JPS6115302A - Semiconductor porcelain having positive temperature coefficient characteristic and method of producing same - Google Patents
Semiconductor porcelain having positive temperature coefficient characteristic and method of producing sameInfo
- Publication number
- JPS6115302A JPS6115302A JP13766284A JP13766284A JPS6115302A JP S6115302 A JPS6115302 A JP S6115302A JP 13766284 A JP13766284 A JP 13766284A JP 13766284 A JP13766284 A JP 13766284A JP S6115302 A JPS6115302 A JP S6115302A
- Authority
- JP
- Japan
- Prior art keywords
- temperature characteristics
- positive resistance
- internal electrodes
- resistance
- semiconductor porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 229910052573 porcelain Inorganic materials 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 6
- 239000010953 base metal Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 101100313164 Caenorhabditis elegans sea-1 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001089 mineralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（１）産業上の利用分野
この発明は、正の抵抗温度特性を有する積層タイプの半
導体磁器と、この半導体磁器を製造する方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (1) Industrial Application Field The present invention relates to a laminated type semiconductor porcelain having positive resistance-temperature characteristics and a method for manufacturing the semiconductor porcelain.
（２）゛従来の技術
正の抵抗温度特性を有する素子（以下ｐ −ｒ ｃ素子
という）に非オーミツク性の電極を付加して形成した半
導体磁器は特公昭５３−４６２６０等によってづでに知
られている。(2) Conventional technology Semiconductor porcelain formed by adding non-ohmic electrodes to an element having a positive resistance-temperature characteristic (hereinafter referred to as a p-rc element) was already known from Japanese Patent Publication No. 53-46260. It is being
（３）発明が解決しようとする問題点
ところで、非オーミツク性電極の採用は、ｌ ｎ−’Ｑ
ａ、ニッケル、アルミニラｌ＼、銅等のＡ−ミンク性電
極材料に比べ、電極強度やコストの面で右利であるが、
ＰＴＣ素子と非オーミツク性電極を手ねると、両者の界
面に接触抵抗によるバリヤ層が生じ、これが原因で抵抗
値が高くなり、実用的でない。(3) Problems to be solved by the invention By the way, the adoption of non-ohmic electrodes
Compared to A-mink electrode materials such as a, nickel, aluminum, and copper, it is advantageous in terms of electrode strength and cost.
If the PTC element and the non-ohmic electrode are handled, a barrier layer due to contact resistance is formed at the interface between the two, which increases the resistance value, making it impractical.
一方、Ｐ Ｔ Ｃ素子サーミスタの応用から低抵抗素子
の要求が強く、このためにはＰＴＣ素了を手ね合せた積
層構造を採用するのが有効である。On the other hand, there is a strong demand for low-resistance elements due to the application of PTC element thermistors, and for this purpose it is effective to adopt a laminated structure that is compatible with PTC performance.
このような積層構造の半導体磁器において、内部電極に
非オーミツク性のものを使用する場合、銀または銀とパ
ラジウムの合金を使用して焼成するのが一般的に考えら
れるが、このような電極材料はコスト的に高くつくとい
う問題がある。When using non-ohmic internal electrodes in semiconductor porcelain with such a laminated structure, it is generally considered to use silver or an alloy of silver and palladium and fire it. The problem is that it is expensive.
そこで、この発明は、内部電極に廉価な非オーミツク性
の材料を用いてコストダウンをはかることができ、しか
も低抵抗で品質管理の容易な正の抵抗温度特性を有する
積層形の半導２体磁器を提供できるようにすることを目
的とする。Therefore, the present invention aims to reduce costs by using an inexpensive non-ohmic material for the internal electrodes, and also to create a two-layer semiconductor structure having positive resistance-temperature characteristics with low resistance and easy quality control. The purpose is to be able to provide porcelain.
