JPS61117520A - Semiconductor device - Google Patents

Abstract

PURPOSE:To complete mask alignment by two times of operations only and to prevent cross talks between adjacent picture elements, by using a common pattern to the electrode of liquid crystal and one of the 1st electrodes of a nonlinear element and insulating the side section of the semiconductor on the 1st electrode. CONSTITUTION:When a common pattern is used for the 3rd electrode 23 of liquid crystal 3 and one of the 1st electrodes 21 of an nonlinear element 2, only two photomasks become sufficient to manufacture a base plate 20 on the side equipped with an active element. Moreover, the electrode 22 of the 1st picture element at a lead 4, electrode 22' of the 2nd picture element adjacent to the 1st picture element, and another lead 25 between the electrodes 22 and 22' are made to have the same width so as to constitute them simultaneously even to the deviation of the pattern in the lateral direction. At the opened groove between two semiconductors 2 and 2', the semiconductor is removed and leads are provided on insulating bodies 28 and 28' at the side of the semiconductors and the base plate 20. Since the semiconductors 2 and 2' are insulated by the insulating bodies 28 and 28', crosstalks between them are removed. Therefore, mask alignment can be completed by two times of operations only and crosstalks between adjacent picture elements are prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Application of the Invention The present invention relates to solid-state display devices, image sensors, etc., which solidify display parts of microcomputers, word processors, televisions, etc. by providing a display element, preferably a liquid crystal display panel. Alternatively, the present invention relates to a semiconductor device having nonlinear characteristics that is applied to a liquid crystal printer.

``Prior Art'' For solid-state display panels, a system in which each picture element is controlled independently is effective for large-area displays. A channel using such active elements has 640 elements in the horizontal direction (640 x 3 = 1920 elements in the case of full color) and 2 in the vertical direction.
A display device having a large-area matrix structure of A4 size or larger and having 00 elements or 526 elements is known.

However, in such a large-area surface water device, each active element (hereinafter also referred to as a pixel) has cross-crossing between adjacent pixels, which are arranged in a matrix at a predetermined distance apart. It is easy to cause talk (electrical weakness (conduction phenomenon). Therefore, one side is ON.
.

Even if the other side created an OFF function, each pixel could easily be turned on or off, resulting in insufficient contrast.

"Problems to be Solved by the Invention" In such a large-area display device, in order to completely eliminate crosstalk between each pixel, it is necessary to prevent semiconductors, including amorphous semiconductors, from existing between adjacent pixels. It is important to perform electrical isolation by covering with an insulating material. However, when each pixel was associated with 181 semiconductors constituting the pixel, four types of photomasks were required in the manufacturing process.

Therefore, when this photomask is applied once, it goes through 7 steps (resist coating, baking, buttering, development, partial removal of resist, selective etching of the workpiece,
This necessitated resist removal (removal of the resist), which was an extremely serious hindrance to lowering manufacturing yields. For this reason, there has been a demand for a semiconductor device structure in which the number of mask alignments is only once for every two types, and in which crosstalk between adjacent pixels can be completely prevented.

"Means for Solving the Problem" In order to solve the problem, the present invention aims to solve the problem by
(electrode) and one electrode (first electrode) of the nonlinear element have a common pattern, and a semiconductor is placed on the first electrode with its sides insulated for isolation.

Further, a lead extending from the second electrode on the semiconductor crosses over the insulating film (actually, the side surface) and is connected to another second electrode of an adjacent pixel by a conductor. As a result, since a self-line process was used for mask alignment, only two masks were required, and no semiconductor remained between adjacent pixels, making it possible to completely prevent crosstalk. In addition, the semiconductor is around that side (the top and bottom are electrodes)
is covered with an insulating material and is passivated. This passivation film also prevents crosstalk between pixels.

Furthermore, the nonlinear element used in this invention uses a non-single crystal semiconductor, and its material composition is 5i(N)-9ixC1-x
(0<X≦1)(1)'-3i(N) structure, 5i(NI
PIN) structure or 5i(N) -3ixC+-x(0
<X<1) (1) −3ixC+−x(0<X≦1)(
1) -3i*Ct-x(0<X<1)(1)-3t
(N) structure (where N is N-type, ■ is intrinsic or substantially intrinsic, P is P-type, and (1) represents a barrier layer) or its tandem laminated structure and modified structure. I am the lord.

The nonlinear element used in the present invention has a pair of electrodes (first
A typical example is an N-type semiconductor-I type (hereinafter referred to as "intrinsic" or "substantially intrinsic")' Semiconductor - A semiconductor with an NIN structure formed by stacking N-type semiconductors, that is, a NIN junction in which an Nl junction and an IN junction are electrically connected in opposite directions and integrated as a semiconductor, and its variations. NN7N, NP-N.

It is a composite diode having a NIPIN, NIP-IN, or NIP"IN structure (hereinafter, for simplicity, these are collectively referred to as NIN type diodes).

The threshold voltage of such a composite diode makes the diode characteristics opposite to each other, and its build-in (rise) voltage (threshold)
The conductivity type can be determined by a small amount of impurity such as phosphorus, which determines the conductivity type at or near the Nl interface of the P junction, and by the difference in height of the energy edge between the Nl interface and the IP interface. Therefore, by controlling the manufacturing process, it is possible to control the value of the threshold voltage of a desired element, the difficulty of current flow below the threshold value, and the ease of current flow above the threshold value.

Furthermore, the present invention can be completed by simply matching one mask in which the X wiring constituting the composite diode and the matrix and the nonlinear element thereunder have approximately the same shape. One electrode (third electrode) of the display and one electrode (first electrode) of the connected composite diode are connected to a common rectangular electrode, and an X or an X wiring (in the drawing, an X wiring) on the semiconductor above the common rectangular electrode. Therefore, the process can be carried out using only two masks, each consisting of a second mask, which is necessary for forming the X wiring (representatively shown below as an X wiring). A typical example of the structure of the present invention is shown in FIG. 4, and the manufacturing process thereof is shown in FIG.

Furthermore, for solid-state display elements such as liquid crystals, AC bias is applied to the other electrode (fourth electrode) of the liquid crystal, leads are wired in the Y direction, and the electrical level is controlled to achieve full color and gradation. It also has the feature of being controllable.

``Function'' In this way, even for large-area matrix formation of A4 size or larger, the leads in the X direction can be arranged closely on the insulator in the stripe portion between each pixel, and each pixel can be Passivation made it possible to eliminate electrical leakage from adjacent elements. In addition, by making the second electrode and the lead connected to it the same width, alignment accuracy in the X direction can be reduced to ±200μ or less (theoretically within ±3a+m). The process is now possible with precision alignment.

In addition, as shown in Figures 1 and 4, the other Y of the liquid crystal
&! By dividing the cotton and electrode into three parts and passing them through red (referred to as R), green (referred to as G), and blue (referred to as B) filters corresponding to each electrode or each active element, the level can be independently adjusted. Voltage can be applied as the Y axis. Therefore, it has the feature that it is possible to perform gradations for R, G, and H.

The present invention will be explained below according to examples.

"Example 1" FIG. 1 shows a circuit diagram using the solid state display device of the present invention.

In the drawing, the picture element is the electrode (2) of the composite diode (2).
1) One electrode (2) of the liquid crystal (3) than (1st electrode)
3) Connected to (third electrode). The compound diode is the address line (4) of the X wiring that provides the clock signal,
(5) by a second electrode (22).

On the other hand, the fourth electrode (24) of the liquid crystal (3) is connected to the data lines (6) and (7) of the X wiring. The X wiring is a fourth electrode (24) divided into three parts corresponding to one third electrode (23) ((6-1 in Fig. 1 and Fig. 4(C)).
), (6-2).

(6-3) (6) or (24)) is a counter or other transparent insulating substrate, typically a glass substrate (Fig. 45 (C)).
) are connected correspondingly to the (20°) side. And this fourth electrode (14) is R (red), G
(green) and B (blue) filters, providing full color.

