JPS6053479B2 - Multi-wave semiconductor laser - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser capable of emitting light of multiple wavelengths from the same chip.

Conventionally, a single-chip semiconductor laser oscillates light of a single wavelength, so a complex configuration is required to obtain light of multiple wavelengths.

That is, as shown in FIG. 1, the semiconductor laser SCL
I to SCL3 and reflecting mirrors M1 to M4 are provided. In each laser, if STP is a stripe and TP is a semiconductor chip, the oscillated lights of single wavelengths λ1, λ2, and λ3 are appropriately reflected by opposite mirrors M1 to M4, and are incident on, for example, an optical fiber OPF and transmitted. . Although the oscillation characteristics of each laser can be kept good, if more wavelengths are required, the overall structure must become extremely large. SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned drawbacks and to provide a semiconductor laser capable of emitting light of many wavelengths using a single semiconductor chip.

Embodiments of the present invention shown in the drawings will be described below.

FIG. 2 is a top view of the embodiment of the present invention, in which the role is one semiconductor chip, sπ to STPm are m stripes, each located on the upper surface of the semiconductor chip TP, and extended to one end M of the chip. They are arranged so that they intersect at points.

PRM indicates a prism, and the tip TP is centered at the M point.
It is attached with. Further, the opposite side of the chip TP to the side to which the stripes are bonded is made into a polyhedron so that the end face is perpendicular to the longitudinal direction of the stripes. Therefore, a resonator for wavelengths λ1 to λm determined by each stripe is formed between the polyhedral end face of the chip π and the light emitting surface RD of the prism PRM, and light of each wavelength can be oscillated. Note that the light of each wavelength is concentrated at point M, propagates in the form of a single beam through the prism PRM, and reaches the RD surface. The light is reflected by the RD surface of the prism PRM, then dispersed again at point M, and reflected by the end face of the polyhedron of the chip TP. These are used as repeating laser oscillators. Therefore, at point M, light is repeatedly dispersed in a direction determined by the material of the prism PRM and the angle of incidence of light and focused in the direction of the RD surface. Light of multiple wavelengths is emitted vertically and simultaneously from the PD of the prism, and can be transmitted through the optical fiber OPF. Note that multiplex communication can be achieved by modulating each wavelength of light with a different signal.

Although FIG. 2 shows an example of m23, it is also possible to have m=4 or more if the material of the prism is selected. FIG. 3 shows a perspective view for easier understanding of FIG. 2.

Note that PN indicates a PN junction surface of a semiconductor. In this way, according to the present invention, a stripe for each wavelength is provided on a single chip, and the light is condensed and dispersed by a prism to simultaneously oscillate light of many wavelengths, making it possible to obtain a compact and highly efficient semiconductor laser. I can do it.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an example of the configuration of a conventional multi-wave semiconductor laser.
FIG. 2 shows a top view of an embodiment of the present invention, and FIG. 3 shows a perspective view thereof. m...Semiconductor chip, STPl, STP2...
・・S'IPm・・・Stripe, PN・・・・・・
・PN junction surface, 0PF...optical fiber, M1...
...M4...Reflector.

Claims (1)

[Claims] 1. In a semiconductor laser having a stripe structure, a plurality of stripes are arranged so that their extension lines intersect at one end of the chip, and a prism is provided at the intersection of the extension lines,
A multi-wave semiconductor laser characterized in that the other end of the chip is a polyhedron corresponding to the number of stripes, and a resonator is formed between each face of the polyhedron and the light emitting surface of the prism.