JPS61112301A - Electrode material for voltage non-linear resistor - Google Patents
Electrode material for voltage non-linear resistorInfo
- Publication number
- JPS61112301A JPS61112301A JP59234354A JP23435484A JPS61112301A JP S61112301 A JPS61112301 A JP S61112301A JP 59234354 A JP59234354 A JP 59234354A JP 23435484 A JP23435484 A JP 23435484A JP S61112301 A JPS61112301 A JP S61112301A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- voltage
- electrode material
- parts
- varistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007772 electrode material Substances 0.000 title claims description 8
- 239000005388 borosilicate glass Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 claims description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Glass Compositions (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 産業上の利用分野 本発明は電圧非直線抵抗体に用いる電極材料に関する。[Detailed description of the invention] Industrial applications The present invention relates to an electrode material used in a voltage nonlinear resistor.
従来例の構成とその問題点
電圧非直線抵抗体〔以下、バリスタと称す〕は、サージ
吸収素子、電圧安定化素子、避雷器等に広(用いられて
いる。従来、これらの用途にはシリコンカーバイドバリ
スタやシリコン゛バリスタ等が供されてきた。しかしこ
れらのバリスタは、電圧非直線性係数αが小さく、特性
を任意に調整できない、あるいは形状が大きい等の欠点
を有しており、その用途はおのずから制限されていた。Conventional configurations and their problems Voltage nonlinear resistors (hereinafter referred to as varistors) are widely used in surge absorption elements, voltage stabilization elements, lightning arresters, etc. Conventionally, silicon carbide has been used for these applications. Varistors, silicon varistors, etc. have been provided. However, these varistors have drawbacks such as a small voltage nonlinearity coefficient α, the inability to adjust the characteristics arbitrarily, and a large shape. It was naturally restricted.
最近、これらの欠点を改善するものとして、酸化亜鉛(
ZnO)を主成分とし、これに数種の金属酸化物を微量
添加し、混合、成形、焼成した酸化物焼結体のバリスタ
が開発された。このバリスタは優れた電圧非直線係数を
有しているためにその用途は拡大されようとしているが
、高度に発達した通信機器の電気回路にはまだ不充分な
点が多い。Recently, zinc oxide (
An oxide sintered body varistor has been developed which is made of ZnO (ZnO) as the main component, to which trace amounts of several metal oxides are added, mixed, molded, and fired. This varistor has an excellent voltage nonlinearity coefficient, so its use is expanding, but there are still many deficiencies in the electrical circuits of highly developed communication equipment.
一般にバリスタの電圧非直線は次式で示す電圧非直線係
数αおよびViの値′で評価されている。Generally, the voltage nonlinearity of a varistor is evaluated by the values of the voltage nonlinearity coefficients α and Vi expressed by the following equations.
I/i = (V/Vi)α
・・・・・・■ここで■はバリスタに流れる電流、■
はその印加電圧、Viは一定電流iアンペアにおける電
圧で、通常立上り電圧と称されている。I/i = (V/Vi)α
...... ■Here, ■ is the current flowing through the varistor, ■
is the applied voltage, and Vi is the voltage at a constant current i ampere, which is usually called the rising voltage.
バリスタの電気特性を示す上でα、viは実用上重要な
定数である。αはバリスタを挿入した電気回路の電圧が
如何に制御されるかを示すものであり、αが大きい程そ
の電圧の立上りが優れており、αは特殊用途を除けば大
きい方が好ましく′″30″30″以上ましい。Viは
使用きれる電圧がいくらであるかによって定められるも
のであり、それぞれの製品によってあらかじめ指定され
た値に調整されるものである。α and vi are practically important constants in indicating the electrical characteristics of the varistor. α indicates how the voltage of the electric circuit in which the varistor is inserted is controlled, and the larger α is, the better the voltage rise is, and the larger α is preferable except for special applications. ``30'' or more is preferable. Vi is determined depending on the usable voltage, and is adjusted to a predetermined value depending on each product.
ところで通信機器の電気回路においてその使用条件を考
えれば、常時課電電圧に対する漏洩電流の増加が小さく
て制限電圧比特性〔一般には1mA流れた場合のバリス
タの端子間電圧V+mAと他の値の電流が流れた場合の
同一バリスタの端子間電圧の比で大電流領域における電
圧の非直線性を示したもの〕に優れたバリスタが必要と
なる。By the way, if we consider the conditions of use in the electrical circuit of communication equipment, the increase in leakage current with respect to the constantly applied voltage is small, and the limiting voltage ratio characteristic [generally, the voltage between the terminals of the varistor when 1 mA flows, V + mA, and the current of other values. A varistor with excellent voltage nonlinearity in a large current region is required.
