JPS61123188A - Magnetoelectric device using magnetic thin-film having planar magnetoresistance effect - Google Patents
Magnetoelectric device using magnetic thin-film having planar magnetoresistance effectInfo
- Publication number
- JPS61123188A JPS61123188A JP59243318A JP24331884A JPS61123188A JP S61123188 A JPS61123188 A JP S61123188A JP 59243318 A JP59243318 A JP 59243318A JP 24331884 A JP24331884 A JP 24331884A JP S61123188 A JPS61123188 A JP S61123188A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic thin
- longitudinal direction
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 33
- 230000000694 effects Effects 0.000 title claims description 11
- 230000005415 magnetization Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Hall/Mr Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はバブルメモリのバブル軸の検出および電動機の
速度検出用のt+ルスコーダ等に応用されるプレーナ磁
気抵抗効果を有する磁性薄膜を用いた磁電変換装置に関
する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a magnetoelectronic device using a magnetic thin film having a planar magnetoresistive effect, which is applied to a T+L coder for detecting the bubble axis of a bubble memory and the speed of an electric motor. This invention relates to a conversion device.
磁性薄膜のプレーナ(面内)磁気抵抗効果を用いて、数
10エルステッド(にリテッド:10”/4πA/m)
の範囲内において出力電圧が直線的に変化する磁電変換
素子が参照文献: K、E、Kuljk他rTHE B
訊B皿POI、E 、 A LINEARMAGNET
ORESISTffE HEADJ 。Using the planar (in-plane) magnetoresistive effect of a magnetic thin film, the
Reference literature: K, E, Kuljk et al. rTHE B
Question B plate POI, E, A LINEARMAGNET
ORESISTffE HEADJ.
IEEE Transactions on Magn
eties t vat 、 Mag−11Jf65
# ’September 1975 、に提案されて
いる。この磁電変換素子は磁化容易軸に対して電流が4
5度の角度で流れ、磁界が電流に45度の角度で面内に
印加された時、磁界の大きさに対して磁気抵抗素子の抵
抗値変化がはぼ直線直に変化することを利用して、差動
的に出力電圧を取り出すものである。この基本構成が第
4図または第5図忙示される。すなわち、ニッケル・鉄
(NiFe)合金である/4’−マロイの磁性薄膜11
に導電材料による電気力線の短絡用電極13を磁化容易
軸の方向(矢印Mで表示)に対し45度(角R8T’(
第4図))または135度(第5図)のいずれか一方の
角度をもって配置する。このような構成を用いると、電
流の流れる方向(矢印lで表示)は短絡用型4i1ij
13にほぼ垂直な方向となり、磁化容易軸に対して電流
の方向が45度または135度となり、磁界Hが磁性薄
膜11面内で磁化容易軸と垂直の方向(矢印Hで表示)
に与えられると、磁界の変化により大きな抵抗直交化が
生ずる磁電変換素子が得られる。IEEE Transactions on Magn
eties t vat, Mag-11Jf65
# 'September 1975, proposed. This magnetoelectric conversion element has a current of 4 with respect to the axis of easy magnetization.
When the current flows at an angle of 5 degrees and a magnetic field is applied in the plane at an angle of 45 degrees, the resistance value of the magnetoresistive element changes almost linearly with the magnitude of the magnetic field. The output voltage is extracted differentially. This basic configuration is shown in FIG. 4 or 5. That is, the magnetic thin film 11 of /4'-malloy, which is a nickel-iron (NiFe) alloy,
The electrode 13 for short-circuiting the lines of electric force using a conductive material is set at 45 degrees (angle R8T' (
(Fig. 4)) or 135 degrees (Fig. 5). When such a configuration is used, the direction of current flow (indicated by arrow l) is the short circuit type 4i1ij
13, the direction of the current is 45 degrees or 135 degrees with respect to the axis of easy magnetization, and the magnetic field H is in the direction perpendicular to the axis of easy magnetization within the plane of the magnetic thin film 11 (indicated by arrow H).
, a magnetoelectric transducer is obtained in which large resistance orthogonalization occurs due to changes in the magnetic field.
