JPS61150415A - Push-pull output integrated circuit - Google Patents
Push-pull output integrated circuitInfo
- Publication number
- JPS61150415A JPS61150415A JP59272415A JP27241584A JPS61150415A JP S61150415 A JPS61150415 A JP S61150415A JP 59272415 A JP59272415 A JP 59272415A JP 27241584 A JP27241584 A JP 27241584A JP S61150415 A JPS61150415 A JP S61150415A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- whose
- voltage
- turned
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はプツシニブル出力集積回路に関し、特に低圧ロ
ジック部に接続されるプツシニブル出力集積回路に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a pushable output integrated circuit, and more particularly to a pushable output integrated circuit connected to a low voltage logic section.
(従来の技術)
従来、高圧プッシュプル出力回路は、その出力部にNチ
ャンネルMOSトランジスタを2個使用した形式のもの
が多く使われている。これはNチャンネルMOS)9ン
ジスタの方がPチャンネルMO8トランジスタよりも動
作速度、電流容量ともに有利であること、高圧のP、N
の両チャンネルのMOS)ツンジスタを同一半導体基板
に集積することが困難なことによっている。(Prior Art) Conventionally, many high-voltage push-pull output circuits have been used in which two N-channel MOS transistors are used in the output section. This is because the N-channel MOS)9 transistor has advantages over the P-channel MO8 transistor in terms of operating speed and current capacity, and the high-voltage P,N
This is because it is difficult to integrate both channel MOS transistors on the same semiconductor substrate.
第2図は従来のプツシニブル出力回路の一例の回路図で
ある。FIG. 2 is a circuit diagram of an example of a conventional push-nable output circuit.
信号入力端子1から信号が入力して高圧のNチャンネル
MOSトランジスタT!がオンすると、NチャンネルM
OS)う/ジスタT2はインバータINVによりオフす
る。MOSトランジスタTtのオンにより高圧側電源V
DDより抵抗R工、R2を通じて電流が流れ、抵抗R1
の電圧降下によ6pNPトランジスタT4のベース、エ
ミッタがバイアスされ、トランジスタT4がオンし、ト
ランジスタT4のコレクタ電圧、すなわちNチャンネル
MO8)、yンジスタT3のゲート電位がほぼ電源電圧
VDDと同じになる。このとき、トランジスタT3のゲ
ート・ソース間のツェナーダイオードDのツェナー電圧
までのゲート電圧がトランジスタT3のゲートとソース
との間に加わり、ゲート電圧として働き、トランジスタ
T3がオンし、負荷に電流を供給する。A signal is input from signal input terminal 1 and the high voltage N-channel MOS transistor T! When turned on, N channel M
OS) Register T2 is turned off by inverter INV. By turning on the MOS transistor Tt, the high voltage side power supply V
Current flows from DD through resistor R and R2, and resistor R1
Due to the voltage drop, the base and emitter of the 6pNP transistor T4 are biased, the transistor T4 is turned on, and the collector voltage of the transistor T4, that is, the N-channel MO8) and the gate potential of the yin resistor T3 become almost the same as the power supply voltage VDD. At this time, the gate voltage up to the Zener voltage of the Zener diode D between the gate and source of the transistor T3 is applied between the gate and source of the transistor T3, acts as a gate voltage, turns on the transistor T3, and supplies current to the load. do.
入力信号の極性が逆になると、トランジスタT1がオフ
、トランジスタT雪がオンとなり、ツェナーダイオード
DからトランジスタT2を通る経路で負荷から電流を引
出す。When the polarity of the input signal is reversed, transistor T1 is turned off and transistor T is turned on, drawing current from the load via a path from Zener diode D through transistor T2.
