JPS6037870B2 - Vapor deposition method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition method used when forming electrodes and the like of semiconductor wafers by metal vapor deposition.

Generally, electrodes of semiconductor devices such as transistors and ICs are formed of a metal vapor deposited film such as aluminum.

For example, in the case of
It has a structure in which an insulating film 2, various electrode films 3, a second insulating film 4, and further various electrode films 5 are sequentially laminated, and each of the electrode films 3 and 5 is formed by metal vapor deposition. . Incidentally, each of the insulating films 2 and 4 is formed of an oxide film, a nitrided pus layer, a phosphorus glass layer, etc., and the necessary portions are closed by etching or the like, and a part of the electrode films 3 and 5 is deposited inside the openings. There is. A conventional example of such a device for performing metal vapor deposition on a wafer 1 is shown in FIGS. 2 and 3. Reference numeral 6 indicates a metal emitting section, and 7 indicates a wafer (object to be deposited) holding section.

The metal radiation section 6 has a structure in which an electron gun box 9 is fixed on a fixed base 8, and a hearth 11 containing a vapor deposition source 10 of aluminum or the like is fixed on the electron gun box 9.
An electron gun 12 is housed in the electron gun box 9, and an electron beam 13 emitted from the electron gun 12 passes through a predetermined electric field and is bent upward to spot-irradiate the vapor deposition source 10. Then, the electron beam 13 of the evaporation source 10
Desired metal particles 14 for deposition are scattered radially upward from the portion where they are received. Further, the wafer holding section 7 includes a dome 15 surrounding the sky above the metal radiation section 6, a rotary support 16 rotatably supported within the dome 15, and a rotary support 16 that is rotatably supported within the dome 15.
A bowl-shaped wafer support body 17 is rotatably supported by the wafer support body 17. The inner surface of the wafer support 17 is curved into a concave spherical shape, and a plurality of wafers are attached to the metal radiation portion 6 on the inner surface.
Support it toward the bottom. Also, the wafer support 17
For example, there are 3 pieces of the same size inside the rotating support 16.
They are arranged at the same height and evenly spaced apart, and each inner surface faces downwardly at the same angle. These three wafer supports 1
7, 17, 17 are rotated (rotated) about their respective center lines, and rotated at the same height by the rotation of the rotating support 16, and in a circular orbit centered on the center line of the metal radiation part 6. installed. Therefore, in the metal vapor deposition on the wafer 1 by the above-mentioned Aoi mounting, on the one hand, the wafer support 17 supporting the wafer is rotated and revolved, and on the other hand, the metal particles 14 are emitted from the vapor deposition source 10 in the localization path of the metal radiation section 6. This is done by ejecting the wafer toward the wafer. Incidentally, in order to evaporate metal onto a larger number of wafers 1 at one time, the evaporation source 10 of the metal radiation section 6 is set far away from the center of curvature of the inner surface of the wafer support 17.

However, in this case, the metal particles 1 entering the wafer
The incident angle of the electrode film 3 may become acute, and a breakage phenomenon may occur in the electrode film 3 as shown in FIGS. 4 and 5, for example. That is, FIG. 4 shows the incidence angle 8 of the metal particles 14 on the wafer 1.
, becomes smaller, the electrode film 3 becomes constricted at the open □ end of the insulating film 2 and becomes extremely thin, resulting in an almost disconnected state. Further, FIG. 5 shows an example in which when the incident angle 82 becomes smaller, the metal particles 14 are not deposited near the open square end face of the insulating film 2, and the electrode film 3 becomes completely disconnected at this part. Therefore, in order to prevent such vapor deposition defects, the curvature of the inner surface of the wafer support 17 is devised, and the wafer support 1
7 is rotating and revolving, but the current situation is still insufficient. The present invention has been made in view of the above problem, and is achieved by moving the material emitting section in the vertical direction while holding the evaporation source and the electron beam emission source of the material emitting section in the relative positions during a predetermined evaporation operation. The present invention provides a vapor deposition method that solves the above-mentioned conventional problems by significantly increasing the angle of incidence of metal particles for vapor deposition into an object to be vaporized.

For example, FIGS. 6 and 7 show an example in which the present invention is applied to the vapor deposition layer for electrode formation on the wafer.
Items with the same numbers as in the figure indicate the same content as in Figure 3.
A different feature of the present invention is that the metal radiation section 6 is fixed on a lifting platform 18 that moves up and down as appropriate. This elevating table 18 can be moved up and down as appropriate by a drive unit 19 such as a cylinder drive or a motor drive, so that the height can be freely adjusted.

The vapor deposition method according to the present invention is performed by adding vertical movement of the metal radiation section 6 to the above conventional operation. Then, as shown in FIG. 6, when the metal radiation section 6 is at the bottom dead center position, gold vapor deposition is performed on the wafer in the same manner as in FIG. 6 to the wafer support 17
, the average incident angle of the metal particles 14 entering the wafer 1 changes from 83 to a4 (>03
) changes significantly. The angle of incidence after this elevation is proportional to the elevation distance 1 of the lifting platform 18, and can be made close to a right angle. Therefore, even if some evaporation defects occur in the state shown in FIG. 6, these defects can be corrected by increasing the incident angle 84 due to the rise of the metal radiation section 6. Note that the principle of operation is the same even if the wafer holding section 7 is moved up and down instead of the vertical movement of the metal radiation section 6.

Furthermore, the present invention is not limited to an apparatus for forming a metal vapor deposited film on a semiconductor wafer, and the object to be vapor deposited may be other than a semiconductor wafer, such as a glass component. As explained above, according to the present invention, the range of incident angles of the metal particles for vapor deposition entering the object to be vaporized is greatly increased, which makes it possible to form a more uniform vapor deposited film. This eliminates the step breakage phenomenon and improves quality.

[Brief explanation of the drawing]

FIG. 1 is a partial cross-sectional view of a semiconductor wafer, which is an example of an object to be deposited, FIG. 2 is a partial cross-sectional side view of a subordinate deposition layer, and FIG.
The figure is a sectional view taken along the line A-A in FIG. 7 and 7 are partial cross-sectional side views showing embodiments of the vapor deposition system for carrying out the present invention during each operation, and FIG. 8 is a schematic diagram of the main parts explaining the operations shown in FIGS. 6 and 7. It is a diagram. 1... Object to be deposited (semiconductor wafer), 6...
...Metal radiation part, T...Deposited object holding part, 1
0... Vapor deposition source, 14... Metal particles for vapor deposition. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8

Claims (1)

[Claims] 1. A material emitting part having a deposition source and a beam emitting source, and an object holding part for holding an object to be vaporized above the material emitting part toward the material emitting part, and irradiating the vapor deposition source with an electron beam. In a vapor deposition method in which material particles for vapor deposition are scattered radially upward and deposited on an object to be vapor-deposited, the material emitting part is held in a predetermined relationship between the vapor deposition source and the electron beam emission source of the material emitting part. A vapor deposition method characterized by vertical movement during vapor deposition operation.