JPS61111996A - Rare earth garnet single crystal and method for producing the same - Google Patents
Rare earth garnet single crystal and method for producing the sameInfo
- Publication number
- JPS61111996A JPS61111996A JP59233345A JP23334584A JPS61111996A JP S61111996 A JPS61111996 A JP S61111996A JP 59233345 A JP59233345 A JP 59233345A JP 23334584 A JP23334584 A JP 23334584A JP S61111996 A JPS61111996 A JP S61111996A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- rare earth
- single crystal
- thermal conductivity
- garnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 239000002223 garnet Substances 0.000 title claims abstract description 22
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 15
- 150000002910 rare earth metals Chemical class 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 229910002614 GdAlO3 Inorganic materials 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000005057 refrigeration Methods 0.000 description 7
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気バブルメモリー、磁気冷凍作業物質、磁気
光学材料、レーザ素子材料などに使用される希土類ガー
ネット単結晶体及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a rare earth garnet single crystal used in magnetic bubble memories, magnetic refrigeration materials, magneto-optical materials, laser element materials, etc., and a method for producing the same.
従来の技術
従来、希土類ガーネット単結晶体としては、Ｙ、Ｆ’ｅ
、０．２、Ｙ、 Ａｔ、 Ｏ，！、Ｇｄ、Ｇａ、０．、
などが知られており、これらは磁気バブルメモリー、磁
気冷凍作業物質、磁気光学材料、レーザ素子材料として
広く用いられている。Conventional technology Conventionally, rare earth garnet single crystals include Y, F'e
, 0.2, Y, At, O,! , Gd, Ga, 0. ,
These materials are widely used as magnetic bubble memories, magnetic refrigeration materials, magneto-optical materials, and laser element materials.
これらの単結晶の性能と信頼性を向上させるために、結
晶中の転位、空孔等の欠陥が極めて少なく、用途に応じ
た性能を発揮できる新しいガーネット単結晶の開発が要
望されている。In order to improve the performance and reliability of these single crystals, there is a need for the development of new garnet single crystals that have extremely few defects such as dislocations and vacancies in the crystal and can exhibit performance appropriate to the intended use.
代表的なＧｄ、Ｇａ、０．２ガーネツトは、磁気パブル
メ％ ＩＪ−の基板材料として広く用いられている。ま
た最近では全く新しい原理に基づく磁気冷凍法に用いる
磁気冷凍作業物質として注目されている。Typical Gd, Ga, and 0.2 garnet are widely used as substrate materials for magnetic materials. Recently, it has also attracted attention as a magnetic refrigeration material used in magnetic refrigeration methods based on completely new principles.
磁気冷凍法は、一般に磁性体を強磁界中に挿入し、磁気
スピンを整列状態にすると発熱が起こる。この熱を外部
に取り去った後、逆に強磁界から磁性体を引出して磁気
スピンを擾乱状態にすると、吸熱が起こり、外部の冷凍
対象物から熱を奪い冷凍すると言う冷凍法である。In magnetic freezing, a magnetic material is generally inserted into a strong magnetic field and heat is generated when the magnetic spins are aligned. After this heat is removed to the outside, when the magnetic material is pulled out from a strong magnetic field and its magnetic spin is disturbed, heat absorption occurs, which takes heat from the external object to be frozen and freezes it.
これに使用する磁気冷凍作業物質としては、（１）磁気
モーメントが大きいこと、（２）熱伝導率が高いこと、
（３）磁気変態温度が低いことなどの特゛性が要求され
る。しかし、Ｇｄ３Ｇａ、Ｏ，□は熱伝導率が低い問題
点があった。The magnetic refrigeration material used for this purpose has (1) a large magnetic moment, (2) a high thermal conductivity,
(3) Characteristics such as a low magnetic transformation temperature are required. However, Gd3Ga, O, □ had a problem of low thermal conductivity.
