JPS61136234A - Rotary continuous vapor-phase vacuum processing device - Google Patents
Rotary continuous vapor-phase vacuum processing deviceInfo
- Publication number
- JPS61136234A JPS61136234A JP25765284A JP25765284A JPS61136234A JP S61136234 A JPS61136234 A JP S61136234A JP 25765284 A JP25765284 A JP 25765284A JP 25765284 A JP25765284 A JP 25765284A JP S61136234 A JPS61136234 A JP S61136234A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- equipment
- top plate
- tank
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
不発明は、真空槽から取り出すことなく・異なった気相
処理を連続して行なうことのできる真空!ロセス装置に
関するものである0
この種の真空プロセスとしてはプラズマ重合装置(イオ
ンエツチングやイオンfv−ティング)やプラズマ重合
、X線−電子d ’Iソゲラフイー等があ1)、LSI
、超LSI半導体製造等に広く用いられている◎
従来このような異なった処理にはそれぞれ別個の装置が
用いられており、従って被処理物(例えば基板)は処理
工程毎に真空処理槽から出し入れするのが普通であった
・そのため被処理物真空処理槽に入れた後真空ポンプで
所要のレベルに、排気し、予定の処[を行なった後再び
槽内全大気に開いて被処理物を取り出し次の処理へ移す
必要があり、操作に時間がかかるだけでなく、比較的大
型の装置では排気系の負荷大きくなるという欠点がある
。このような点を考慮して一つの真空処理槽内で種々の
異なる処理を実施できるようにした真空グミセス装置も
提案されているOその一例として集積回路の製作に用い
られる製版装置が特公昭56−53206号公報に開示
されている。この製版装置は排気制御できる一つの真空
容器内に蒸着装置と放射線照射装置と現像・定着装置と
を直線状に並+dt して設けこれらの各処理装置に対
して処理すべき基板金順に移送して所要の処理上行なう
ように構成されている・
ところで、上述のようないわゆるインライン式の装置で
は一つの真空容器内で種々の処理全行なうようにしてい
るために一度真空容器?真空に引けば所要の処理工程が
終了するまで大気に開けずに運転できるが2一つの真空
容器内に種々の処理装Ct直線状に配列しているため装
置自体がかさばり、また各処理装置本体を真空容器内に
内蔵しているため搬送機構が複雑となるから真空容器の
容積が大きくなり、排気系の負荷が大きくなる・そこで
本発明の目的は、このLつな従来の方式の問題点を解消
ししかも真空槽外へ被処理物を取り出すことなく異なっ
た気相処理を連続して行なうことのできる回転式連続気
相真空グミセス装置を提供することにある@
問題点を解決する友めの手段
上記目的を達成するために1本発明による回転式連続気
相真空プロセス装置は、平面状の天板と組合さって外側
真空槽を形成する外槽と、上記天板に実質的に垂直な軸
に平行な方向に移動できかつ上記軸の1わりを回転でき
、上記軸のまわりの複数個の異なる位置において上記天
板に密着して複数個の異なる気相状態の内側真空槽を形
成する内−と;上記異なる各位置に対応して上記天板に
設けられた異なる処理!Itとを有し、上記内債内に挿
置され九被処理*Jを真空槽から取り出さずに連続して
上記異なる各位置で異なる処理を行なうよ5 WC(、
之ことを特徴としている。[Detailed Description of the Invention] The inventive feature is a vacuum that allows different gas phase treatments to be performed continuously without taking the vacuum chamber out! This type of vacuum process includes plasma polymerization equipment (ion etching and ion fv-ting), plasma polymerization,
, widely used in VLSI semiconductor manufacturing, etc. ◎ Traditionally, separate equipment has been used for each of these different processes, so the objects to be processed (e.g., substrates) have to be taken in and out of the vacuum processing tank for each processing step. Therefore, after putting the material to be processed into the vacuum treatment tank, it is evacuated to the required level with a vacuum pump, and after the scheduled treatment, the tank is opened to the entire atmosphere again and the material to be processed is removed. It is necessary to take it out and move it to the next process, which not only takes time, but also has the drawback of increasing the load on the exhaust system in relatively large equipment. Taking these points into consideration, a vacuum gummy processing device that can carry out various different processes in one vacuum processing tank has also been proposed.One example is a plate-making device used in the production of integrated circuits, which was introduced in 1986. It is disclosed in Japanese Patent No.-53206. This plate-making apparatus has an evaporation device, a radiation irradiation device, and a development/fixing device arranged in a straight line in one vacuum chamber that can be controlled for exhaust, and transfers the substrates to each processing device in the order of processing. By the way, in the so-called in-line type equipment as mentioned above, all of the various processes are performed within one vacuum vessel, so it is difficult to remove the vacuum vessel once. If it is evacuated, it can be operated without being exposed to the atmosphere until the required processing steps are completed, but since the various processing equipment Ct are arranged in a straight line in a single vacuum container, the equipment itself becomes bulky, and each