しかしながら、電極材料中のガラスフリット成分として
Bi2O5を40〜90重量幅、B2O3を10〜30
重を憾、SiO2を5〜25重量憾重量酸る硼珪酸ビス
マスガラスを用いた従来の1!極材料をZnO系バリス
タに使用すると、課電寿命におけるバリスタ電圧の特性
劣化が大きく、かつ制限電圧比が満足すべきものでない
のが現状である。However, as the glass frit component in the electrode material, Bi2O5 has a weight range of 40 to 90%, and B2O3 has a weight range of 10 to 30%.
Conventional method 1 using bismuth borosilicate glass which is oxidized by 5 to 25 weight SiO2! When a pole material is used in a ZnO-based varistor, the current situation is that the characteristic deterioration of the varistor voltage during the life of energization is large and the limiting voltage ratio is not satisfactory.
発明の目的
本発明はZnO系バリスタの特性を改善できる電極材料
を提供することを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide an electrode material that can improve the characteristics of a ZnO-based varistor.
発明の構成
本発明の電圧非直線抵抗体用電極材料は、ZnOを主成
分とする電圧非直線抵抗体の電極材料のガラス成分とし
て、亜鉛をZnOの形で35〜70wt 4含む硼珪酸
亜鉛ガラス100重量部に対して、酸化ビス1フ40〜
90重量%、シリカ5〜25重量壬、無水ホウ酸10〜
30重量憾配合してなる硼珪酸ビスマスガラスを100
〜500重景部配合したガラスフリットを用いて、Zn
O系バリスタの特性を改善したことを特徴とする。Structure of the Invention The electrode material for a voltage non-linear resistor of the present invention is a zinc borosilicate glass containing 35 to 70 wt. 100 parts by weight of bis oxide 1 F40~
90% by weight, silica 5~25wt, boric anhydride 10~
100% bismuth borosilicate glass made by blending 30% by weight
Using a glass frit containing ~500 layers, Zn
It is characterized by improved characteristics of O-based varistors.
実施例の説明 以下、本発明の詳細な説明する。Description of examples The present invention will be explained in detail below.
先ず、ZnOを96モ/L’S、Bi2O,を0.6モ
Q、 、゛箋CoOを0.5モN 16 、M
nO2を0.9 モ/L/%、5b20.を0.9モ#
4、NiOを0.6モ)ve4、Cr2O5を0.5モ
ル憾秤量し、ボーフレミルで混合した。こうして得られ
た混合ヌヲリーを乾燥700〜950℃で仮焼この仮焼
を省略してもよい)し、バインダ(PVA S チ水溶
液)を加え、円板に加圧成形した。その後、1100〜
1300℃で焼成し、得られた焼結体(直径10fl)
を厚さ0.8 ynaに研摩した後、直径8餌の銀電極
を焼きつけた。First, ZnO is 96mol/L'S, Bi2O is 0.6molQ, CoO is 0.5molN16,M
nO2 at 0.9 mo/L/%, 5b20. 0.9Mo#
4. 0.6 moles of NiO)ve4 and 0.5 moles of Cr2O5 were weighed out and mixed in a Beaufre Mill. The thus obtained mixed mixture was dried and calcined at 700 to 950° C. (this calcination may be omitted), a binder (PVAS water solution) was added, and pressure molded into a disk. After that, 1100~
Sintered body obtained by firing at 1300°C (diameter 10fl)
After polishing to a thickness of 0.8 yna, a silver electrode with a diameter of 8 mm was baked.
ここで使用した銀電極は、硼珪酸亜鉛ガラス粉末〔下記
第1表は使用した硼珪酸亜鉛ガラスの組成比を示す〕1
00重量部に対して硼珪酸ビスマスガラス粉末〔下記第
2表は使用した硼珪酸ビスマスガラスの組成比を示す〕
を100〜500重量部配合してなるガラス粉末を所定
i(重量比で10係)NuL、ブチρカ〜ビトールにエ
チルセルローズを溶かしたビヒク/L/(重量比で30
憾)中にAg粉末(重量比で60係)とともに混練し、
ペースト状にしたものでめる。The silver electrode used here was a zinc borosilicate glass powder [Table 1 below shows the composition ratio of the zinc borosilicate glass used] 1
00 parts by weight of bismuth borosilicate glass powder [Table 2 below shows the composition ratio of the bismuth borosilicate glass used]
A glass powder prepared by blending 100 to 500 parts by weight of NuL with a predetermined ratio of 10 to 100 parts by weight, and a glass powder prepared by dissolving ethyl cellulose in Buti-rho-vitol/L/(30 parts by weight).
(regret) with Ag powder (60% by weight),
Make it into a paste.
以下余白
第 1 表
第 2 表
第3表はこのようにして得られた焼結体の電気特性を示
す。Tables 1, 2 and 3 below show the electrical properties of the sintered bodies thus obtained.