〔発明が解決しようとする問題点〕
しかしながら、前述の構成になる磁電変換素子は、磁性
薄膜110幅W方向の端部(例えば第4図におけるSW
で囲まれた部分)において、2つの帯状電極13の平行
配列状態が乱れるため、電気力線が電極13に対してそ
の近傍以外では垂直どならないで広がり、すなわち、霜
、流の方向iが磁性薄膜11の長手方向に対して45度
または135度とならないという問題点がある。このた
め出力特性が第3図の破線で示されるように、磁界の強
さに対して直線状とならず、面内磁界の増大と共忙出力
の増分カミ減少する。本発明は磁電変換装置における上
述のような問題点を改善しようとするものである。[Problems to be Solved by the Invention] However, the magnetoelectric transducer having the above-mentioned configuration has a problem in that the end portion of the magnetic thin film 110 in the width W direction (for example, SW in FIG.
Since the parallel arrangement of the two strip electrodes 13 is disrupted in the area surrounded by There is a problem that the angle is not 45 degrees or 135 degrees with respect to the longitudinal direction of the thin film 11. Therefore, as shown by the broken line in FIG. 3, the output characteristic is not linear with respect to the strength of the magnetic field, and as the in-plane magnetic field increases, the incremental value of the busy output decreases. The present invention aims to improve the above-mentioned problems in magnetoelectric transducers.
従って本発明の目的は、帯状の磁性薄膜の幅方向の端部
の電気力線短絡用電極の形状を変更するという着想に基
づき、磁性薄膜の幅方向の端部忙おいても電流の通電方
向が電気力線短絡用電極の長手方向に対して可能な限り
直角方向に整列し広がらないようにし、それにより磁界
と磁電変換素子の抵抗値の関係が直線的な、すなわち磁
界に対して出力電圧が直線的に変化する磁電変換装置を
得ることにある。Therefore, an object of the present invention is based on the idea of changing the shape of the electric force line short-circuiting electrode at the widthwise end of a strip-shaped magnetic thin film, and the present invention is based on the idea of changing the shape of the electric force line short-circuiting electrode at the widthwise end of the magnetic thin film. The lines of electric force are aligned as perpendicularly to the longitudinal direction of the short-circuiting electrode as possible and do not spread out, so that the relationship between the magnetic field and the resistance value of the magnetoelectric transducer is linear, that is, the output voltage with respect to the magnetic field. The object of the present invention is to obtain a magnetoelectric transducer that changes linearly.
本発明は、上記問題点を改善した装置を提供するもので
、その手段は、帯状の薄膜形状をなし、その長手方向に
磁化容易軸を有し、その長手方向に対しほぼ45度また
は135度のいずれか一方の角度をもって電気力線の短
絡用電極を設け、薄膜面内で核長手方向に対してほぼ9
0度の方向に磁界が加えられるようにしたプレーナ磁気
抵抗効果を有する磁性薄膜を用いた磁電変換装置におい
て、該電気力線の短絡用の!極が、互いに隣接す −る
該電極における、該電極の長手方向に対し直角方向に対
面する隣接電極の存在する部分を除いた部分の隣接電極
間距離を大きくするよう圧したプレーナ磁気抵抗効果を
有する磁性薄膜を用いた磁電変換装置によってなされる
。The present invention provides a device that improves the above-mentioned problems, and the means thereof is in the form of a strip-like thin film, having an axis of easy magnetization in the longitudinal direction, and approximately 45 degrees or 135 degrees with respect to the longitudinal direction. An electrode for short-circuiting the lines of electric force is provided at an angle of approximately 9 to the longitudinal direction of the nucleus within the thin film plane
In a magnetoelectric transducer using a magnetic thin film having a planar magnetoresistive effect in which a magnetic field is applied in the 0 degree direction, the electric field lines are short-circuited! The planar magnetoresistive effect in which the poles are pressed to increase the distance between adjacent electrodes in a portion of the adjacent electrodes excluding the portion where adjacent electrodes facing each other in a direction perpendicular to the longitudinal direction of the electrodes is present. This is done by a magnetoelectric transducer using a magnetic thin film.
本発明は、上述のように構成された磁電変換装置を用い
て、電気力線の短絡用電極間に或一定電流を供給!−て
おき、磁電変換装置の磁性薄膜の面内において磁化容易
軸と垂直方向の磁界を受けるようKすれば、磁性薄膜の
幅方向端部における電流の方向が該短絡用電極の長手方
向に対して垂直方向に整列するよう改善され、該短絡用
電極から得られる出力電圧が外部からの磁界の強さに対
し直線的な関係を有するようにできる。The present invention uses a magnetoelectric transducer configured as described above to supply a certain current between electrodes for shorting lines of electric force! - If the magnetic thin film of the magnetoelectric transducer is placed so that it receives a magnetic field in the plane perpendicular to the axis of easy magnetization, the direction of the current at the widthwise end of the magnetic thin film will be relative to the longitudinal direction of the shorting electrode. The shorting electrodes are improved to be vertically aligned so that the output voltage obtained from the shorting electrode has a linear relationship to the strength of the external magnetic field.
本発明の一実施例としてのプレーナ磁気抵抗効果を有す
る磁性薄膜を用いた磁電変換装置の磁電変換素子の平面
図が第1図および第2図に示される。第1図において、
磁性薄膜11は帯状であって、厚さがほぼ300オング
ストロ一ム以上、幅w−b%1oから50マイクロメー
トル、であってノぐ一マロイから成り、磁化容易軸が矢
印Mの方向に与えられている。この磁性薄膜11は磁化
容易軸に対して45度または135度の方向に電流を通
電した時、磁性薄膜110面内で磁化容易軸に垂直な磁
界(矢印Hで表示)に対し大きな抵抗値変化をもたらす
。1 and 2 are plan views of a magnetoelectric transducer element of a magnetoelectric transducer using a magnetic thin film having a planar magnetoresistive effect as an embodiment of the present invention. In Figure 1,
The magnetic thin film 11 is strip-shaped, has a thickness of approximately 300 angstroms or more, a width w-b%1o to 50 micrometers, and is made of 100% Malloy, with an axis of easy magnetization in the direction of arrow M. It is being This magnetic thin film 11 has a large resistance value change in response to a magnetic field perpendicular to the easy magnetization axis (indicated by arrow H) within the plane of the magnetic thin film 110 when current is applied in a direction of 45 degrees or 135 degrees to the easy magnetization axis. bring about.
従って45度の方向の電流を通電するため、複数個の電
気力線の短絡用電極12(図中縦線を付した部分として
示す)を磁性薄膜11の上に金Au等を蒸着等の方法に
より付着する。電極12は平面形状が帯状であって、そ
の長手方向が、磁性薄膜11の磁化容易軸の方向(本例
では長方形状の磁性薄膜11の長い方の一辺AA’の方
向に等しい)に対し45度をなしている。第1図に示さ
れた電極1201つについて、その四辺形の形状の頂点
をB、C,Diとし、点Bは辺AA’上にあり、点りは
辺AA’に対面する磁性薄膜11の他の一辺上にあると
し、点Bと点Cを結ぶ線の延長と前記他の一辺との交点
なFとし、点りと点Eを結ぶ線の延長と辺AA’との交
点をGとする。さらに第1図忙おいて点B、C,D、E
に囲まれた電極12の左側に隣接する電極12の前記点
Cに対応する点を点21点Bk対応する点を点りとし、
右側に隣接する電極12の点Eに対応する点を点N1点
りに対応する点を点にと呼称する。Therefore, in order to pass current in the 45-degree direction, a plurality of short-circuiting electrodes 12 (indicated by vertical lines in the figure) for shorting the lines of electric force are formed on the magnetic thin film 11 using a method such as vapor deposition of gold, Au, etc. It adheres to the surface. The electrode 12 has a strip-like planar shape, and its longitudinal direction is 45 mm with respect to the direction of the axis of easy magnetization of the magnetic thin film 11 (in this example, the direction of the long side AA' of the rectangular magnetic thin film 11). It's moderate. Regarding one electrode 120 shown in FIG. 1, the vertices of the quadrilateral shape are designated as B, C, and Di, and the point B is on the side AA', and the dot is on the magnetic thin film 11 facing the side AA'. Let F be the intersection of the extension of the line connecting point B and point C with the other side, and let G be the intersection of the extension of the line connecting point B and point E and side AA'. do. Furthermore, in Figure 1, points B, C, D, and E
A point corresponding to the point C of the electrode 12 adjacent to the left side of the electrode 12 surrounded by is set as a point 21, and a point corresponding to Bk is set as a point,
A point corresponding to point E on the electrode 12 adjacent to the right side is called a point N1, and a point corresponding to point E is called a point.
角ABCおよび角ALPは45度となるよう配置される
。互いに隣接する電極における、該電極の長手方向(C
B方向)に対し直角方向(PD方向)に対面する隣接電
極の存在する部分(PL、DE、CB。Angle ABC and angle ALP are arranged to form an angle of 45 degrees. In the longitudinal direction of the electrodes (C
The portions where adjacent electrodes exist (PL, DE, CB) facing in the direction perpendicular to the B direction (PD direction).