processing equipment main body is built into the vacuum container, which complicates the transport mechanism, increases the volume of the vacuum container, and increases the load on the exhaust system. Therefore, the purpose of the present invention is to solve the problems of the conventional method. Our objective is to provide a rotary continuous gas phase vacuum gummy processing device that solves the problem and can perform different gas phase treatments continuously without taking out the processed material out of the vacuum chamber. In order to achieve the above objects, the rotary continuous gas phase vacuum processing apparatus according to the present invention includes an outer tank that is combined with a planar top plate to form an outer vacuum tank, and an outer tank that is substantially perpendicular to the top plate. can move in a direction parallel to the axis and rotate about one axis, and is in close contact with the top plate at a plurality of different positions around the axis to form a plurality of inner vacuum chambers in different gas phase states. Inside and; different treatments provided on the top plate corresponding to each of the different positions above! It has a 5 WC (,
It is characterized by this.
本発明による装置においては、上記の処理装置として例
えばプラズマエツチング装置、プラズマCvD装置、プ
ラズマ重合裟d、クラフト重合装置、加熱装置・放射線
照射装置1粒子線照射装置および被処理物搬入、搬出装
置等が用いられ得るが、当然処理目的に応じCf1f−
意の他の処理装置を設けることもできる。In the apparatus according to the present invention, the above-mentioned processing apparatus includes, for example, a plasma etching apparatus, a plasma CVD apparatus, a plasma polymerization apparatus, a craft polymerization apparatus, a heating apparatus/radiation irradiation apparatus, a particle beam irradiation apparatus, and a processing object loading/unloading apparatus, etc. Cf1f- may be used, but depending on the processing purpose, Cf1f-
Other processing devices may also be provided.
作 用
このように構成した本発明による装置においては各処理
装置を天板に組合させているので真空槽を小容積にでき
、しかも外側真空槽と内側真空槽との二重構造により、
外側真空槽を予定の真空度度に保持したtま内槽を回転
させ所望の処理位置で内側真空槽内を処理に適し九真空
レベルに容易に調′節することができる6ゲ一トバルプ
等ヲ用いずに次の作業部位に容易に作業物を搬送するこ
とができる・すなわち一つの処理位置から次の処理位置
へ回動する際にtよ内槽内は外槽内の真空レベルに下が
るだけであって、処理に先立って内側真空槽内を所要の
レベルまで排気するだけでよい。Function: In the apparatus according to the present invention configured as described above, each processing device is combined with the top plate, so the volume of the vacuum chamber can be made small.Moreover, due to the double structure of the outer vacuum chamber and the inner vacuum chamber,
A 6-gauge valve, etc. that can easily adjust the inside of the inner vacuum chamber to nine vacuum levels suitable for processing by rotating the inner chamber until the outer vacuum chamber is maintained at a predetermined degree of vacuum and at the desired processing position. The workpiece can be easily transported to the next work area without using the vacuum. In other words, when rotating from one processing position to the next, the inside of the inner tank is lowered to the vacuum level of the outer tank. It is only necessary to evacuate the inside of the inner vacuum chamber to the required level prior to processing.
また本発明による装置は種々の真空プロセス装置にL用
できるが1例えば電子ビーム真空製版用装置に用いる場
合には天板くは少なくともレジスト塗布用プラズマ重合
装置と電子ビーム描画装置とレジスト現像用加熱装置と
が設けられ得る@またX線真空製版用装置として実施す
る場合には少なくともレジスト塗布用グラズマ重@−4
&置とX11!図形焼付装置と気相レジスト現像装置と
が設けられ得る。Furthermore, the apparatus according to the present invention can be used in various vacuum process apparatuses. For example, when used in an electron beam vacuum plate making apparatus, a top plate or at least a plasma polymerization apparatus for resist coating, an electron beam drawing apparatus, and a heating apparatus for resist development are required. Also, when implemented as an X-ray vacuum plate making device, at least a resist coating glazma heavy @-4
&OkitoX11! A graphic printing device and a vapor phase resist development device may be provided.
以下、添附図面を参照して本発明の一実施例について説
明する0
図示実施例は回転式電子ビーム真空製版連続気相処理装
att−示し、1は台枠で、この台枠1上に円筒状の外
槽2が設置されており、外槽2は天板3によって密封的
に閉じられている@外槽2内は導管4を介して図示して
ない排気系(例えばメカニカルグースターボング)に連
結され、所要のレベルまで排気され、外側真空槽を形成
する0円筒状の外槽2内でこの外槽2と同心に円筒状の
内債5が回転駆動軸6上に支持されているO回転駆動軸
6は図示したように外+m2t−通って台枠1に取付け
たm*モモ−7によって回転され、内45f:回転させ
るようにされている。円筒状の内槽5はリフトシリンダ
8によって軸方間に動かされ、それにエリ内槽5の上方
周縁部5aは天板3に密封圧接さル、内111IJIc
空槽を形成し得るO内槽5内は導管9を介して図示して
ない排気系(例えば拡散ボンf)に連結される・
内槽5内は図示実施例では第2図に示すように凹室ム、
B、C,Dに分けられており、各室内は処理すべき基板
(第2図に仮想線円で示す)t−受けかつ位置決めする
ための割出しテーブル10が配置されており、そして6
割出しテーブル10は処理すべき基板の保持部材11を
備えており・これにより基板は回動可能に保持される。Hereinafter, one embodiment of the present invention will be described with reference to the attached drawings. The illustrated embodiment shows a rotary electron beam vacuum plate making continuous gas phase processing apparatus att. A shaped outer tank 2 is installed, and the outer tank 2 is hermetically closed by a top plate 3. The inside of the outer tank 2 is connected to an exhaust system (not shown) via a conduit 4 (for example, a mechanical Gooster bong). In a cylindrical outer tank 2 which is connected to and evacuated to a required level and forms an outer vacuum tank, a cylindrical inner cylinder 5 is supported on a rotary drive shaft 6 concentrically with the outer tank 2. As shown in the figure, the O-rotation drive shaft 6 is rotated by an m*momo-7 attached to the underframe 1 through the outside +m2t-, and the inside 45f: is rotated. The cylindrical inner tank 5 is moved axially by a lift cylinder 8, and the upper peripheral edge 5a of the inner tank 5 is sealed and pressed against the top plate 3.
The inside of the O inner tank 5, which can form an empty tank, is connected to an exhaust system (not shown) (for example, a diffusion bomb f) via a conduit 9.In the illustrated embodiment, the inside of the inner tank 5 is as shown in FIG. concave chamber,
It is divided into rooms B, C, and D, and each room is equipped with an indexing table 10 for receiving and positioning the substrates to be processed (shown by imaginary circles in FIG. 2).
The indexing table 10 is equipped with a holding member 11 for holding the substrate to be processed, whereby the substrate is held rotatably.
また各室にLIi第2図に示すようにパルプ穴12が設
けら几てこ1らの各パルプ穴12は外槽2に取付けら几
たパルプ(第1図に一つだけ示す)16と共動するよう
にされている@
第2図において家人の位置は処理すべき基板の挿入、搬
出位置であり、室Bの位(tはグラズマ重会位置であり
、室Cの位置ri電子ビーム照射位置?あり、室0の位
置は反応性イオンエツチング位置である。こ几らの各処
理に必要な装置itd天板3上にffi+#さ1ており
、第1図にはそのうちのグラズマ発生用の放電管14と
゛−子ビーム照射装置15とだけを略示する。In addition, each chamber is provided with a pulp hole 12 as shown in FIG. In Figure 2, the position of the family member is the insertion and removal position of the substrate to be processed, the position of chamber B (t is the glazma superimposition position, and the position of chamber C is the position of electron beam irradiation). The position of chamber 0 is the reactive ion etching position.The equipment required for each of these processes is located on the itd top plate 3, and Figure 1 shows the one for glazma generation. Only the discharge tube 14 and the electron beam irradiation device 15 are schematically shown.
このように構成した図示装置の動作において。In the operation of the illustrated apparatus configured in this manner.
まず第2図に示す室ムの位置において図示してない搬入
、W1出装#Lを用いて各室A〜Dに順次処理すべき基
板を搬入する0その後外槽2内を排気し。First, at the position of the chamber shown in FIG. 2, the substrates to be processed are sequentially carried into each chamber A to D using loading/unloading #L (not shown). After that, the inside of the outer tank 2 is evacuated.
そして内45内を処理に適した真空度に排気する@こう
して準備した後、順次各処理位置へ内m5t−90°の
角度づつ回動させて最初にグラズマ重合処理、第2に電
子ビーム照射処理、そして最後に反応性イオンエツチン
グ処jIt一連譚して行なう・こうして各室内の基板t
−順次処理して内槽5内の全ての基板の処理が終了した
後再びwL2図の家人の位置で鍜人、搬出装置によって
各室内の処理済みの基板は搬出される◎この一連の動作
において外槽2内の真空は維持され、内債5内をパルプ
穴12を介して内槽2内に連通させるだけで内[S全各
処J3I!位置へ回動するので各処理に先立っての内4
5内の排気が容易となるaまた各基板は外部へ取出さず
に一連の処理工程を実施できるので処理すべき基板は塵
埃による汚染の危険や温度・湿度等の変化の影it−実
質的に避けることができる。Then, the inside of the inner 45 is evacuated to a degree of vacuum suitable for the processing.@After preparing in this way, the inside is sequentially rotated by an angle of 90 degrees (m5t) to each processing position, first for the glazma polymerization treatment, and second for the electron beam irradiation treatment. , and finally, perform a series of reactive ion etching processes.In this way, the substrates in each chamber are
- After sequentially processing all the substrates in the inner tank 5, the operator returns to the position of the householder in Figure wL2, and the processed substrates in each chamber are carried out by the carrying out device.◎In this series of operations The vacuum inside the outer tank 2 is maintained, and the inside of the inner tank 5 is simply communicated with the inner tank 2 through the pulp hole 12. Because it rotates to the position, 4 of the
Also, since a series of processing steps can be carried out without taking each substrate out to the outside, the substrates to be processed are free from the risk of contamination by dust and changes in temperature, humidity, etc. can be avoided.
なお処理の種類によって内1115内へ必要なブスを供
給する装置や被処理基板の加熱、冷却装置を組み込むこ
ともできる。Note that depending on the type of processing, a device for supplying necessary busses into the interior 1115 and a device for heating and cooling the substrate to be processed may be incorporated.
また処理工程の数に応じて内槽5は四つ以上−または以
下の壬意の数にまたは二重、三重円周状に仕切ることが
でき、そして基板の角度割出しは組合さった割出しテー
ブル10によって極めて精密に行なうことができる。In addition, depending on the number of processing steps, the inner tank 5 can be partitioned into any number of four or more or less, or into a double or triple circumferential shape, and the angle indexing of the substrate can be done using a combined indexing table. 10 can be carried out with great precision.
効 果
以上説明してきたように本発明による装置においては、
外1lII真空槽内に回転できる内1111I真空槽を
設け・この内11111真空僧七回動させることによっ
て異なる気相処4を連α的に行なうことができるように
しているので、特別な搬送機構、ゲートパルプ金はぶき
、装置自体の床面、潰を小さくでき、しb島も内−真空
槽を大気に開放せずVC一連の処理工程における排気が
容易となり、生産性を同上させることができる。Effects As explained above, in the device according to the present invention,
An inner 1111I vacuum chamber that can be rotated is provided within the outer 11II vacuum chamber, and by rotating the inner 11111 vacuum chamber seven times, different gas phase treatments 4 can be performed in succession, so a special transport mechanism is used. , gate pulp gold plating, the floor surface of the equipment itself, and collapse can be reduced, and the internal vacuum chamber is not exposed to the atmosphere, making it easier to exhaust air in a series of VC processing steps, and productivity can be increased. .
