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JPS61151366U - - Google Patents

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Publication number
JPS61151366U
JPS61151366U JP3516085U JP3516085U JPS61151366U JP S61151366 U JPS61151366 U JP S61151366U JP 3516085 U JP3516085 U JP 3516085U JP 3516085 U JP3516085 U JP 3516085U JP S61151366 U JPS61151366 U JP S61151366U
Authority
JP
Japan
Prior art keywords
light
servo
semiconductor laser
receiving element
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3516085U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3516085U priority Critical patent/JPS61151366U/ja
Publication of JPS61151366U publication Critical patent/JPS61151366U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案半導体レーザ装置の実施の一例
を示す断面図、第2図は別の実施例を示す断面図
である。 符号の説明、1……半導体基板、5……レーザ
出力モニター用受光素子、8……サーボ等用受光
素子、12……半導体レーザ素子、14……ビー
ムスプリツタ。
FIG. 1 is a sectional view showing one embodiment of the semiconductor laser device of the present invention, and FIG. 2 is a sectional view showing another embodiment. Explanation of symbols: 1... Semiconductor substrate, 5... Light receiving element for laser output monitor, 8... Light receiving element for servo etc., 12... Semiconductor laser element, 14... Beam splitter.

Claims (1)

【実用新案登録請求の範囲】 半導体基板表面の前部領域にサーボ系等を構成
するサーボ等用受光素子が形成され、 中間領域上に半導体レーザ素子が固着され、 後部領域にレーザ出力モニター用受光素子が形
成され、 上記前部領域に形成されたサーボ等用受光素子
上に半導体レーザ素子から前方へ向うレーザ光の
透過を許容し半導体レーザ素子へ向う前方からの
レーザ光を上記サーボ等用受光素子側へ反射する
ビームスプリツタが固着されてなる ことを特徴とする半導体レーザ装置。
[Scope of Claim for Utility Model Registration] A light-receiving element for a servo, etc. that constitutes a servo system is formed in the front region of the surface of a semiconductor substrate, a semiconductor laser element is fixed on the middle region, and a light-receiving element for monitoring laser output is formed in the rear region. A device is formed on the light-receiving element for the servo, etc. formed in the front region to allow laser light directed forward from the semiconductor laser device to pass therethrough, and to receive the laser light from the front toward the semiconductor laser device for the servo, etc. A semiconductor laser device characterized in that a beam splitter is fixed to reflect the beam toward the element side.
JP3516085U 1985-03-12 1985-03-12 Pending JPS61151366U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3516085U JPS61151366U (en) 1985-03-12 1985-03-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3516085U JPS61151366U (en) 1985-03-12 1985-03-12

Publications (1)

Publication Number Publication Date
JPS61151366U true JPS61151366U (en) 1986-09-18

Family

ID=30539186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3516085U Pending JPS61151366U (en) 1985-03-12 1985-03-12

Country Status (1)

Country Link
JP (1) JPS61151366U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198136A (en) * 1987-10-09 1989-04-17 Mitsubishi Electric Corp Hybrid optical element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145387A (en) * 1979-04-30 1980-11-12 Xerox Corp Hybrid semiconductor laser*detector
JPS5693388A (en) * 1979-12-26 1981-07-28 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5996789A (en) * 1982-11-25 1984-06-04 Nec Corp Photosemiconductor device
JPS59193548A (en) * 1983-04-15 1984-11-02 Hitachi Ltd Automatic focus control device for optical information reproducing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145387A (en) * 1979-04-30 1980-11-12 Xerox Corp Hybrid semiconductor laser*detector
JPS5693388A (en) * 1979-12-26 1981-07-28 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5996789A (en) * 1982-11-25 1984-06-04 Nec Corp Photosemiconductor device
JPS59193548A (en) * 1983-04-15 1984-11-02 Hitachi Ltd Automatic focus control device for optical information reproducing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198136A (en) * 1987-10-09 1989-04-17 Mitsubishi Electric Corp Hybrid optical element

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