(発明が解決しようとする問題点)
このような回路においては、抵抗R1,R2、)は集積
回路で形成する場合、面積の制約があるので10にΩ程
度しか得られない。消費電力は、扱う電圧の2乗で増大
するから、高圧になると、第2図の回路では電力消費が
大き過ぎて使用できないという問題を生ずる。(Problems to be Solved by the Invention) In such a circuit, if the resistors R1, R2, etc. are formed using an integrated circuit, they can only have a resistance of about 10Ω due to area constraints. Since power consumption increases as the square of the voltage being handled, when the voltage becomes high, the problem arises that the circuit of FIG. 2 consumes too much power and cannot be used.
本発明の目的は、上記問題点を解決し、無駄な電力の消
費をなくした低電力消費プツシ−プル出力集積回路を提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a low power consumption push-pull output integrated circuit that eliminates unnecessary power consumption.
(問題点を解決するための手段)
本発明のプツシニブル出力集積回路は、信号入力端子に
一端が接続するコンデンサと、ベースが前記コンデンサ
の他端に接続しエミッタが高圧側電源に接続するPNP
トランジスタと、ゲートが前記信号入力端子に接続し
ソースが低圧側電源に接続しドレインが前記PNPトラ
ンジスタのコレクタに接続するNチャンネルの第1M0
8);yンジスタと、ゲートが前記PNPトランジスタ
のコレクタに接続しソースが出力端に接続しドレインが
前記高圧側電源に接続するNチャンネルの第2MOSト
ランジスタと、カソードが前記PNP トランジスタの
コレクタに接続しアノードが前記出力端及び第2MOS
トランジスタのソースに接続するツェナーダイオードと
を含んで構成される。(Means for Solving the Problems) The pushinable output integrated circuit of the present invention includes a capacitor whose one end is connected to a signal input terminal, and a PNP whose base is connected to the other end of the capacitor and whose emitter is connected to a high-voltage power supply.
a transistor, and an N-channel first M0 whose gate is connected to the signal input terminal, whose source is connected to the low-voltage power supply, and whose drain is connected to the collector of the PNP transistor.
8); a second N-channel MOS transistor whose gate is connected to the collector of the PNP transistor, whose source is connected to the output terminal, and whose drain is connected to the high-voltage power supply; and whose cathode is connected to the collector of the PNP transistor. The anode is connected to the output terminal and the second MOS
The transistor includes a Zener diode connected to the source of the transistor.
(実施例) 次に、本発明の実施例について図面を用いて説明する。(Example) Next, embodiments of the present invention will be described using the drawings.
第1図は本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.
この実施例は、信号入力端子1に一端が接続するコンデ
ンサCと、ベースがコンデンサCの他端に接続しエミッ
タが高圧側電源VDD K接続するPNPトランジスタ
T4と、ゲートが信号入力端子1に接続しソースが低圧
側電源GNDに接続しドレインがPNP トランジスタ
T4のコレクタに接続するNチャンネルの第1MOSト
ランジスタT2と、ゲートがP]’IP トランジスタ
T4のコレクタに接続しソースが出力端2に接続しドレ
インが高圧側電源VDDに接続するNチャンネルの第2
M0SトランジスタT3と、カソードがPNP トラン
ジスタT4のコレクタに接続しアノードが出力端2及び
第2M0SトランジスタT3のソースに接続するツェナ
ーダイオードDとを含んで構成される。This embodiment includes a capacitor C whose one end is connected to the signal input terminal 1, a PNP transistor T4 whose base is connected to the other end of the capacitor C and whose emitter is connected to the high voltage side power supply VDD K, and whose gate is connected to the signal input terminal 1. A first N-channel MOS transistor T2 has a source connected to the low voltage side power supply GND and a drain connected to the collector of the PNP transistor T4, and a gate connected to the collector of the P]'IP transistor T4 and a source connected to the output terminal 2. The second N-channel whose drain is connected to the high voltage side power supply VDD
It is configured to include an MOS transistor T3 and a Zener diode D whose cathode is connected to the collector of the PNP transistor T4 and whose anode is connected to the output terminal 2 and the source of the second MOS transistor T3.