第1図は本発明の一実施例による装置fを示す第2図の
矢印I−Iに沿った概略断f図、第2図は第1図の矢印
■−■に沿つ几概略断面図である・図中=2:外槽、
6:天板、 4:導管。
5:内槽、 6:回転駆動軸・ 8:リフトシリンダ、
9:導管、 1o:、11出しテーブル・12:
バルプ穴、 15:パルプ、I4.15:処理装置口
第1図FIG. 1 is a schematic sectional view taken along the arrow II in FIG. 2 showing a device f according to an embodiment of the present invention, and FIG.・In the figure = 2: Outer tank,
6: Top plate, 4: Conduit. 5: Inner tank, 6: Rotation drive shaft, 8: Lift cylinder,
9: Conduit, 1o:, 11 output table, 12:
Vulp hole, 15: Pulp, I4.15: Processing device port Figure 1
Claims (1)
槽と、上記天板に実質的に垂直な軸に平行な方向に移動
できかつ上記軸のまわりを回転でき、上記軸のまわりの
複数個の異なる位置において上記天板に密着して複数個
の異なる気相状態の内側真空槽を形成する内槽と、上記
異なる各位置に対応して上記天板に設けられた異なる処
理装置とを有し、上記内槽内に挿置された被処理物を真
空槽から取り出さずに連続して上記異なる各位置で異な
る処理を行なうようにしたことを特徴とする回転式連続
気相真空プロセス装置。 2、天板に設けられる異なる処理装置がプラズマエツチ
ング装置、プラズマCVD装置、プラズマ重合装置、グ
ラフト重合装置、加熱装置、放射線照射装置、粒子線照
射装置および被処理物挿入、搬出装置のうちの一つまた
はそれ以上から成る特許請求の範囲第1項に記載の装置
。 3、電子ビーム真空製版に用いるため天板に設けられる
異なる処理装置がレジスト塗布用プラズマ重合装置と電
子ビーム描画装置とレジスト現像用加熱装置とを含む特
許請求の範囲第1項に記載の装置。 4、X線真空製版に用いるため天板に設けられる異なる
処理装置がレジスト塗布用プラズマ重合装置とX線図形
焼付装置と気相レジスト現像装置とを含む特許請求の範
囲第1項に記載の装置。[Claims] 1. An outer tank that is combined with a flat top plate to form an outer vacuum tank, and an outer tank that is movable in a direction parallel to an axis substantially perpendicular to the top plate and that moves around the axis. an inner tank that is rotatable and is in close contact with the top plate at a plurality of different positions around the axis to form a plurality of inner vacuum chambers in different gas phase states, and the top plate corresponding to each of the different positions. It is characterized by having different processing devices installed in the inner tank, so that the workpieces placed in the inner tank are continuously subjected to different processing at each of the different positions without taking them out from the vacuum tank. Rotary continuous gas phase vacuum process equipment. 2. The different processing equipment installed on the top plate is one of a plasma etching equipment, a plasma CVD equipment, a plasma polymerization equipment, a graft polymerization equipment, a heating equipment, a radiation irradiation equipment, a particle beam irradiation equipment, and a processing object insertion and removal equipment. A device according to claim 1, comprising one or more. 3. The apparatus according to claim 1, wherein the different processing devices provided on the top plate for use in electron beam vacuum platemaking include a plasma polymerization device for resist coating, an electron beam lithography device, and a heating device for resist development. 4. The apparatus according to claim 1, in which the different processing apparatuses provided on the top plate for use in X-ray vacuum platemaking include a plasma polymerization apparatus for resist coating, an X-ray pattern printing apparatus, and a vapor phase resist development apparatus. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59257652A JPH0669034B2 (en) | 1984-12-07 | 1984-12-07 | Rotary continuous vapor phase vacuum process equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59257652A JPH0669034B2 (en) | 1984-12-07 | 1984-12-07 | Rotary continuous vapor phase vacuum process equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61136234A true JPS61136234A (en) | 1986-06-24 |
JPH0669034B2 JPH0669034B2 (en) | 1994-08-31 |
Family
ID=17309219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59257652A Expired - Lifetime JPH0669034B2 (en) | 1984-12-07 | 1984-12-07 | Rotary continuous vapor phase vacuum process equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0669034B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01230227A (en) * | 1987-11-30 | 1989-09-13 | Daido Sanso Kk | Manufacture of semiconductor |
US5679165A (en) * | 1992-11-30 | 1997-10-21 | Semiconductor Process Laboratory Co., Ltd. | Apparatus for manufacturing semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59186325A (en) * | 1983-04-01 | 1984-10-23 | コンパニ−・アンデユストリエル・デ・テレコミユニカシオン・セイテ−アルカテル | dry etching equipment |
-
1984
- 1984-12-07 JP JP59257652A patent/JPH0669034B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59186325A (en) * | 1983-04-01 | 1984-10-23 | コンパニ−・アンデユストリエル・デ・テレコミユニカシオン・セイテ−アルカテル | dry etching equipment |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01230227A (en) * | 1987-11-30 | 1989-09-13 | Daido Sanso Kk | Manufacture of semiconductor |
US5679165A (en) * | 1992-11-30 | 1997-10-21 | Semiconductor Process Laboratory Co., Ltd. | Apparatus for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0669034B2 (en) | 1994-08-31 |
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