JPS61111789A - Joining method for metal parts - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Detailed Description of the Invention [Field of Application of the Invention] The present invention is directed to diffusion bonding by forming a metal film with a melting point lower than that of the base material on the joint surfaces of joining members of A/ and its alloys, or Cu and its alloys. Regarding how to.

[Background of the invention]

In welding At and its alloys or Cu and its alloys, At
Welding of At and Cu or Cu and Cu is conventional fusion welding,
That is, although arc welding is possible, blowholes and poor fusion occur, resulting in quality problems. Therefore, kt and Cu are bonded by either brazing or diffusion bonding. The diffusion bonding method is described in, for example, Japanese Patent Laid-Open No. 109157/1983.

In the brazing method, brazing is performed at a temperature of 470 to 490 C, and the degree of dependence on the brazing material is large, and the joint may be worse than the materials to be joined. In addition, the above-mentioned Unexamined Patent Publication No. 56-1
In Japanese Patent No. 09157, one side of the bonding material is plated with Ni to form a structure.

On the other hand, the general diffusion bonding method does not use inserters and
At a bonding temperature of 80 to 545C, the bonding pressure is 0.59/cm2 to 1. It is bonded as OKp/■2. but,
There may be problems such as the formation of intermetallic compounds on the joint surfaces, reducing mechanical strength.

There are two types of diffusion bonding methods: in-phase diffusion bonding and liquid phase diffusion bonding. In-phase diffusion bonding requires the materials to be joined to face each other without inserting an insert material, to be in close contact with each other, and to apply high pressure. Therefore, deformation tends to occur when joining precision parts, etc., and its application is limited. On the other hand, in liquid phase diffusion bonding, foil or powder is inserted between the parts to be joined, and the bonding is done through that. When joining kt and At, At-8i foil or powder is inserted. However, when joining complex-shaped and precision parts, it is difficult to insert the insert material uniformly. Also, the deformation of the base material is relatively large.

[Purpose of the invention]

The purpose of the present invention is to reduce the deformation of the base material compared to the method of inserting ht-s i alloy, and to
, it is an object of the present invention to provide a bonding method capable of simultaneously bonding Cu and Cu, and furthermore, Cu and At.

[Summary of the invention]

In the present invention, after cleaning the bonding surfaces of At or Cu base materials to be bonded by Ar ion beam treatment, A/ and Qe'6, for example, are sputter-deposited on one or both of the bonding surfaces.
/, is characterized by diffusion bonding by heating above the eutectic temperature of Ge and below the melting temperature of the base material.

By providing a sputtered film of 52% At-48% Ge on the joining surfaces of the members to be joined, it is possible to compensate for the drawbacks of the conventional liquid-phase diffusion joining method, which is performed by inserting foil or powder. That is, the sputter-deposited film can form a uniform film on any complex-shaped component, and can provide good bonding. In addition, since the sputter-deposited film undergoes a eutectic reaction and melts at approximately 450C, it can be easily joined at a temperature significantly lower than that of A/, which is the material to be joined, and manufactured Cu, so there is no concern about material deterioration of the material to be joined. There's no need to. Naturally, the deformation of the base material is also reduced.

Conventionally, in the lap joining of A4, CLI, and Cu, AA and Cu are first solid-phase joined, and then Cu and Cu are joined together in a solid state.
A method was adopted in which the two were joined via an At-5t insert material. This is because conventional bonding methods suitable for A/= and Cu cannot bond Cu to Cu. Cu and Cu
This is because insert materials suitable for bonding A/ and Cu cannot be bonded together. Although these connections can be made by brazing, there is a problem in that in complex-shaped composites with precision cooling holes, the brazing material melts and blocks the cooling holes.

The bonding pressure of the present invention can be freely selected within the range of 0.4 Kf/1 m 2 or less depending on the shape and dimensions of the composite, and has the advantage that high pressure is not required as in the conventional method.

The appropriate thickness of the sputter-deposited film is 0.01 to 10 μm; if it is thicker than this, the dependence on the film increases, which not only causes problems in terms of strength, but also makes it difficult for composites with precision cooling holes as described above. There is a problem in manufacturing such as blocking the cooling holes. Furthermore, cleaning with an Ar ion beam before sputter deposition makes the adhesion of the sputter deposited film extremely good, so there is no fear that the sputter film will peel off before bonding. Furthermore, since this removes oxides from the surfaces to be joined of the materials to be joined, impurity gases (oxygen, oxygen,
The effect of nitrogen) can also be ignored.

[Implementation sequence of the invention]

Examples of the present invention will be described below. FIG. 1 shows a method of fabricating a composite according to the invention by diffusion bonding. At
2. At-Ge was applied to the bonding surface of Cul, and bonding was performed under the bonding conditions shown in Table 1. Before forming a film by sputter deposition, Ar ion beam treatment (600 W, time: 0.5 hr) and cleaning treatment were performed. As a result, as shown in FIG. 2, it was revealed that a significantly good bonding rate was exhibited. In addition, in FIG. 2, the conventional method of bonding Cu and kt using a kl-8i insert is shown by a dotted line.

Table 1 [Effects of the Invention] In the embodiment of the present invention, after the bonding surface of the material to be bonded (At or Cu) is purified by Ar ion beam treatment, the bonding film (At or Cu) with a thickness of 0.01 to 10 μm is applied to -Ge)t”
According to the method of bonding At and A/, At and Ct+ at the same temperature, high efficiency and high quality bonded parts can be obtained. Although it was difficult to fabricate a structure with precision cooling holes using conventional bonding methods, it is possible with the method of the present invention.

In the conventional method, At and A4 are joined at a temperature of around 600C using an HT-ST insert material, and Cu and A/1.
Solid phase bonding was performed at about 550C.

However, in the present invention, since bonding can be performed at a temperature of around 5,000 ℃, the temperature can be significantly lowered than in the conventional method, and furthermore, there is an effect that deterioration of the material can be prevented.

Furthermore, since the Ar ion beam treatment is performed before forming the bonding film, the adhesion between the bonded materials and the bonding film is extremely good, and there are also effects such as facilitating the movement of atoms during bonding.

The bonding width can be made significantly narrower than in conventional methods, the effect of the bonding layer is small, and the properties after bonding can be made comparable to those of the materials to be bonded.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of the method of the present invention, and FIGS. 2A and 2B are characteristic diagrams showing the relationship between bonding ratio and bonding temperature. 1...Cu, 2...kt, 3...insert material,
5...A L-G e sputter deposited film.

Claims (1)

[Claims] 1. In non-melting joining of aluminum or copper base materials,
A method for joining metal members, which uses an insert material made of aluminum and germanium and heats the insert material to a temperature above the temperature at which the eutectic reaction occurs and below the melting temperature of the base material. 2. A method for joining metal members according to claim 1, wherein the insert material is composed of two layers: an aluminum layer and a germanium layer. 3. A method for joining metal members according to claim 1, characterized in that aluminum and germanium are sputter-deposited on the joining surface of the base material. 4. The method of joining metal members according to claim 1, wherein the insert material has a composition of 52% aluminum and 48% germanium. 5. The method of joining metal members according to claim 1, wherein the insert material is made of an aluminum-germanium alloy. 6. The method of joining metal members according to claim 1, wherein the base material is aluminum. 7. The method of joining metal members according to claim 1, wherein the base material is copper. 8. A method for joining metal members according to claim 1, wherein the base materials are aluminum and copper. 9. The method of joining metal members according to claim 1, characterized in that the base materials are stacked in three or more layers, and the insert material is inserted between each layer to join them at once.