金属薄膜や有機薄膜の酸化防止層の欠点を補
なうため酸化珪素(Sin、5in2など)が用いられ
る。この酸化珪素膜は耐熱性に優れ、かつ傷が付き難く
緻密であるといった長所をもち、保護層としては好適で
あるが、反面吸湿性をもっているため酸化珪素膜早独で
は強度が弱く、樹脂などにより被覆層を形成する必要が
あるという欠点を有している。Silicon oxide (Sin, 5in2, etc.) is used to compensate for the drawbacks of such anti-oxidation layers of metal thin films and organic thin films. This silicon oxide film has the advantages of excellent heat resistance, is hard to scratch, and is dense, making it suitable as a protective layer.However, on the other hand, it has hygroscopic properties, so its strength is weak compared to silicon oxide films, and it can be used for resins, etc. It has the disadvantage that it is necessary to form a covering layer.
本発明は上記事情にもとづいてなされたもので、酸化防
止層として従来よりも高い耐酸化性をもつ材料を用いる
ことにより空気中および基板からの酸化を防止し、長期
間の使用に耐え得ろ情報記録媒体を提供することを目的
とする。The present invention has been made based on the above circumstances, and by using a material with higher oxidation resistance than conventional ones as an oxidation-preventing layer, it can prevent oxidation from the air and from the substrate, and can withstand long-term use. The purpose is to provide recording media.
本発明は上記目的を達成するために従来用いられていた
酸化珪素膜よりも酸化防止作用の大きい酸素を炭素でお
き換えた炭化珪素膜で記録層に付着させることにより酸
化を防止するようにしたことを特徴とするものである。In order to achieve the above object, the present invention prevents oxidation by attaching to the recording layer a silicon carbide film in which oxygen is replaced with carbon, which has a greater anti-oxidation effect than the conventionally used silicon oxide film. It is characterized by this.
以下、本発明を1ン1面に示す一実施例にもとづいて説
明する。図中、(1)はアクリル、ポリカーボネート、
ガラスなどの材質からなる基板、(2)はTeまたはT
eを含むカルコゲナイド材の記録層、(3a)。Hereinafter, the present invention will be explained based on one embodiment shown on page 1. In the figure, (1) is acrylic, polycarbonate,
Substrate made of material such as glass, (2) is Te or T
(3a) a recording layer of chalcogenide material containing e.
(3b)は上記記録層(2)の上面、下面に成膜される
炭化珪素膜を用いた酸化防止層である。(3b) is an anti-oxidation layer using a silicon carbide film formed on the upper and lower surfaces of the recording layer (2).
つぎに、本発明による情報記録媒体の作成方法を説明す
る。まず、メタン雰囲気中において基板(1)上に珪素
をターゲットとじてスパッタリングすることにより炭化
珪素層(3a)を成膜する。つぎに、上記炭化珪素層(
3a)上にTeをターゲットどしてスパッタリングする
ことにより記録11 +21を積層する。Next, a method for producing an information recording medium according to the present invention will be explained. First, a silicon carbide layer (3a) is formed on the substrate (1) by sputtering using silicon as a target in a methane atmosphere. Next, the silicon carbide layer (
3a) Recordings 11+21 are laminated on top by sputtering using Te as a target.
そして、最後に最初と同様の方法で上記記録N(21上
に炭化珪素層(3b)を積層して完成する。このとき、
酸化防止用炭化珪素層(3a) 、 (3b)の膜厚は
記録層(2)の上部、下部とも約100OA、記録層1
2)の膜厚は500Aである。また、珪素をターゲット
る。Finally, the silicon carbide layer (3b) is laminated on the recording N (21) in the same manner as the beginning. At this time,
The thickness of the silicon carbide layers (3a) and (3b) for preventing oxidation is approximately 100 OA on both the upper and lower parts of the recording layer (2),
The film thickness of 2) is 500A. It also targets silicon.
このような方法で作成した記録媒体を用いて記録、消去
の繰返しを行なった結果、所期の目的を達成することが
確認され、さらにこの記録媒体に対し高温、高温中で劣
化試験を行なった結果、炭化珪素膜は酸化防止層として
の効果が極めて顕著であることが立証された。As a result of repeated recording and erasing using a recording medium created in this way, it was confirmed that the intended purpose was achieved, and the recording medium was further subjected to a deterioration test at high temperatures. As a result, it was proved that the silicon carbide film has an extremely significant effect as an anti-oxidation layer.