次に、この実施例の動作について説明する。信号入力端
子1に図示するような矩形波の信号が入力するものとす
る。この信号が′1”から′0″へと変化すると、この
変化がコンデンサCで微分され、図示するような信号V
cとなり、この信号Vc がPNP)をンジスタT4の
ベースに印加することになる。第1図では、信号Vcの
電圧の方向はVDDとGNDの方向と一致させであるた
め、トランジスタで4のベースはオフ状態から深くバイ
アスがかかるように電圧が印加されたことになる。これ
でPNPトランジスタT4がオンし、トランジスタT3
のゲート容量を充電し、トランジスタT3がオンする。Next, the operation of this embodiment will be explained. It is assumed that a rectangular wave signal as shown in the figure is input to the signal input terminal 1. When this signal changes from '1' to '0', this change is differentiated by capacitor C, resulting in a signal V as shown in the figure.
This signal Vc (PNP) is applied to the base of the transistor T4. In FIG. 1, since the direction of the voltage of the signal Vc is made to match the direction of VDD and GND, a voltage is applied so that the base of transistor 4 is deeply biased from the off state. This turns on PNP transistor T4, and transistor T3
The transistor T3 is turned on.
この微分波形が消え、PNPトランジスタT4がオフし
てもトランジスタT3のゲート容量は充電状態が持続す
るため、オン状態を続ける。Even if this differential waveform disappears and the PNP transistor T4 is turned off, the gate capacitance of the transistor T3 remains charged, so it continues to be on.
次の入力電圧の変化、すなわち入力信号が′0”から1
”へ変化すると、今度はトランジスタT2がオンとなり
、トランジスタT3のゲート容量がT2のドレイン電流
として引出され、トランジスタT3はオフする。すなわ
ち、入力信号の変化にに応じてトランジスタT3.Tz
がオン・オフすることになる。The next input voltage change, that is, the input signal changes from '0' to 1
”, the transistor T2 turns on, the gate capacitance of the transistor T3 is drawn out as the drain current of T2, and the transistor T3 turns off. That is, depending on the change in the input signal, the transistor T3.Tz
will turn on and off.
このとき流れる電流は、コンデンサCの電圧が論理″1
”と0”のレベルだけ変化した時の充放電電流であるか
ら極めて小さく、#1とんど電力消費を伴わない。この
ようなコンデンサCの容量は、0.1〜IPFで良いこ
とが実験により判明しており、集積回路中に作り込める
値である。The current flowing at this time is such that the voltage of capacitor C is logic "1"
The charging/discharging current when the level changes between "0" and "0" is extremely small, and #1 almost no power consumption is involved. It has been found through experiments that the capacitance of such a capacitor C may be 0.1 to IPF, which is a value that can be incorporated into an integrated circuit.
(発明の効果)
以上説明したように、本発明によれば、無駄な電力消費
をなくシ、消費電力を低減し、しかも集積回路に作り込
めることのできるプツシ−プル出力集積回路が得られる
。(Effects of the Invention) As described above, according to the present invention, it is possible to obtain a push-pull output integrated circuit that eliminates wasteful power consumption, reduces power consumption, and can be incorporated into an integrated circuit.
第1図は本発明の一実施例の回路図、第2図は従来のプ
ッシュプル出力回路の一例の回路図である。
1・・・・・・信号入力端子、2・・・・・・出力端、
C・・・・・・コンデンサ、D・・・・・・ツェナーダ
イオード、GND・・。
・・・低圧側電源、Rt、Rz・・・・・・抵抗、T1
〜T3・・・・・・NチャンネルMO8トランジスタ、
T4・−・・・・PNPトランジスタ、■DD・・・・
・・高圧側電源。FIG. 1 is a circuit diagram of an embodiment of the present invention, and FIG. 2 is a circuit diagram of an example of a conventional push-pull output circuit. 1...Signal input terminal, 2...Output terminal,
C... Capacitor, D... Zener diode, GND... ...Low voltage side power supply, Rt, Rz...Resistance, T1
~T3...N-channel MO8 transistor,
T4...PNP transistor, ■DD...