本発明者らはこの問題点を解決するため研究の結果、さ
きにＱｄ、 Ｑａ、 ｏｌ！ガーネットのＧａの一部を
入りで置換した新しいガーネットであるＧｄｘ （Ｇａ
、−ｘＡｔ）ＯｓＯ＋ｚ（ただし、Ｘは０．０１≦Ｘ≦
０．６）の高い熱伝導率を有するガーネットを見出した
。（昭和５９年１０月１６日提出の特許願（イ））発明
の目的
本発明ガーネットは磁気モーメントが大きく、熱伝導率
の高い特性を有し、本発明者らが発明した前記Ｇｄ、
（Ｇａ、−ｘＡ４）□ｓＯ＋ｇ より転位、空孔などの
欠陥の少ない単結晶を提供し、磁気冷凍作業物質として
は勿論、磁気バブルメモリー用基板材料、レーザ素子材
料、磁気光学材料などとして広く利用し得られる新しい
ガーネット単結晶を提供するにある。As a result of research to solve this problem, the present inventors first developed Qd, Qa, ol! Gdx (Ga
, -xAt)OsO+z (where X is 0.01≦X≦
Garnet was found to have a high thermal conductivity of 0.6). (Patent Application (A) filed on October 16, 1982) Purpose of the Invention The garnet of the present invention has a large magnetic moment and a high thermal conductivity, and the above-mentioned Gd, which was invented by the present inventors,
(Ga, -xA4)□sO+g Provides a single crystal with fewer defects such as dislocations and vacancies, and is widely used as a magnetic refrigeration material, as well as substrate materials for magnetic bubble memories, laser element materials, magneto-optical materials, etc. The goal is to provide new garnet single crystals.
発明の構成
本発明者らはＧｄ３ （Ｇａ、−ｘＡｚｘ）ｓＯ＋ｚ（
ただし、Ｘは前記と同じものを表わす）ガーネットにつ
いて研究を重ねた結果、該単結晶では熱応力によって導
入された転位等の欠陥が残ることが分秒、（Ｇ ａ ＋
−Ｘ Ａｔｘ）の１部を希土類元素で置換す、Ｙｏ、
、 （ただし、Ｍは希土類元素の１種または２種以上の
組合せ、Ｘは０．０１≦Ｘ≦０．６、Ｙは０．０１≦Ｙ
≦０．３を表わす）で示される希土類ガーネット単結晶
体にある。Structure of the Invention The present inventors have prepared Gd3 (Ga, -xAzx)sO+z(
However, as a result of repeated research on garnet (X represents the same thing as above), it has been found that defects such as dislocations introduced by thermal stress remain in the single crystal (G a +
-X Atx) is partially replaced with a rare earth element, Yo,
(However, M is one kind or a combination of two or more rare earth elements, X is 0.01≦X≦0.6, and Y is 0.01≦Y.
≦0.3) is a rare earth garnet single crystal.
ＭとしてはＧｄ、 Ｐｒ、ＮｄＸＳｍＸＤｙ、 ＴｂＸ
Ｅｒ。M is Gd, Pr, NdXSmXDy, TbX
Er.
Ｈｏ、等が塁げられ、Ｇｄの場合は前記一般式をＧｄ、
＋Ｙ（、Ｏａ、−ｘＡｌｘ）、−ＹＯ，□として示すこ
とができる。これらの希土類元素は巣独で４、また２種
以上を組合せても使用することができる。Ho, etc. are expressed, and in the case of Gd, the above general formula is changed to Gd,
+Y(, Oa, -xAlx), -YO, □. These rare earth elements can be used singly or in combination of two or more.
Ｘの値は０．０１−０．６の範囲であることが必要であ
る。Ｘが０．０１より少ないと熱伝導率の向上に殆んど
効果を現わさない。Ｘが０．６を超えると、ガーネット
構造中にペロブスカイト構造のＧｄＡｔＯｓ相が晶出し
、熱伝導率を低下させる。The value of X needs to be in the range 0.01-0.6. If X is less than 0.01, there will be little effect on improving thermal conductivity. When X exceeds 0.6, a GdAtOs phase with a perovskite structure crystallizes in the garnet structure, reducing thermal conductivity.