This X wiring is connected to the same insulating substrate, typically a glass substrate (fourth
(20) in Figures (B), (C), and (D)
) is provided above. As a result, crosstalk (33
) is likely to occur, and it is an object of the present invention to make the resistance of this portion 109Ω or more, preferably 10I0Ω or more.

Such picture elements are arranged in a matrix, and in the drawing, 2
2 X 3 (R, G, B) was shown. However, the present invention does not require such a small matrix (for example, a scaled-up display device (640 x 3 pixels (R, G,
B) Effective for large matrix panels such as x200 or 512).

Figures 2 and 3 show an example of the manufacturing process and characteristics of a nonlinear element that is part of a pixel using a composite diode such as
Shown in the figure.

The manufacturing process shown in FIG. 2 is (30
) is particularly suitable for expanding the manufacturing area.

Figure 2 (A), (B), (C), (D-1
) corresponds to the longitudinal sectional view of FIG. 4A-^゛. FIG. 2 (D-2), (f corresponds to the vertical cross-sectional view taken along line c-c' shown in FIG. 4, and shows the element structure thereof.

In FIG. 2(A), non-alkali glass (20) was used as the light-transmitting insulating substrate. On this upper surface, a conductive film of ITO or tin oxide was formed to a thickness of 0.1 to 0.5 μm by sputtering or electron beam evaporation.

After this, N is applied to the entire surface using plasma gas phase reaction method.
IN(N(T)I(1)N, NIPIN, N(1)IP
A composite diode made of a non-single crystal semiconductor having a structure (including I(I)N) was formed. That is, a non-single-crystal semiconductor having an (1O) amorphous structure is produced on a surface to be formed on a substrate maintained at 200 to 300° C. by subjecting an N-type semiconductor to silane with a high-frequency glow discharge of 13.56 MIIZ.

Its electrical conductivity is 101~10-'(ΩcI11)-
It had a weight of 50 to 500 people. Further next,
The vacuum was sufficiently drawn to 10-6 to 10-'torr. Furthermore, silane (SimHill+i e.g. m=l
5iH4) was used to form a ■-type non-single crystal semiconductor to a thickness of 500 to 1 μm, for example, 0.2 μm, on an N-type semiconductor. Furthermore, 10-6 to 10-'t
The vacuum was sufficiently drawn to orr. Again, BgHa/Si
P-type semiconductor is 100 to 50 with l+<=0.1χ
0 people, for example, 200 people were formed.

Similarly, an I-type semiconductor layer (500-2000 layers) and an N-type semiconductor layer with an amorphous structure on top of it (50-50 layers)
NIPIN junction or N(1)T by stacking to a thickness of 0
Pl(1)N junction ((■) is a barrier layer ('thickness 5-50
(person), but will be omitted below for brevity).

Thereafter, chromium (500-1500 chromium) is applied to the upper surface by electron beam evaporation or sputtering to a density of 0.1-0.
It was laminated to a thickness of 2μ.

Furthermore, as shown in FIG. 2(B), anisotropic plasma etching was performed using the first photomask (2) so that the peripheral portion (26) was vertical. Next, for example, 20
A semiconductor was subjected to plasma oxidation at 0° C., and silicon oxide was produced by solid phase-vapor phase oxidation. Next, silicon nitride or silicon oxide (27) was coated (particularly on the side surfaces (26)) to a thickness of 0.1 to 0.2 μm by plasma CVD on the entire surface thereof.

Next, as shown in FIG. 2(C), this insulator is subjected to anisotropic plasma etching to form a semiconductor (2) and a first electrode (2).
The insulator (28) was left covering the side surface (26) of 1), and the other second electrode (15) and substrate (20) were removed. Thus, Figure 2(C) was obtained. That is, next this second E
Aluminum was formed on the entire upper surface of (C) to a thickness of 0.5 to 1 .mu.m to obtain Figures 2 (D-1) and (D-2). After this, as shown in FIG. 2(E), the first side surface (
26), patterning was carried out using the second mask (3) in the direction perpendicular to the pattern. In this way, the lead extending from the second electrode of one pixel extends onto the insulator provided on the side surface of the first electrode in the semiconductor constituting the pixel, and connects to the second electrode of the adjacent pixel. I was able to connect them.

Furthermore, an insulator (29) similar to (28) may be formed on this side surface after this.

Also, if you increase the number of masks, 1 in Figure 2 (C).
It is also possible to use a method in which the side surfaces and their vicinity are left using a normal plasma etching method using a solid mask. However, in such a case, the total number of masks used will be 3.

That is, in FIG. 2, a first electrode (21) made of a transparent conductive film on a glass substrate (20), and a composite diode (2) made of a NIPIN or NIN semiconductor laminate.

Chromium second electrode (15), aluminum (16)
It consists of an electrode lead (22) made of. This NI
The symbol for the PIN or NIN structure is shown in Figure 1 (2)
It is written as.

As a result, a nonlinear characteristic (31) as shown in FIG. 3 is obtained.

"Example 2" in which the configuration of (32) can be provided corresponding to that shown in FIG. 2 The configuration of the present invention is shown in FIG. (A) and vertical cross-sectional view (B)
, (C) and (D) are shown.

Furthermore, Fig. 4 (B), (C), and (D) are (A
), the longitudinal cross-sectional views at ^-A', BB', and CC' are shown, respectively. In addition, Figure 4(C) shows the liquid crystal (3), upper electrodes (6), (7) and substrate (20°).
is also shown, but the other (A) and (B).

In (D), only the side having the nonlinear element is shown for simplicity.

The manufacturing method of this element is the same as in Example 1.

That is, the rectangular first electrode (21) is formed by the first mask (2).
A third electrode (23) and a semiconductor having the same shape and a conductor forming part of the second electrode are formed thereon. The shape of the transparent conductive film constituting the first electrode and the second electrode was 420μ×420μ. Furthermore, these constitute a passivation film for insulating the side surfaces of the semiconductor and the lower first and second electrodes. Furthermore, lead material for the upper electrode is formed over the entire surface. next,
゛Leads (4), (5
) The aluminum of the electrode (16) and the second electrode (15) of the same width (here, 20 μm) was plasma etched using CCl4. The semiconductor (2) was removed by etching.

At this time, the first pixel electrode (22
), the electrode (22°) of the second pixel next to this, and the lead (25) between them (FIG. 4B) are made to have the same width, and are configured simultaneously to accommodate horizontal pattern deviation. Then, the semiconductor is removed from the open groove between the two semiconductors (2) and (2'), and the lead is replaced by an insulator (28) on the side of the semiconductor.
, (28°) and on the substrate (20).

In other words, the two semiconductors (2) and (2') are insulators (28)
, (28'), so
It was possible to eliminate the equivalent resistance, which does not easily cause crosstalk, by setting it to 10'Ω or more, which is substantially infinite.

Furthermore, since the second electrode is provided above the rectangular first and third electrodes, its position will not change even if it deviates up and down by ±200 μ (maximum) from its original position in the center. The electrode area of the linear element remains unchanged, and the electrical characteristics (current value)
It is possible to create patterns without affecting at all. That is, for example, a glass substrate (3
0 cm x 20 cm), the upper cloth edge and the lower edge of the mask caused a misalignment of the mask, and mask alignment became possible even with poor accuracy, such as a misalignment of 10 times that of the conventional method, for example, one side shifted by 200 μ to the + side and the other shifted by 200 μ to the other side.

In this way, by using the second mask (2), which performs one overlapping process, it was possible to form the composite diode (2) in approximately the same shape on the third electrode (15).

Furthermore, as is clear from FIG. 4(B), there is a The crosstalk-like resistance (33) is 1010Ω or more of the high resistance type (lead (25)) because the semiconductor is covered with an insulating film (26) at intervals of 15 μ without any remaining semiconductor. ) had a width of 20μ).

Furthermore, the other fourth electrode (24) of the opposing liquid crystal.

(24''), leads (6) and (7) were formed as wiring in the Y direction using the other first mask (2).

