JPS61160933A - Processor for development of semiconductor substrate - Google Patents
Processor for development of semiconductor substrateInfo
- Publication number
- JPS61160933A JPS61160933A JP117085A JP117085A JPS61160933A JP S61160933 A JPS61160933 A JP S61160933A JP 117085 A JP117085 A JP 117085A JP 117085 A JP117085 A JP 117085A JP S61160933 A JPS61160933 A JP S61160933A
- Authority
- JP
- Japan
- Prior art keywords
- waste
- exhaust
- piping
- development processing
- trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子製造工程の一環であるフォトリング
ラフイエ糧の半導体基板現像処理装置に関し、特にその
廃液系が自己回収型ではなく、工場一括廃液型である半
導体基板現像処理装置に関するものである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a semiconductor substrate development processing apparatus using photophosphorography, which is a part of the semiconductor device manufacturing process. The present invention relates to a semiconductor substrate development processing apparatus that is a bulk liquid waste type.
近年、半導体素子製造工程のフォ） ＩＪソゲラフイエ
糧では微細加工化が進むにつれ、ポジＴＹＰＥの７オト
レジストの使用が増大し、その現像処理装置から発生す
る現偉液、リンス液、水等の廃液は、その発生量及び廃
液の性質上、その装置の自己回収型ではなく、工場側の
施設である廃液系配管に直接、接続されている場合が多
い。In recent years, as microfabrication has progressed in the semiconductor device manufacturing process, the use of positive type 7 photoresists has increased, and the waste liquids such as developing solution, rinsing solution, and water generated from the development processing equipment are increasing. Due to the amount of waste generated and the nature of the waste liquid, the equipment is not a self-collection type but is often connected directly to the waste liquid system piping of the factory facility.
従来技術の蓄積より良好な現像処理状態を得る為の要因
として、現像処理部の適正な排気量調整及び現倫液の温
度、散布状態の適正な調整及びリンス液量の適正な調整
及び各処理時間の適正な設定等が必要であることは周知
となっている。As a factor to obtain a better development processing condition than the accumulation of conventional technology, it is necessary to properly adjust the exhaust volume of the development processing section, the temperature of the developing solution, the dispersion state, the amount of rinsing solution, and each processing. It is well known that it is necessary to set the time appropriately.
しかしながら、前述した従来の半導体基板現像処理装置
は、その現像処理部の廃液系配管が直接、工場側の廃液
系配管に＆ｆ’絖され、その中間に排気配管を接続する
。又は、現像処理部に直接、排気配管を接続する等の手
段により排気全接続しておリ、廃液系からの排気量に対
する影響を除去することは不可能であり、現像処理部の
適正な排気量調整は困難であった。However, in the conventional semiconductor substrate processing apparatus described above, the waste liquid pipe of the development processing section is directly connected to the waste liquid pipe of the factory, and the exhaust pipe is connected in the middle thereof. Alternatively, it is impossible to completely connect the exhaust to the development processing section by directly connecting exhaust piping, etc., but it is impossible to eliminate the effect on the amount of exhaust from the waste liquid system, and it is impossible to properly exhaust the development processing section. It was difficult to adjust the amount.
返らに、工場側廃液系配管を介し、他装置による廃液の
雰囲気が逆流し現像処理に悪影響を与える場合がある。On the other hand, the atmosphere of waste liquid from other devices may flow back through the factory side waste liquid system piping and adversely affect the development process.
本発明による半導体基板現像装置は、前述した排気量に
対する影響及び廃液系配管からの雰囲気の逆流という問
題点を解決する為、半導体基板現像装置の廃液系配管に
０字配管等の廃液トラ、プ部を設け、そのトラ、プ部と
現像処理部の間に排気配管を接続するとい５廃液、排気
系配管を備えたものである。The semiconductor substrate developing apparatus according to the present invention solves the above-mentioned problems of the influence on the exhaust volume and the backflow of the atmosphere from the waste liquid system piping. The system is equipped with a waste liquid and exhaust system piping for connecting an exhaust pipe between the tank and the development processing section.
本発明を概略図により説明する。 The invention will be explained by means of schematic diagrams.
第１図は本発明の一実施例の概略図である。FIG. 1 is a schematic diagram of one embodiment of the present invention.
ｌは現像°液ノズル、リンス液ノズル、クエハスピンチ
ャ、り及びそれらを囲むカップよシ構成される現像処理
部であり、２は現像処理されるクエハで、３は１の現像
処理部に接続されている廃液。1 is a developing processing section consisting of a developing liquid nozzle, a rinsing liquid nozzle, a wafer pincher, a wafer and a cup surrounding them; 2 is a wafer to be developed; 3 is connected to the developing section 1; waste liquid.
排気系配管で６９．４は排気系配管に直接廃液が吸入す
ることを防ぐ為の排気トラ、プ部でおり、５は現像処理
動作に準じ現像処理部の排気量を調整する為の自動ダン
パーで、６は５の排気自動ダンパーを介し、４の排気ト
ラ、１部に接続されている排気系配管であ＃）７は８の
一定量の現像処理廃液を溜める０字配管の廃液トラ、プ
部で９は８の廃液トラ、１部を介し、４の排気トラ、プ
部に接続されている廃液系配管である。In the exhaust system piping, 69.4 is an exhaust trap to prevent waste liquid from being sucked directly into the exhaust system piping, and 5 is an automatic damper to adjust the exhaust volume of the development processing section according to the development processing operation. 6 is the exhaust system piping that is connected to the exhaust truck of 4 and part 1 through the automatic exhaust damper of 5.) 7 is the waste liquid tractor of the zero-shaped piping that stores a certain amount of development processing waste liquid of 8. In the pipe part, 9 is a waste liquid system piping connected to the waste liquid tank 8, the exhaust tiger 4, and the pipe part 1 through the pipe part 1.
第１図より説明される様に、本発明による半導体基板の
現像処理装置は、常に廃液トラ、プ部に一定量の現像処
理廃液が溜まっておシ、その廃液により現像処理部と廃
液系配管は遮断されている。As explained from FIG. 1, in the semiconductor substrate development processing apparatus according to the present invention, a certain amount of development processing waste solution always accumulates in the waste solution trap and the drain section, and the waste solution is transferred between the development processing section and the waste solution system piping. is blocked.
従って、前述し元現像処理部の排気量への影響及び廃液
系配管からの雰囲気の逆流という問題を本発明を採用す
ることにより解消し、良好な現像処理の条件を容易に得
ることを可能とし、半導体素子製造工程の安定化に多大
な効果をもたらす。Therefore, by adopting the present invention, the above-mentioned problems of the influence on the exhaust volume of the original development processing section and the backflow of the atmosphere from the waste liquid system piping can be solved, and it is possible to easily obtain good development processing conditions. This has a great effect on stabilizing the semiconductor device manufacturing process.
第１図は本発明の一実施例の概略図でおる。
ｌ・・・・・・現像処理部、２・・・・・・クエハ、３
・・・・・・廃液。
排気系配管、４・・・・・・排気トラ、プ部、５・・・
・・・排気自動ダンパー、６・・・・・・排気系配管、
７・・・・・・廃液トラップ部、８・・・・・・現偉処
理廃液溜まり、９・・・・・・廃液系配管。
第１図FIG. 1 is a schematic diagram of an embodiment of the present invention. l...Development processing section, 2...Queha, 3
・・・・・・Waste liquid. Exhaust system piping, 4...Exhaust truck, pipe part, 5...
...Exhaust automatic damper, 6...Exhaust system piping,
7... Waste liquid trap section, 8... Current treatment waste liquid reservoir, 9... Waste liquid system piping. Figure 1
Claims (1)
程の半導体基板現像処理装置において、該現像処理部か
らの廃液配管系にＵ字管等の廃液トラップ部を設け、該
トラップ部と現像処理部の間に排気配管を接続し該現像
処理部の排気量を調整する機能を備えたことを特徴とす
る半導体基板の現像処理装置。In a semiconductor substrate development processing apparatus for a photolithography process that is a part of the semiconductor device manufacturing process, a waste liquid trap section such as a U-shaped pipe is provided in the waste liquid piping system from the development processing section, and a waste liquid trap section such as a U-shaped pipe is provided between the trap section and the development processing section. 1. A semiconductor substrate development processing apparatus, comprising a function of connecting an exhaust pipe and adjusting an exhaust amount of the development processing section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP117085A JPS61160933A (en) | 1985-01-08 | 1985-01-08 | Processor for development of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP117085A JPS61160933A (en) | 1985-01-08 | 1985-01-08 | Processor for development of semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61160933A true JPS61160933A (en) | 1986-07-21 |
| JPH045259B2 JPH045259B2 (en) | 1992-01-30 |
Family
ID=11493958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP117085A Granted JPS61160933A (en) | 1985-01-08 | 1985-01-08 | Processor for development of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61160933A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63168025A (en) * | 1986-12-29 | 1988-07-12 | Tokyo Electron Ltd | Developer |
| US5088922A (en) * | 1990-01-23 | 1992-02-18 | Tokyo Electron Sagami Limited | Heat-treatment apparatus having exhaust system |
| JP2002187249A (en) * | 2000-12-19 | 2002-07-02 | Think Laboratory Co Ltd | A method for making, recycling, and making plates for gravure printing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5666044A (en) * | 1979-11-05 | 1981-06-04 | Toshiba Corp | Semiconductor device |
| JPS5850738A (en) * | 1981-09-21 | 1983-03-25 | Toshiba Corp | Apparatus for resist coating and development |
| JPS614576A (en) * | 1984-06-15 | 1986-01-10 | Hoya Corp | Spraying method |
-
1985
- 1985-01-08 JP JP117085A patent/JPS61160933A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5666044A (en) * | 1979-11-05 | 1981-06-04 | Toshiba Corp | Semiconductor device |
| JPS5850738A (en) * | 1981-09-21 | 1983-03-25 | Toshiba Corp | Apparatus for resist coating and development |
| JPS614576A (en) * | 1984-06-15 | 1986-01-10 | Hoya Corp | Spraying method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63168025A (en) * | 1986-12-29 | 1988-07-12 | Tokyo Electron Ltd | Developer |
| US5088922A (en) * | 1990-01-23 | 1992-02-18 | Tokyo Electron Sagami Limited | Heat-treatment apparatus having exhaust system |
| JP2002187249A (en) * | 2000-12-19 | 2002-07-02 | Think Laboratory Co Ltd | A method for making, recycling, and making plates for gravure printing |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH045259B2 (en) | 1992-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |