JPS6116686Y2 - - Google Patents
Info
- Publication number
- JPS6116686Y2 JPS6116686Y2 JP6543480U JP6543480U JPS6116686Y2 JP S6116686 Y2 JPS6116686 Y2 JP S6116686Y2 JP 6543480 U JP6543480 U JP 6543480U JP 6543480 U JP6543480 U JP 6543480U JP S6116686 Y2 JPS6116686 Y2 JP S6116686Y2
- Authority
- JP
- Japan
- Prior art keywords
- boat
- substrate
- substrate holding
- holding boat
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【考案の詳細な説明】
この考案は、基板の加熱処理に際して基板を保
持する基板保持用ボートに関するものである。[Detailed Description of the Invention] This invention relates to a substrate holding boat that holds a substrate during heat treatment of the substrate.
以下、半導体基板を熱処理するときに半導体基
板を保持する基板保持用ボートを例に取つて説明
する。 Hereinafter, a description will be given of an example of a substrate holding boat that holds a semiconductor substrate when the semiconductor substrate is subjected to heat treatment.
第1図は従来の基板保持用ボートに半導体基板
を載置した状態を示す斜視図である。第1図にお
いて、1は半導体基板、2は石英ガラスからなり
半導体基板1を保持する基板保持用ボート、21
は基板保持用ボート2の枠体、22は枠体21の
上部に多数個形成された溝である。 FIG. 1 is a perspective view showing a state in which a semiconductor substrate is placed on a conventional substrate holding boat. In FIG. 1, 1 is a semiconductor substrate, 2 is a substrate holding boat made of quartz glass, and holds the semiconductor substrate 1;
2 is a frame of the substrate holding boat 2, and 22 is a plurality of grooves formed in the upper part of the frame 21.
第2図は熱処理炉にて半導体基板を熱処理する
状態を示す断面図である。第2図において、3は
熱処理炉、31は加熱用の炉体、32は円形状の
断面を有し、その中で熱処理が行われる反応管で
ある石英管、321は石英管32へキヤリヤガス
を導入するためのガス導入口、322は石英管3
2からキヤリヤガスを排出するためのガス排出口
である。第3図は石英管の断面と共に示す従来の
基板保持用ボートの正面図である。 FIG. 2 is a sectional view showing a state in which a semiconductor substrate is heat treated in a heat treatment furnace. In FIG. 2, 3 is a heat treatment furnace, 31 is a heating furnace body, 32 is a quartz tube with a circular cross section and is a reaction tube in which heat treatment is carried out, and 321 is a carrier gas supplied to the quartz tube 32. A gas inlet for introducing gas, 322 is a quartz tube 3
This is a gas exhaust port for discharging carrier gas from 2. FIG. 3 is a front view of a conventional substrate holding boat shown together with a cross section of a quartz tube.
第1図に示すように、半導体基板1を基板保持
用ボート2に載置し、この基板保持用ボート2
を、第2図および第3図に示すように熱処理炉3
にそう入して、半導体基板1への不純物拡散、熱
酸化膜成長などの熱処理を行う。この際、石英管
32と基板保持用ボート2との接点(第3図にて
Pにて示す)においては、基板保持用ボート2を
石英管32内に出し入れする都度に摩擦が生じ
る。 As shown in FIG. 1, a semiconductor substrate 1 is placed on a substrate holding boat 2, and this substrate holding boat 2 is
, as shown in FIGS. 2 and 3, in a heat treatment furnace 3.
Then, heat treatment such as impurity diffusion and thermal oxide film growth into the semiconductor substrate 1 is performed. At this time, friction occurs at the contact point between the quartz tube 32 and the substrate holding boat 2 (indicated by P in FIG. 3) each time the substrate holding boat 2 is inserted into and taken out of the quartz tube 32.