なお、上記実施例では炭化珪素膜を記録層の上。Note that in the above embodiment, a silicon carbide film is placed on the recording layer.
部、下部に積層して構成したが、必ずしもこれに限定さ
れるもので、はなく記録層の上部にのみ炭化珪素膜を積
層することにより基板側C二多少の酸化が考えられるが
、実用上は差支えない。Although the silicon carbide film is laminated on the top and bottom of the recording layer, it is not necessarily limited to this, and by laminating the silicon carbide film only on the top of the recording layer, some oxidation may occur on the substrate side, but it is not practical. There is no problem with the above.
以上説明したように本発明によれば記録層の片面または
両面に層形成される炭化珪素膜は従来の酸化珪素膜に比
べて化学的に安定しており、水分、アルカリイオンに対
するブロック効果が大きく機械的強度にも優れた利点を
有している。また、酸化珪素膜に比べて記録層との接着
性が良好であるためクラックが発生するという現象はな
く、さらには記録層の蒸発を防ぐことにより結晶から非
晶質へ、あるいは非晶質から結晶への相変化域を広げる
ことができて記録、消去時の圧力を下げることが可能で
ある。また、熱伝導率が低いため熱の拡散を防止し、ス
ポット径を絞ることができるといった他の効果も有して
おり、記録層の酸化防止層として優れた特性をもつもの
である。As explained above, according to the present invention, the silicon carbide film formed on one or both sides of the recording layer is chemically more stable than conventional silicon oxide films, and has a greater blocking effect against moisture and alkali ions. It also has the advantage of excellent mechanical strength. In addition, since it has better adhesion with the recording layer than a silicon oxide film, there is no phenomenon of cracks occurring, and furthermore, by preventing the evaporation of the recording layer, it changes from crystalline to amorphous, or from amorphous to amorphous. It is possible to widen the phase change region of the crystal and reduce the pressure during recording and erasing. In addition, because of its low thermal conductivity, it has other effects such as preventing heat diffusion and narrowing the spot diameter, and has excellent properties as an oxidation-preventing layer of a recording layer.
図面は本発明の一実施例を示す情報記録媒体の層構成図
である。
■・・・基板 2・・・記録層3a、3
b・・・炭化珪素層
)Z 面The drawing is a layer configuration diagram of an information recording medium showing an embodiment of the present invention. ■...Substrate 2...Recording layer 3a, 3
b...silicon carbide layer) Z plane
Claims (4)
おいて、基板と、この基板上に形成した記録層と、この
記録層を保護するように設けた炭化珪素層とを具備した
ことを特徴とする情報記録媒体。(1) An information recording medium in which information is recorded using focused light, including a substrate, a recording layer formed on the substrate, and a silicon carbide layer provided to protect the recording layer. Characteristic information recording media.
より形成されることを特徴とする特許請求の範囲第1項
記載の情報記録媒体。(2) The information recording medium according to claim 1, wherein the recording layer is formed of Te or chalcogenide containing Te.
特徴とする特許請求の範囲第1項記載の情報記録媒体。(3) The information recording medium according to claim 1, wherein the silicon carbide layer is formed only on the upper part of the recording layer.
の間に形成したことを特徴とする特許請求の範囲第1項
記載の情報記録媒体。(4) The information recording medium according to claim 1, wherein the silicon carbide layer is formed above the recording layer and between the recording layer and the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60005792A JPS61168146A (en) | 1985-01-18 | 1985-01-18 | Information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60005792A JPS61168146A (en) | 1985-01-18 | 1985-01-18 | Information recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61168146A true JPS61168146A (en) | 1986-07-29 |
Family
ID=11620934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60005792A Pending JPS61168146A (en) | 1985-01-18 | 1985-01-18 | Information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61168146A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5607763A (en) * | 1993-04-07 | 1997-03-04 | Minnesota Mining And Manufacturing Company | Decorative film with PSA for easy application |
-
1985
- 1985-01-18 JP JP60005792A patent/JPS61168146A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5607763A (en) * | 1993-04-07 | 1997-03-04 | Minnesota Mining And Manufacturing Company | Decorative film with PSA for easy application |
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