JPS61166035A - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPS61166035A JPS61166035A JP60274901A JP27490185A JPS61166035A JP S61166035 A JPS61166035 A JP S61166035A JP 60274901 A JP60274901 A JP 60274901A JP 27490185 A JP27490185 A JP 27490185A JP S61166035 A JPS61166035 A JP S61166035A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- piezoelectric element
- wire bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明はワイヤボンディング方法特に超音波ワイヤボン
ディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to wire bonding methods, particularly ultrasonic wire bonding methods.
半導体装置、集積回路装置等の製造においては。In the manufacture of semiconductor devices, integrated circuit devices, etc.
回路素子を形成したペレットの電極と外部リードの内端
な金線、アルミニウム線で接続（ボンディング）する工
程がある。このワイヤボンディングを行なう方法の一つ
として、超音波ワイヤボンディング方法が知られている
。この方法は、ウェッジでワイヤを接続面に押し付けな
がらウェッジを一方向に振動させ、ワイヤを接続面に接
続する。There is a process of connecting (bonding) the electrodes of the pellet on which the circuit elements are formed with the inner ends of the external leads using gold wires or aluminum wires. An ultrasonic wire bonding method is known as one of the methods for performing this wire bonding. This method connects the wire to the connection surface by vibrating the wedge in one direction while pressing the wire against the connection surface.
しかし、この方法では常にワイヤの延在する方向をウェ
ッジの振動方向に一致させて行なわないと、ワイヤがウ
ェッジ下端面真下からはずれ、ウェッジによってワイヤ
を接続面に押しつけることができなくなることがあるた
め確実な接続ができない。However, with this method, if you do not always align the direction in which the wire extends with the vibration direction of the wedge, the wire may come off from directly below the bottom end of the wedge, and the wedge may no longer be able to press the wire against the connection surface. Unable to establish a reliable connection.
そこで１本出願人はワイヤの延在する方向がどの方向で
あろうとも、ワイヤがウェッジ下端面よりにげない超音
波ワイヤボンディング方法を既に提案している。これは
、筒状のキャピラリで筒内にワイヤを保持し、キャピラ
リの下端中央から繰り出すワイヤ先端を、キャピラリの
ドーナツ状の下端面で第１接続点（接続面）に押し付け
ながらキャピラリを振動させ、ワイヤを接続面に接続し
。Therefore, the present applicant has already proposed an ultrasonic wire bonding method in which the wire does not deviate from the lower end surface of the wedge, regardless of the direction in which the wire extends. This involves holding a wire inside the tube with a cylindrical capillary, and vibrating the capillary while pressing the tip of the wire that comes out from the center of the lower end of the capillary against the first connection point (connection surface) with the donut-shaped lower end surface of the capillary. Connect the wire to the connection surface.
その後、キャピラリからワイヤを繰り出しながらキャピ
ラリを第２接続点（接続面）Ｋ移動させ、再びワイヤを
第２接続面に押し付けながら振動させてワイヤを第２接
続面にボンディングする方法である、また、第２接続面
にワイヤボンディングした後は、キャピラリを上昇させ
ると同時に、ワイヤをクランパで一時的にクランプし、
ワイヤな引っ張ることによりて、接合部近傍で破断させ
、つぎのワイヤボンディングに備える。Thereafter, the capillary is moved to the second connection point (connection surface) K while feeding out the wire from the capillary, and the wire is vibrated while being pressed against the second connection surface again to bond the wire to the second connection surface. After wire bonding to the second connection surface, the capillary is raised and at the same time the wire is temporarily clamped with a clamper.
By pulling the wire, it is broken in the vicinity of the joint, in preparation for the next wire bonding.
このような方法によれば、ワイヤは筒状のキャピラリの
中央から延在するため、如何なる半径方向に延びても確
実にキャピラリの端面で押圧される。According to such a method, since the wire extends from the center of the cylindrical capillary, it is reliably pressed against the end face of the capillary no matter what radial direction the wire extends.
ところで、このような方法であっても、ワイヤの接合部
の強度にばらつきを生じることが明らかとなった。すな
わち、ワイヤはキャピラリ端面で確実に接続面に押圧さ
れるが、キャピラリの振動方向は常に一定であることか
ら、ワイヤをその半径方向に振動させたり、あるいは最
も接合強度の強くなるワイヤの軸方向に沿って振動させ
たりする。このため、ワイヤの半径方向に抑圧振動させ
た場合には、ワイヤが転ろがったりし易く１強い接合強
度が得られないことがある。By the way, it has become clear that even with such a method, variations occur in the strength of the bonded portions of the wires. In other words, the wire is reliably pressed against the connection surface by the end face of the capillary, but since the direction of vibration of the capillary is always constant, it is possible to vibrate the wire in its radial direction, or in the axial direction of the wire where the bonding strength is strongest. vibrate along the same lines. For this reason, when the wire is subjected to suppressed vibration in the radial direction, the wire tends to roll and a strong bonding strength may not be obtained.
