JPS6040261A - Electrode structure of thermal head - Google Patents
Electrode structure of thermal headInfo
- Publication number
- JPS6040261A JPS6040261A JP58098727A JP9872783A JPS6040261A JP S6040261 A JPS6040261 A JP S6040261A JP 58098727 A JP58098727 A JP 58098727A JP 9872783 A JP9872783 A JP 9872783A JP S6040261 A JPS6040261 A JP S6040261A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistor
- thermal head
- gold
- palladium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 78
- 238000000034 method Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910001120 nichrome Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 150000002940 palladium Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（１支イホｉ分野）
本究明は、プリンタやファクシミリなとに用いられるＩ
ｐＭ熱記針メ月］のヤーマルヘッドに２ける抵４九体へ
の通電用′屯（舅の構造に関する。[Detailed Description of the Invention] (1st Field of Invention) This research focuses on
For energizing the 49 resistors in the thermal head of the pM thermal recording needle (relating to the structure of the former).
（ｆｒｃ来４★１１．７とその問題点）サーマルヘッド
ＶＣは、第１図Ｖこボされるように、表面にクレーズ層
１を有する士ラミック基板２などにてなる基板３上に、
抵抗Ｈ＜層４が形成され、抵抗体層４の発熱部分５に通
？αを行なうための電極層６がその抵抗体層４上に形成
され、かつ発熱部分５は酸化を防ぐ１１ｕ１酸化届７と
感熱記録紙との接触摩耗を防止する耐摩耗）￥１８で破
復された構造のものがある。(FRC 4★11.7 and its problems) The thermal head VC is mounted on a substrate 3 made of a lamic substrate 2 or the like having a craze layer 1 on the surface, as shown in FIG.
Is the resistance H<layer 4 formed and connected to the heat generating portion 5 of the resistor layer 4? An electrode layer 6 for performing α is formed on the resistor layer 4, and a heat-generating portion 5 is a wear-resistant material that prevents contact wear between the 11u1 oxidation layer 7 and the thermal recording paper to prevent oxidation. There are some structures that have a similar structure.
従来のこの棟のサーマルヘラ）” ＶＣｈ−いては、電
極層６としては、ニクロム（ＮｉＣ：ｒ ）層９と金（
Ａｕ）層１０との積層構造としたものが用いられている
。ニクロム層９ば、主として抵抗体）ダη４と金層１０
との踏’ ｊ＃ ｌ生を強めるために１１賭けられたも
のである。In the conventional thermal spatula (VCh) of this building, the electrode layer 6 consists of a nichrome (NiC:r) layer 9 and a gold (
A layered structure including an Au) layer 10 is used. Nichrome layer 9, mainly resistor) η4 and gold layer 10
11 bets were made to strengthen one's life.
ところで、このようなサーマルヘッド全製造するには、
裁板３上に抵抗体層４、ニクロムノ師９、金層１０を順
次積層形成した後、企）Ｉ’ｆＪ１０とニクロム層９を
フ、ｔ ｌ−エツチング液程によリハターン化して電極
６を形成し、次に抵抗体層４をフォトエツチング工程に
よりパターン化する。しかし、従来のこの電極構造では
、金層１０とニクロム層９は同じエツチング液ではエツ
チングを行なうことができないため、電極形成に２回の
エッチング工程を必要とする。そのため、製造上程数が
多くなるとともに、製造少留ジも低下する１ｉ４ノ題が
るる。By the way, in order to fully manufacture such a thermal head,
After sequentially laminating the resistor layer 4, nichrome layer 9, and gold layer 10 on the cutting board 3, the electrode 6 is formed by rehabilitating the I'fJ10 and the nichrome layer 9 using an etching process. Then, the resistor layer 4 is patterned by a photoetching process. However, in this conventional electrode structure, since the gold layer 10 and the nichrome layer 9 cannot be etched with the same etching solution, two etching steps are required to form the electrode. Therefore, the number of production steps increases and the number of production costs decreases, resulting in a 1i4 problem.
（目的）
本究明りよ、サーマルヘッドの′市（１′１＜を４ｔ４
成する層のうち、上層の金層と下層の抵わし体層との密
層性を同上させるために両層間に介在させる廟として、
金層と同じエツチング液でエツチング処理ヲ行なうこと
ができる層を用いることによシ、電極形成のためのフォ
トエッチング工程ｔＪ回で済むようにし、もって製造工
程の簡略化と製造歩留シを図ることのできる電極構造を
提供すること全目的とするものである。(Purpose) Main investigation, thermal head's city (1'1 < 4t4
Among the layers that form, the upper gold layer and the lower resistor layer are interposed between the two layers in order to maintain the same density.
By using a layer that can be etched with the same etching solution as the gold layer, only tJ photo-etching steps are required for electrode formation, thereby simplifying the manufacturing process and improving manufacturing yield. The overall objective is to provide an electrode structure that can be used.
（構成）
本究明では抵抗体層上に形成される市価として、パラジ
ウム（１）ｄ）層と金層の積層構造体を使用する。パラ
ジウムは、金層と抵抗体層との密着性を向上させるとと
もに、金層と同じエツチング液でエツチング処理するこ
とができる。(Structure) In this study, a laminated structure of a palladium (1) d) layer and a gold layer is used as a commercially available layer formed on a resistor layer. Palladium improves the adhesion between the gold layer and the resistor layer, and can be etched using the same etching solution as the gold layer.
本究明の一実施例のサーマルヘッドは、第３図に示され
るように、例えは表面りこグレーズ層重を有するセラミ
ック基板２からなる基板３上に抵抗体層パターン４が形
成され、その抵抗体層パターン４上にはパラジウム層１
１と金層１０にてなる電極パターン１２が形成されてい
る。そして、抵抗体パターン４０発熱部５を含む頭載の
上方には保護膜として耐酸化層７と耐摩耗層８とが形成
されている。As shown in FIG. 3, a thermal head according to an embodiment of the present invention has a resistor layer pattern 4 formed on a substrate 3 made of a ceramic substrate 2 having a surface glaze layer. Palladium layer 1 is placed on layer pattern 4.
1 and a gold layer 10 are formed. An oxidation-resistant layer 7 and a wear-resistant layer 8 are formed as protective films above the headrest including the resistor pattern 40 and the heat generating portion 5.
基板３のグレーズ層１の厚さは通常使用されている厚さ
でよく、例えば４０〜８０ ｌｔｍが適当である。抵抗
体層４の厚さは従来のサーマルヘッドと同様に例えば３
００〜３０００λが過当でめシ、その材質も従来と同じ
く窒化タンタル（Ｔａ−Ｎ）、１１：／ｐ）Ｖシリサイ
ド（−１−ａ−５ｉ）、（：：ｒ−５ｉ０゜１”ａ−Ａ
／−Ｎ などを用いることができる。パラジウム層１１
の厚さは３００〜３０００λが過当であシ、また金層１
０の厚さは１〜２μｍが過当である。耐酸化層７として
は通常、１〜３μｍの厚さの二酸化シリコン（５１０２
）層が使用され、耐摩耗層８としては通常３〜１０μＩ
ｌｌの厚さの五酸化タンタル（Ｔａ２０５）層が使用Ｊ
される。しかし、耐酸化層と耐摩耗層を単層の灰化り゛
イ索（Ｓｉ−Ｃ）層やｂ（化ケイ素（Ｓｉ−Ｎ）層など
で形成してもよい。The thickness of the glaze layer 1 of the substrate 3 may be a commonly used thickness, for example, 40 to 80 ltm. The thickness of the resistor layer 4 is, for example, 3 mm as in the conventional thermal head.
00 to 3000λ is excessive and the material is tantalum nitride (Ta-N), 11:/p)V silicide (-1-a-5i), (::r-5i0゜1"a- A
/-N etc. can be used. Palladium layer 11
The thickness of 300 to 3000λ is excessive, and the gold layer 1
It is appropriate for the thickness of 0 to be 1 to 2 μm. The oxidation-resistant layer 7 is usually made of silicon dioxide (5102
) layer is used, and the wear-resistant layer 8 is usually 3 to 10 μI.
A layer of tantalum pentoxide (Ta205) with a thickness of J
be done. However, the oxidation-resistant layer and the wear-resistant layer may be formed of a single-layer ashing carbon (Si--C) layer, silicon oxide (Si--N) layer, or the like.
以下に、−実施例のサーマルヘッドの製造方法を第２図
及び第３図を参照しで脱明する。Below, a method for manufacturing a thermal head according to an embodiment will be explained with reference to FIGS. 2 and 3.
表面にグレーズ層１を有する中ラミック基板２上に、抵
抗体層４として窒化タンタル、タンタルシリサイドなど
の通常の抵抗体伺料を真空蒸層法、スパッタリング法な
どの薄１模形成技術を用いて成膜する。次に、その抵抗
体層４上Ｑこパラジウムを真を蒸肩法、スパッタリンク
法などの薄膜形ｌ反技術を用いて成膜し、更にそのパラ
ジウム層１１上に金金具空蒸眉法、スパッタリンク法、
メッキ法などの方法で成膜する。この金ｋｌ Ｉ Ｏは
、上ｆ［ｊのいずれかの成膜方法で形成したｒｌｉ Ａ
ｌ・ｉ’ ４’ｔｔｔ造であっても、あるいは例えばメ
ッキ層と兵窄蒸ｊＷ層との二層構造のような多層構造で
めってもよい。On a medium lamic substrate 2 having a glaze layer 1 on its surface, a conventional resistor material such as tantalum nitride or tantalum silicide is deposited as a resistor layer 4 using a thin 1 pattern forming technique such as a vacuum evaporation method or a sputtering method. Form a film. Next, a film of palladium is formed on the resistor layer 4 using a thin film technique such as a straight shoulder evaporation method or a sputter link method, and further on the palladium layer 11, a metal evaporation method is applied. sputter link method,
The film is formed using a method such as plating. This gold kl I O is formed by the rli A
It may be of l·i'4'ttt structure, or it may be of a multi-layer structure, such as a two-layer structure of a plating layer and a vaporized jW layer.
久に電極パターン１２を形成するために、金層１０とパ
ラジウム層１１を同時にフォトエツチング処理する（第
３図）。この場合のエツチング液としでは、ＫＩ ：
Ｉ ：ｌ１２０＝３ ： ｌ ： ７のン昆合溶液が適
当である。In order to form the electrode pattern 12, the gold layer 10 and the palladium layer 11 are simultaneously photoetched (FIG. 3). In this case, the etching solution is KI:
A combined solution of I:l120=3:l:7 is suitable.
次に抵抗体層４をフォトエツチング処理して発熱抵抗体
パターンを形成する。Next, the resistor layer 4 is photoetched to form a heating resistor pattern.
その後、抵抗体層４０発熱部５ヶ少なくとも含ム領域に
、マスクスパッタリング法によシ１ｌＩｌｔ酸化ｗ７と
して二酸化シリコン層を形Ｊ戊し、更にその耐酸化層７
上に、マスクスパッタリング法により五酸化タンタル層
を耐摩耗層８として形成すれはサーマルヘッドが完成す
る。Thereafter, a silicon dioxide layer is formed as oxidation w7 by a mask sputtering method in the region containing at least the five heat generating parts of the resistor layer 40, and then the oxidation-resistant layer 7 is formed.
A tantalum pentoxide layer is formed thereon as a wear-resistant layer 8 by mask sputtering, and the thermal head is completed.
（効果）
本発明のサーマルヘッドでは、？ａ極層ヲハラジウム層
と金層の積層構造としたので、その製造工程において金
層とパラジウム層が同じエツチング液でエッチ７ダされ
、電極のパターン化のためのフォトエツチング工程が１
回ですむ利点を有する。(Effects) What about the thermal head of the present invention? Since the a-pole layer has a laminated structure of a haladium layer and a gold layer, the gold layer and palladium layer are etched with the same etching solution in the manufacturing process, and the photoetching process for patterning the electrode is performed in one step.
It has the advantage of requiring only a few times.
従来のサーマルヘッドでは’ｔ４ｉ、４’ｌＡ ｎニク
ロム層と金層の積層構造でめったので、′電極のパター
ン化に２種類のエツチング液を取シ替えてのエツチング
工程が必要でめったのに比べると、本発明そは製進上イ
う（がＩｉ旧１６化σれるとともＩＩＣ製危歩菌９を向
に智せる幼呆をイｊする。Compared to conventional thermal heads, which had a laminated structure of a nichrome layer and a gold layer, patterning of the electrodes required an etching process in which two types of etching solutions were exchanged. In addition, the present invention will advance in production (Ii former 16 σ), and I will introduce a child who knows the IIC-made dangerous bacteria 9 in the direction.
／１． １図ｕｉｊの１′ＩＩｊ単な１証明第１図Ｃよ
ｆ）［米の一す−マルヘッドを）Ｊりず１５ノ［開園（
たたしわかりやすくするため、ハツチングは雀略した。/1. 1 figure uij's 1'IIj simple 1 proof figure 1 C yo f) [Rice one - Maru head] J Rizu 15 [opening (
However, for the sake of clarity, the hatching has been omitted.
以下も同じ）第２図は本冗明の一実施例全岬進する過、
ｌ、；■ｉにおけるパターン化１ｊ１１の伏悪全示ず断
面図、第３図は一実力亀例を示ず断］Ｉ■図でめる。(The same applies hereafter) Figure 2 shows an embodiment of this redundancy, in which the entire cape advances,
Figure 3 is a cross-sectional view of the patterning 1j11 in Figure 1, Figure 3 is a cross-sectional view of the patterned pattern 1j11 in Figure 1;
３・・基板、４・・・ｊ代４ｊＬ俸層、 ５・・・光熱
部分、７− ｌ１１１Ｊ ｉ変化層、８−＋＋ｆｆｔ摩
耗１−１ １０ ＝−金層、１１・・・パラジウム層、
１２・・・電極層。3...Substrate, 4...j generation 4jL layer, 5...photothermal part, 7-l111Ji change layer, 8-++fft wear 1-1 10=-gold layer, 11...palladium layer,
12... Electrode layer.
特Ｗ１出願人 ザンテツク・インコーホレイテッド外１
名Special W1 Applicant Zantetsu Incorporated Other 1
given name
Claims (1)
上に電（ｊ層が形成され、かつ、抵わし体層の発熱部分
が＋ｒｕＪ ＭＫ層で被覆されているサーマルヘッドに
おける電極層であって、その構造が抵抗体層上に形成さ
れたパラジウム層と、そのパラジウム層上に形成された
金層とからなることを特徴とするサーマルヘッドの゛電
極構造。(1) A thermal head in which a resistor layer is formed on a substrate, an electric layer is formed on the resistor layer, and the heat generating part of the resistor layer is covered with a +RUMK layer. 1. An electrode structure for a thermal head, the electrode layer comprising a palladium layer formed on a resistor layer and a gold layer formed on the palladium layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58098727A JPS6040261A (en) | 1983-06-01 | 1983-06-01 | Electrode structure of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58098727A JPS6040261A (en) | 1983-06-01 | 1983-06-01 | Electrode structure of thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6040261A true JPS6040261A (en) | 1985-03-02 |
Family
ID=14227552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58098727A Pending JPS6040261A (en) | 1983-06-01 | 1983-06-01 | Electrode structure of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6040261A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5045961A (en) * | 1973-08-30 | 1975-04-24 | ||
| JPS54107349A (en) * | 1978-02-10 | 1979-08-23 | Canon Inc | Thermal head |
| JPS5522001A (en) * | 1978-07-05 | 1980-02-16 | Jiro Konishi | Production of loose fibrous material and manufacture thereof |
-
1983
- 1983-06-01 JP JP58098727A patent/JPS6040261A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5045961A (en) * | 1973-08-30 | 1975-04-24 | ||
| JPS54107349A (en) * | 1978-02-10 | 1979-08-23 | Canon Inc | Thermal head |
| JPS5522001A (en) * | 1978-07-05 | 1980-02-16 | Jiro Konishi | Production of loose fibrous material and manufacture thereof |
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