近年、半導体基板1の直径は、半導体素子の収
率向上のため増大する一方であり、直径3〜5イ
ンチのものが用いられるが、その場合に摩擦力は
非常に大きくなる。また、摩擦の際に生ずる石英
ガラスの砕片は高温下で半導体基板1の表面に固
着するために、半導体基板1の諸特性を劣化させ
る。 In recent years, the diameter of the semiconductor substrate 1 has been increasing to improve the yield of semiconductor devices, and a diameter of 3 to 5 inches is used, but in this case, the frictional force becomes very large. In addition, the quartz glass fragments generated during friction adhere to the surface of the semiconductor substrate 1 at high temperatures, thereby degrading various properties of the semiconductor substrate 1.
これらの不具合な点を除去するために、近年、
パドルと称し車輪を具備したボート受台に基板保
持用ボートを載置する方法が行われている。この
従来のボート受台に保持用ボートを載せた装置で
は、石英管の内径を大きくしなければらなかつ
た。しかしながら、半導体基板の熱処理の経済性
を追求する際、できるだけ小口径の石英管を用い
て、許容される最大の口径の半導体基板を処理す
ることが望ましい。 In order to eliminate these problems, in recent years,
A method is used in which a boat for holding a substrate is placed on a boat pedestal called a paddle and equipped with wheels. In this conventional device in which a holding boat is mounted on a boat pedestal, the inner diameter of the quartz tube must be increased. However, when pursuing economical efficiency in heat treatment of semiconductor substrates, it is desirable to use a quartz tube with a diameter as small as possible to process a semiconductor substrate of the maximum allowable diameter.
この考案は、上記の事情に鑑みてなされたもの
であり、基板保持用ボートのボート本体の上面に
跨座しこのボート本体に回転自在に支持された車
軸の両端部に車輪を設け、この車輪の外円周の下
部がボート本体の下面より下方に出ないように
し、熱処理炉の反応管との摩擦を軽減し、かつ、
反応管の内径を大きくしなくてもよい基板保持用
ボートを提供することを目的としたものである。 This idea was made in view of the above circumstances, and wheels are provided at both ends of an axle that straddles the top surface of the boat body of the board holding boat and is rotatably supported by the boat body. The lower part of the outer circumference of the boat is prevented from protruding below the lower surface of the boat body to reduce friction with the reaction tube of the heat treatment furnace, and
The object of the present invention is to provide a substrate holding boat that does not require increasing the inner diameter of the reaction tube.
以下、実施例に基づいてこの考案を説明する。 This invention will be explained below based on examples.
第4図はこの考案による基板保持用ボートの一
実施例に半導体基板を載置した状態を示す斜視
図、第5図は石英管の断面と共に示す実施例の基
板保持用ボートの正面図である。第4図および第
5図において、第1図〜第3図と同一符号は第1
図〜第3図にて示したものと同様のものを表わし
ている。4は実施例の基板保持用ボート、41は
石英ガラスからなり基板保持用ボート4のボート
本体を構成する枠体、42は枠体41の上部に多
数個形成された溝、43は石英ガラスからなり枠
体41の両端部にそれぞれ跨座しこの枠体41に
回軸自在に支持された車軸、44は石英ガラスか
らなり車軸43の両端に融接された車輪で、外円
周の下部が枠体41の下面より下方に出ないよう
にしている。45は石英ガラスからなり両端部が
枠体41に融接された車軸43を回転自在に支持
する軸受けである。 FIG. 4 is a perspective view showing a state in which a semiconductor substrate is placed on an embodiment of the substrate holding boat according to this invention, and FIG. 5 is a front view of the substrate holding boat of the embodiment shown together with a cross section of a quartz tube. . In Figures 4 and 5, the same reference numerals as in Figures 1 to 3 refer to 1.
It represents something similar to that shown in FIGS. 4 is a substrate holding boat of the embodiment; 41 is a frame made of quartz glass and constitutes the boat body of the substrate holding boat 4; 42 is a large number of grooves formed in the upper part of the frame 41; 43 is made of quartz glass; The axle 44 is made of quartz glass and is fused to both ends of the axle 43. The axle 44 is made of quartz glass and is fused to both ends of the axle 43. It is made so that it does not protrude below the lower surface of the frame body 41. A bearing 45 is made of quartz glass and rotatably supports the axle 43, which has both ends fused to the frame 41.
実施例の基板保持用ボート4を石英管32にそ
う入した場合、枠体41は石英管32と1〜3mm
離れて位置するようになつており、石英管32と
車輪44とは第5図に示す接点Qにおいて接し、
枠体41と石英管32とを遊離させている。車軸
43を枠体41の上方に位置させているため、石
英管32内での枠体41の位置は、従来の基板保
持用ボート2を使用した場合に比べてほとんど変
らない。従つて、実施例の基板保持用ボート4を
使つても、石英管32の内径を大きくする必要は
ほとんどない。従つて、半導体基板1の無駄のな
い熱処理が可能である。 When the substrate holding boat 4 of the embodiment is inserted into the quartz tube 32, the frame body 41 is 1 to 3 mm apart from the quartz tube 32.
The quartz tube 32 and the wheel 44 come into contact at a contact point Q shown in FIG.
The frame body 41 and the quartz tube 32 are separated. Since the axle 43 is located above the frame 41, the position of the frame 41 within the quartz tube 32 is almost unchanged compared to when the conventional substrate holding boat 2 is used. Therefore, even if the substrate holding boat 4 of the embodiment is used, there is almost no need to increase the inner diameter of the quartz tube 32. Therefore, efficient heat treatment of the semiconductor substrate 1 is possible.
また、基板保持用ボート4を石英管32に出し
入れする場合、車輪44の転動を利用するため、
基板保持用ボート4と石英管32の摩擦は大幅に
軽減されるから、作業が円滑化し、かつ石英ガラ
スの砕粉の発生は極めて少なくなり、砕粉による
半導体基板1の特性の低下が防止される。 Furthermore, when the substrate holding boat 4 is moved in and out of the quartz tube 32, the rolling of the wheels 44 is used.
Since the friction between the substrate holding boat 4 and the quartz tube 32 is significantly reduced, the work becomes smoother, and the occurrence of crushed quartz glass particles is extremely reduced, thereby preventing deterioration of the characteristics of the semiconductor substrate 1 due to the crushed particles. Ru.
上記の実施例においては、基板保持用ボートの
ボート本体が枠体である場合について述べたが、
ボート本体が板状体や棒状体である基板保持用ボ
ートにも、この考案を適用できる。 In the above embodiment, the case where the boat body of the substrate holding boat is a frame body is described.
This invention can also be applied to a substrate holding boat whose main body is a plate-shaped body or a rod-shaped body.
また、上記の実施例においては、基板保持用ボ
ートの構成部品がすべて石英ガラスで作製されて
いる場合について述べたが、少なくとも一部の構
成部品を、他の耐熱性材料、例えば、シリコンカ
ーバイト、シリコン、アルミナセラミツクスなど
で構成しても、同様の効果が得られる。 In addition, in the above embodiment, all the components of the substrate holding boat were made of quartz glass, but at least some of the components could be made of other heat-resistant materials, such as silicon carbide. , silicon, alumina ceramics, etc., similar effects can be obtained.
さらに、上記の実施例においては、半導体基板
を熱処理する場合に使用する基板保持用ボートつ
いて述べたが、半導体基板以外の基板を熱処理す
る場合に使用する基板保持用ボートにもこの考案
を適用することができる。 Furthermore, in the above embodiment, a substrate holding boat used when heat treating a semiconductor substrate was described, but this idea can also be applied to a substrate holding boat used when heat treating a substrate other than a semiconductor substrate. be able to.