Ｙは単結晶に生ずる転位、空孔などの欠陥の量や熱応力
によって発生するクラックと密接な関係を有する。、Ｙ
が００１よ抄少ないと、効果が少なく、０．３を超える
と転位、空孔などによる欠陥が急激に増加し、クラック
が発生するようになる。従ってＹは０．０１〜０．３の
範囲であることが必要である。Y has a close relationship with the amount of defects such as dislocations and vacancies that occur in a single crystal, and with cracks that occur due to thermal stress. ,Y
When the value is less than 001, the effect is small, and when it exceeds 0.3, defects due to dislocations, vacancies, etc. increase rapidly, and cracks begin to occur. Therefore, Y needs to be in the range of 0.01 to 0.3.
本発明の希土類ガーネット単結晶は、引上げ法（チョク
ラルスキー法）によって容易に製造し得られる。すなわ
ち、一般式Ｇｄ８Ｍｙ（Ｇａ、−８ＡｔＸ ）！−ＹＯ
１２（ただし、Ｍ、Ｙ、Ｘは前記と同じ本のを表わす）
の組成原料を加熱によって溶解し、これに種結晶を浸し
、０”−３％の酸素ガスを含む窒素ガス雰囲気中で＜１
１１＞結晶軸方向に引上げることによって得られる。し
かし、他の結晶育成法、例えば、ベルヌーイ法、プリジ
マン法、フローティングシー／法などでもよい。The rare earth garnet single crystal of the present invention can be easily produced by a pulling method (Czochralski method). That is, the general formula Gd8My(Ga, -8AtX)! -YO
12 (However, M, Y, and X represent the same books as above)
A raw material with a composition of
11> Obtained by pulling in the crystal axis direction. However, other crystal growth methods, such as the Bernoulli method, the Prigiman method, and the floating sea/method, may also be used.
中でも高品質な、大型結晶が容易に得られる点で引上げ
法が好ま【７い。Among these, the pulling method is preferred because high-quality, large-sized crystals can be easily obtained.
実施例１゜
直径約５ｐｍ、純度９９．９９ ％のＧｄ２Ｏ，Ｇａ２
Ｏ。Example 1 Gd2O, Ga2 with a diameter of about 5 pm and a purity of 99.99%
O.
及びｘｚ２ｎ、の粉末を、Ｇｄ ３ ＋ Ｙ （Ｇ ａ
６ｓ ＡＺｏ２） ｓ ＹＯ１２において、Ｙが０．
０，０１．０．０７．０．１２．０．１７０．２２．０
．３０．０．３５になるように配合したもの４２０２を
それぞれ混練し、プレス後１２５０℃で焼成して８種類
のガーネットペレットを作った。and xz2n, Gd 3 + Y (G a
6s AZo2) s YO12, Y is 0.
0,01.0.07.0.12.0.170.22.0
．． 30.0.35 was mixed and kneaded, pressed and then fired at 1250° C. to make eight types of garnet pellets.
各試料をイリジウムるつぼ（直径５０ｗｍφ、高さ５０
ＩＩＩＩＩ）中で高周波誘導加熱によって溶解ｌ１、こ
れに種結晶を浸し、０〜３チの酸素ガスを含む窒素ガス
雰囲気中で＜１１１＞結晶軸方向に引上げて、直径約２
８薗φ、長さ約５０鴫のガーネット単結晶を育成した。Place each sample in an iridium crucible (diameter 50wmφ, height 50mm).
A seed crystal is immersed in this by high-frequency induction heating in III), and pulled up in the direction of the <111> crystal axis in a nitrogen gas atmosphere containing 0 to 3 g of oxygen gas to give a diameter of about 2
A garnet single crystal with a diameter of 8 mm and a length of approximately 50 mm was grown.
その結果、ＹがＯでは熱応力によって導入された転位に
よる欠陥が多く観１察された。Ｙが０．３５では転位、
空孔などによる欠陥密度が高く、多数のクラックが発生
した。しかし、Ｙが００１〜０．３０では転位が極めて
少なく、透明で良質な単結晶が得られた。その熱伝導率
は５０〜８０Ｗ／６ｎＫＸ＠９４モーメントけＧｄ １
原子肖り７．９〜８．０石
町であった。As a result, when Y was O, many defects due to dislocations introduced by thermal stress were observed. When Y is 0.35, dislocation,
The defect density due to vacancies was high, and many cracks occurred. However, when Y was 001 to 0.30, there were very few dislocations, and a transparent and high-quality single crystal was obtained. Its thermal conductivity is 50~80W/6nKX@94 moment Gd 1
His atomic profile was 7.9 to 8.0 stones.
実施例２゜
実施例１と同じ原料及び方法によって、Ｙが０．１７の
Ｇｄ、、、 （Ｇａ、−、Ａｚｘ）、、３０．、におい
て、Ｘが０．０１．０．１，０．３．０，４．０．５．
０．６、Ｏ１７の７種類のガーネット単結晶を育成した
。Example 2 Using the same raw materials and method as in Example 1, Gd with Y of 0.17, (Ga, -, Azx), 30. , where X is 0.01.0.1, 0.3.0, 4.0.5.
Seven types of garnet single crystals of 0.6 and O17 were grown.
その結果、Ｘが０．０１〜０．６の範囲では転位が極め
て少なく、透明で良質な単結晶が得られた。As a result, when X was in the range of 0.01 to 0.6, there were extremely few dislocations, and a transparent and high-quality single crystal was obtained.
その熱伝導率及び磁気モーメントは実施例１と同様であ
った。Ｘが０７ではガーネット構造中にペロプスカイト
構造のＧｄＡ／、０．相が晶出し、多数のクラックが発
生した。Its thermal conductivity and magnetic moment were similar to Example 1. When X is 07, GdA/, which has a perovskite structure in the garnet structure, is 0. Phases crystallized and many cracks occurred.
実施例３゜
実施例１の原料及びこれと同程度の粒度、純度を持つＮ
ｄ、Ｏ，、ＤＹ、Ｏ，、Ｂｒ、Ｏ，の粉末を用いて、実
施例１と同じ方法によって、Ｙが０．１７のＧｄ、ＭＯ
，１，（Ｇａａｙ入ｔｌＬｍ ）４．１＋１０Ｈにおい
て、ＭがＮｄ。Example 3゜N having the same particle size and purity as the raw material of Example 1
Using powders of d, O,, DY, O,, Br, O, Gd and MO with Y of 0.17 were prepared by the same method as in Example 1.
, 1, (Gaay included tlLm) 4.1+10H, M is Nd.
ＤｙＸｇｒ、Ｎｄｏ、５ＤＹｏ、ｍである４種類のガー
ネット単結晶を育成した。Four types of garnet single crystals were grown: DyXgr, Ndo, 5DYo, and m.
その結果、いずれ本転位が極めて少なく、良質な単結晶
が得られた。その熱伝導率及び磁気モーメントは実施例
１のものと同様であった。As a result, a high-quality single crystal with extremely few main dislocations was obtained. Its thermal conductivity and magnetic moment were similar to those of Example 1.
発明の効果
本発明の希土類ガーネット単結晶体は、磁気モーメント
が大きく、熱伝導率が高い優れだ特 。Effects of the Invention The rare earth garnet single crystal of the present invention has excellent characteristics such as a large magnetic moment and high thermal conductivity.
性を有（７１、しかも転位、空孔などの欠陥が極めで少
ない良質な大盤単結晶である。従って、磁気冷凍作業物
質、磁気バブルメモリー用基板材料、レーザ素子材料、
磁気光学材料などとして優れた性能と信頼性を有するも
のである。ｔわ、 しかも従来の製造装置及び
技術がそのまま利用し得られる利点を有する。It is a high-quality large single crystal with extremely low defects such as dislocations and vacancies. Therefore, it can be used as a magnetic refrigeration material, a substrate material for magnetic bubble memory, a laser element material,
It has excellent performance and reliability as a magneto-optical material. Moreover, it has the advantage that conventional manufacturing equipment and techniques can be used as is.
特許出願人 科学技術庁金属材料技術研究所長中 川
龍 −Patent applicant: Ryu Kawa, Director, Research Institute for Metals, Science and Technology Agency −
Claims (1)
）＿５＿−＿ＹＯ＿１＿２（ただし、Ｍは希土類元素の
１種または２種以上の組合せ、Ｘは０．０１≦Ｘ≦０．
６、Ｙは０．０１≦Ｙ≦０．３を表わす。）で示される
希土類ガーネット単結晶体。 ２）一般式Ｇｄ＿３Ｍ＿Ｙ（Ｇａ＿１＿−＿ｘＡｌ＿ｘ
）＿５＿−＿ＹＯ＿１＿２（ただし、Ｍは希土類元素の
１種または２種以上の組合せ、Ｘは０．０１≦Ｘ≦０．
６、Ｙは０．０１≦Ｙ≦０．３を表わす）の組成原料混
合物を加熱によって溶解し、これに種結晶を浸し、窒素
ガス雰囲気中で引上げて結晶を育成することを特徴とす
る希土類ガーネット単結晶体の製造方法。[Claims] 1) General formula Gd_3M_Y(Ga_1_-_xAl_x
)_5_-_YO_1_2 (However, M is one kind or a combination of two or more kinds of rare earth elements, and X is 0.01≦X≦0.
6, Y represents 0.01≦Y≦0.3. ) rare earth garnet single crystal. 2) General formula Gd_3M_Y(Ga_1_-_xAl_x
)_5_-_YO_1_2 (However, M is one kind or a combination of two or more kinds of rare earth elements, and X is 0.01≦X≦0.
6, Y represents 0.01≦Y≦0.3) A rare earth material characterized by dissolving a raw material mixture by heating, immersing a seed crystal in this, and growing the crystal by pulling it up in a nitrogen gas atmosphere. Method for producing garnet single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59233345A JPS61111996A (en) | 1984-11-07 | 1984-11-07 | Rare earth garnet single crystal and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59233345A JPS61111996A (en) | 1984-11-07 | 1984-11-07 | Rare earth garnet single crystal and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61111996A true JPS61111996A (en) | 1986-05-30 |
| JPH034518B2 JPH034518B2 (en) | 1991-01-23 |
Family
ID=16953689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59233345A Granted JPS61111996A (en) | 1984-11-07 | 1984-11-07 | Rare earth garnet single crystal and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111996A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128921A (en) * | 1985-11-26 | 1987-06-11 | Takakuni Hashimoto | Magnetic material |
| JPS6481380A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPS6481378A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPS6481379A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPS6481377A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPH01152605A (en) * | 1987-12-09 | 1989-06-15 | Shin Etsu Chem Co Ltd | Oxide garnet single crystal |
-
1984
- 1984-11-07 JP JP59233345A patent/JPS61111996A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128921A (en) * | 1985-11-26 | 1987-06-11 | Takakuni Hashimoto | Magnetic material |
| JPH0313171B2 (en) * | 1985-11-26 | 1991-02-21 | Gishu Hashimoto | |
| JPS6481380A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPS6481378A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPS6481379A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPS6481377A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Crystal for solid state laser |
| JPH01152605A (en) * | 1987-12-09 | 1989-06-15 | Shin Etsu Chem Co Ltd | Oxide garnet single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH034518B2 (en) | 1991-01-23 |
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