以下余白
第 3 表
この第3表は、1μA〜15Aまでの電圧電流特性を測
定した結果より算出したもので、電流が0.1 mAと
ImA間の非直線指数0.1α1.Q mA 、V+
mA/m 、電流値15AK > ケルV +5AとV
+mAC’比V+sA/V+fIIA(制限電圧比)お
よび課電寿命特性におけるV+oμ人の変化率△V/V
IQIJA(憾)で表わされる。Margin below Table 3 This third table was calculated from the results of measuring voltage-current characteristics from 1 μA to 15 A, and the non-linear index between 0.1 mA and ImA is 0.1α1. Q mA , V+
mA/m, current value 15AK > Kel V +5A and V
+mAC' ratio V+sA/V+fIIA (limiting voltage ratio) and rate of change of V+oμ in energized life characteristics △V/V
It is expressed as IQIJA (regret).
課電寿命特性は、80℃に保たれた恒温槽中でV+mA
の904の直流電圧を500時間印加した後、室温にも
どしV+oμA(直流電圧の印加方向と逆の方向のV+
oμA)を測定して変化率を算出し、これで特性評価を
行なった。The charging life characteristics are V+mA in a constant temperature oven kept at 80℃.
After applying the DC voltage of 904 for 500 hours, return to room temperature and V+oμA (V+
oμA) was measured to calculate the rate of change, and the characteristics were evaluated using this.
第3表に示され丸ごとく、硼珪酸亜鉛ガラスを含有して
いないサンプ/L’NO,26に比べて本発明のサンプ
ルNO,1〜25を使用したバリスタは課電寿命特性が
非常によくなると共に制限電圧特性も改善されており、
通信機器の電気回路用として用いるバリスタに要望され
る特性を満足するものである。As shown in Table 3, the varistors using samples No. 1 to 25 of the present invention have much better energized life characteristics than the sump/L'NO.26 that does not contain zinc borosilicate glass. At the same time, the limiting voltage characteristics have also been improved.
This satisfies the characteristics required for varistors used in electrical circuits of communication equipment.
ガラス成分の有効な配合量範囲は、亜鉛をZnQ
’の形で35〜70重量幅含む硼珪酸亜鉛ガラス100
重量部に対して酸化ビスマス(Bi203)40〜90
重量幅、シリカ(S +02) 5〜25重量%、無水
ホウ酸(B203) 10〜30重量’tr13a合し
てなる硼珪酸ビスマスガラス100〜500重量部であ
る。The effective blending range of glass components is
Zinc borosilicate glass containing 35-70 weight range in the form of '100
Bismuth oxide (Bi203) 40-90 parts by weight
The weight range is 100 to 500 parts by weight of bismuth borosilicate glass formed by combining 5 to 25 weight % of silica (S +02) and 10 to 30 weight % of boric anhydride (B203).
これらの配合量の範囲外になったシ、あるいは亜鉛の配
付量の異なる硼珪酸亜鉛ガラスを用いると、0.1α1
.OmAが30未満、 V 15A/V ImAが14
5以上、課電寿命におけるノクリスタ電圧の特性劣化が
大きくなる、のうちのいずれかにな9、通信機器の電気
回路用のバリスタとしては不適当になる。まだ、硼珪酸
ビスマスガラス中のBi2O3が40重量係未満ではガ
ラス化が困難になυ、90重量壬を超えた時は素子の電
圧非直線指数αが悪くなる。次にS+02が5重量係未
満では紫子の課電寿命が悪くなシ、25重量噛を超えた
時には放電耐量が悪くなる。さらに、B20.は10貞
祉憾未満では電圧非直線指数αが悪くなり、30重量壬
を超えた時には放電耐量が悪くなる。If glass outside these ranges or zinc borosilicate glass with a different zinc distribution amount is used, 0.1α1
.. OmA less than 30, V 15A/V ImA 14
If the varistor exceeds 5, the characteristic deterioration of the varistor voltage during the energized life becomes large; However, if the Bi2O3 content in the bismuth borosilicate glass is less than 40% by weight, vitrification becomes difficult, and if it exceeds 90% by weight, the voltage nonlinearity index α of the device deteriorates. Next, if S+02 is less than 5 weight ratios, the life of the violet will be poor, and if it exceeds 25 weight ratios, the discharge withstand capacity will be poor. Furthermore, B20. If it is less than 10%, the voltage nonlinearity index α will be poor, and if it exceeds 30%, the discharge withstand capacity will be poor.
発明の詳細
な説明のように本発明の電極材料を印刷、焼付けしてZ
nO系バリスクを構成すれば、小電流領域から大電流領
域にわたってすぐれた電圧非直線特性を示し、かつ通信
機器の電気回路にも適した非常に優れ九課電寿命特性の
バリスタが得られるものである。The electrode material of the present invention is printed and baked as described in the detailed description of the invention
By configuring an nO-based varistor, it is possible to obtain a varistor that exhibits excellent voltage non-linear characteristics from a small current region to a large current region, and has an extremely excellent current life characteristic suitable for electrical circuits of communication equipment. be.