一方、チタン酸バリウム、チタン酸ジルコン酸鉛（ＰＺ
Ｔ）等の圧電磁気材料から作りた圧電素子で、高周波を
印加すると各部が中心から半径方向に振動するものがあ
ることが知られている。On the other hand, barium titanate, lead zirconate titanate (PZ
It is known that there are piezoelectric elements made from piezomagnetic materials such as T) whose parts vibrate in the radial direction from the center when high frequency is applied.
そこで１本発明者はこのような動作をする圧電素子を利
用することを思い付き本発明を成した。Therefore, the inventor of the present invention came up with the idea of using a piezoelectric element that operates in this manner, and completed the present invention.
したがって１本発明の目的は、ワイヤボンディングにお
いて、接合強度の強いボンディングを行なうことができ
るワイヤボンディング方法を提供することにある。Therefore, one object of the present invention is to provide a wire bonding method that can perform bonding with high bonding strength.
以下実施例により本発明を具体的に説明する。The present invention will be specifically explained below using Examples.
第１図は本発明の前提となりた超音波ワイヤボンディン
グ装置の一実施例、特にボンディングヘッド部を示す。FIG. 1 shows an embodiment of an ultrasonic wire bonding apparatus, which is the premise of the present invention, and particularly shows a bonding head portion.
同図にはボンディングアーム１が示されている。このボ
ンディングアーム１の先端忙は筒状のキャピラリ本体２
が固定されている。A bonding arm 1 is shown in the figure. The tip of this bonding arm 1 has a cylindrical capillary body 2.
is fixed.
また、このキャピラリ本体２の下端にはチタン酸バリウ
ム、チタン酸ジルコン酸鉛（ＰＺＴ ）等の圧電磁気材
料からなるドーナツ状の圧電素子３が固定されている。Further, a donut-shaped piezoelectric element 3 made of a piezoelectric magnetic material such as barium titanate or lead zirconate titanate (PZT) is fixed to the lower end of the capillary body 2.
そして、これら圧電素子３およびキャピラリ本体２の中
央をワイヤ４が通るよう忙なっている。また、第２図で
示すように前記圧電素子３の内壁および外壁にはそれぞ
れ電極５゜６が設けられていて、これら電極５，６には
高周波電圧をボンディング時印加するようになっている
。The wire 4 is arranged to pass through the center of the piezoelectric element 3 and the capillary body 2. Further, as shown in FIG. 2, electrodes 5 and 6 are provided on the inner and outer walls of the piezoelectric element 3, respectively, and a high frequency voltage is applied to these electrodes 5 and 6 during bonding.
つぎにボンディングについて説明する。まず。Next, bonding will be explained. first.
圧電素子３の下端中央の孔からワイヤ４の先端を突出さ
せて屈曲させた後、ボンディングアームｌを降下させ、
ペレット７の電極部８に対し圧電素子３下面でワイヤ４
を押し付ける。その後、圧電素子３の電極５，６に高周
波電圧を印加し、圧電素子３を振動させて、ワイヤ４と
電極部８との接続を図る。この際、第２図で示すように
、圧電素子３の各部は半径方向に振動することから、圧
電素子３の下端から突出して延びるワイヤ４の方向が如
何なる方向であっても、ワイヤ４はその軸方向に振動を
受けてボンディングされる。したがって１強い接合強度
のボンディングができる。After protruding the tip of the wire 4 from the hole at the center of the lower end of the piezoelectric element 3 and bending it, the bonding arm l is lowered,
The wire 4 is connected to the bottom surface of the piezoelectric element 3 against the electrode part 8 of the pellet 7.
to impose. Thereafter, a high frequency voltage is applied to the electrodes 5 and 6 of the piezoelectric element 3 to vibrate the piezoelectric element 3, thereby establishing a connection between the wire 4 and the electrode section 8. At this time, as shown in FIG. 2, each part of the piezoelectric element 3 vibrates in the radial direction. Bonding occurs when vibration is applied in the axial direction. Therefore, bonding with a strong bonding strength can be achieved.
