JPS61120345A - Production of vertical magnetic recording medium - Google Patents
Production of vertical magnetic recording mediumInfo
- Publication number
- JPS61120345A JPS61120345A JP23980384A JP23980384A JPS61120345A JP S61120345 A JPS61120345 A JP S61120345A JP 23980384 A JP23980384 A JP 23980384A JP 23980384 A JP23980384 A JP 23980384A JP S61120345 A JPS61120345 A JP S61120345A
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- Prior art keywords
- film
- cylindrical
- substrate
- conductive film
- magnetic recording
- Prior art date
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- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高密度記録特性の優れた垂直磁気記録媒体の製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method of manufacturing a perpendicular magnetic recording medium having excellent high-density recording characteristics.
従来例の構成とその問題点
短波長記録特性の優れた方式として垂直記録方式が知ら
れている。これは媒体の膜面に垂直方向の残留磁化を利
用するものである。従ってこの方式においては、膜面の
垂直方向に残留磁化が残る垂直異方性膜が必要となる。Conventional Structure and Problems The perpendicular recording method is known as a method with excellent short wavelength recording characteristics. This utilizes residual magnetization in the direction perpendicular to the film surface of the medium. Therefore, this method requires a perpendicularly anisotropic film in which residual magnetization remains in the direction perpendicular to the film surface.
垂直異方性膜としては、CoとCrを主成分とするいわ
ゆるCo−Cr垂直異方性膜が優れた特性を有している
。Co−Cr垂直異方性膜はスパッタリング法や真空蒸
着法(イオンブレーティング法のように蒸発原子の一部
をイオン化して膜を堆積する方法も含む。)により作製
されるが、特に後者の方法によれば非常に高い膜堆積速
度が達成出来、量産に達している。As a vertically anisotropic film, a so-called Co--Cr vertically anisotropic film containing Co and Cr as main components has excellent properties. Co-Cr vertically anisotropic films are produced by sputtering methods and vacuum evaporation methods (including methods in which a film is deposited by ionizing some of the evaporated atoms, such as the ion blating method), but especially the latter method is used. The method allows very high film deposition rates to be achieved and has reached mass production.
しかし、以下に説明するように、実際に真空蒸着法によ
りCo −Cr垂直異方性膜の作製を行なうと、種々の
皺が発生するという問題が生じた。皺が発生すると、磁
気記録媒体として使用することは不可能であり、何らか
の解決策が必要である。However, as will be explained below, when a Co--Cr vertically anisotropic film was actually fabricated by vacuum evaporation, a problem occurred in that various wrinkles were generated. If wrinkles occur, it is impossible to use the material as a magnetic recording medium, and some kind of solution is required.
真空蒸着法によりCo−Cr垂直異方性膜を作製する方
法としては、基板を円筒状キャンの周囲に沿わせて走行
させつつ蒸着を行なう方法が最も優れている。As a method for producing a vertically anisotropic Co--Cr film by vacuum evaporation, the best method is to perform evaporation while moving the substrate along the periphery of a cylindrical can.
第1図はCo−Cr垂直異方性膜を作製するだめの従来
の真空蒸着装置内部の正面図である。FIG. 1 is a front view of the interior of a conventional vacuum evaporation apparatus for producing a Co--Cr vertically anisotropic film.
高分子材料より成る基板1は円筒状キャン2の周面に沿
って走行する。3及び4はそれぞれ基板入側ローラ及び
基板出側ローラであり、テープ状の基板1を案内走行さ
せるものである。6は蒸発源、6は遮蔽板である。以上
の様に構成された従来の真空蒸着装置について以下その
動作を説明する。A substrate 1 made of a polymeric material runs along the circumferential surface of a cylindrical can 2. Reference numerals 3 and 4 are a substrate entry roller and a substrate exit roller, respectively, which guide and run the tape-shaped substrate 1. 6 is an evaporation source, and 6 is a shielding plate. The operation of the conventional vacuum evaporation apparatus configured as described above will be explained below.
基板入側ロー23により案内された高分子材料より成る
基板1は、円筒状キャン2の回転に従いその周面に沿っ
て走行し、基板出側ロー24により巻取り側へ案内され
る。なお、円筒状キャン2は周面の温度を350℃付近
まで任意に温度設定が可能である。蒸発源6はCo−C
r合金インゴットを加熱蒸発させる。遮蔽板6により、
垂直入射に近い成分を有する蒸発原子のみが、高分子材
料よ構成る基板1に付着してCo−Cr垂直異方性膜を
形成する。The substrate 1 made of a polymeric material guided by the substrate entry row 23 travels along the circumferential surface of the cylindrical can 2 as it rotates, and is guided to the winding side by the substrate exit row 24. Note that the temperature of the circumferential surface of the cylindrical can 2 can be arbitrarily set to around 350°C. Evaporation source 6 is Co-C
The r-alloy ingot is heated and evaporated. Due to the shielding plate 6,
Only evaporated atoms having a component close to normal incidence adhere to the substrate 1 made of a polymeric material to form a Co--Cr vertically anisotropic film.
しかし、上記の構成によりCo−Cr垂直異方性膜を作
製すると、下記の様な問題が発生する。即ち、Co−C
r垂直異方性膜に信号を記録再生すると、膜面に垂直方
向の保磁力Hc土の大きな膜はど高い再生出力が得られ
る。HC土は蒸着時の基板温度Tsubが上昇するに従
い高くなる。Co−Cr垂直異方性膜を実用化するため
には、少なくとも300″6oのHc土が必要であるが
、そのためには蒸着時の基板温度Tgubを80℃以上
にしなければならないことが実験の結果間らかになった
。However, when a Co--Cr vertically anisotropic film is manufactured with the above configuration, the following problems occur. That is, Co-C
When a signal is recorded and reproduced in a perpendicularly anisotropic film, a film with a large coercive force Hc in the direction perpendicular to the film surface can obtain a high reproduction output. The temperature of HC soil increases as the substrate temperature Tsub during vapor deposition increases. In order to put a Co-Cr vertically anisotropic film into practical use, a Hc soil of at least 300"6o is required, but experiments have shown that the substrate temperature Tgub during evaporation must be 80°C or higher. The result was clear.
より好ましくはHC土 としてs o o ′6o 以
上の値を有する膜が必要であるが、この場合には蒸着時
の基板温度Tsubは150℃以上にしなければならな
い。なお、こ\で述べた蒸着時の基板温度Tsubとは
円筒状キャンの周面温度のことである。More preferably, a film having a value of soo'6o or more is required as the HC soil, but in this case, the substrate temperature Tsub during vapor deposition must be 150° C. or more. Note that the substrate temperature Tsub during vapor deposition mentioned here refers to the temperature of the peripheral surface of the cylindrical can.
また、高分子材料としては、表面性、安定性、量産性の
点から考えてポリエチレンテレフタレート、ポリイミド
系あるいはポリアミド系のフィルムが適している。とこ
ろがこれらのフィルムを用い、第1図に示される様な方
法によって円筒状キャン2の周面の温度を80℃以上と
して蒸着を行なうと、蒸着部で波状の皺が発生する。Further, as the polymer material, polyethylene terephthalate, polyimide, or polyamide films are suitable in terms of surface properties, stability, and mass productivity. However, when these films are used for vapor deposition at a temperature of 80° C. or higher on the circumferential surface of the cylindrical can 2 by the method shown in FIG. 1, wavy wrinkles occur in the vapor deposition area.
第2図はこの時の基板1上に発生する波状の皺の発生状
態を示す立体図であり、7は波状の皺を示す。このよう
な波状数7は、円筒状キャン2と基板1との接触が不充
分の場合に蒸着部で発生することが明らかになった。そ
こでこれを防止する方法として、高分子材料より成る基
板1の上に導体膜を形成してこの導体膜と円筒状キャン
2との間に電位差を設け、静電引力によって密着させる
ことが考えられる。なお、この導体膜としてパーマロイ
やTiを用いると垂直磁気記録媒体としての記録再生特
性や配向性が向上する。FIG. 2 is a three-dimensional diagram showing how wavy wrinkles are generated on the substrate 1 at this time, and 7 indicates the wavy wrinkles. It has been found that such a undulation number 7 occurs in the vapor deposition part when the contact between the cylindrical can 2 and the substrate 1 is insufficient. Therefore, one possible way to prevent this is to form a conductive film on the substrate 1 made of a polymeric material, create a potential difference between this conductive film and the cylindrical can 2, and bring them into close contact by electrostatic attraction. . Note that when permalloy or Ti is used as this conductive film, the recording/reproducing characteristics and orientation of the perpendicular magnetic recording medium are improved.
第3図は上記の様に導体膜と円筒状キャン2との間に電
位差を設けて、Co−Cr膜を蒸着した場合の状態を示
す立体図である。8は表面(円筒状キャン2に接してい
ない面)に導体膜の形成された高分子材料より成る基板
である。導体膜と円筒状キャン2との間に印加する電圧
としては、直流電圧でも良いし、交流電圧でも良い。上
記の方法によれば、第2図に示される様な波状数7は消
滅するが、基板8が円筒状キャン2に接する際に、ラン
ダムな皺9が発生する。このランダムな皺9の発生する
原因は次の様に考えられる。基板8が円筒状キャン2に
接する際に、円筒状キャン2が高温のだめ、基板8が急
激に加熱され変形を生じる。変形が修正されない状態で
静電引力により円筒状キャン2に密着するため、基板8
にはランダムな皺9が発生する。FIG. 3 is a three-dimensional diagram showing a state in which a Co--Cr film is deposited by providing a potential difference between the conductor film and the cylindrical can 2 as described above. Reference numeral 8 denotes a substrate made of a polymer material on which a conductive film is formed on the surface (the surface not in contact with the cylindrical can 2). The voltage applied between the conductor film and the cylindrical can 2 may be either a direct current voltage or an alternating current voltage. According to the above method, the wavy number 7 as shown in FIG. 2 disappears, but random wrinkles 9 occur when the substrate 8 comes into contact with the cylindrical can 2. The cause of the occurrence of these random wrinkles 9 can be considered as follows. When the substrate 8 comes into contact with the cylindrical can 2, the cylindrical can 2 is heated to a high temperature, and the substrate 8 is rapidly heated and deformed. The substrate 8 is tightly attached to the cylindrical can 2 due to electrostatic attraction without being deformed.
Random wrinkles 9 occur.
第4図は第3図のランダムな皺9を改良することを試み
た装置の立体図である。この装置の構成は第3図と殆ん
ど同じであるか、第4図では基板入側ロー23をニップ
ローラ3′に変更した点が異なっている。ニップローラ
3′の表面は一般にゴムで作られている。表面に導体膜
の形成された高分子材料より成る基板8は、円筒状キャ
ン2に接し始める際K、ニップローラ3′により円筒状
キャン2に押さえつけられる。しかしながらこの構成で
も、円筒状キャン2の温度を高くし、基板8と円筒状キ
ャン2との間に電圧を印加して、Co−Cr垂直異方性
膜を作製すると、基板8が円筒状キャン2に接触する際
に急激な加熱のため変形が発生し、これが修正される前
にニップローラ3′によって押さえつけられるために折
れ皺10が発生する。FIG. 4 is a three-dimensional view of a device that attempts to improve the random wrinkles 9 in FIG. 3. The configuration of this device is almost the same as that in FIG. 3, or the difference in FIG. 4 is that the substrate entry row 23 is replaced with a nip roller 3'. The surface of the nip roller 3' is generally made of rubber. A substrate 8 made of a polymeric material and having a conductive film formed on its surface is pressed against the cylindrical can 2 by a nip roller 3' when it starts coming into contact with the cylindrical can 2. However, even with this configuration, when the temperature of the cylindrical can 2 is raised and a voltage is applied between the substrate 8 and the cylindrical can 2 to produce a Co-Cr vertically anisotropic film, the substrate 8 is moved to the cylindrical can. 2, deformation occurs due to rapid heating, and before this deformation is corrected, it is pressed down by the nip roller 3', resulting in creases 10.
以上の様に従来の構成では、高分子材料より成る基板に
Co−Cr垂直異方性膜を蒸着する際、安定して皺なし
には出来ず、磁気記録媒体としては使用出来ないという
問題点を有していた。As described above, in the conventional structure, when a Co-Cr perpendicular anisotropic film is deposited on a substrate made of a polymer material, it cannot be done stably without wrinkles, and it cannot be used as a magnetic recording medium. It had
発明の目的
本発明は上記の様な問題点を解決するものであり、皺の
ない良好な垂直磁気記録媒体を安定して製造するための
方法を提供することを目的としている。OBJECTS OF THE INVENTION The present invention solves the above-mentioned problems, and aims to provide a method for stably manufacturing wrinkle-free and good perpendicular magnetic recording media.
発明の構成
本発明は80℃以上に昇温された円筒状キャンの周面に
沿って走行しつつある、表面に導体膜の形成された高分
子材料より成る基板上に、CoとCrを主成分とする垂
直異方性膜を真空蒸着法により形成する際に、上記円筒
状キャンとしてその周面が含フッ素系樹脂膜で覆われて
いるものを使用し、かつ上記導体膜と上記円筒状キャン
を異なる電位にするようにした垂直磁気記録媒体の製造
方法であり、本発明の方法を用いることにより皺のない
垂直磁気記録媒体が安定して得られる。Structure of the Invention The present invention is based on a substrate made of a polymeric material with a conductive film formed on the surface, which is running along the circumferential surface of a cylindrical can heated to 80°C or higher. When forming the vertically anisotropic film as a component by vacuum evaporation, the cylindrical can whose circumferential surface is covered with a fluorine-containing resin film is used, and the conductor film and the cylindrical can are This is a method of manufacturing a perpendicular magnetic recording medium in which the cans are set to different potentials, and by using the method of the present invention, a perpendicular magnetic recording medium without wrinkles can be stably obtained.
実施例の説明
第5図は本発明の製造方法の一実施例を説明するための
真空蒸着装置内部の正面図である。DESCRIPTION OF EMBODIMENTS FIG. 5 is a front view of the inside of a vacuum evaporation apparatus for explaining an embodiment of the manufacturing method of the present invention.
図において、円筒状キャン2は接地されている。In the figure, the cylindrical can 2 is grounded.
また、基板入側ローラ3及び基板出側ローラ4は、表面
に導体膜の形成された高分子材料より成る基板8の表面
の導体部と円筒状キャン2との間に電位差を設けるため
に電源11に接続されている。Further, the substrate entry side roller 3 and the substrate exit side roller 4 are powered by a power supply in order to create a potential difference between the conductor portion on the surface of the substrate 8 made of a polymer material with a conductive film formed on the surface and the cylindrical can 2. 11.
なお、その電位は正でも負でも良いし、交流でも良い。Note that the potential may be positive or negative, or may be alternating current.
また、矢印12の場所で基板8は円筒状キャン2に接し
始め、この場所を接触開始部と称する。13は蒸着膜形
成部であり、こ\でCo −Cr垂直異方性膜が形成さ
れる。14は円筒状キャン2の周面で基板8が滑り易い
ように設けられた、含7ノ素系樹脂膜である。次に円筒
状キャン2に入ってから出て行くまでの間での基板8の
変化を考える。基板8は最初、昇温された円筒状キャン
2に(含フッ素系樹脂膜14を通して間接的に)接触開
始部12で触れ急激に加熱されそのために変形を生ずる
こともある。含フッ素系樹脂膜14がない場合は基板8
は、その上の導体膜と円筒状キャン2の間の電位差によ
り、その変形が修正される前に円筒状キャン2に密着し
、ランダムな皺あるいは折れ皺を生じていた。それに対
し、含フッ素系樹脂膜14があると、その基板8との摩
擦係数の小ささにより、例え基板8に変形が生じていて
も、基板8上の導体膜と円筒状キャン2の間の電位差に
よる静電引力でその変形は円筒状キャン2に押さえつけ
られ含フッ素系樹脂膜14上、を滑り平らに伸ばされて
し捷う。この様にして、基板8は含フッ素系樹脂膜14
を間に介し、円筒状キャン2に皺なしで密着して張り付
いてCo−Cr蒸着膜形成部13に着く。次に蒸着膜形
成部13で第2図のような波状の皺が入らないためには
、基板8と円筒状キャン2が十分密着して張り付いてお
ればよく、そのだめには基板8と円筒状キャン2の間に
十分大きい静電引力が働けばよい。含フッ素系樹脂膜1
4が基板8と円筒状キャン2の間に入シ静電引力は弱め
られるとはいえ、基板8上の導体膜と円筒状キャン2の
間の電位差をより大きくすればすむことである。かぐの
如く、本発明の方法によれば皺は全く発生しない。Further, the substrate 8 begins to come into contact with the cylindrical can 2 at the location indicated by the arrow 12, and this location is referred to as a contact start portion. Reference numeral 13 denotes a deposited film forming section, in which a Co--Cr vertically anisotropic film is formed. Reference numeral 14 denotes a heptad-containing resin film provided on the circumferential surface of the cylindrical can 2 so that the substrate 8 can easily slide. Next, consider changes in the substrate 8 from the time it enters the cylindrical can 2 to the time it leaves the cylindrical can. The substrate 8 first comes into contact with the heated cylindrical can 2 at the contact initiation portion 12 (indirectly through the fluorine-containing resin film 14) and is rapidly heated, which may cause deformation. If there is no fluorine-containing resin film 14, the substrate 8
Due to the potential difference between the conductor film thereon and the cylindrical can 2, the cylindrical can 2 adhered tightly to the cylindrical can 2 before its deformation was corrected, causing random wrinkles or creases. On the other hand, when there is a fluorine-containing resin film 14, the coefficient of friction between it and the substrate 8 is small, so even if the substrate 8 is deformed, the fluorine-containing resin film 14 has a small friction coefficient between the conductor film on the substrate 8 and the cylindrical can 2. Due to the electrostatic attraction caused by the potential difference, the deformation is suppressed by the cylindrical can 2, and it slides on the fluorine-containing resin film 14 and is stretched flat. In this way, the substrate 8 is coated with the fluorine-containing resin film 14.
The film adheres tightly to the cylindrical can 2 without wrinkles through the space between them, and reaches the Co--Cr vapor deposited film forming portion 13. Next, in order to prevent the formation of wavy wrinkles as shown in FIG. It is sufficient that a sufficiently large electrostatic attraction force acts between the cylindrical cans 2. Fluorine-containing resin film 1
4 is inserted between the substrate 8 and the cylindrical can 2, although the electrostatic attraction is weakened, it is sufficient to increase the potential difference between the conductive film on the substrate 8 and the cylindrical can 2. As you can see, the method of the present invention does not cause wrinkles at all.
尚、電源11の具体的電圧値、含フッ素系樹脂膜14の
膜厚、円筒状キャン2の温度、基板8の幅及び膜厚、基
板8上の導体膜の膜厚等は相互に依存をし、場合で異な
る。Note that the specific voltage value of the power source 11, the thickness of the fluorine-containing resin film 14, the temperature of the cylindrical can 2, the width and thickness of the substrate 8, the thickness of the conductive film on the substrate 8, etc. are dependent on each other. However, it varies depending on the case.
又、基板8のヤング率が高い時など、完全に皺の取れな
い場合があったが、基板8を接触開始部12と蒸着膜形
成部136間でハロゲンライト15を用い加熱し柔軟化
すると皺は全く発生しなくなった。In addition, when the Young's modulus of the substrate 8 is high, wrinkles may not be completely removed in some cases, but the wrinkles can be removed by heating the substrate 8 between the contact initiation part 12 and the deposited film forming part 136 using a halogen light 15 to soften it. no longer occurs at all.
次に本発明の具体的実施例について説明する。Next, specific examples of the present invention will be described.
第5図に示した真空蒸着装置(円筒状キャン2の直径は
6QcrIL)によって幅15cm、膜厚5oμmのポ
リイミド系フィルム上に膜厚3oQO人のノζ−マロイ
膜を蒸着し、さらにその上に膜厚1500人のCo −
Cr垂直異方性膜を本発明の方法に従い蒸着した。但し
、幅115cmのフィルムの幅方向の両端I Cmは、
マージン部として蒸着膜を形成しなかった。即ち、蒸着
膜の形成されている幅は13cmである。パーマロイ膜
蒸着の際には、円筒状キャン2の周面の温度を室温に設
定したので、皺は入らなかった。パーマロイ膜の上に更
にCo−Cr垂直異方性膜を蒸着する際の条件としては
、円筒状キャン2の温度100℃、含7フ素系樹脂膜1
4の厚み30μm、又電源11により金属ローラ3゜4
に−5ooVの電圧を印加した。蒸着の完了した垂直磁
気記録媒体において、皺は皆無であった。A ζ-malloy film with a thickness of 3oQO is deposited on a polyimide film with a width of 15cm and a film thickness of 5oμm using the vacuum evaporation apparatus shown in Fig. 5 (the diameter of the cylindrical can 2 is 6QcrIL), and then Co − with a film thickness of 1500 people
A Cr vertically anisotropic film was deposited according to the method of the present invention. However, both ends I Cm in the width direction of a film with a width of 115 cm are:
No vapor deposited film was formed as a margin part. That is, the width of the deposited film is 13 cm. During the permalloy film deposition, the temperature of the circumferential surface of the cylindrical can 2 was set at room temperature, so no wrinkles were formed. The conditions for further vapor-depositing the Co-Cr vertically anisotropic film on the permalloy film are as follows: the temperature of the cylindrical can 2 is 100°C, the fluorine-containing resin film 1 is
4 has a thickness of 30 μm, and the metal roller 3°4 is powered by the power supply 11.
A voltage of -5ooV was applied to. There were no wrinkles in the perpendicular magnetic recording medium after the vapor deposition was completed.
また、Co −Cr垂直異方性膜のHc土は7QO′6
゜となっており、優れた短波長記録再生特性を示した。In addition, the Hc soil of the Co-Cr vertically anisotropic film is 7QO'6
°, demonstrating excellent short wavelength recording and reproducing characteristics.
発明の詳細
な説明したように本発明の方法によれば、従来、高分子
材料よりなる基板上にCo−Cr垂直異方性膜を蒸着す
る際に生じていた皺を完全に除去することが可能であり
、皺のない垂直磁気記録媒体を提供出来る。DETAILED DESCRIPTION OF THE INVENTION According to the method of the present invention, it is possible to completely remove the wrinkles that conventionally occur when depositing a vertically anisotropic Co-Cr film on a substrate made of a polymeric material. It is possible to provide a wrinkle-free perpendicular magnetic recording medium.
第1図はCo−Cr垂直異方性膜を作製するための従来
の真空蒸着装置内部の正面図、第2図、第3図、第4図
は従来の真空蒸着装置において基板に発生する皺を説明
するための立体図、第5図は本発明の製造方法の一実施
例を説明するための真空蒸着装置内部の正面図である。
1.8・・・・・・基板、2・・・・・・円筒状キャン
、3・・・・・・基板入側ローラ、4・・・・・・基板
出側ローラ、5・・・・・・蒸発源、6・・・・・・遮
蔽板、7・・・・・・波状皺、9・・・・・・ランダム
な皺、1o・・・・・・折れ皺、11・・・・・・電源
、12・・・・・・矢印・接触開始部、13・・・・・
・蒸着膜形成部、14・・・・・・含フッ素系樹脂膜、
15・・・・・・ハロゲンライト。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
第2図
!
第3図
第4図Figure 1 is a front view of the inside of a conventional vacuum evaporation apparatus for producing a vertically anisotropic Co-Cr film, and Figures 2, 3, and 4 show wrinkles that occur on a substrate in a conventional vacuum evaporation apparatus. FIG. 5 is a front view of the inside of a vacuum evaporation apparatus for explaining one embodiment of the manufacturing method of the present invention. 1.8... Board, 2... Cylindrical can, 3... Board entry roller, 4... Board exit roller, 5... ... Evaporation source, 6 ... Shielding plate, 7 ... Wavy wrinkles, 9 ... Random wrinkles, 1o ... Folded wrinkles, 11 ... ...Power supply, 12...Arrow/contact start part, 13...
・Vapour-deposited film forming part, 14...Fluorine-containing resin film,
15...Halogen light. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2! Figure 3 Figure 4
Claims (2)
って走行しつつある、表面に導体膜の形成された高分子
材料より成る基板上に、CoとCrを主成分とする垂直
異方性膜を真空蒸着法により形成する際に、上記円筒状
キャンとしてその周面が含フッ素系樹脂膜で覆われてい
るものを使用し、かつ上記導体膜と上記円筒状キャンを
異なる電位にすることを特徴とする垂直磁気記録媒体の
製造方法。(1) On a substrate made of a polymeric material with a conductive film formed on its surface, which is running along the circumferential surface of a cylindrical can whose temperature has been raised to 80°C or more, Co and Cr are the main components. When forming the vertically anisotropic film by vacuum evaporation, the cylindrical can whose peripheral surface is covered with a fluorine-containing resin film is used, and the conductive film and the cylindrical can are different. A method for manufacturing a perpendicular magnetic recording medium, characterized in that the medium is made to have a potential.
製造方法において、上記基板と上記円筒状キャンの接触
開始部から蒸着膜形成部に至る間で、上記基板をハロゲ
ンライト等で加熱することを特徴とする垂直磁気記録媒
体の製造方法。(2) In the method for manufacturing a perpendicular magnetic recording medium according to claim 1, the substrate is heated with a halogen light or the like between the contact initiation portion of the substrate and the cylindrical can to the vapor deposited film forming portion. A method of manufacturing a perpendicular magnetic recording medium, characterized in that:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23980384A JPS61120345A (en) | 1984-11-14 | 1984-11-14 | Production of vertical magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23980384A JPS61120345A (en) | 1984-11-14 | 1984-11-14 | Production of vertical magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61120345A true JPS61120345A (en) | 1986-06-07 |
Family
ID=17050090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23980384A Pending JPS61120345A (en) | 1984-11-14 | 1984-11-14 | Production of vertical magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61120345A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166324A (en) * | 1987-12-22 | 1989-06-30 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
JPH027228A (en) * | 1988-06-25 | 1990-01-11 | Sony Corp | Production of magnetic recording medium |
-
1984
- 1984-11-14 JP JP23980384A patent/JPS61120345A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166324A (en) * | 1987-12-22 | 1989-06-30 | Matsushita Electric Ind Co Ltd | Magnetic recording medium |
JPH027228A (en) * | 1988-06-25 | 1990-01-11 | Sony Corp | Production of magnetic recording medium |
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