Claims (1)
のガラス成分として、亜鉛をZnOの形で35〜70重
量%を含む硼珪酸亜鉛ガラス100重量部に対して、酸
化ビスマス40〜90重量%、シリカ5〜25重量%、
無水ホウ酸10〜30重量%配合してなる硼珪酸ビスマ
スガラスを100〜500重量部配合したガラスフリッ
トを用いた電圧非直線抵抗体用電極材料。1. As a glass component of the electrode material of a voltage non-linear resistor mainly composed of ZnO, 40 to 90 parts of bismuth oxide is added to 100 parts by weight of zinc borosilicate glass containing 35 to 70 parts by weight of zinc in the form of ZnO. % by weight, 5-25% by weight of silica,
An electrode material for a voltage nonlinear resistor using a glass frit containing 100 to 500 parts by weight of bismuth borosilicate glass containing 10 to 30 parts by weight of boric anhydride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59234354A JPS61112301A (en) | 1984-11-06 | 1984-11-06 | Electrode material for voltage non-linear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59234354A JPS61112301A (en) | 1984-11-06 | 1984-11-06 | Electrode material for voltage non-linear resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61112301A true JPS61112301A (en) | 1986-05-30 |
JPH0578924B2 JPH0578924B2 (en) | 1993-10-29 |
Family
ID=16969683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59234354A Granted JPS61112301A (en) | 1984-11-06 | 1984-11-06 | Electrode material for voltage non-linear resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61112301A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02306606A (en) * | 1989-05-22 | 1990-12-20 | Tdk Corp | Semiconductor porcelain electronic parts and conductive composition |
JPH04300226A (en) * | 1991-03-27 | 1992-10-23 | Taiyo Yuden Co Ltd | Glass composition for zinc oxide varistor and zinc oxide varistor |
EP0924714A1 (en) * | 1997-12-22 | 1999-06-23 | Kabushiki Kaisha Toshiba | Nonlinear resistor and manufacturing method of the same |
-
1984
- 1984-11-06 JP JP59234354A patent/JPS61112301A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02306606A (en) * | 1989-05-22 | 1990-12-20 | Tdk Corp | Semiconductor porcelain electronic parts and conductive composition |
JPH04300226A (en) * | 1991-03-27 | 1992-10-23 | Taiyo Yuden Co Ltd | Glass composition for zinc oxide varistor and zinc oxide varistor |
EP0924714A1 (en) * | 1997-12-22 | 1999-06-23 | Kabushiki Kaisha Toshiba | Nonlinear resistor and manufacturing method of the same |
US6163245A (en) * | 1997-12-22 | 2000-12-19 | Kabushiki Kaisha Toshiba | Nonlinear resistor with electrodes formed by plasma spraying |
Also Published As
Publication number | Publication date |
---|---|
JPH0578924B2 (en) | 1993-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0029749B1 (en) | Voltage dependent resistor and method of making same | |
JPS5928962B2 (en) | Manufacturing method of thick film varistor | |
US3903226A (en) | Method of making voltage-dependent resistors | |
US3760318A (en) | Process for making a voltage dependent resistor | |
US4374049A (en) | Zinc oxide varistor composition not containing silica | |
JPS61112301A (en) | Electrode material for voltage non-linear resistor | |
JPS6329802B2 (en) | ||
JPS5811084B2 (en) | Voltage nonlinear resistor | |
JPS62290104A (en) | Electrode material for voltage nonlinear resistance unit | |
JPS63117403A (en) | Electrode material for voltage nonlinear resistor | |
JPS62290105A (en) | Electrode material for voltage nonlinear resistance unit | |
JPS6329804B2 (en) | ||
JPS63117404A (en) | Electrode material for voltage nonlinear resistor | |
JPS626325B2 (en) | ||
JPH04139702A (en) | Voltage-dependent nonlinear resistor | |
US4594209A (en) | Process for the preparation of voltage non-linearity type resistors | |
JPS5853487B2 (en) | Voltage nonlinear resistor | |
JPS5853488B2 (en) | Voltage nonlinear resistor | |
JPS6329805B2 (en) | ||
JPH0519802B2 (en) | ||
JPH038765A (en) | Production of voltage-dependent nonlinear resistor porcelain composition and varistor | |
JPS6153160A (en) | Voltage depending non-linear resistor ceramic composition | |
KR910001109B1 (en) | Manufacturing method of high voltage zinc oxide varistor | |
JP3089370B2 (en) | Voltage non-linear resistance composition | |
JPS5994401A (en) | Method of producing voltage nonlinear resistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |