JPS61141116U - - Google Patents
Info
- Publication number
- JPS61141116U JPS61141116U JP2535285U JP2535285U JPS61141116U JP S61141116 U JPS61141116 U JP S61141116U JP 2535285 U JP2535285 U JP 2535285U JP 2535285 U JP2535285 U JP 2535285U JP S61141116 U JPS61141116 U JP S61141116U
- Authority
- JP
- Japan
- Prior art keywords
- steam
- generation means
- steam generation
- automobile
- hot air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Air Humidification (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2535285U JPS61141116U (fr) | 1985-02-22 | 1985-02-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2535285U JPS61141116U (fr) | 1985-02-22 | 1985-02-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61141116U true JPS61141116U (fr) | 1986-09-01 |
Family
ID=30520349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2535285U Pending JPS61141116U (fr) | 1985-02-22 | 1985-02-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61141116U (fr) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6881632B2 (en) | 2000-12-04 | 2005-04-19 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS |
| US6921914B2 (en) | 2000-08-16 | 2005-07-26 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
| US6940089B2 (en) | 2001-04-04 | 2005-09-06 | Massachusetts Institute Of Technology | Semiconductor device structure |
| US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US7060632B2 (en) | 2002-03-14 | 2006-06-13 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
| US7074623B2 (en) | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| US7081410B2 (en) | 1997-06-24 | 2006-07-25 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
| US7122449B2 (en) | 2002-06-10 | 2006-10-17 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
| US7217603B2 (en) | 2002-06-25 | 2007-05-15 | Amberwave Systems Corporation | Methods of forming reacted conductive gate electrodes |
| US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
| US7256142B2 (en) | 2001-03-02 | 2007-08-14 | Amberwave Systems Corporation | Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits |
| US7307273B2 (en) | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
| US7332417B2 (en) | 2003-01-27 | 2008-02-19 | Amberwave Systems Corporation | Semiconductor structures with structural homogeneity |
| US7335545B2 (en) | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| US7504704B2 (en) | 2003-03-07 | 2009-03-17 | Amberwave Systems Corporation | Shallow trench isolation process |
| US7615829B2 (en) | 2002-06-07 | 2009-11-10 | Amberwave Systems Corporation | Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636507B2 (fr) * | 1978-05-29 | 1981-08-25 |
-
1985
- 1985-02-22 JP JP2535285U patent/JPS61141116U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636507B2 (fr) * | 1978-05-29 | 1981-08-25 |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7081410B2 (en) | 1997-06-24 | 2006-07-25 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
| US7250359B2 (en) | 1997-06-24 | 2007-07-31 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
| US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
| US6921914B2 (en) | 2000-08-16 | 2005-07-26 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
| US6881632B2 (en) | 2000-12-04 | 2005-04-19 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS |
| US7256142B2 (en) | 2001-03-02 | 2007-08-14 | Amberwave Systems Corporation | Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits |
| US7501351B2 (en) | 2001-03-02 | 2009-03-10 | Amberwave Systems Corporation | Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits |
| US7348259B2 (en) | 2001-04-04 | 2008-03-25 | Massachusetts Institute Of Technology | Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers |
| US6940089B2 (en) | 2001-04-04 | 2005-09-06 | Massachusetts Institute Of Technology | Semiconductor device structure |
| US7060632B2 (en) | 2002-03-14 | 2006-06-13 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
| US7420201B2 (en) | 2002-06-07 | 2008-09-02 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures with elevated source/drain regions |
| US7109516B2 (en) | 2002-06-07 | 2006-09-19 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator finFET device structures |
| US7615829B2 (en) | 2002-06-07 | 2009-11-10 | Amberwave Systems Corporation | Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
| US7259388B2 (en) | 2002-06-07 | 2007-08-21 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US7297612B2 (en) | 2002-06-07 | 2007-11-20 | Amberwave Systems Corporation | Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes |
| US7307273B2 (en) | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
| US7588994B2 (en) | 2002-06-07 | 2009-09-15 | Amberwave Systems Corporation | Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain |
| US7335545B2 (en) | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
| US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US7074623B2 (en) | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
| US7414259B2 (en) | 2002-06-07 | 2008-08-19 | Amberwave Systems Corporation | Strained germanium-on-insulator device structures |
| US7439164B2 (en) | 2002-06-10 | 2008-10-21 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
| US7122449B2 (en) | 2002-06-10 | 2006-10-17 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
| US7217603B2 (en) | 2002-06-25 | 2007-05-15 | Amberwave Systems Corporation | Methods of forming reacted conductive gate electrodes |
| US7332417B2 (en) | 2003-01-27 | 2008-02-19 | Amberwave Systems Corporation | Semiconductor structures with structural homogeneity |
| US7504704B2 (en) | 2003-03-07 | 2009-03-17 | Amberwave Systems Corporation | Shallow trench isolation process |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |