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JPS6070807A - Low noise amplifier - Google Patents

Low noise amplifier

Info

Publication number
JPS6070807A
JPS6070807A JP18168083A JP18168083A JPS6070807A JP S6070807 A JPS6070807 A JP S6070807A JP 18168083 A JP18168083 A JP 18168083A JP 18168083 A JP18168083 A JP 18168083A JP S6070807 A JPS6070807 A JP S6070807A
Authority
JP
Japan
Prior art keywords
low noise
noise amplifier
low
transmission line
variable capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18168083A
Other languages
Japanese (ja)
Inventor
Takayuki Imamura
今村 孝行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18168083A priority Critical patent/JPS6070807A/en
Publication of JPS6070807A publication Critical patent/JPS6070807A/en
Pending legal-status Critical Current

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  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To suppress the level of a spurious wave inputted to a low noise amplifier by loading a series resonance circuit including a varactor diode via a narrow gap in parallel with a main transmission line of the low noise amplifier. CONSTITUTION:A series resonator 20 is loaded in parallel with the main transmission line 3 of the low noise circuit main body 30 via a gap 8. The series resonator 20 consists of transmission lines 9, 11 and the varactor diode 10. When a desired wave is inputted from an input terminal 2 at a low level and subjected to low noise amplification by an amplifier element 6, a spurious wave with a high level is inputted from the input terminal 2 at the same time. In this case, the spurious wave is eliminated by adjusting a voltage impressed to the varactor diode 10 so as to amplify only the desired wave with low noise.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は可変容量ダイオードを用いて低雑音増幅器に
入力される不要波を容易に除去することができるように
したストリップライン可変帯域阻止ろ波器付の低雑音増
幅器に関するものである。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention provides a stripline variable band-stop filter that uses variable capacitance diodes to easily remove unnecessary waves input to a low-noise amplifier. This relates to a low-noise amplifier.

〔従来技術〕[Prior art]

一般にマイクロ波多重送受信機では、受信部雑音指数を
下げる必要があり、そのためこの種の送受信機において
、低雑音増ll′1′ii器を絹み込んだものがある。
Generally, in a microwave multiplexing transceiver, it is necessary to lower the noise figure of the receiving section, and for this reason, some transceivers of this type incorporate a low-noise amplifier ll'1'ii.

しかるに上記送受信機においてυJ、一般に送信機と受
信機とを同一筐体内に挿入してぃン〕ため、送信機の出
力が受信部に高レベルで回り込むという問題があり、こ
の回り込みがあると」二記低雑音増幅機は動作しなくな
ってしまう。そこで従来は、この低雑音増幅器の前に導
波管型の帯域阻止ろ波器を設けていたが、この導波管型
のものではその阻止帯域、即ち阻止すべき周波敞範囲は
その導波管によって一義的に決まってしまい、該導波管
自体を取り替えなければその阻11−帯域をLiJ変す
ることはできないという問題があった。
However, in the above-mentioned transceiver, since the transmitter and receiver are generally inserted into the same housing, there is a problem in that the output of the transmitter loops around to the receiving section at a high level, and when this wrap-around occurs. The low-noise amplifier mentioned above will no longer work. Conventionally, a waveguide-type band-stop filter was installed in front of this low-noise amplifier, but in this waveguide-type filter, the stop band, that is, the frequency range to be blocked, is the waveguide-type band-stop filter. There is a problem in that the waveguide is uniquely determined by the waveguide, and the LiJ band cannot be changed unless the waveguide itself is replaced.

〔発明の概要〕[Summary of the invention]

この発明は上記のような従来のものの問題点を解消する
ためになされたもので、低雑音増幅器の主伝送線路に並
列に狭い間隙を介して[IJ変容h1ダイオードを含む
直列共振回路を装イ’6j シ、−に記1」変容量ダイ
オードの印加電圧を加減することにより、低雑音増幅器
に入力される不要波のレヘルを1111圧することがで
き、しかもその阻止帯域を任意に可変できるストリップ
ライン可変帯域阻止ろ波器付の低雑音増幅器を提供する
ことを目的としている。
This invention was made in order to solve the problems of the conventional ones as described above, and it is possible to install a series resonant circuit including an IJ transformation h1 diode in parallel with the main transmission line of a low-noise amplifier through a narrow gap. '6j B, - 1' A strip line that can reduce the level of unnecessary waves input to a low-noise amplifier by 1111 voltage by adjusting the voltage applied to the variable capacitance diode, and can also arbitrarily vary its stopband. The object of the present invention is to provide a low noise amplifier with a variable bandstop filter.

〔発明の実施例〕[Embodiments of the invention]

以下この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例による低雑音増幅器を示し、
図において、1はストリップライン用誘電体基板である
。また2は入力端1.3は特性インピーダンスZOの伝
送線路で、低雑音増幅器の主伝送線路、15は容量、4
はサーキュレータ、5は無反射終端、6は増幅素子、7
は出力端、13は増幅素子への電圧印加端子、14は直
接短絡点、16は容量であり、以上により低雑音増幅器
本体30を構成している。また9は特性インピーダンス
Znの伝送線路、10は可変容量ダイオード、11は特
性インピーダンスZcの伝送線路、12は可変容量ダイ
オード10への電圧印加端子、17は容量、14°は直
接短絡点であり、2oは上記9.10.11により構成
され、低雑音増幅器本体30の主伝送線路3に間隙8を
介して並列に装荷された直列共振器である。また本実施
例においては、図示していないが、上記電圧印加端子1
2に可変電圧を印加するための電圧印加手段が設けられ
ており、上記直列共振器20と該重圧印加手段とにより
ストリップライン可変帯域阻止る波器が構成されている
ということができる。
FIG. 1 shows a low noise amplifier according to an embodiment of the present invention,
In the figure, 1 is a dielectric substrate for strip lines. In addition, 2 is the input terminal 1.3 is the transmission line with characteristic impedance ZO, the main transmission line of the low noise amplifier, 15 is the capacitance, 4
is a circulator, 5 is a non-reflection termination, 6 is an amplification element, 7
13 is an output terminal, 13 is a voltage application terminal to the amplification element, 14 is a direct short-circuit point, and 16 is a capacitor, which constitutes a low-noise amplifier main body 30. Further, 9 is a transmission line with characteristic impedance Zn, 10 is a variable capacitance diode, 11 is a transmission line with characteristic impedance Zc, 12 is a voltage application terminal to the variable capacitance diode 10, 17 is a capacitor, 14° is a direct short circuit point, 2o is a series resonator configured as described in 9.10.11 above and loaded in parallel to the main transmission line 3 of the low noise amplifier main body 30 with a gap 8 interposed therebetween. Further, in this embodiment, although not shown, the voltage application terminal 1
A voltage applying means for applying a variable voltage to the strip line resonator 20 is provided, and it can be said that the series resonator 20 and the heavy voltage applying means constitute a wave device for blocking a strip line variable band.

次に動作について説明する。Next, the operation will be explained.

入力端2から希望波fRが低レベルで入力されると、こ
の希望波fRは増幅素子6にて低雑音増幅され、出力端
7に導かれる。伝送線路9.可変容量ダイオード10.
伝送線路11で構成される直列共振器20の利得特性は
、第2図に示される如く、可変容量ダイオード10への
印加電圧が■0−■2のとき図のaの特性、VO−Vl
のときは図のbの特性、■0のときは図のCの特性とな
るものである。
When the desired wave fR is input at a low level from the input end 2, the desired wave fR is amplified with low noise by the amplification element 6 and guided to the output end 7. Transmission line 9. Variable capacitance diode 10.
As shown in FIG. 2, the gain characteristic of the series resonator 20 composed of the transmission line 11 is the characteristic of a in the figure when the voltage applied to the variable capacitance diode 10 is 0-2, VO-Vl.
When , the characteristic is shown as b in the figure, and when it is 0, the characteristic is shown as C in the figure.

希望波fRが低レベル(−100〜−10dBm )で
入力端2から入力され、増幅素子6で低雑音増幅されて
いるとき、不要波fOが高し−\ル(−10dBm以上
)で入力端2から同時に入力された場合、上記希望波f
Rは不要波fOで抑圧され、使用に供しない。そこで可
変容量ダイオード10に■〇−■1なる電圧を印加する
ようにすれば、不要波fOは増幅素子6の前にて反射さ
れ、無反射終端5に吸収される。また不要波がf O+
f 2の場合は上記と同様に可変容量ダイオード10の
印加電圧をV(IVIとすればよく、不要波がfo+f
lときは可変容量ダイオード10の印加電圧を■0−V
2あるいはVOとすればよい。
When the desired wave fR is input at a low level (-100 to -10 dBm) from the input terminal 2 and is amplified with low noise by the amplification element 6, the unwanted wave fO is input at the input terminal at a high level (-10 dBm or more). If input from 2 simultaneously, the above desired wave f
R is suppressed by the unnecessary wave fO and is not used. Therefore, if a voltage of ■〇-■1 is applied to the variable capacitance diode 10, the unnecessary wave fO is reflected in front of the amplification element 6 and absorbed by the non-reflection termination 5. Also, unnecessary waves are f O+
In the case of f 2, the voltage applied to the variable capacitance diode 10 may be set to V(IVI) as described above, and the unnecessary wave is
When l, the voltage applied to the variable capacitance diode 10 is 0-V.
2 or VO.

このような本実施例の低雑音増幅器では、可変容量ダイ
オードへの印加電圧を加減することにより、不特定多数
の不要波を除去し、希望波のみ低雑音増幅することがで
き、かつその阻止帯域を任意に可変できる。しかもスト
リップラインで構成されているため、小形化が容易とな
る。
In the low-noise amplifier of this embodiment, by adjusting the voltage applied to the variable capacitance diode, an unspecified number of unnecessary waves can be removed and only the desired wave can be amplified with low noise. can be changed arbitrarily. Moreover, since it is composed of strip lines, it is easy to downsize it.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明によれば、低雑音増幅器の主伝送
線路に並列に狭い間隙を介して可変容量ダイオードを含
む直列共振回路を装荷し、上記可変容量ダイオードへの
印加電圧を加減することにより、低雑音増幅器に入力さ
れる不要波のレヘ1しを抑圧するようにしたので、不特
定多数の不要波を除去し、希望波のみ低雑音増幅するこ
と力(でき、かつその阻止帯域を任意に可変できる。し
かもストリップラインで構成されているため、)」\J
F、5 (ヒカ(容易となる等の効果が得られる。
As described above, according to the present invention, a series resonant circuit including a variable capacitance diode is loaded in parallel with the main transmission line of a low noise amplifier through a narrow gap, and the voltage applied to the variable capacitance diode is adjusted. By suppressing the unnecessary waves input to the low-noise amplifier, it is possible to remove an unspecified number of unnecessary waves and amplify only the desired signal with low noise. It can be changed arbitrarily.Moreover, it is composed of strip lines, so )”\J
F, 5 (Effects such as light (easiness) can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例の低雑音増幅器を示す構成
図、第2図は上記第1図の直列共振回路の特性を示す図
である。 図中、lはストリップライン用誘電体基板、2は入力端
、3ば特性インピーダンスZOの伝送線路、4はサーキ
ュレータ、5は無反射終端、6番ま増幅素子、7は出力
端、8は間隙、9は特性インピーダンスZnの伝送線路
、10は可変容量ダイオード、11は特性インピーダン
スZ c c7)伝送I泉路、12は可変容量ダイオー
ドへの電圧印加端子、13は増幅素子への電圧印加端子
、14.14’は直接短絡点、20は直列共振回路、3
0は低雑音増幅器本体である。 なお図中、同一符号は同−又は相当部分を示す。 代理人 大 岩 増 雄
FIG. 1 is a block diagram showing a low noise amplifier according to an embodiment of the present invention, and FIG. 2 is a diagram showing the characteristics of the series resonant circuit shown in FIG. 1. In the figure, l is a stripline dielectric substrate, 2 is an input end, 3 is a transmission line with characteristic impedance ZO, 4 is a circulator, 5 is a non-reflection termination, 6 is an amplification element, 7 is an output end, 8 is a gap , 9 is a transmission line with characteristic impedance Zn, 10 is a variable capacitance diode, 11 is a characteristic impedance Z c c7) transmission I spring path, 12 is a voltage application terminal to the variable capacitance diode, 13 is a voltage application terminal to the amplification element, 14.14' is a direct short circuit point, 20 is a series resonant circuit, 3
0 is the main body of the low noise amplifier. In the drawings, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa

Claims (1)

【特許請求の範囲】[Claims] (11マイクロ波帯の受信機に用いられる低雑音増幅器
であって、該低雑音増幅器の主伝送線路に並列に狭い間
隙を介して装荷された可変容量ダイオードと伝送線路と
からなり該可変容量ダイオードへの印加電圧に応して共
振周波数の変化する直列共振回路と、上記可変容量ダイ
オードに可変電圧を印加する電圧印加手段とを備えたこ
とを特徴とする低雑音増幅器。
(11) A low-noise amplifier used in a microwave band receiver, comprising a variable capacitance diode and a transmission line loaded in parallel with the main transmission line of the low-noise amplifier with a narrow gap between them. 1. A low-noise amplifier comprising: a series resonant circuit whose resonant frequency changes according to a voltage applied to the variable capacitance diode; and voltage application means for applying a variable voltage to the variable capacitance diode.
JP18168083A 1983-09-27 1983-09-27 Low noise amplifier Pending JPS6070807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18168083A JPS6070807A (en) 1983-09-27 1983-09-27 Low noise amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18168083A JPS6070807A (en) 1983-09-27 1983-09-27 Low noise amplifier

Publications (1)

Publication Number Publication Date
JPS6070807A true JPS6070807A (en) 1985-04-22

Family

ID=16104991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18168083A Pending JPS6070807A (en) 1983-09-27 1983-09-27 Low noise amplifier

Country Status (1)

Country Link
JP (1) JPS6070807A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7054605B1 (en) * 2001-01-16 2006-05-30 Sequoia Communications Corporation Variable-gain low noise amplifier to reduce linearity requirements on a radio receiver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7054605B1 (en) * 2001-01-16 2006-05-30 Sequoia Communications Corporation Variable-gain low noise amplifier to reduce linearity requirements on a radio receiver

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