ｆた、ペレット７の電極部８にワイヤ４を接続した後、
ボンディングアーム１は上昇、水平移動してリード９上
にキャピラリ本体２を臨ませ、再び降下させて前記同様
にリード９にワイヤ４を接続する。この場合にも、ワイ
ヤ４はその軸方向に沿う振動を受けることから、強固な
接続が成される。その後、ボンディングアーム１の上昇
に伴ない、キャピラリ本体２の上方に設けられる図示し
ないクランプ機構でワイヤ４を一時的にクランプして引
っ張り、ワイヤ４をリード９との接合部近傍から破断さ
せ、つぎのワイヤ張りに備える。After connecting the wire 4 to the electrode part 8 of the pellet 7,
The bonding arm 1 rises and moves horizontally to expose the capillary body 2 above the lead 9, and is lowered again to connect the wire 4 to the lead 9 in the same manner as described above. In this case as well, since the wire 4 is subjected to vibration along its axial direction, a strong connection is achieved. Thereafter, as the bonding arm 1 rises, the wire 4 is temporarily clamped and pulled by a clamp mechanism (not shown) provided above the capillary body 2, and the wire 4 is broken near the joint with the lead 9. Prepare for wire tensioning.
このようなボンディング装置によれば、ボンディング時
、ワイヤが如何なる方向に延びていても、ワイヤは圧電
素子の中央から延びることと、この圧電素子のドーナツ
部分各部は半径方向に振動するため、常にワイヤは軸方
向の振動を受けながら接続される。したがって、常に強
い接合状態でボンディングできることになり、ボンディ
ングの信頼度も向上する。According to such a bonding device, no matter what direction the wire extends during bonding, the wire always extends from the center of the piezoelectric element, and each part of the donut part of the piezoelectric element vibrates in the radial direction. are connected while receiving axial vibration. Therefore, bonding can always be performed in a strong bonded state, and the reliability of bonding is also improved.
本発明の実施例は第３図に示すように、ボンディングア
ーム１０の先端忙固定される筒状のキャピラリ１１の上
部筒内に円柱状の圧電素子１２を圧入しておく。また前
記圧電素子１２の上下面には電極１３．１４を設け、こ
れら電極１３．１４間に高周波電圧を印加させて、圧電
素子１２各部を半径方向に振動させる。また、圧電素子
１２が圧入されているキャピラリ部分の中央部分から下
方のキャピラリ部分には、キャピラリ１１の長さ方向に
沿って複数のスリット１５が設けられている。これらス
リット１５はキャピラリ１１０半径方向に延び、キャピ
ラリの下部を細い円弧断面の振動片１６の集合体として
いる。また、振動片１６の一つにはワイヤ１７をキャピ
ラリ内の筒内に導く案内孔１８が設けられている。した
がって、ワイヤ１７はこの案内孔１８からキャピラリ内
に入り、振動片１６の集合体からなるドーナツ状のキャ
ピラリ端面から突出するようＫなる。さらに。In the embodiment of the present invention, as shown in FIG. 3, a cylindrical piezoelectric element 12 is press-fitted into the upper tube of a cylindrical capillary 11 to which the tip of a bonding arm 10 is fixed. Further, electrodes 13 and 14 are provided on the upper and lower surfaces of the piezoelectric element 12, and a high frequency voltage is applied between these electrodes 13 and 14 to vibrate each part of the piezoelectric element 12 in the radial direction. Further, a plurality of slits 15 are provided along the length direction of the capillary 11 in the capillary portion below the center portion of the capillary portion into which the piezoelectric element 12 is press-fitted. These slits 15 extend in the radial direction of the capillary 110, and make the lower part of the capillary an assembly of vibrating pieces 16 having a thin circular arc cross section. Further, one of the vibrating pieces 16 is provided with a guide hole 18 for guiding the wire 17 into the cylinder inside the capillary. Therefore, the wire 17 enters the capillary through the guide hole 18 and projects from the donut-shaped end face of the capillary made of the aggregate of the vibrating pieces 16. moreover.
各振動片１６の下端は振動片１６の振動の腹に対応する
ようにあらかじめ作っておく。そし℃、上記スリット１
５によって分割される各片１６によりワイヤをその軸方
向に振動させてワイヤボンディングを行うものである。The lower end of each vibrating piece 16 is made in advance so as to correspond to the antinode of the vibration of the vibrating piece 16. So℃, above slit 1
Wire bonding is performed by vibrating the wire in its axial direction using each piece 16 divided by 5.
このような本発明によれば、圧電素子１２の振動を増幅
することもできるので、印加電圧も小さくできる実益も
ある。According to the present invention, since the vibration of the piezoelectric element 12 can be amplified, there is also the practical benefit of being able to reduce the applied voltage.
また、前記実施例において、圧電素子をドーナツ状にす
れば、キャピラリの一部にワイヤを案内する案内孔も不
要となる。Further, in the above embodiment, if the piezoelectric element is made into a donut shape, a guide hole for guiding the wire in a part of the capillary becomes unnecessary.
さらに、前記実施例では圧電素子の材質としてチタン酸
バリウム、チタン酸ジルコン酸鉛（ＰＺＴ）を用いたが
、これ以外のものでもよい。Furthermore, although barium titanate and lead zirconate titanate (PZT) were used as the material for the piezoelectric element in the above embodiments, other materials may be used.
以上のように、本発明の超音波ワイヤボンディング方法
によれば、常にワイヤをその軸方向に振動させてボンデ
ィングを行なうことから、接合が確実で、接合強度が強
い。したがって、信頼性の高いワイヤボンディングが行
なえる。As described above, according to the ultrasonic wire bonding method of the present invention, bonding is performed by always vibrating the wire in its axial direction, so that the bonding is reliable and the bonding strength is strong. Therefore, highly reliable wire bonding can be performed.
第１図は本発明の前提となった超音波ワイヤボンディン
グ装置の一部を示す斜視図、第２図はキャピラリ先端の
振動状態を示す一部拡大説明図。
第３図は本発明の実施例の一部を示す斜視図である。
１・・・ボンディングアーム、２・・・キャピラリ本体
、３・・・圧電素子、４・・・ワイヤ、５，６・・・電
極、７・・・ペレット、８・・・電極部、９・・・リー
ド、１０・・・ボンディングアーム、１１・・・キャピ
ラリ、１２・・・圧電素子、１３．１４・・・電極、１
５・・・スリット、１６・・・振動体、１７・・・ワイ
ヤ、１８・・・案内孔。
代理人 弁理士 小 川 勝 男
゛、−
第 １ 図FIG. 1 is a perspective view showing a part of the ultrasonic wire bonding apparatus that is the premise of the present invention, and FIG. 2 is a partially enlarged explanatory view showing the vibration state of the capillary tip. FIG. 3 is a perspective view showing a part of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Bonding arm, 2... Capillary body, 3... Piezoelectric element, 4... Wire, 5, 6... Electrode, 7... Pellet, 8... Electrode part, 9... ... Lead, 10... Bonding arm, 11... Capillary, 12... Piezoelectric element, 13.14... Electrode, 1
5... Slit, 16... Vibrating body, 17... Wire, 18... Guide hole. Agent: Patent Attorney Katsuo Ogawa - Figure 1
Claims (1)
を入れ、このスリットで分割された各片をキャピラリ中
心のワイヤ方向に動かすことによりワイヤボンディング
を行うことを特徴とするワイヤボンディング方法。1. A wire bonding method characterized by making a slit in the capillary along the length of the capillary and performing wire bonding by moving each piece divided by the slit in the direction of the wire at the center of the capillary.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60274901A JPS61166035A (en) | 1985-12-09 | 1985-12-09 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60274901A JPS61166035A (en) | 1985-12-09 | 1985-12-09 | Wire bonding method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52018199A Division JPS607383B2 (en) | 1977-02-23 | 1977-02-23 | Ultrasonic wire bonding equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61166035A true JPS61166035A (en) | 1986-07-26 |
Family
ID=17548104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60274901A Pending JPS61166035A (en) | 1985-12-09 | 1985-12-09 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166035A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536762A (en) * | 1991-08-02 | 1993-02-12 | Nec Yamagata Ltd | Semiconductor manufacturing apparatus |
| JPH06112282A (en) * | 1992-09-24 | 1994-04-22 | Nec Corp | Bonding tool and bonding method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4830221A (en) * | 1971-08-20 | 1973-04-21 | ||
| JPS50134763A (en) * | 1974-04-15 | 1975-10-25 | ||
| JPS607383A (en) * | 1983-06-28 | 1985-01-16 | Nec Corp | Time counter |
-
1985
- 1985-12-09 JP JP60274901A patent/JPS61166035A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4830221A (en) * | 1971-08-20 | 1973-04-21 | ||
| JPS50134763A (en) * | 1974-04-15 | 1975-10-25 | ||
| JPS607383A (en) * | 1983-06-28 | 1985-01-16 | Nec Corp | Time counter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536762A (en) * | 1991-08-02 | 1993-02-12 | Nec Yamagata Ltd | Semiconductor manufacturing apparatus |
| JPH06112282A (en) * | 1992-09-24 | 1994-04-22 | Nec Corp | Bonding tool and bonding method |
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