以上説明したように、この考案による基板保持
用ボートは、基板保持用ボートの本体の上面に跨
座しこの本体に回転自在に支持されている車軸の
両端部に車輪が設けられていて、この車輪の外円
周の下部がボート本体の下面より下に出ないよう
にしてあり、熱処理管の内壁に対するこの車輪の
転動を利用して反応管中へそう入されるから、基
板保持用ボートと反応管との摩擦が大幅に軽減さ
れ、作業が円滑化されると共に、摩擦による砕粉
の発生は極めて少なくなり、砕粉による基板の特
性の低下を防止することができる。また反応管の
内径を大きくする必要はほとんどないから、無駄
のない熱処理を行うことができる。 As explained above, the substrate holding boat according to this invention has wheels at both ends of an axle that sits on the top surface of the main body of the substrate holding boat and is rotatably supported by the main body. The lower part of the outer circumference of the wheel is designed so that it does not protrude below the bottom surface of the boat body, and the rolling of the wheel against the inner wall of the heat treatment tube is used to insert it into the reaction tube. The friction between the substrate and the reaction tube is significantly reduced, making work smoother, and the generation of crushed powder due to friction is extremely reduced, making it possible to prevent deterioration of the characteristics of the substrate due to crushed powder. Furthermore, since there is almost no need to increase the inner diameter of the reaction tube, efficient heat treatment can be performed.
第1図は従来の基板保持用ボートに半導体基板
を載置した状態を示す斜視図、第2図は熱処理炉
にて半導体基板を熱処理する状態を示す断面図、
第3図は石英管の断面と共に示す従来の基板保持
用ボートの正面図、第4図はこの考案による基板
保持用ボートの一実施例に半導体基板を載置した
状態を示す斜視図、第5図は石英管の断面と共に
示す実施例の基板保持用ボートの正面図である。
図において、1は半導体基板(被処理基板)、
3は熱処理炉、32は石英管(反応管)、4は実
施例の基板保持用ボート、41は枠体(ボート本
体)、43は車軸、44は車輪である。なお、図
中同一符号はそれぞれ同一または相当部分を示
す。
FIG. 1 is a perspective view showing a state in which a semiconductor substrate is placed on a conventional substrate holding boat, and FIG. 2 is a cross-sectional view showing a state in which a semiconductor substrate is heat-treated in a heat treatment furnace.
FIG. 3 is a front view of a conventional substrate holding boat shown together with a cross section of a quartz tube, FIG. 4 is a perspective view showing a state in which a semiconductor substrate is placed on an embodiment of the substrate holding boat according to this invention, and FIG. The figure is a front view of the substrate holding boat of the embodiment shown together with a cross section of a quartz tube. In the figure, 1 is a semiconductor substrate (substrate to be processed);
3 is a heat treatment furnace, 32 is a quartz tube (reaction tube), 4 is a substrate holding boat of the embodiment, 41 is a frame (boat body), 43 is an axle, and 44 is a wheel. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
上面に跨座しこのボート本体に回転自在に支持さ
れた少なくとも2個の車軸、およびこの車軸の両
端部に設けられ、外円周の下部が上記ボート本体
の下面より下方に出ないようにされた車軸を備
え、被処理基板を保持した状態で熱処理炉の反応
管内へ上記車軸の上記反応管の内壁に接す転動を
利用してそう入されるようにした基板保持用ボー
ト。 At least two axles are mounted on the upper surface of the boat body on which the substrate to be processed is placed and held, and are rotatably supported by the boat body, and at least two axles are provided at both ends of the axles, and the lower part of the outer circumference is The boat is equipped with an axle that does not protrude below the bottom surface of the boat body, and uses the rolling movement of the axle in contact with the inner wall of the reaction tube to move the substrate into the reaction tube of the heat treatment furnace while holding the substrate to be processed. A boat for holding substrates.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6543480U JPS6116686Y2 (en) | 1980-05-12 | 1980-05-12 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6543480U JPS6116686Y2 (en) | 1980-05-12 | 1980-05-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56164546U JPS56164546U (en) | 1981-12-07 |
JPS6116686Y2 true JPS6116686Y2 (en) | 1986-05-22 |
Family
ID=29659584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6543480U Expired JPS6116686Y2 (en) | 1980-05-12 | 1980-05-12 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6116686Y2 (en) |
-
1980
- 1980-05-12 JP JP6543480U patent/JPS6116686Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS56164546U (en) | 1981-12-07 |
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