JPS6032195A - Magnetic bubble device - Google Patents

Abstract

PURPOSE:To obtain an ion implanting magnetic bubble transfer line having a wide bias magnetic field margin by increasing the curvature radius of a semicircular part of the transfer line and decreasing the curvature radius of the other semicircular part respectively. CONSTITUTION:The curvature radius is set at 25mum for a semicircular part of the right side toward direction [1'1'2]. While the curvature radius is set at 1.75mum for a semicircular part of the left side. Thus a non-ion implanting area 1 and an ion implanting area 2 are formed. As a result, an ion implanting magnetic bubble transfer line is obtained with a large bias magnetic field margin.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a magnetic bubble transfer path of a magnetic bubble device.9. In particular, it relates to an ion implantation type magnetic bubble transfer path with a wide operating margin.

[Background of the invention]

Recently, U.S. Patent No. 3.828 was published as a transfer path for magnetic bubble devices.
, 329, the development of gapless transfer paths is being carried out in various places. As shown in FIG.
The outer side thereof is formed as an ion implantation region 2. Since this transfer path has no gaps, it is easy to fabricate the transfer path and is suitable for high density. However, in a transfer path having this shape, with a cell size of 4 .mu.m.times.4 .mu.m or smaller, the bias magnetic field margin is narrow at 10% or less, making it difficult to guarantee stable operation.

[Purpose of the invention]

An object of the present invention is to provide an ion implantation magnetic bubble transfer path with a wide bias magnetic field margin. It was devised from the change in 1st
In the transfer path shown in the figure, in which the interval between the transfer path rows is 4 μm with a period of 4 μm, the larger the radius of curvature, the wider the margin width in the curve of a circular disk. Conversely, for transfer in the (:112) direction, the smaller the radius of curvature, the wider the margin width. The present invention increases the radius of curvature of the semicircular portion on one side of the transfer path, decreases the radius of curvature on the other side, and widens the common margin width in both directions.

[Embodiments of the invention]

An embodiment of the present invention is shown in FIG. This is [112]
A semicircular portion with a radius of curvature of 25 μm was used on the right side in the direction, and a portion with a radius of curvature of 1.75 μm was used on the left side, and these were combined to form a non-ion implantation region 1 and an ion implantation region 2. It is something.

Another embodiment is shown in FIG. This uses a rectangle on the right side and a triangle on the left side in the [112) direction, and combines them to form a 1% non-ion implantation region and an ion implantation region 2.

The bias magnetic field margins of the transfer paths in FIGS. 3 and 4 are shown in FIGS. 5 and 6, respectively. [112] direction and (11
The width of the common bias magnetic field margin for transfer in the 2) direction was 13% and 12%, respectively, and a wide bias magnetic field margin could be obtained.

In the embodiment shown above, the transfer path is such that the bubble transfer direction is either the (112) direction or the (112) direction, but the transfer direction is [121), , [121].

Exactly the same results were obtained for the transfer paths in the (211) and [211] directions.

In the above embodiment, region 1 is a non-ion implanted region, but it may be implanted with lighter ions than ion implanted region 2 for another purpose.

That is, in order to generate a charged wall that attracts magnetic bubbles, it is sufficient that the surface of region 1 has no in-plane magnetization layer formed by ion implantation, or that the in-plane magnetization layer is thinner than region 2. As is well known.

[Brief explanation of the drawing]

Fig. 1 is a plan view of a conventional bead-shaped transfer path, Fig. 2 is a characteristic diagram of the transfer path shown in Fig. 1, and Figs. 3 and 4 are plan views of the transfer path of the embodiment. FIG. 6 is a characteristic diagram of the transfer path of the embodiment.

Claims (1)

[Claims] 1. A magnetic bubble device having a bead-shaped ion implantation magnetic bubble transfer path for transferring magnetic bubbles in the [112), [121), [:211] directions or in the opposite direction of these directions, A magnetic bubble device having a magnetic bubble transfer path in which there is no inner magnetization layer or the radius of curvature of the semicircular disks on both sides of the disks sandwiching a portion where the inner magnetization layer is thinner than other portions are different from each other. 2, [:112), (1213, (21st block)] In a magnetic bubble device having an ion-implanted magnetic bubble transfer path for transferring magnetic bubbles in the direction or in the opposite direction to these directions, there is no in-plane magnetization layer, or A magnetic bubble device having a magnetic bubble transfer path in which the shapes of the convex poles when viewed from a part where the thickness is thinner than other parts are different from each other on both sides sandwiching this part.