JPS6060653A - Photoconductive member - Google Patents

Abstract

PURPOSE:To provide high sensitivity particularly with semiconductor laser light by incorporating N at a specific concentration distribution into a photoreceptive layer formed with the 1st amorphous layer region (G) consisting of Si and Ge and the 2nd amorphous layer region (S) contg. Si on a base. CONSTITUTION:An amorphous silicon layer region (G) 103 contg. Ge is formed on the conductive surface of a base 1 having the conductive surface in such a way that Ge is distributed at the high concentration in the base side surface and at the low density on the opposite surface and is distributed uniformly in the direction parallel with the base surface or said region is uniformly formed over the entire layer. A layer region 104 contg. no Ge is formed on the layer region 103, thereby manufacturing a photoconductive member having a photoreceptive layer 102. H or halogen is incorporated into at least one of the regions 103, 104 to improve photoconductivity and the elements such as B, etc. of the III group of periodic table or the elements such as P, etc. of the V group which govern conductivity are incorporated into the layer 102. N is incorporated into the layer 102 in such a way that the N is distributed at the highest concentration in the layer 102. The photoconductive member which has high photosensitivity and excellent durability, is suitable for use with semiconductor laser light and has fast responsiveness with light is thus obtd.

Description

Detailed Description of the Invention The present invention relates to light that is sensitive to electromagnetic waves such as light (here, light in a broad sense, including ultraviolet light, visible light, infrared light, X-rays, gamma rays, etc.). O Regarding Hidenden Transfer As a photoconductive material that forms a photoconductive layer in a solid-state imaging device, or an image forming member for electrophotography in the image forming field, or a scrap of a document reading device, it has a high sensitivity and a high signal-to-noise ratio [photocurrent (Ip)].
/ dark current (Id)), has absorption spectrum characteristics that match the spectrum characteristics of the irradiated electromagnetic waves, has fast photoresponsiveness, has the desired dark resistance value, and does not cause any pollution to the human body during use. In addition, solid-state imaging devices are required to have characteristics such as being able to easily process afterimages within a predetermined time. Particularly, in the case of an electrophotographic image forming member incorporated into an electrophotographic apparatus a used in an office as a business machine, the above-mentioned non-polluting property during use is an important point.

Based on this point, amorphous silicon (hereinafter referred to as a-8i) is a photoconductive material that has recently attracted attention, for example, German Publication No. 2746967 and German Publication No. 285.
No. 5718 describes its application as an image forming member for electrophotography, and German Published Publication No. 2933411 describes its application to a yC electroconversion reader.

A photoconductive member having a photoconductive layer coated with conventional A-8I has excellent electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, ) C response, and In terms of usage environment characteristics such as moisture resistance, and furthermore, in terms of stability over time, it is essential to improve the combined characteristics.
The reality is that there are drawbacks.

For example, when used in an electrophotographic imaging member,
When trying to achieve high light sensitivity and high dark resistance at the same time, in the past, it was often observed that a residual potential remained during use. Accumulation of fatigue due to use often results in inconveniences such as the H11 ghost phenomenon resulting in afterimages or a gradual decline in responsiveness when used repeatedly at high speeds.

Furthermore, a-8i has a relatively smaller absorption coefficient in the long wavelength region than in the short wavelength region of the visible light region, which makes it difficult to match with semiconductor lasers currently in practical use. However, when a commonly used halogen lamp or fluorescent lamp is used as a light source, there is still room for improvement in that the light on the long wavelength side cannot be used effectively.

In addition, if the irradiated light is not absorbed sufficiently in the photoconductive layer and the amount of light reaching the support increases, the support itself will absorb the light that passes through the photoconductive layer. If the reflectance is high, interference due to multiple reflections will occur in the photoconductor I-, resulting in one blur of the image.
It becomes l.

This shadow is so large that the irradiation spot is narrowed to /JS in order to increase the resolution, and it becomes a big problem especially when a semi-4' body laser is used as a light source.

Therefore, while improving the properties of the a-8i material itself, it is necessary to devise ways to solve all of the above-mentioned problems when installing a photoconductive member.

The present invention has been made in view of the above-mentioned points, and is characterized by its applicability to A-8I as a photoconductive member used in electrophotographic formation members, solid-state imaging devices, reading devices, etc. As a result of continuing integrated research from a viewpoint, a non -crystal material based on silicon atoms, especially silicon atoms, as the mother, hydrogen atoms (H) and (D, Rogen atom (X).
An amorphous material containing at least one of the following, so-called hydrogen amorphous silicon, halogenated amorphous silicon, or halogen-containing hydrogenated amorphous silicon [hereinafter referred to as "a" as a generic notation for Σ
-8i (H, The photoconductive member designed and produced not only shows extremely superior properties in practical use, but also surpasses conventional photoconductive members in every respect, especially in terms of 111. This is based on the discovery that it has excellent characteristics as a photoconductive member for photoconductive use and has excellent absorption vector characteristics at long wavelengths (11, 11K).

The present invention has stable electrical, optical, and photoconductive properties at all times, is an all-environment type with almost no restrictions on usage environments, and has excellent photosensitivity on the long wavelength side and is resistant to light fatigue. The main object of the present invention is to provide a photoconductive member that is extremely durable, does not exhibit any deterioration phenomenon even after repeated use, and has no or almost no residual potential observed.

Another object of the present invention is to provide a photoconductive member that has high photosensitivity in the entire visible light range, is particularly good in matching with a photoconductor laser, and has a fast photoresponse.

Another object of the present invention is to maintain charge retention during charging processing for electrostatic image formation to such an extent that ordinary electrophotography can be applied very effectively when applied as an image forming member for electrophotography. It is an object of the present invention to provide a photoconductive member with a wide range of functions.

Still another object of the present invention is to provide a Lig'tb member for electrophotography that can easily produce high-quality images with high density, clear halftones, and high resolution. It is.

The history of the present invention is to achieve high light sensitivity (knee 4').
1-bH; l+SN ratio! 1st grade grapes first °C7j?
1,1B1. You can also get it by providing complete information.

Origin of the present invention 2;! '+j Electrical parts are light'j"f?shi!:
An amorphous phase 1j phase 1 (hereinafter referred to as 4Ql
a-(Je (Si, H,
The layer region (0) of the layer 1-1 and the amorphous layer 41 consisting of silicon atoms form the second layer region (0) which exhibits optical isogravity. (S) 8 ÷ i ('(j + formed of the photoreceptive layer and the photoreceptor layer 0'': 8 ÷ i('(j + 111), the photoreceptor layer is 0''), It is characterized in that its magnetic distribution is clear and the maximum force and degree of weaving are located inside the photoreceptive layer.

The light 7-shaped member of the 0 to 5 (\rXI) unexploded ``J'' with the above-mentioned layer structure is the same as the above-mentioned path ``Q'', and the 4-layer structure. Excellent electrical, photographic,
Shows photoconductive properties, UV resistance, and usage environment properties.

In particular, when applied as an image forming member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, and it has high sensitivity and a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, has high density, and can stably and repeatedly produce high-quality images with clear tones and high resolution.

Furthermore, the photoconductive member of the present invention has high photosensitivity in the entire visible light range, is particularly excellent in matching with semiconductor lasers, and has fast photoresponse.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the guide transfer device of the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a schematic diagram illustrating the layer structure of a photoelectric member according to a first embodiment of the present invention.

The photoconductive member 100 shown in FIG. 1 has a photoreceptive layer 102 on a support 101 for a conductive member, and the photoreceptive layer 102 has a free surface 105 on one end surface. ing.

The light-receiving layer 102 is made of a-Ge (Si) from the support 101 side.
, Jl,
The layer region (S) 104 has a layer structure in which the layer regions (S) 104 are sequentially layered.

The germanium atoms contained in the first layer region (G) 103 may be uniformly distributed throughout the first layer region (G) 103, or may be distributed uniformly in the layer thickness direction. Although it is evenly contained, the distribution concentration may be non-uniform.

In both cases, the content is uniformly distributed and evenly distributed in the in-plane direction parallel to the surface of the support. It is also necessary from In particular, 1111 (light receiving/fJi 102 surface 105) is contained evenly in the layer thickness direction of the light receiving layer 102 and is opposite to the side where the support 101 is provided.
The first layer region (G) 103 contains the first layer region (G) so that it is more distributed toward the support 1011111O than the other side, or vice versa. .

In the photoconductive member of the present invention, as described above, the distribution state of the germanium atoms contained in the first layer region (G) is as follows in the layer thickness direction.
It is desirable to have a uniform distribution in the in-plane direction parallel to the surface of the support.

In the present invention, germanium atoms are not contained in the second layer region (S) provided in the first layer region (G)-H, and such a layer structure has a light receiving property. By forming a layer, it is possible to obtain a photoconductive member that has excellent photosensitivity to light in the entire range of wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region.

Further, in one of the preferred embodiments, the distribution state of germanium atoms in the first layer region (G) is such that germanium atoms are continuously and evenly distributed in the entire layer region, and germanium atoms are uniformly distributed throughout the entire layer region. Since the distribution concentration C in the layer thickness direction is given a change that decreases from the support side toward the second layer region (S), the first layer region (G) and the second layer region (S) ), and by extremely increasing the distribution of germanium atoms at the edge of the support (4 degrees C) as described later, when using a semi-dedicated laser, etc. The first layer region (G) can practically completely absorb light on the long wavelength side, which is almost completely absorbed in the second layer region (S), and the light from the support surface can be completely absorbed. Interference due to reflection can be prevented.

Further, in the photoconductive member of the present invention, the first layer region (G
el and the second layer region (S) (since each of the amorphous materials that make up the amorphous material has a common element called a cricon atom, a chemical reaction occurs at the lamination interface. Stability is sufficiently ensured.

2 to 10 show a typical example where the distribution state of germanium contained in the first layer region (G) of the photoconductive part in the present invention is non-uniform in the layer thickness direction. shown.

In FIGS. 2 to 10, the horizontal Il:III is the distribution concentration Cf: of germanium atoms, and the axis is the first layer region (
G), where ``n'' is the layer area of pnl on the support side (
s'T is the position of the end face of G) on the support side and the first side on the opposite side.
Figure 4 shows the end face of the layer region (G).

That is, the first layer region containing germanium atoms (G
) is layered toward the ptT side from tB(t4Q).

FIG. 2 shows a first typical example of the distribution state of germanium atoms contained in the first layer region (G) in the layer thickness direction.

In the example shown in FIG. 2, the interface position tB where the surface where the first layer region (G) containing germanium atoms is formed and the surface of the first layer region (G) contacts, Up to the position, the distribution concentration C of germanium atoms takes a constant value CI, and the first layer tjl region (G)r (m containing, position Mt, y) in which germanium atoms are formed is an isotope. Degree C
It is gradually and continuously reduced until the p-field rf+i level Vnot·r is reached. At the interface position tT, the distribution concentration C of germanium atoms is reduced to C.

In the example shown in FIG. 3, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from position tB to position tT, and reaches iX:% C1 at position E1. The distribution state is formed as follows.

In the case of Fig. 4, the distribution concentration C of Germani atoms is a constant value of 6 degrees C6 up to the position 1. The distribution is gradually and continuously decreased between the positions 1 and 1 itT, and the distribution 4 degrees C is substantially zero at the position tT4. (In the case of less than N).

The distribution of germanium atoms (concentration C
ViC is gradually decreased continuously from 4 degrees C5 from II'7tn to position tT, and becomes substantially zero at position tT.

In the example shown in FIG. 6, the distribution concentration C of germanium atoms is constant at the concentration Co between positions 1B and 11, and the concentration CI6 at position IT. Position 1. Q between and position tT, distribution t1! The degree C is linearly reduced up to the position t, up to the end position IT.

ff1. shown in FIG. At l, the distribution concentration C is a constant value of the concentration C□ +1z from position tB to position Iieta), and from position letL to position 1, the distribution state decreases in a linear function from concentration C1 to Fuji COX. It is said that

In the example shown in FIG. 8, the distribution of germanium atoms from position 1B to position 1? Strength C is concentration C14
It decreases linearly to N.

@ In figure 9, ゛: position i & t9 f) χ;・Tt,
What is the distribution of germanium atoms? Agricultural degree C (-↓,
Once CIl is reduced to the p concentration Cl11 by the first order ζ', the concentration divided between the position t and (iχI?YtT is taken as a constant value of C, 6. ing.

In the example shown in FIG. decreases slowly, and near the drinking stage of t,
Fishing, it is said that the VC is very small and the &lL power is eta at 1°16.

Between position [4t6 and position t, VC is decreased rapidly at first, and then gradually decreased to make the concentration cut between position t and position t1. Then, it will be gradually reduced (s'llIMr
, LmQ cool ℃, concentration C-toiC reaches 0 (5L setting t
- and position tT, the concentration is reduced from L20 to substantially zero according to a curve shaped as shown in the figure.

As described above, according to FIGS. 2 to 10-1, the first layer region (G
) layer of germanium atoms annotated in j! In the uninvention, in the support 11ili, there is a long part of the distribution strength C of germanium atoms in the length A, which explains the relationship between the axis type 51j in the Ib state, and j゛[ tT
(Ill eye 1 is the same distribution density C as j-
, 8 bodies t Kosomosometa If it is provided in the distribution state of germanium atoms that do not have a low -led part or the first layer (G), IL is one of the preferred examples. −
Ru.

In the present invention, the first layer region CG) constituting the light-receiving layer constituting the redundant quadruple member is ideally located on the support side as described above, or conversely, on the free back side. A localized region containing a relatively high concentration of germanium atoms in the force (
It is desirable to have A).

For example, if the localized region (A) is explained using the symbols shown in FIGS. The existing area (A) is the interface position 1
In some cases, it is the entire layer region (LT) up to 5μ thick from B, and in other cases, it is a part of the layer region (LT).

Whether the localized region (A) is a part or all of the layer region (LT) is appropriately determined according to the characteristics required of the photoreceptive layer to be formed.

The localized region (A) preferably has a distribution state of germanium atoms contained therein in the layer thickness direction such that the maximum value Cmax of the distribution concentration of germanium atoms is preferably 1000 atomic ppm or more with respect to the sum of the germanium atoms and the silicon atoms. 5000 atomic ppm or more, optimally IXIO
It is desirable that the layers be formed so as to achieve a distribution state of atomic ppm or more.

That is, in the present invention, the layer region (G) containing germanium atoms has a layer thickness of within 5 μm (t
It is preferable to form the layer so that the maximum value Cmax of the distribution concentration exists in a layer region with a thickness of 5 μm from n to 5 μm.

In the present invention, Z contained in the 10th Rη region (G)
The germanium atom-containing chain may be appropriately determined as desired so as to effectively achieve the purpose of the present invention.
Preferably 1 to 10XI for the sum of 7 lycon atoms
O'atomic ppm.

Preferably 100-9.5X10'atomicppm
% is preferably set to 500 to 8×10' atomic ppm.

In the present invention, the first layer region (G) and the second layer region (8
) is one of the important factors for effectively achieving the object of the present invention. Great care needs to be taken when Bt.

In the present invention, the layer thickness TB of the first layer region (G) is preferably 30A to 50μ, more preferably 30A to 50μ.

Further, the layer thickness T of the layer region <S> of f′R2 is preferably
0.5-90μ, preferably 1-80μ, optimally (
l″l: Desirably 2 to 50μ 0 As the sum (TB+T) of the layer thickness TB of the first layer region (G) and the layer thickness T of the second layer region (S), both layer regions Based on the mutual relationship between the characteristics required for the photoreceptor layer and the characteristics required for the entire photoreceptive layer, it is determined as desired when designing the layers of the photoconductive layer.

In the photoconductive part of the present invention, the above (lvB4-T
) is preferably 1 to 100μ, more preferably 1 to 80μ, and optimally 2 to 50μ.

In a highly preferred embodiment of the present invention, the above-mentioned layer thickness TB and layer thickness T preferably have appropriate values selected for each when satisfying the relationship TB/T≦1. It is desirable that

In selecting the numerical values of the layer thickness IllB and the layer thickness T in the above case, it is preferable that the 1p4 coefficient ``n/T≦0.9, optimally TB/T≦0.8, be satisfied. It is desirable that the values of the layer thickness TB and the layer thickness 1'' are determined so that

In the present invention, the content of germanium atoms contained in the first layer region (G) is lXl0'atomicpp
In the case of m or more, it is desirable that the layer thickness TB of the first layer region (G) be as thin as t or -iJ, preferably 30μ or less, more preferably 25μ or less, and optimally 20μ. The following is desirable.

In the present invention, the first l layer region (G) and the second layer region (S) constituting the photoreceptive layer 47 may contain . 、Ha、Specifically, fluorine, chlorine, bromine, and iodine are praised, especially 7-fluorine,
It is possible to praise chlorine as being suitable.

In the photoconductive member of the present invention (1': [, high photosensitivity and high dark resistance, tar L has the following properties: A layer region containing nitrogen atoms is provided in the photoreceptive layer. It may be contained completely, or it may be contained only in a part of the layer region of the photoreceptive layer so that it is distributed ubiquitously.

In the present invention, the distribution state of elementary atoms (3-) in the layer region (he) is such that the distribution concentration C (he) is uniform in the in-plane direction parallel to the surface of the support. However, the layer thickness is non-uniform.

In the example shown in FIG. 11, the position tof is lower than the position t11.
In the layer region from the position t9 to the position tlo, the concentration of nitrogen atoms is 1 C, ° (C(0) is the concentration C21, and in the layer region from the position t9 to the position tlo, there is a sudden change from sto to t. The distribution concentration of nitrogen atoms increases considerably, and the distribution concentration of nitrogen atoms reaches a peak value C22 at tlo.

In the layer region from position tIo to position tl+, the nitrogen atom distribution 073 degrees C (to) decreases and becomes & at position tT (
The temperature becomes C21.

'In the example shown in Fig. 12, in the layer 1・α region from i☆ii'i:tB to position 13tu, the distribution of □M atoms +
jgrr';-C(N)rl degreeC7, and position t
For layer 1/L1 pirates at position t and 31 from 12, 1. The angle increases sharply at '+' and '-9 at f\γ device 13.
The distribution of elementary atoms σ1°↓ degree C(N) has a peak value C24 (, layer 1 from l1 stone t7. to position if"?tT dimension
(The distribution concentration of atoms decreases in the range (1 nitrogen) where the small n becomes 100% pC.

In 11 shown in FIG. 13, from position -tB to 1)
7: Layer up to 1 pit-14/l: ``↓ In the castle t゛1 nitrogen 1 Rashiko cloth/(,! Common CO\n is from C25 to C2
11'1: L) - increases rapidly, position j1ゞJt1
4, the distribution of negative atoms (ζ' degree C (N is the beam value C
It becomes 7.1. From position t14 to 1)゛buy, 1゛IJ fee to 1 at tT groan (-j'ku゛my JH; 1j4-i
- Distribution of -) degree CfN is steep? ;:Decreased to ke
l'TtT becomes -1', ``Kell5lC?q.

I'L example shown in Figure Tn14! ':i, rtshi:IV
,'tnf! 1. :, J Tree Ji:, 4 children (7J) l'j
Cloth density C (Nl is (7,':% degree C,!7f, position je
st tear 1 distribution dj21q'C(to) is rlJc a little,
At t15, the concentration becomes c2s. fi7', l'1"t+5
In the layer region from I\Zii'+'', L, 4, >7
(Tar cloth of 9 prefectures, part of agricultural production C (N 1) degree C2S,) from position tII+ f) γii'ttIV'!
': In the layer region at t, 1 nitrogen atom distribution concentration C (
N) u increases, position 1 + 7 minutes i 1 “”! :+r=C(
吋 takes a peak value of C29. In the layer region from position 111 to position tT, the distribution concentration Cφ of H, 1 N atoms is
The force decreases to a concentration C2 in the fSγ device T.

In the present invention, J7. The main purpose of the layer region (2) containing luranium atoms is to improve photosensitivity and dark resistance. )1.11): In order to prevent people from being injured by charges from the free surface of the photoreceptive layer, it is necessary to In the case where the main purpose is to strengthen the support, it is provided so as to occupy the narrow end 7 of the support layer of the light-receiving layer; .

In the above first JQ combination, the layer area N is filled with knowledge;! The content of nitrogen atoms is significantly reduced in order to maintain high photosensitivity, and 7. In order to prevent the injection of electrons into the free surface of the receptive layer, the surface of the receptive layer is relatively large, and the surface of the receptive layer is relatively large, so that the free surface of the receptive layer is relatively dense with the support. It is desirable to be given a relatively large amount to ensure sexual enhancement,
stomach.

Also, the above soil A? For the purpose of forming one room at the same time, 11, on the side of the four main bodies, it is relatively i't% fine.
I elbow, relatively low concentration ((min I
1 in the surface layer/1JJl area on the free surface side of the photoreceptive layer
qLl”i
□Senior's minute
It forms inside L (1 good).

However, Hakusan Hyogu or I゛ko prevents the injection of <::i.
- In order to make 4j element 1 on the free surface side, the distribution concentration of A element 1 elephant C (19 is made higher and 2/this layer/, 'ri band (he) is formed, nitrogen 1i, '[(distribution self) When the high layer region of IJ↓-C (to) comes into contact with the atmosphere, it becomes a mountain.

l'" rj white, Ji ko, i) ri jmo lil the moisture in the air', i'i1., 'C picture I9°i・1;, Ren's) empire'/j7) " Since we have X and 'H', we are free to use only one loaf of 1-17 1' nitrogen atoms.

In the main part 1, the layer tjl provided in the photoreceptive layer
1) Yes:;) of the nitrogen atoms contained in the region (↑q):; l, -i'y, il:J-=
Relationship between the properties of the tactile surface and the 7L field provided in contact with the support (Nlli') and the properties at the tactile surface. j, I am reluctant to have a sexual relationship and can choose as appropriate.

1, touch the song 2゛6 directly on the 1 thirsty area CN)!・::, 'f' (:5
In this case, the characteristics of 1, 1 and other layers f1
Contact with the 1st area 1TijK) 1 with sex 11'4
The relationship 1, 1.7 is also considered, and the nitrogen atom content 1,1 is iI
：'jyi, "Kazawa is done."

1; - of the nitrogen atoms contained in the layer region ■, the light guide formed, R'
! Depending on the N cases, it may be il゛[as appropriate, but
'jf just d, 0, (1(]I=5(latomic
%, more preferably (1, (102=4ilato+n
ic'%, 'ltt suitable is 0.0 (13-30ato+
The nic% is 9.

In the present invention, even if the j1 hikifu of each layer occupies the entire area of the photoreceptor layer 1 and the photoreceptor layer 4, or the layer head 1 and the layer 1 of the photoreceptor layer [≠1゛.to SoC2 acceptance4
1・′;)“;j, +r has a sufficiently large proportion II
'J, 1, jij, 7l + TQil,
Containment of nitrogen atoms (11-1-1) O・, 1, +j'
It is desirable that the value be sufficiently smaller (af) than the value of J1'il+.

% ratio of the present invention ((C1 layer area Gyu layer JE!T,...)
When the ratio d) to the layer thickness F of the receptive layer is more than two-fifths (d), as the largest amount of oxygen atoms contained in the layer region N, , good luck 7 kuke, 30at
omic'A or less, from 1t-f-'iL, < is 20a
It is desirable that the number be less than 10 atomic, and optimally less than 10 atomic.

In the present invention, the layer region σ in which the ``nephron'' floor atoms constituting the photoreceptive layer are contained is 1! [: As shown, nitrogen 1 + ii: child has a ratio of 11' on the support 1'1 body side and near the free surface.
・Localized 'Hifi region (13
). In this case, support 1-Y body and game C1 baggage ha'
If the density between .eta. and Pl' is increased by .sigma., and the direction of the receptive layer f\'L is -l=, it is possible to plot the difference.

The above localized region (-r3) is from 111N to j?
Let me explain using the notation shown in r14NK, bending surface position t11.! / Is V within 5μ from free surface tT? C &
J et al. 1LZ-, is undesirable.

In the present invention, F, 4.
'ij concave 1 modification (het13° wobbling freedom - JigimentT
There is also a 1/9 case where 57 is the total high area (LT) in thick soil, and the father layer: il (, t) 4 (LT)
Sometimes it is considered a part of.

Whether the localized region is a part or all of the layer region (LT) is determined as appropriate depending on the desired characteristics of the photoreceptive layer to be formed.

Localized region (Bl is the distribution of oxygen atoms in the layer thickness direction 9'l, and distribution of oxygen atoms i7:4fBL
The maximum value CmnX of is preferably 500 atomiccp.
It is preferable that the layer be formed so that the distribution state is such that the pH is at least 800 atomic pHm, more preferably at least 800 atomic pHm, and most preferably at least 1000 atomic pHm.

That is, in the present invention, g:? , :4i, atom containing j
It seems that the maximum value Cma The one that is formed is 9 inches long.

In the present invention, a discharge phenomenon such as glow discharge method, sputtering method, or ion blating method is used to form the first layer region ((Shu) composed of a-Ge (Si, IL+X). For example, a-('
The first layer region ((
)) To form a dead tree, gel manila l, an atom (
A raw material gas for Ge supply, which supplies Ge), and a 10F gas for supplying Si, which supplies silicon atoms (sl) as needed, and hydrogen source r-θθ introduction gas. 1',
+, raw gas or/and halogen atoms (3), atoms for 8 people, 1 gas, internally a, high IF - (introduce the desired gas into the light storage chamber under pressure, 1 nucleus jj(,),l
A glow discharge is generated in the i room, and tsr constant i, 'J
', f? It is sufficient to form 1ζ·( consisting of a-Ge(Sj, l[, To cure (distribution of archipelago II condition δ
, "! It is sufficient to form a layer consisting of a-Ge (Si, H +
411, for example, a target composed of Si in an atmosphere of an inert gas of Ar+tlc","r, or a mixed gas containing these gases as a pace, or the target and Ge
(('q) Using two pieces of the target, or using a mixed target of Si and Gc, dilute with diluent gas such as J-1'e or Ar as necessary. The raw material gas for supplying Ge, hydrogen atoms (F
This is accomplished by introducing a gas for introducing il and/or halogen atoms (3) into a sputtering chamber to form a plasma atmosphere of the desired gas.

To make the distribution of germanium atoms non-uniform, for example, the target may be sputtered while controlling the gas flow rate of the IIWF+ gas for supplying Ge according to a desired rate of change curve.

St(t', 1 for Kis used in the present invention!
11 Substances that can become old gas include 5IIF14+5
ItHe+St, IL+5i4H,. 71. Silicon hydride (silanes), which is converted from a gaseous state into a phantom gas (1), is effectively used. In particular, layer creation work'
：Si
H4,5j211□ is listed as a favorable one.

t as the material gas for supplying Ge1) P1
'shi, e2Ha+Ge*HslGc4H+ to GeH4+
. +Ge5HI2. GeJIH+GeJI+s+Ge5
II + * + G collto etc. gaseous state and tJ dregs are effectively used as f) as)'f: Kicked, younger sister, layer creation work 3゛ 1 `` 5
11 (4 easy to handle - 3, G (, 1'L of supply Tano J rate)
GeH, +.

Ge=i-1eIC; CxL is given as Of'E.

Used in accordance with the present invention 6 times]・Rogen atomic pigeon・11 gas for one person A】Efficacy・:C 61, many no・1
Cogen compounds are) 11~ge C) j+, K'ile Q, L
No rogungas, no rogen compounds,...rogen discovery 1'
iIK"ri, no rogen de i;'j4f:tstty'
i-silane gasification f3[', or halogen compounds that are gasified and broken are good *L, <"NkeL twist.

Also 11. ! if this is l', silicon j1; j child)・
4Mj formation 9 element doz 1 gas f, ij
'K of H is gasified A: I Ru, halogen 11 Luko A: Contains water - (・, chemical compound 1, 1 is also I ■ effect) joy, book) ° 1) light 4 ...): (It is possible to use this invention in 161 ways)
11, j, 1. On the integrated surface, halogen gas of fluorine, chlorine, bromine, and iodine, 13rfi"
,C/ji',CtIi,,'.

BrF5lBrF4+IP*, IP"7, I(-4yI
]3r and other interhalogen compounds can be mentioned.

Silicon compounds containing halogen atoms, so-called...silane derivatives substituted with halogen atoms include, for example, 5IF4+812F6+5IC4H5IBr4, etc.
Silicon halides are preferred.

When forming the characteristic photoconductive member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, Ge(!=': Si
Even without using silicon hydride gas as a raw material gas for supplying a-
A wheel is formed forming a first layer region (G) of 8iGe.

According to the glow discharge method, a first layer region G) containing halogen J3+'% is created! Uai, 4 (for main fishing,
For example, silicon halide and G, which are the raw material gas for supplying Si,
The raw material for e supply is germanium hydride, which becomes δ, and "+H"
Gases such as 2+He are added to the composting chamber forming the first layer 111 region (G) at a constant mixing ratio and gas flow rate, and a glow discharge is generated to remove these gases. The first layer region (G) can be formed on a predetermined support by forming a plasma atmosphere of . Ifllll to -I; it becomes easier to add hydrogen gas or (-1
Hydrogen (gas of silicon compounds with three children is also
i may be mixed 7 and layered 11v.

Also, each gas has a predetermined 711. There is no problem in using a plurality of 1a in combination; 1 in mixture;

a-8iGe (L-L
icfat forming the first layer region (G) consisting of
, lg1, for example, polycrystalline silicon or l(1crystalline silicon, crystalline germanium or 'i', and crystalline gel-7nium, respectively, are housed in a boat as an evaporation source, and this i1+i< is used as a resistor υ11・Heat and evaporate by λ・J5 method or electron beam method (EB method) etc. 4]
1 evaporated material is stirred into the gas plasma in the chamber by stirring it into the surrounding atmosphere.

At this time, in order to introduce a halogen atom into the 114 formed by either the sputtering method or the ion blating method, it is necessary to use the above-mentioned halogen compound or a silicon compound containing one halogen or one group. It is preferable to introduce a gas into the deposition chamber to form a plasma atmosphere of a sacrificial gas.

In addition, in A1 for introducing hydro atoms, &, l, raw material gas for introducing hydrogen atoms, e.g. l, dj, I-]7. Alternatively, the above-mentioned silanka, hydrogenated gel manila, and gases are placed in a sputtering solution for sputtering.
! Someone should create a plasma atmosphere of the gases.
, i-j' good.

In the present invention, illusion 1, J+I of halogen atom
The above-mentioned b-logon compound as x stinging gas 'Pinoto itj
Icl: Silicon compound containing halogen! In which + is used as valid,! So, Ruga, and other VC1JI
F, ■4Ct-.

HBr, l and Sff halide; <:, 5jH71
“2+S!112■2.

5HE2C1,,5r11. Ct,,5il-1,1(
r2. Halff-gen-substituted silicon hydride such as Sit-extruded r5,
and Ge1−LFs+′−;cHzT,”=+GcH,
IIGeILCl,s+GcH::C4+GeJ■sC
t+GeHIh's+GeIJ21(rt1GcH3[
(r, Gefll, lHGeH2I2HGcH3I and other halides containing hydrogen atoms as one of their constituent elements, such as germanium hydride, G(!F4+GeC
64.

GeBr4, GcI4+GeF2, GeC4TGcBr
2+Germanium halide such as GeIt, etc., in a gaseous state or in a gasified state? B+ substances are also effective in the first layer region (which can be cited as starting materials for Q formation). Among these materials, halides containing hydrogen atoms are Hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties (!1'), are also introduced at the same time as halogen atoms are introduced into the layer. Ru.

hydrogen atoms in the first layer region (G) t'i'; simply 2
．． To enter, in addition to the above, you need a tow or 5iE (4+5
itHI, +5isI4+Si, a. Silicon hydride of the cap with germanium or germanium compound for supplying Ge, or 'GeHaIGe, HnrGe5l-1
s+GQd4+n+GeJ+2+GeeH+<r to e7
111. This can also be carried out by causing discharge by causing germanium hydride such as 1+Ge4H1,1,+GeJ (2°) and silicon or silicon compound for supplying Si to coexist in the deposition chamber.

In a preferred example of the present invention, hydrogen atoms (1
or )・1)1° of halogen atom (3) or i・l of hydrogen atom and halogen atom (T1.-1-
X) is suitable for 001-40 atomic, more suitable 11j is 0.05-30 atomjcL, optimal is 0.
1-25ato+nic% To control the amount of hydrogen atoms α■ and/or halogen atoms (3) contained in the layer region (G) in FIG. What is necessary is to control the amount of the starting material used to contain the halogen atoms introduced into the deposition system, the discharge force, etc.

In the present invention, in order to form the second layer region (S) composed of a-8j (1-1+X), the starting material (1) for forming the first layer region (G) described above is used. Starting materials excluding the starting material that becomes KC1:1 gas for Ge supply [
The starting material (1) for forming the second layer region (S) can be used to form the first layer region (G) using the same method and conditions.

That is, in the present invention, in order to form the second layer region (S) composed of a-Si (I-I, This is done by a vacuum deposition method that utilizes. For example, saSi(HyX) can be produced by glow discharge method.
In order to form the second layer region (S) composed of
Along with the raw material gas for supply, hydrogen atoms (8) are added as necessary.
A raw material gas for introduction and/or for introduction of halogen atoms (3) is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer consisting of a-8i(H,X) may be formed on the surface of the support. In addition, when forming by sputtering, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, hydrogen is used. A gas for introducing atoms (5) and/or halogen atoms (3) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (6) contained in the second layer region (S) forming the photoreceptive layer to be formed,
Or the amount of halogen atoms (3) or the sum of the amounts of hydrogen atoms and halogen atoms ()i+X) is preferably 1 to 40 at
omic%, more preferably 5 to 30 atomic%, most preferably 5 to 25 atomic%.

In the present invention, in order to provide a layer region containing nitrogen atoms in the photoreceptive layer, the starting material for introducing nitrogen atoms is added to the (-) layer region box for forming the photoreceptive layer. It may be used together with the starting material and contained in the formed layer while controlling its amount.

When the glow discharge method is used to form the layer region (group), a starting material for introducing nitrogen atoms is added, selected as desired from among the above-mentioned starting materials for forming the photoreceptive layer. As starting materials for introducing nitrogen atoms, most of the following can be used: gaseous substances having at least nitrogen atoms as constituent atoms or gasified substances that can be gasified.

For example, a raw material gas containing silicon atoms (Si), a raw material gas containing nitrogen atoms (H), and hydrogen atoms (F) or (F) or halogen atoms (
3) is mixed with a raw material gas having constituent atoms at a desired mixing ratio, or a raw material gas having silicon atoms (83) and nitrogen atoms (■) and hydrogen atoms (6) having constituent atoms is used. A raw material gas containing atoms is also mixed at a desired mixing ratio, or a raw material gas containing silicon atoms (Si) and nitrogen atoms N is mixed.
and a source gas having three hydrogen atom planes as constituent atoms can be used in combination.

Alternatively, a raw material gas containing nitrogen atoms (1) as constituent atoms may be mixed with a raw material gas containing silicon atoms (Si) and hydrogen atoms (6) as constituent atoms.

Nitrogen atoms (he) used in forming the layer region (he)
Constructed into raw material gas for introduction! Starting materials that can be effectively used to obtain 7 are, for example, nitrogen (N2), where N is f1'1'f, or where N and 11 are constituent atoms.
, ammonia (NHa), hydrazine (NtNNIIt)
)-hydrogen azide (HN, ), ammonium azide (NH
Mention may be made of gaseous or gasifiable nitrogen such as 4N3), nitrogen compounds such as nitrides and azides. In addition to the introduction of nitrogen atoms, halogen atoms (3)
Trifluoride ice (F3N),
Examples include halogenated nitrogen compounds such as nitrogen tetrafluoride (F4N2).

In the present invention, nitrogen atoms are present in the layer region (N>).
In order to further enhance the effect of Iζ1, an oxygen atom can be further contained in addition to nitrogen Iζ1. JQ for oxygen atom introduction to introduce oxygen atoms into layer region (g)
For example, oxygen (02), ozone (Os
), re, dinitrogen dioxide (No) - nitrogen dioxide (deceased), -
Nitrogen dioxide (NtO), nitrogen sulfide (N203)
-Trinitrogen tetraoxide (N204) -Nitrogen pentaoxide (N20i
)-nitrogen trioxide (NOs), 7 recon cool LF (Sl), t+≦)ζ atom (0) and hydrogen atom j circle as constituent atoms, for example, disiloxane (H3SiO8iHs), trisiloyasan (HsSiO81H20s1ILs) ) and other lower siloxanes.

In order to form a layer region containing nitrogen atoms by a sputtering method, a monocrystalline or polycrystalline Si wafer or a 51gN4 wafer, or Sj and Sis
This can be carried out by sputtering a wafer containing a mixture of N4 in various gas atmospheres using a wafer as a target.

For example, if Si wafer is used as a target, the source gas for introducing nitrogen atoms and optionally hydrogen atoms and/or halogen atoms is diluted with a diluent gas as necessary. It is introduced into the seedling chamber for ivy, and a gas plasma of this gas is formed to form the Si wafer/
・All you have to do is tsukuri the -.

Alternatively, by using Si and 5isN+ as separate targets, or by using a mixed target of St and 5isN+, in an atmosphere of dilution gas as a gas for snow removal, or at least hydrogen atoms. σ→
Or/and by scuttling a gas z' containing the nitrogen atom (3) as a constituent atom in an atmosphere. As a raw material gas for introducing nitrogen atoms,
The raw material gas for seven nitrogen atom chains in the raw material gas shown in the glow discharge example described above can also be used as an effective gas in the case of snow vine ringing.

In the present invention, 1. 4'c,=-s when forming the photoreceptive layer
When providing a layer region containing elementary atoms (%) distribution of nitrogen atoms contained in the layer region Φ[F]! 14% Ct
By changing Nl in the layer thickness direction, a 12-page area N having the desired distribution state (depthprofHe) of one side of the layer +js
In the case of a glow discharge, it takes 5 min.
Nitrogen atom introduction ilJ to change al1tC(N)
While changing the gas flow rate according to the desired change: I+111λ',
Inside the sedimentation chamber (by introducing C, it becomes 1 ψ) L.

For example, by hand or outside? '5: X drive (safe etc.)
lTl'/ffWhatever h method is used, the gas i67, I? Perform the operation to change the predetermined needle -1!110 provided in the middle of the 3rd system to ff+141r.
)stomach. At this time, if i = ll, using the microcomputer %,
Oh -/J>l; J6 design'i'i'i'i'i'i'i'i'i'i'i'i'i'ii'i'ii'ii'ii'ii'i yi-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i--i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-i-/J> ’ flow” according to the rate of change curve.

σ[It is also possible to obtain the desired content curve.

The layer region (N) is divided into two layers using the two-layered method, and one is applied to the Nohi IJ.
If , the layer of nitrogen atoms j! ? Direction distribution f? 7. ! 1
73:C1. By changing N) in the layer thickness direction, the desired distribution state (de
In order to form a pth profile, firstly, as in the case of the glow discharge method, the starting material for the introduction of nitrogen atoms is used in the gaseous state, and the gas is introduced into the deposition chamber by This can be achieved by changing the gas flow rate as desired.

m2 is a target for sputtering, for example, S.
If a mixed target of Si3N4 and %Si3N4 is used, it can be achieved by setting the ratio of Si and Si3N4 in advance in the thickness direction of the target. .

In the photoconductive member of the present invention, the first region (G) containing germanium atoms and/or the second region (S) K containing no germanium atoms are:
Den 4g"!
H-containing: f3 % of the layer area (G) father i-:
t/ and the conduction properties of the layer region (S) can be controlled freely as desired.

In the present invention &j:, legend / 1.3 characteristics jl;l bait)
The layer region (PN) containing the substance (C) may be distributed over a part or all of the photoreceptive layer. Alternatively, the single layer region (PN) may be provided in a part or all of the layer region (Q or layer region (S)).

As the substance (C) that controls conduction characteristics, Ml'! ,
Examples of impurities used in the semiconductor field include Si or Ge in the present invention.

Examples include an n-type impurity that provides p-type conduction characteristics, and an n-type impurity that provides n-type conduction characteristics.

Specifically, n-type impurities include atoms belonging to group 2 of the periodic table (group Ⅰ atoms), such as B (+JtlI element),
A4 (aluminum) rGa (gallium).

There are In (indium), T'L"l (thallium), etc.

Particularly preferably used are B and Ga.

Examples of n-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as P (phosphorus), As (arsenic), and sb (
antimony), Bi (bismuth), etc., and %'PIAs is particularly preferably used.

In the present invention, the conductive layer contained in the photoreceptive layer.

The content of the substance (C) that controls the properties depends on the conductivity properties required for the photoreceptive layer, the properties of other layers or supports provided in direct contact with the photoreceptor layer, and the characteristics of the other layers. It can be selected as appropriate based on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when the substance for controlling the conduction properties is contained in the photoreceptive layer locally in a desired layer region of the photoreceptor layer, particularly at the edge of the photoreceptor layer on the side of the support. When it is included in the layer region (in the case of containing it in the scent, the relationship with the characteristics of the layer region (other layer regions provided in direct contact with the scent and the properties at the contact interface with the other layer regions) is also included. Taking this into consideration, the content of the substance controlling the densities is selected accordingly.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01-5X10'atomic ppm, more preferably 0.5-IX10'atomic ppm. 'atomicppm, optimally 1
It is desirable to set it to 5X103 atomic ppm.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that governs the conduction characteristics is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more, and optimally 100100a
toppm or more, the substance (C) is preferably contained locally in a part of the layer region of the photoreceptive layer,
In particular, it is desirable to contain it unevenly in the support-side end layer region (g) of the light-receiving layer.

Among the above, the support side end layer region of the photoreceptive layer (for example, by containing the substance (C) that controls the conductivity in the odor so as to have a content higher than the above-mentioned value). When the substance (C) to be contained is the above-mentioned n-type impurity, the free surface of the photoreceptive layer is subjected to the 11-electrode treatment to polarity. In addition, when the substance to be contained is the n-type impurity, when the free surface of the photoreceptive layer is charged to O polarity, the photoreceptor layer is blocked from the support side. The movement fJi+ of holes injected into the inside can be effectively prevented.

In this way, if the end layer region (in case the end layer region contains a substance that controls conduction characteristics of one polarity).

The remaining layer region of the photoreceptive layer, i.e. the end layer region (6)
The layer region (Z) other than the above may contain a substance controlling conduction characteristics of other polarity.

Alternatively, the substance controlling the conduction properties of the same polarity may be contained in the end layer region (in an amount much smaller than the actual amount contained in the fragrance).

In such a case, the content of the substance (C) that controls the conduction characteristics contained in the layer region (in the layer region) is determined by the polarity and content of the substance contained in the end layer region (in the mouth). Although it can be appropriately determined according to needs, it is preferably 0.001 to 1000 atomic ppmm, more preferably 0.05 to 500 atomic ppm, and most preferably 0.1 to 200 atomic ppm.

In the present invention, the end layer region (E) and the layer region (2))
1 when containing a substance that controls the same type of conductivity.
The content in the layer region ((a) is preferably 3
It is desirable to set it to 0 atomicPPm or less. In addition to the above-mentioned cases, in the present invention, a layer region containing a substance controlling conductivity having one polarity in the photoreceptive layer and a layer region containing a substance controlling conductivity having one polarity, and a layer region containing a substance controlling conductivity having one polarity, qf71
It is also possible to provide a so-called depletion layer in direct contact with a negative layer region containing a material. For example, if the p-type impurity described in rIIJ is added to the photoreceptor layer,
A depletion layer can be provided by providing the layer region containing the n-type impurity and the layer region Z) in direct contact with each other to form a 7yrπI'ip-n junction.

Substance controlling conduction properties in photoreceptive layer iFj(C), 51
1) In order to introduce a group 1 atom or a group V atom structurally, a starting material for introducing a group 1 atom or a starting material for a group 1 atom is used during layer formation. It may be introduced in gaseous form into the deposition chamber together with other starting materials for forming the second layer region.

As a starting material for such introduction of Group 1 atoms, it is desirable to employ a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for introducing such Group 1 atoms include =BJ]'a, B+iL. ,
DIIH9, BII: o.

Boron hydride such as BeH+o, BaH+z, B6H14,
Examples include boron halides such as BFB and DC13-BBrl. In addition to this, A'C'! +GaC'svGa(C
I(s)s+In(-'3r'1."C'3, etc. can also be mentioned.

In the present invention, effective starting materials for introducing Group 1 atoms include PH3,
Hydrogenated phosphorus such as Pz)it, PI■4I.

PFstPFsrPC'3FPC'5, PBrslPB
Examples include non-rogenated phosphorus such as r=+PI3. In addition, A5I (3, A!; F3yAsCJ3, AsBr5r
AsFa, 5bI4sr5bFs, SbF5, 5bC1
3.

5bC7I, rBi, B3. B1C7Is, B1Br5
'J can also be used as an effective starting material for the introduction of the VM+ diatomic.

The support C used in the present invention may be either electrically conductive or electrically insulating. As a conductive support,
For example, NiCrt stainless steel.

A4. Cr, Mo, , Au, Nb, Ta, V, Ti, P
I; Metals such as Pd or alloys thereof may be mentioned.・1
As the electrically insulating support, polyr-S'A I is used.

Polyethylene, polycarbonate 1., cell t1-z.

Acetate, polypropylene, polyvinyl chloride.

Synthetic resin films or sheets such as polyvinylidene chloride, 9 polystyrene, 71 clearamide, and glass.

Senmiso 22 paper etc. are commonly used. This IL':j-71j, the unconscious H-sexual body is preferably subjected to L treatment on at least one of its surfaces, and is placed in the corresponding Junden treatment.
It is also desirable that other markings are not provided on the surface side.

For example, if the glass is lσ1:, its surface (Ni(-
r+Al, Cr, Mo, Au+Ir+Nb, Ta, V,
'l''i+Pt+Pd, In20x, 5n02.TTO
(!n203+5nO2), etc. (C gives it conductivity.) If it is a resin film of (r, 1, polyester del fluoro, etc.), NlCrrA'HAgrP+3+ZnrNir
Au, CrJ'io, Ir, Nb, 'I'a, V, Ti
, Pt or the like is applied to the surface by vacuum evaporation, ηL beam evaporation, sintering, etc., and the surface 11z1 is simulated with the metal,
Then, conductivity is added to the surface ir6 by -IJ. The shape of the support body may be cylindrical, bell-shaped, or plate-shaped, and the shape is determined according to one's wishes. For example, as shown in FIG. If the photoconductive member 100 is used as an electrophotographic image forming member, it is preferably in the form of an endless belt or a cylinder in the case of continuous high-speed copying. The thickness of the support is appropriately determined so as to form a photoconductive member as desired, but if flexibility is required as a photoconductive member (c. It is made as thin as possible as long as it is within the range where it can be fully utilized.Hyakunen et al. .

Figure 15 shows an example of the 1st part of the blue equipment.

The gas cylinders 1102 to 1106 in the figure are densely packed with the raw material gas for forming the present invention.
As an example, Toeke 1102 is
rare in llc;
9999r, FSitl, /1-1e and yen, i.

) cylinder, ll031.11 (diluted with c (Jcl)
14 gas (purity 99,999.9 (, below (Jew4/
llc and 1i2j. ) cylinder, 1104 is N1-1.
, gas (1iiiIJ79!J, 99°ba) cylinder, l
l05kj: He gas (7 groups 14j 99.999%) cylinder, 1106FJ""2 dregs (I+1!HF<499
．． 999%) cylinder.

In order to flow these gases into the reaction chamber 1]01 (f), the pulps 1122-112 of the gas cylinders 1102-1106
'6. Confirm that the leak pulp 1135 is closed, and check that the inflow pulp 1112~1116, the BL outlet valve 1117~1121% Urasuke pulp l]32°+]
:33 is opened, first, the main pulp 1134 is opened to exhaust the inside of the reaction chamber 1101 and each gas pipe. Next, the reading of vacuum gauge 1136 is about 5XIQ'
When it becomes torr, auxiliary pulp 1132, 1133
, outflow pulp 1117~] 12■ is closed.

Next, when forming a light-receiving layer on the cylindrical substrate 1137, the gas cylinder 110
SiH4/He gas from 2, G from gas cylinder 1103
cH4/He gas, gas cylinder 1104, NH, gas to pulp 1122, 1123. Open J124 and check the pressure of outlet pressure gauges 1127, 1128, 1329 to 11<7/
Arrange ii”W to rnf, inflow pulp 1112, 1113
．． Gradually open 1114, mass flow controller +1
07.1108° and 1109 respectively. Pull 1
, ~. '1, outflow valve 1117.11.18,1
119, supplementary t! The h-valve 1132 is gradually turned ic1m to allow each gas to flow into the reaction chamber 1iot. Kono Tokino S
iH4/Ile gas flow h'i and (lel-1°/l(e
Adjust the outflow valves 111.7.1118.1119 so that the ratio between the gas flow rate and N[(, gas flow M, The main valve 1134 is opened by ii'i"l% while checking the reading of the V-column gauge 1136.Then, the humidity of the main valve 1137 is raised to 50~50 by heating the heater 1138.
Make sure it is set to 4 degrees in the 400'C range.
;? After itlC, change 'H,i,' to clear 1140 to the desired "
At the same time, a glow is emitted in the anti-Lr-1 chamber 1101 by setting the force to 2, and at the same time, the pre-installed change in the inter-vehicle distance 1? Ji! ' Therefore, 21 items of GetI4/He gas and N, H, gases are changed to I Vj by hand or by a method such as an external drive jU) 1ii10 of pulp 111.8 and pulp 1320. The 11°.) germanium atoms and nitrogen atoms contained in the layer formed by the IV operation were removed by 11i1
1ii; Do 11.

1. Set 6 to (1;) and emit glow for a desired time; 11. Maintain tM-7) to a layer thickness of 1137-1; (0) is formed. At the stage where the first layer +i (j, lj, etc.
, ), and discharge according to the inevitable discharge: ii. By maintaining the glow discharge for the desired time under the same conditions and procedures except for changing the conditions, z+', 10 sardine area (G) A second layer region (8) containing no germanium atoms can be formed thereon.

In order to create the substance (C) that controls the legendary properties in the first layer region (G) and the second layer region (S), the first layer region (()) and the second layer region ( For example, 1321-1. , PIL, etc. into the Mf' dipping chamber 11.
It would be better if the gas VCjJl introduced into 01 was changed.

During layer formation, it is desirable to rotate the base body 1137fd at a constant speed using motor J39 in order to ensure uniform formation.

Example υ Kotsui-C will be explained below.

Example 1 Figure 15 (Ic7): A cylindrical AC substrate was prepared using a cylindrical AC substrate using a bead manufacturing apparatus IJt as an image forming member for electrophotography (Samples 11-1 to 17-4) under the conditions shown in Figure 1.
) respectively and create 7'j (2nd 'r'G).

The concentration of germanium atoms in each sample is shown in Figure 16, and the concentration of nitrogen atoms is shown in Figure 17.
As shown in the figure.

(Put each sample directly under the belt)
``!Please install it in the alliance if +) 5. Q with OKV, 3sec
Corona charging was performed for a while, and a light image was immediately irradiated. The light image was created by using a tungsten lung light whale and projecting 21uX light h1 through a transparent test chart.

Then, by cascading the image wound (containing toner and carrier) over the surface of the image forming member, the surface of the forming member is exposed. The 1st page I9 was transferred to the transfer paper using the 5.01 (v Corona Tei fig:), and both samples were It was possible to obtain a clear image of Takano J() with good gradation and good gradation.

- Note (・b) For the formation of l'l'l''IIξIe, the light γjH',j is replaced by a ('C)ilQnIn GaAs semiconductor laser (10 m~■) instead of a tungsten lamp. Except for Q, 1, L', 1f:,' and times 4
; Under the toner image forming conditions, each trial 1't (C and the image quality of the toner transfer image...1'l1llll) was carried out. tone(
1] Present 1', (Good lI!'*Clearly: A high-quality image was captured.

Example 2 1 was copied onto a cylindrical AC base with the stripes r1- shown in Table 3 using the 1 bond device 1-V shown in FIG. 15.
'j-Ill Sample as an imaging member (sample///;2
]1 to 27-4) were prepared respectively (Table 4).

The content of germanium atoms in each sample is shown in Figure 16. The molecular weight δ': 1 degree is shown in FIG.

For each of these samples, Yoshikoro conducted an image evaluation test using the same method as in Example 1.・(The material also gives a high quality toner transfer image ψ of 7゛ζ. Father, 71 samples were tested for 200,000 cycles of 11 turns in an environment of 38℃ and 80% 1L11 for 1 car. However, the conditions for creating one sound of common iin in the embodiment of the present invention on IBJ are shown below.

Substrate polarity: germanium atom (C)e) containing no return...approximately 200x: germanium atom ((Jc)
Kawane f layer...approx. 250χ] release': it: liquid number: l3
．． 56Ml1z reaction reaction chamber pressure: 0.31. 'orr

[Brief explanation of the drawings] 2γ1,1 Figure Q: The present invention is exclusive to the transfer layer. tll'. For clarification, Figures 2 to 10 show the germanium concentration in the photoreceptive layer and the part of the child, respectively.
i-like Q3. Figures 1, 411 to 1, 11, and 11 of 2'5, which explain j to i, are respectively 5-shaped j7. Nhime explanatory diagram explaining j4, 1st
Figure 5 is a schematic explanatory diagram of eye 1/eye i''i used in the present invention, ';j1.'1 (i figure, W. Figure 17 shows each atom in the embodiment of the present invention 'J□F
FIG. 14 is a distribution diagram showing j molecules li-like i, @. 100・)°CノJL 1115月101...Branch F,
Body II 102...Photoreceptor layer (Satoto Marushima Gi-( C C -111→-C □C -1□--□□-1-ζ-C(NnC(N)

Claims (1)

[Claims] (A support for a photoconductive member and a first layer region (G) made of an amorphous material containing germanium atoms on the support.
) and a second layer region (S) that is made of an amorphous material containing silicon atoms and exhibits photoconductivity; A photoconductive part characterized in that the receptor layer contains nitrogen atoms, the concentration distribution thereof is smooth, and the maximum distribution concentration is located inside the photoreceptor layer. (2) The photoconductive member according to claim 1, wherein at least one of the first layer region (G) and the second layer region (S) contains hydrogen atoms. (3) The photoconductive material according to Claims 1 and 2, wherein at least one of the first layer region (G) and the second layer region (S) contains a halogen atom. Element. +41 The photoconductive member according to claim 1, wherein the distribution state of germanium atoms in the first layer region (S) is non-uniform. (5) The photoconductive member according to claim 1, wherein the germanium atoms are uniformly distributed in the first layer region (S). (6) The photoconductive member according to claim 1, wherein the photoreceptive layer contains a substance that controls conductivity. (7) Substances that control conductivity are in group ■ of the periodic table! 7. The photoelectric member according to claim 6, which is an atom that oxidizes. (8) The photoconductive member according to claim 6, wherein the substance that controls conductivity is an atom belonging to Group V of the periodic table.