CN部分)を除いた部分(EB、CD部分)の電極は、
隣接する電極との距離が大きくなるように、従来形の電
極に比べて一部(KGB、CFD部分が除去されてい、
る。本例では点EとB、点CとDをそれぞれ直線で結ん
だ形状の電極が用いられているが、これ以外に適当な曲
線で結んだ形状の電極を用いることもできる。The electrodes of the parts (EB, CD parts) excluding the CN part) are as follows:
Compared to conventional electrodes, some parts (KGB, CFD parts are removed) so that the distance between adjacent electrodes is larger.
Ru. In this example, electrodes are used in which points E and B and points C and D are connected by straight lines, but electrodes in which they are connected by appropriate curves may also be used.
このような複数個の電極12を配置した磁性薄膜11を
用いた装置においては、電極120間に電流を流した時
、電流の方向、すなわち電気力線の方向が大部分、電極
の長手方向に対し直角の方向になる。特に従来形の電極
におけるような電極の幅W方向の端部における電気力線
の広がりが、本実施例の場合少なくなるよう改善される
。このようにして電流の方向が磁性薄膜11の磁化容易
軸に対して45度の条件を保持できるので第3図の特性
図に示されるような特性の改善が可能となる。In a device using such a magnetic thin film 11 with a plurality of electrodes 12 arranged, when a current is passed between the electrodes 120, the direction of the current, that is, the direction of the electric lines of force is mostly in the longitudinal direction of the electrodes. The direction is perpendicular to the opposite direction. In particular, in this embodiment, the spread of electric lines of force at the ends of the electrode in the width W direction, which is the case with conventional electrodes, is reduced. In this way, the direction of the current can be kept at 45 degrees with respect to the axis of easy magnetization of the magnetic thin film 11, making it possible to improve the characteristics as shown in the characteristic diagram of FIG.
第3図の特性図は、横軸に面内磁界(エルステッド)、
縦軸に出力電圧(ミリデルト)をもって表わされ、破線
で従来形の、実線で本実施例の特性をそれぞれ示してい
る。これによれば面内磁界の変化に対する出力電圧の直
線性が実施例の装置において改善されていることがわか
る。なお出力電圧は磁性薄膜11に5ミリアン4アの電
流を通電した時の値である。The characteristic diagram in Figure 3 shows the in-plane magnetic field (Oersted) on the horizontal axis,
The output voltage (millidelts) is plotted on the vertical axis, and the broken line shows the characteristics of the conventional type, and the solid line shows the characteristics of the present embodiment. This shows that the linearity of the output voltage with respect to changes in the in-plane magnetic field is improved in the device of the example. Note that the output voltage is the value when a current of 5 milliamps and 4 amperes is passed through the magnetic thin film 11.
第2図の磁電変換素子の平面図は磁化容易軸の方向に対
して、電流を135度の方向に通電するようにした時の
他の例を示すもので、その他は第1図の素子と同様であ
る。第1図の磁電変換素子を用いた場合は磁界の増大に
より素子の抵抗値が増加するが(すなわち正素子)、第
2図の磁電変換素子は抵抗値が減少する(すなわち負累
子)。The plan view of the magnetoelectric conversion element in Figure 2 shows another example in which the current is applied in a direction of 135 degrees with respect to the direction of the axis of easy magnetization, and the other examples are the same as the element in Figure 1. The same is true. When the magnetoelectric transducer shown in FIG. 1 is used, the resistance value of the element increases as the magnetic field increases (ie, a positive element), but the resistance value of the magnetoelectric transducer shown in FIG. 2 decreases (ie, a negative resistor).
第5図は、第2図の磁電変換素子に対応する従来形の磁
電変換素子の平面図を示す。FIG. 5 shows a plan view of a conventional magnetoelectric transducer corresponding to the magnetoelectric transducer shown in FIG.
本発明によれば、磁電変換素子の磁性薄膜の幅−方向の
端部においても電流の通電方向が電気力線短絡用電極の
長手方向に対して可能な限り直角方向に整列し、電気力
線が広がらないようにし、それにより磁界と磁電変換素
子の抵抗値の関係が直線的な、すなわち磁界に対して出
力電圧が直線的に変化する磁電変換装置が得られる。According to the present invention, the direction of current flow is aligned as perpendicularly as possible to the longitudinal direction of the electric field shorting electrode even at the ends in the width direction of the magnetic thin film of the magnetoelectric transducer, and the electric field lines As a result, it is possible to obtain a magnetoelectric conversion device in which the relationship between the magnetic field and the resistance value of the magnetoelectric conversion element is linear, that is, the output voltage changes linearly with respect to the magnetic field.
第1図は本発明の一実施例としてのプレーナ磁気抵抗効
果を有する磁性薄膜を用いた磁電変換装置の磁電変換素
子の平面図、第2図は第1図の磁電変換素子の他の例の
平面図、第3図は第1図の装置の特性を従来形の装置の
特性と比較する特性図、および、第4図および第5図は
従来形の磁電変換素子の平面図である。
11・・・磁性薄膜、12・・・電気力線の短絡用’E
極、13・・・従来形の電気力線の短絡用電極。
第1図
第2図
第3図
0、 10. 20 30 40.5
0面内磁界(Oe)
第4図
第51
手続補正書(方式)
昭和60年4月Iぐ日FIG. 1 is a plan view of a magnetoelectric transducer of a magnetoelectric transducer using a magnetic thin film having a planar magnetoresistive effect as an embodiment of the present invention, and FIG. 2 is a plan view of another example of the magnetoelectric transducer shown in FIG. FIG. 3 is a characteristic diagram comparing the characteristics of the device shown in FIG. 1 with those of a conventional device, and FIGS. 4 and 5 are plan views of a conventional magnetoelectric transducer. 11...Magnetic thin film, 12...'E for shorting electric lines of force
Pole, 13: Conventional short-circuiting electrode for electric lines of force. Figure 1 Figure 2 Figure 3 0, 10. 20 30 40.5
Zero in-plane magnetic field (Oe) Figure 4 Figure 51 Procedural amendment (method) Date of April I, 1985
Claims (1)
を有し、その長手方向に対しほぼ45度または135度
のいずれか一方の角度をもって電気力線の短絡用電極を
設け、薄膜面内で該長手方向に対してほぼ90度の方向
に磁界が加えられるようにしたプレーナ磁気抵抗効果を
有する磁性薄膜を用いた磁電変換装置において、該電気
力線の短絡用の電極が、互いに隣接する該電極における
、該電極の長手方向に対し直角方向に対面する隣接電極
の存在する部分を除いた部分の隣接電極間距離を大きく
するようにし、該電極間に電流が通電された時、電気力
線の大部分が該電極の長手方向に対し直角方向に整列す
るように、構成されたことを特徴とするプレーナ磁気抵
抗効果を有する磁性薄膜を用いた磁電変換装置。 2、該隣接電極間距離の増加は端部にかけて直線的に増
加するようにした特許請求の範囲第1項に記載の装置。[Scope of Claims] 1. A strip-shaped thin film having an axis of easy magnetization in its longitudinal direction, and having an angle of approximately 45 degrees or 135 degrees with respect to the longitudinal direction for short-circuiting lines of electric force. In a magnetoelectric transducer using a magnetic thin film having a planar magnetoresistive effect in which an electrode is provided and a magnetic field is applied in a direction approximately 90 degrees to the longitudinal direction within the thin film plane, for shorting the lines of electric force. The distance between adjacent electrodes is increased in a portion of the electrodes adjacent to each other excluding a portion where an adjacent electrode facing perpendicularly to the longitudinal direction of the electrode is present, and a current flows between the electrodes. A magnetoelectric transducer using a magnetic thin film having a planar magnetoresistive effect, characterized in that when energized, most of the lines of electric force are aligned in a direction perpendicular to the longitudinal direction of the electrode. 2. The device according to claim 1, wherein the distance between adjacent electrodes increases linearly toward the ends.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59243318A JPS61123188A (en) | 1984-11-20 | 1984-11-20 | Magnetoelectric device using magnetic thin-film having planar magnetoresistance effect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59243318A JPS61123188A (en) | 1984-11-20 | 1984-11-20 | Magnetoelectric device using magnetic thin-film having planar magnetoresistance effect |
Publications (1)
Publication Number | Publication Date |
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JPS61123188A true JPS61123188A (en) | 1986-06-11 |
Family
ID=17102048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59243318A Pending JPS61123188A (en) | 1984-11-20 | 1984-11-20 | Magnetoelectric device using magnetic thin-film having planar magnetoresistance effect |
Country Status (1)
Country | Link |
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JP (1) | JPS61123188A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105022007A (en) * | 2014-04-28 | 2015-11-04 | 宇能电科技股份有限公司 | Magnetic resistance components and magnetic resistance devices |
-
1984
- 1984-11-20 JP JP59243318A patent/JPS61123188A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105022007A (en) * | 2014-04-28 | 2015-11-04 | 宇能电科技股份有限公司 | Magnetic resistance components and magnetic resistance devices |
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