JPS6079806A - Electronic tuning type fm modulator - Google Patents
Electronic tuning type fm modulatorInfo
- Publication number
- JPS6079806A JPS6079806A JP18763383A JP18763383A JPS6079806A JP S6079806 A JPS6079806 A JP S6079806A JP 18763383 A JP18763383 A JP 18763383A JP 18763383 A JP18763383 A JP 18763383A JP S6079806 A JPS6079806 A JP S6079806A
- Authority
- JP
- Japan
- Prior art keywords
- resonator
- modulation
- board
- sub
- modulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/141—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C7/00—Modulating electromagnetic waves
- H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
- H03C7/025—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices
- H03C7/027—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices using diodes
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【発明の詳細な説明】
(1)発明の技術分野
本発明は特性の良いFM変調を与えることのできる主共
振器・副共振器使用の電子同調型FM変調器に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to an electronically tuned FM modulator using a main resonator and a sub-resonator that can provide FM modulation with good characteristics.
(2)従来技術と問題点
主共振器とそれに結合する副共振器を使用した電子量j
litl型FM変調器は、従来例を第1図に示す構成と
していた。第1基板SBIには発振部を設げ、主共振器
MR3(例えば誘電体共振器)を載置したマイクロスト
リップ線路MSLの一端にガンダイオードGUNDを接
続し、ダイオードGUNDの出力は線路MS、Lの他端
に設&jられた筺体C3の窓WDを介して外部へ供給さ
れる。副共振器SR3を形成する第2基板SB2にはバ
ラクタダイオードVRDと共振用線路RLを設け、動作
バイアス用直流接続線DCLを接続しておく。主共振器
MR3の共振周波数をfo、副共振器SR8の共振周波
数をfl としたとき、ガンダイオードGUND発振器
の出力をFM変調するとき、変調の直線性及び位相特性
についてばfl の調節と二側共振器間の結合度の調節
により、最適状態に調節できる。このとき両共振器の結
合度を調節するためには、両者の距離を変えたり、副共
振器に対する向きを変えたりしていた。副共振器は前述
の構成となっているから実際上、調節可能とするには複
雑化し、調節に手間を要し、信頼性が高くない欠点があ
った。(2) Conventional technology and problems The amount of electrons j using a main resonator and a sub-resonator coupled to it
A conventional litl type FM modulator has a configuration shown in FIG. An oscillation section is provided on the first substrate SBI, and a Gunn diode GUND is connected to one end of the microstrip line MSL on which the main resonator MR3 (for example, a dielectric resonator) is mounted, and the output of the diode GUND is connected to the lines MS, L It is supplied to the outside through a window WD of the casing C3 provided at the other end. A varactor diode VRD and a resonance line RL are provided on the second substrate SB2 forming the sub-resonator SR3, and an operating bias DC connection line DCL is connected thereto. When the resonant frequency of the main resonator MR3 is fo and the resonant frequency of the sub-resonator SR8 is fl, when the output of the Gunn diode GUND oscillator is FM modulated, the linearity and phase characteristics of the modulation are as follows: adjustment of fl and two sides. The optimum state can be achieved by adjusting the degree of coupling between the resonators. At this time, in order to adjust the degree of coupling between both resonators, the distance between them has to be changed or the direction with respect to the sub-resonator has to be changed. Since the sub-resonator has the above-mentioned configuration, it is actually complicated to make it adjustable, takes time and effort to adjust, and has disadvantages in that it is not highly reliable.
(3)発明の目的
本発明の目的しJ前述の欠点を改善し、特性良くF M
変調を1−1えることのできる主共振器、副共振器の電
子同調型FM変調器を提供することにある。(3) Purpose of the Invention The purpose of the present invention is to improve the above-mentioned drawbacks and to improve the characteristics of FM.
It is an object of the present invention to provide an electronically tuned FM modulator having a main resonator and a sub-resonator that can increase modulation by 1-1.
(イ)発明の構成
前述の目的を達成するための本発明の構成は、主共振器
で定まる発振周波数出力をマイクロストリップ線路によ
り取出す途中に、副共振器を使用して周波数変JIMを
与える電子同調型FM変調器において、主共振器・副共
振器の両者に電磁的に結合jろ位ib°にマイクロスト
リップ形ダイポールを含む、!1(板を配設したことで
ある。(B) Structure of the Invention The structure of the present invention to achieve the above-mentioned object is to provide an electronic circuit that uses a sub-resonator to change the frequency while taking out the oscillation frequency output determined by the main resonator through a microstrip line. In a tunable FM modulator, a microstrip dipole is electromagnetically coupled to both the main resonator and the sub-resonator at position ib°. 1 (The board was installed.
(5)発明の実施例
第2図は本発明の一実施例を第1図と対応して示す構成
図で、第1図と同一符号は同様のものを示している。第
2図において、SB3は第3基板を示し、マイクロスト
リップ型ダイポールMDPを載置して、第1基板SBI
と第2基板SB2の中間に在る。そのため主共振器、副
共振器の両者に電磁的に結合する位置に在り、第2基板
SB2に沿って第2図の左右にSB3の位置を変えるこ
とにより、共振器間の結合度を調節できる。したがって
、バラクタダイオードVRDに対する直流印加の電圧に
対する周波数可変量で表される変HIM感度は第3基板
SB3の位置を可変することによって微細に調節ができ
る。例えばfo が26 G Ilz、変調感度0.5
〜7 M llz / Vとなる。なお、第3基板SB
3は所定の位置に調節できたとき、接着剤で固定するこ
とが良い。第3図は第2図の上面図を示し、第4図は第
2図の動作等価回路図を示している。(5) Embodiment of the Invention FIG. 2 is a block diagram showing an embodiment of the invention corresponding to FIG. 1, and the same reference numerals as in FIG. 1 indicate the same parts. In FIG. 2, SB3 indicates the third substrate, on which the microstrip type dipole MDP is placed, and the first substrate SBI
and the second substrate SB2. Therefore, it is located at a position where it is electromagnetically coupled to both the main resonator and the sub-resonator, and by changing the position of SB3 to the left and right in FIG. 2 along the second substrate SB2, the degree of coupling between the resonators can be adjusted. . Therefore, the variable HIM sensitivity expressed by the amount of frequency variation with respect to the voltage applied to the varactor diode VRD can be finely adjusted by varying the position of the third substrate SB3. For example, fo is 26 G Ilz, modulation sensitivity is 0.5
~7Mllz/V. Note that the third substrate SB
3, it is best to fix it with adhesive when it can be adjusted to the predetermined position. 3 shows a top view of FIG. 2, and FIG. 4 shows an operational equivalent circuit diagram of FIG. 2.
また第3基板SB3は裏面パターンのないものであるか
ら、変調感度によっては5I12の」−に乗置った形と
することもある。第5図にその場合の上面図、第6図に
第5図A−A線で切断した断面図を示す。Further, since the third substrate SB3 does not have a pattern on the back surface, it may be placed on the 5I12 "-" depending on the modulation sensitivity. FIG. 5 shows a top view in that case, and FIG. 6 shows a sectional view taken along line A--A in FIG.
(6)発明の効果
このようにして本発明によると、簡易な構成によっても
主発振器・副共振器間の位置を微細に調節ができるため
、FM変調することに特性の良い状態を、早急に且つ簡
便に得ている。(6) Effects of the Invention In this way, according to the present invention, the position between the main oscillator and the sub-resonator can be finely adjusted even with a simple configuration, so it is possible to quickly obtain a state with good characteristics for FM modulation. Moreover, it is easily obtained.
第1図(支)従来の電子同調型FM変調器の構成例を示
す図、
第2図1j本発明の一実施例の構成を示す図、第31シ
団1゛第2図の上面図、
第4図は第2図の動作等価回路図、
第512iI Let本発明の他の実施例の構成を示す
図、第6図は第5図についての断面図である。
MR3−一生共振器 S RS、−副共振器SBI〜S
B3一基板
MSL−マイクロストリップ線路
GUND−ガンダイオード
V RD−−バラクタダイオード
MDP −マイクロストリップ型ダイポール特許出願人
冨士通株式会社
代理人 弁理士 鈴木栄祐
第5図
A′
第6図Fig. 1 (support) A diagram showing an example of the configuration of a conventional electronically tuned FM modulator; Fig. 2 1j a diagram showing the configuration of an embodiment of the present invention; 4 is an operational equivalent circuit diagram of FIG. 2, a diagram showing the configuration of another embodiment of the present invention, and FIG. 6 is a sectional view of FIG. 5. MR3 - lifetime resonator S RS, - sub-resonator SBI~S
B3 - Substrate MSL - Microstrip line GUND - Gunn diode V RD - Varactor diode MDP - Microstrip type dipole Patent applicant Fujitsu Co., Ltd. Agent Patent attorney Eisuke Suzuki Figure 5 A' Figure 6
Claims (1)
線路により取出す途中に、副共振器を使用して周波数変
調を与える電子同調型FM変調器において、主共振器・
副共振器の両者に電磁的に結合する位置にマイクロスト
リップ形グイポールを含む基板を配設したことを特徴と
する電子同81M型F M変調器。In electronically tuned FM modulators, a sub-resonator is used to provide frequency modulation while the oscillation frequency output determined by the main resonator is extracted through a microstrip line.
An electronic 81M type FM modulator characterized in that a substrate including a microstrip type Goupole is disposed at a position electromagnetically coupled to both sub-resonators.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18763383A JPS6079806A (en) | 1983-10-06 | 1983-10-06 | Electronic tuning type fm modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18763383A JPS6079806A (en) | 1983-10-06 | 1983-10-06 | Electronic tuning type fm modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6079806A true JPS6079806A (en) | 1985-05-07 |
| JPH0441522B2 JPH0441522B2 (en) | 1992-07-08 |
Family
ID=16209521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18763383A Granted JPS6079806A (en) | 1983-10-06 | 1983-10-06 | Electronic tuning type fm modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079806A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262736A (en) * | 1991-03-23 | 1993-11-16 | Nec Corporation | Compact voltage controlled microwave oscillator with dielectric resonator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323409U (en) * | 1976-08-05 | 1978-02-27 | ||
| JPS5762416U (en) * | 1980-09-30 | 1982-04-13 | ||
| JPS57128220U (en) * | 1981-02-02 | 1982-08-10 |
-
1983
- 1983-10-06 JP JP18763383A patent/JPS6079806A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323409U (en) * | 1976-08-05 | 1978-02-27 | ||
| JPS5762416U (en) * | 1980-09-30 | 1982-04-13 | ||
| JPS57128220U (en) * | 1981-02-02 | 1982-08-10 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262736A (en) * | 1991-03-23 | 1993-11-16 | Nec Corporation | Compact voltage controlled microwave oscillator with dielectric resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0441522B2 (en) | 1992-07-08 |
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