（４） 問題点を解決するための手段上記の問題点を
解決するために、第１の発明は、正の抵抗温度特性を有
する素子を重ねた積層体の各素子間に低融点の卑金属で
内部電極を注入形成したものであり、第２の発明は、正
の抵抗温度特性を有する素子を重ねた積層体の各素子間
にポーラス層を設け、このポーラス層に低融点の卑金属
を注入して内部電極を形成し、次に内部電極間にパルス
を印加して、−子と内部電極の界面に生じたバリヤ層を
破壊し、オーミック性電極と同様の抵抗値を得るように
したものである。 ゛（５） 実 −例
以下、この発明の実施例を添付図面にもとづいて説明す
る。(4) Means for Solving the Problems In order to solve the above problems, the first invention provides a layered structure in which elements having positive resistance-temperature characteristics are stacked, with a base metal having a low melting point between each element. The internal electrode is formed by injection, and the second invention provides a porous layer between each element of a stack of elements having positive resistance-temperature characteristics, and injects a base metal with a low melting point into this porous layer. In this method, an internal electrode is formed using the ohmic electrode, and then a pulse is applied between the internal electrodes to destroy the barrier layer formed at the interface between the negative electrode and the internal electrode, resulting in a resistance value similar to that of an ohmic electrode. be. (5) Practical Examples Examples of the present invention will be described below with reference to the accompanying drawings.
先ず、チタン酸バリウムに対し、半導体化剤として微量
のＹ２Ｏ３、鉱化剤として５ＬＯ２、Ｍユ０３、特性改
善剤としてＭＴｉＯ３を添加して混合し、これにバイン
ターを加゛えた材料で第１図の如き矩形状のグリーンシ
ート１を成形する。First, barium titanate was mixed with a trace amount of Y2O3 as a semiconducting agent, 5LO2 and Myu03 as mineralizing agents, and MTiO3 as a property improving agent, and a binder was added to this to create the material shown in Figure 1. A rectangular green sheet 1 as shown in FIG.
一方向じ原料粉末を空気中において１３００°Ｃで焼成
し、これを再度粉砕した焼結粉末にカーボンとワニスを
混合してペーストを作成し、このペーストをグリーンシ
ート１上に内部電極のパターンに印刷塗布する。The unidirectional raw material powder is fired at 1300°C in the air, and the sintered powder is re-pulverized, mixed with carbon and varnish to create a paste, and this paste is applied to the internal electrode pattern on the green sheet 1. Print and apply.
」二記のようなグリーンシート１とグリーンシートにペ
ースト２を塗布したグリーンシート１ａないし１ｄとを
第１図のように、ペース１〜２の端部が交互になるよう
順次積層し、これを加圧圧着した後、空気中において１
３００℃で焼成する。As shown in Fig. 1, green sheets 1 as shown in Section 2 and green sheets 1a to 1d, each of which is coated with paste 2, are stacked one on top of the other so that the edges of pastes 1 and 2 are alternate. 1 in air after pressure bonding
Fire at 300°C.
焼成が完了すると第２図に示すように、各ペースト内に
混入したカーボンが焼成して、交互に層状のポーラス層
３が形成された正の抵抗温度特性を有する半導体磁器４
が出来上る。When the firing is completed, as shown in FIG. 2, the carbon mixed in each paste is fired, forming a semiconductor porcelain 4 having positive resistance temperature characteristics in which alternately layered porous layers 3 are formed.
is completed.
次に、半導体磁器４のポーラス層３を真空中において脱
気した後、この半導体磁器４を低融点の卑金属溶液中に
浸漬し、ポーラス層３に卑金属溶液を加圧圧入する。Next, after the porous layer 3 of the semiconductor ceramic 4 is degassed in a vacuum, the semiconductor ceramic 4 is immersed in a low melting point base metal solution, and the base metal solution is injected into the porous layer 3 under pressure.
上記卑金属としては、鉛や錫またはこれらの合金あるい
け他の低融点金属をあげることができる。Examples of the base metal include lead, tin, alloys thereof, and other low melting point metals.
前記のように、ポーラス層３に卑金属溶飯を圧入すると
、内部電極５が形成でき、この半導体磁器４の両端部に
外部電極６を設けると、第３図と第４図のように完成品
となる。As mentioned above, by press-fitting the base metal melt into the porous layer 3, the internal electrodes 5 can be formed, and by providing the external electrodes 6 at both ends of the semiconductor porcelain 4, a finished product as shown in FIGS. 3 and 4 can be formed. becomes.
ちなみに、完成した半導体磁器は、長さ１０ｍｍ。By the way, the completed semiconductor porcelain is 10mm long.
幅５ ｍｍ、厚さ２ ｍｍの大きさであり、この半導体
磁器の抵抗をテスターで測定すると３〜１０Ωであった
。It has a width of 5 mm and a thickness of 2 mm, and the resistance of this semiconductor ceramic was measured with a tester and was 3 to 10 Ω.
このように、正の抵抗温度特性を有する積層体素子に非
オーミツク性である低融点の卑金属で内部電極を圧入し
て形成した半導体磁器でも、上記の如き低抵抗のものが
得られる。In this way, even semiconductor ceramics formed by press-fitting internal electrodes of a non-ohmic, low-melting point base metal into a laminate element having positive resistance-temperature characteristics can have the above-mentioned low resistance.
また、更に抵抗の低いものを１ｑるには、前記の如く完
成した半導体磁器両′外部電極６を介して対向する内部
電極５間にパルス幅１ｍｃＩＫ以下、例えば８×２０μ
５ｅｃ（Ｑパルスを２０Ａ Ｊの電流密度で極性を交互
に５回印加したところ、テスターでの測定抵抗値は０．
１〜０．２０と大幅に低下した。In addition, in order to obtain an even lower resistance of 1q, a pulse width of 1mcIK or less, for example 8x20μ, is applied between the internal electrodes 5 facing each other via the semi-conductor ceramic both external electrodes 6 completed as described above.
When a 5ec (Q pulse was applied 5 times with a current density of 20A J and polarity alternated), the resistance value measured by the tester was 0.
It decreased significantly from 1 to 0.20.
尚、パルスの印加回数と極性の変化は自由に選べばよい
。Note that the number of times the pulse is applied and the change in polarity may be freely selected.
即ち、正の抵抗温度特性を有する半導体素子に非オーミ
ツク性の内部電極を、設けると、電極と素子の界面に接
触抵抗によるバリヤ層が形成され、このバリヤ層が抵抗
を大きくすると考えられる。That is, when a non-ohmic internal electrode is provided in a semiconductor element having positive resistance-temperature characteristics, a barrier layer due to contact resistance is formed at the interface between the electrode and the element, and this barrier layer is thought to increase the resistance.
そこで、内部電極間に上記したような条件でパルスを印
加すると、印加パルスがバリヤ層を破壊し、その抵抗値
がオーミック性電極を使、用した場合と略一致すること
になる。Therefore, when a pulse is applied between the internal electrodes under the above conditions, the applied pulse destroys the barrier layer, and its resistance value becomes approximately the same as that when ohmic electrodes are used.
以上のように・、この′発明によると、正の抵抗温度特
性を有する磁器素子の積層面間に低融点の卑金属を注入
して内部電極を形成したので、電極材料のコスト低減が
可能になり、低抵抗の半導体磁器を廉価に製作提供する
ことができる。As described above, according to this invention, the internal electrodes are formed by injecting a base metal with a low melting point between the laminated surfaces of the ceramic element having positive resistance-temperature characteristics, making it possible to reduce the cost of electrode materials. , it is possible to manufacture and provide low-resistance semiconductor porcelain at low cost.
また、内部電極間にパルスを印加し、電極と素子の界面
に生じたバリヤ層を破壊するようにしたので、非オーミ
ツク性の卑金属を電極に使用して、オーミック性電極と
同じ低抵抗の磁器半導体を形成することができ、品質管
理の容易な正の抵抗温度特性を有する積層形磁器半導体
を提供できる。In addition, since a pulse was applied between the internal electrodes to destroy the barrier layer formed at the interface between the electrode and the element, a non-ohmic base metal was used for the electrode, and a porcelain material with the same low resistance as the ohmic electrode was used. It is possible to provide a laminated ceramic semiconductor that can be formed into a semiconductor and has positive resistance-temperature characteristics that can be easily controlled in quality.
第１図はこの発明に係る半導体磁器の焼成前の分解斜視
図、第２図は同上を焼成した断面図、第３図は同上に内
部電極と外部電極を設けた断面図、第４図は同上の外形
を示す斜視図である。
１・・・グリーンシー１〜 ２・・・ペースト３・・・
ポーラス層 ４・・・半導体磁器５・・・内部電極
６・・・外部電極特許出願人 株式会社 村ＩＩＩ
製作所代 理 人 弁理士 和 １）
昭手続補正古（自発）
昭和６０年４月１て一日FIG. 1 is an exploded perspective view of the semiconductor porcelain according to the present invention before firing, FIG. 2 is a sectional view of the same after firing, FIG. 3 is a sectional view of the same with internal and external electrodes provided, and FIG. 4 is a sectional view of the same before firing. It is a perspective view showing the external shape same as the above. 1...Green Sea 1~2...Paste 3...
Porous layer 4...Semiconductor ceramic 5...Internal electrode
6...External electrode patent applicant Mura III Co., Ltd.
Manufacturer representative Patent attorney Kazu 1)
Showa procedure amendment old (voluntary) April 1, 1985
Claims (3)
各素子間に、低融点の卑金属で内部電極を注入形成した
正の抵抗温度特性を有する半導体磁器。(1) Semiconductor porcelain having positive resistance-temperature characteristics, in which internal electrodes of low-melting point base metal are injected between each element of a stacked body in which elements having positive resistance-temperature characteristics are stacked.
各素子間にポーラス層を設け、このポーラス層に低融点
の卑金属を注入して内部電極を形成し、次に内部電極間
にパルスを印加して素子と内部電極の界面に生じたバリ
ヤ層を破壊することを特徴とする正の抵抗温度特性を有
する半導体磁器の製造方法。(2) A porous layer is provided between each element of a stack of elements with positive resistance-temperature characteristics, and internal electrodes are formed by injecting a base metal with a low melting point into this porous layer, and then an internal electrode is formed between the internal electrodes. A method for manufacturing semiconductor ceramics having positive resistance-temperature characteristics, characterized in that a pulse is applied to destroy a barrier layer formed at an interface between an element and an internal electrode.
ｓｅｃ以下で電流密度２０Ａ／ｃｍ＾２以上であり、
１回ないし複数回印加することを特徴とする特許請求の
範囲第２項に記載の正の抵抗温度特性を有する半導体磁
器の製造方法。(3) The pulse width applied between the internal electrodes is 1/m.
sec or less and a current density of 20 A/cm^2 or more,
3. The method for manufacturing semiconductor ceramics having positive resistance-temperature characteristics according to claim 2, wherein the application is performed once or multiple times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13766284A JPS6115302A (en) | 1984-07-02 | 1984-07-02 | Semiconductor porcelain having positive temperature coefficient characteristic and method of producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13766284A JPS6115302A (en) | 1984-07-02 | 1984-07-02 | Semiconductor porcelain having positive temperature coefficient characteristic and method of producing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6115302A true JPS6115302A (en) | 1986-01-23 |
Family
ID=15203883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13766284A Pending JPS6115302A (en) | 1984-07-02 | 1984-07-02 | Semiconductor porcelain having positive temperature coefficient characteristic and method of producing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6115302A (en) |
-
1984
- 1984-07-02 JP JP13766284A patent/JPS6115302A/en active Pending
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