...High voltage side power supply.
Claims (1)
記コンデンサの他端に接続しエミッタが高圧側電源に接
続するPNPトランジスタと、ゲートが前記信号入力端
子に接続しソースが低圧側電源に接続しドレインが前記
PNPトランジスタのコレクタに接続するNチャンネル
の第1MOSトランジスタと、ゲートが前記PNPトラ
ンジスタのコレクタに接続しソースが出力端に接続しド
レインが前記高圧側電源に接続するNチャンネルの第2
MOSトランジスタと、カソードが前記PNPトランジ
スタのコレクタに接続しアノードが前記出力端及び第2
MOSトランジスタのソースに接続するツェナーダイオ
ードとを含むことを特徴とするプッシュプル出力集積回
路。A capacitor whose one end is connected to the signal input terminal, a PNP transistor whose base is connected to the other end of the capacitor and whose emitter is connected to the high-voltage power supply, and a PNP transistor whose gate is connected to the signal input terminal, whose source is connected to the low-voltage power supply, and whose drain is connected to the low-voltage power supply. a first N-channel MOS transistor whose gate is connected to the collector of the PNP transistor, a second N-channel MOS transistor whose gate is connected to the collector of the PNP transistor, whose source is connected to the output terminal, and whose drain is connected to the high-voltage power supply.
a MOS transistor, a cathode connected to the collector of the PNP transistor and an anode connected to the output terminal and the second
A push-pull output integrated circuit comprising: a Zener diode connected to a source of a MOS transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59272415A JPS61150415A (en) | 1984-12-24 | 1984-12-24 | Push-pull output integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59272415A JPS61150415A (en) | 1984-12-24 | 1984-12-24 | Push-pull output integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61150415A true JPS61150415A (en) | 1986-07-09 |
Family
ID=17513587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59272415A Pending JPS61150415A (en) | 1984-12-24 | 1984-12-24 | Push-pull output integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61150415A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH025610A (en) * | 1988-06-24 | 1990-01-10 | Toshiba Corp | Output circuit |
JP2004129101A (en) * | 2002-10-07 | 2004-04-22 | Fuji Electric Device Technology Co Ltd | Semiconductor integrated circuit device |
WO2024128058A1 (en) * | 2022-12-13 | 2024-06-20 | 株式会社Gsユアサ | Power storage device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5437450A (en) * | 1977-08-29 | 1979-03-19 | Hitachi Ltd | Source-follower type mos amplifier circuit |
JPS5711536A (en) * | 1980-06-24 | 1982-01-21 | Nec Corp | High-voltage mos inverter and its driving method |
JPS5888931A (en) * | 1981-11-20 | 1983-05-27 | Matsushita Electric Works Ltd | Switching circuit |
-
1984
- 1984-12-24 JP JP59272415A patent/JPS61150415A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5437450A (en) * | 1977-08-29 | 1979-03-19 | Hitachi Ltd | Source-follower type mos amplifier circuit |
JPS5711536A (en) * | 1980-06-24 | 1982-01-21 | Nec Corp | High-voltage mos inverter and its driving method |
JPS5888931A (en) * | 1981-11-20 | 1983-05-27 | Matsushita Electric Works Ltd | Switching circuit |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH025610A (en) * | 1988-06-24 | 1990-01-10 | Toshiba Corp | Output circuit |
JP2004129101A (en) * | 2002-10-07 | 2004-04-22 | Fuji Electric Device Technology Co Ltd | Semiconductor integrated circuit device |
WO2024128058A1 (en) * | 2022-12-13 | 2024-06-20 | 株式会社Gsユアサ | Power storage device |
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