JPS6088568U - Infrared detection solid-state image sensor - Google Patents
Infrared detection solid-state image sensorInfo
- Publication number
- JPS6088568U JPS6088568U JP18035083U JP18035083U JPS6088568U JP S6088568 U JPS6088568 U JP S6088568U JP 18035083 U JP18035083 U JP 18035083U JP 18035083 U JP18035083 U JP 18035083U JP S6088568 U JPS6088568 U JP S6088568U
- Authority
- JP
- Japan
- Prior art keywords
- transfer gate
- transfer
- adjacent
- electrode
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims 2
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａは従来の赤外ＣＣＤの画素構成を示す平面図、
第１図すは従来の可視光用ＣＣＤの構成を適用した画素
構成を示す平面図、第２図は本考案の実施例を示す素子
全体構成図、第３図は本考案の実施例の画素を示す平面
図であり、第４図ａ及びｂはそれぞれ第３図に示した矢
印Ａ及びＢにおける断面の一部を示した図である。
図において、１．１１．３１はショットキーダイオード
、２，１２，２３はＣＣＤレジスター、３．１３．２２
はトランスファーゲート領域、４、 １４．４２．４３
．４６．４７．４８．４９は転送電極、５は配線、６，
２７．５３はトランスファーゲート電極、７は配線と転
送電極との接続部、２１は光電変換部、２４は出力回路
、２５、ｊｅはトランスファーゲート電極のゲート端子
、３２は半導体基板、３３は結合領域、３４はチャンネ
ルストッパー、３５は半導体基板と同じ導電型の高不純
物濃度領域、３６は厚い酸化膜、３７．３８はそれぞれ
Ｉ−Ｉ行目及びＩ十Ｉ行目、Ｊ列目のショットキーダイ
オード、３９．４０は境界部、４１はＣＣＤレジスター
の埋め込みチャンネル、４４．４５，５０．５１は転送
電極の延長部、５２はトランスファーゲート領域の表面
チャンネル、５３はトランスファーゲート電極であり、
５４はトランスファーゲート電極の延長部である。Figure 1a is a plan view showing the pixel configuration of a conventional infrared CCD;
Figure 1 is a plan view showing a pixel configuration to which the configuration of a conventional visible light CCD is applied, Figure 2 is an overall configuration diagram of an element showing an embodiment of the present invention, and Figure 3 is a pixel configuration of an embodiment of the present invention. FIG. 4A and FIG. 4B are views showing a part of the cross section taken along arrows A and B shown in FIG. 3, respectively. In the figure, 1.11.31 is a Schottky diode, 2, 12, and 23 are CCD registers, and 3.13.22
is the transfer gate region, 4, 14.42.43
．． 46, 47, 48, 49 are transfer electrodes, 5 is wiring, 6,
27. 53 is a transfer gate electrode, 7 is a connection between the wiring and the transfer electrode, 21 is a photoelectric conversion section, 24 is an output circuit, 25 and je are gate terminals of the transfer gate electrode, 32 is a semiconductor substrate, and 33 is a coupling region , 34 is a channel stopper, 35 is a high impurity concentration region of the same conductivity type as the semiconductor substrate, 36 is a thick oxide film, and 37 and 38 are Schottky diodes in the I-I row, IxI row, and J column, respectively. , 39.40 is the boundary part, 41 is the buried channel of the CCD register, 44.45, 50.51 is the extension part of the transfer electrode, 52 is the surface channel of the transfer gate region, 53 is the transfer gate electrode,
54 is an extension of the transfer gate electrode.
Claims (1)
して配設された光電変換部と、これに隣接して配置した
トランスファーゲート領域と、該トランスファーゲート
領域に隣接して設けられた列方向の電荷結合シフトレジ
スターと、該電荷結合レジスターにより転送された信号
電荷を外部へ取り出す出力回路とを有し、前記光電変換
部は、ショットキーダイオード、及び該ショットキーダ
イオードと前記トランスファゲート領域との間に、前記
半導体基板と反対の導電型で高不純物濃度として前記シ
ョットキーダイオードの電極に電気的に接続するように
配置された結合領域からなり、該結合領域の近傍を除い
て前記ショットキーダイオードを囲み、かつ隣接する行
のショットキーダイオードとの境界部分では互いに共有
するようにフィールドストップが設けられ、前記電荷結
合シフトレジスターは前記半導体基板と反対の導電型を
有する埋め込みチャンネルと該埋め込みチャンネルをお
おう複数の転送電極からなり、前記複数の転送電極は互
いに隣接する２つの転送電極を一組として一つの前記光
電変換部に対応するように配置され、かつそれぞれの転
送電極は直近の前記境界部分のフィールドストップ上に
設けられた延長部を介して隣接する列の同じ行の対応す
る転送電極と一体化されており、また、前記トランスフ
ァーゲート領域は前記半導体基板と同一の導電型の表面
チャンネル及び該表面チャンネルをおおうトランスファ
ゲート電極からなり、該トランスファーゲート電極は前
記境界部分のフィールドストップ上に設けられた前記転
送電極の延長部の上に更に電気的に絶縁して配置された
トランスファーゲート電極延長部を有し、隣接する行に
設けられたトランスファーゲート電極とは電気的に絶縁
されながら、同じ行の隣接する列のトランスファーゲー
ト電極同士は前記トランスファーゲート電極延長部を介
して一体化されていることを特徴とする赤外線検出撮像
素子。On a semiconductor substrate having one conductivity type, photoelectric conversion sections are arranged separately from each other in a matrix, a transfer gate region is arranged adjacent to the photoelectric conversion sections, and a column is arranged adjacent to the transfer gate region. The photoelectric conversion section includes a charge-coupled shift register in a direction, and an output circuit for extracting the signal charge transferred by the charge-coupled register to the outside, and the photoelectric conversion section includes a Schottky diode, and a Schottky diode and the transfer gate region. a coupling region having a conductivity type opposite to that of the semiconductor substrate and having a high impurity concentration and arranged so as to be electrically connected to the electrode of the Schottky diode, and excluding the vicinity of the coupling region, the Schottky diode A field stop is provided surrounding the diode and shared with the Schottky diodes in the adjacent row, and the charge-coupled shift register includes a buried channel having a conductivity type opposite to that of the semiconductor substrate and the buried channel. The plurality of transfer electrodes are arranged so as to correspond to one photoelectric conversion unit, with two transfer electrodes adjacent to each other forming a set, and each transfer electrode covers the nearest boundary. The transfer gate region is integrated with the corresponding transfer electrode of the same row of the adjacent column through an extension provided on the field stop of the part, and the transfer gate region is integrated with a surface channel of the same conductivity type as the semiconductor substrate. and a transfer gate electrode overlying the surface channel, the transfer gate electrode being further electrically insulated and disposed over an extension of the transfer electrode provided on the field stop of the boundary portion. The transfer gate electrode has an extension part, and is electrically insulated from transfer gate electrodes provided in adjacent rows, while transfer gate electrodes in adjacent columns in the same row are integrated with each other via the transfer gate electrode extension part. An infrared detection image sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18035083U JPS6088568U (en) | 1983-11-22 | 1983-11-22 | Infrared detection solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18035083U JPS6088568U (en) | 1983-11-22 | 1983-11-22 | Infrared detection solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6088568U true JPS6088568U (en) | 1985-06-18 |
Family
ID=30391066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18035083U Pending JPS6088568U (en) | 1983-11-22 | 1983-11-22 | Infrared detection solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6088568U (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123823A (en) * | 1976-04-10 | 1977-10-18 | Sony Corp | Solid pickup element |
| JPS52137210A (en) * | 1976-05-12 | 1977-11-16 | Matsushita Electric Ind Co Ltd | Solid taking image device |
| JPS5475927A (en) * | 1977-11-30 | 1979-06-18 | Toshiba Corp | Area sensor |
| JPS5518064A (en) * | 1978-07-26 | 1980-02-07 | Sony Corp | Charge trsnsfer device |
| JPS57132482A (en) * | 1981-02-09 | 1982-08-16 | Toshiba Corp | Charge transfer type image sensor |
| JPS58171849A (en) * | 1982-03-31 | 1983-10-08 | Fujitsu Ltd | solid state imaging device |
-
1983
- 1983-11-22 JP JP18035083U patent/JPS6088568U/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123823A (en) * | 1976-04-10 | 1977-10-18 | Sony Corp | Solid pickup element |
| JPS52137210A (en) * | 1976-05-12 | 1977-11-16 | Matsushita Electric Ind Co Ltd | Solid taking image device |
| JPS5475927A (en) * | 1977-11-30 | 1979-06-18 | Toshiba Corp | Area sensor |
| JPS5518064A (en) * | 1978-07-26 | 1980-02-07 | Sony Corp | Charge trsnsfer device |
| JPS57132482A (en) * | 1981-02-09 | 1982-08-16 | Toshiba Corp | Charge transfer type image sensor |
| JPS58171849A (en) * | 1982-03-31 | 1983-10-08 | Fujitsu Ltd | solid state imaging device |
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