After this, for each of the wiring in the Y direction, a red filter is applied to the electrodes (6-1) and (7-1) by a known electrodeposition method, and a red filter is applied to the electrodes (6-2) and (7-2). A green filter was formed for (6-3) and (7-3), and a blue filter was formed for (6-3) and (7-3). Then polyimide such as PI
Q was coated to form a protective film, and this PI (1) was subjected to orientation treatment.

For this full coloring, a dyeing method may be used instead of the electrodeposition method. This method forms R, G, and H filters on a glass substrate, and then creates a passivation film.
In this film (6-1), (6-2), (6-3)
, (7-1)... were divided into three to form electrodes.

In this way, three electrodes could be provided corresponding to one lower electrode.

From the above, it is only necessary to use three types of masks to form one active picture element on this surface, and particularly in that case, it has the advantage that only two overlapping masks (one time) are required.

Furthermore, the other opposing insulating substrate (20°) is
After evacuating the gap by a width of μ, a known liquid crystal (10) was sealed.

As a display panel, a reflective plate is then provided for the reflective type, a light source is provided on the back side for the transmissive type, and the peripheral circuits (8) and (9) shown in Figure 1 are arranged on the printed circuit board. The leads of the display element and each lead of the display element were connected in correspondence with each other.

In this way, it has become possible to pattern an active element type panel using only three masks.

"Effects" As described above, the present invention eliminates crosstalk between a pixel made of a nonlinear element and a liquid crystal and an adjacent pixel, and also
The number of photomasks required to fabricate the substrate on the side with the active element is only two, and in addition, the electrode area of the nonlinear element (
Even if the current value when applying a predetermined voltage is up to ±200μ above and below the center of the rectangular electrode, it will also vary by several millimeters to the left and right.
It does not change even when shifted, has constant nonlinear characteristics, and can prevent variations in the electrical characteristics of active drive throughout the matrix.

It is an alternating current drive system, and has the characteristic that it is easy to control gradations, especially since the threshold value of the diode can be controlled by the process conditions during stacking of semiconductor layers using a gas phase reaction method.

In the present invention, the nonlinear element is an NIN junction or an NIP
It was an IN junction.

Furthermore, NIPIN, NIPI which sets up this in tandem
The threshold value may be increased as a NIPIN junction.

However, on the other hand, a diode ring with multiple PIN junctions in parallel, or a BACK-TO-BA with multiple PIN junctions in series.
The present invention is also effective for other nonlinear semiconductor devices having origin symmetric characteristics shown in FIG. 3 using the CK method, Zener characteristics, or avalanche characteristics.

In the present invention, if the nonlinear element is non-photosensitive,
It is possible to use only a light-transmitting conductive film as the first electrode and provide a semiconductor in close contact therewith. In addition, when the device is photosensitive and uses the dark state of the device, it is necessary to provide a light-shielding conductor, such as chromium, in the same shape as the semiconductor between the rectangular transparent conductive film and the semiconductor. Needless to say.

Of course, even if the nonlinear element has photosensitivity and its photosensitivity is utilized, the present invention may be applied according to the application.

[Brief explanation of the drawing]

FIG. 1 shows a circuit diagram of a liquid crystal display panel of the present invention. FIG. 2 is a vertical sectional view showing the manufacturing process of the composite diode of the present invention. FIG. 3 shows the operating characteristics of the nonlinear element of the composite diode of the present invention. FIG. 4 shows a plan view and a longitudinal sectional view of the display panel of the present invention.

Claims (2)

[Claims] 1. In a solid-state display device in which a plurality of active element type pixels are provided in a matrix on a substrate, a non-linear element is provided in which a first electrode, a semiconductor, and a second electrode are laminated; a third electrode of a liquid crystal display element connected to the electrode, and an insulator is provided between the first electrode and a lead extending from the second electrode around the side of the semiconductor. A first pixel and an adjacent second pixel having the same configuration as the pixel are arranged on the substrate at a predetermined distance, and a second electrode of each of the first and second pixels is arranged. A semiconductor device characterized in that the semiconductor device is electrically connected by more extended leads. 2. 2. A semiconductor device according to claim 1, wherein the second electrode of each of the first and second pixels and the semiconductor under the electrode have approximately the same shape.