JPS6028183A - connector - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a novel electrical connector and its parts, and particularly to a multi-bin electrical connector and its parts suitable for mounting semiconductor devices (LSI).

[Background of the invention]

Pin connectors consist of pins, sockets into which they are inserted, and parts that package them, and are widely used as electrical and electronic connection parts. Furthermore, as computers become more densely packed, the importance of these connectors as one of the mounting techniques is being re-recognized. An example of the shape of the pin and socket portions of a conventional bin connector is shown in FIG. The socket part 2 is mostly made of a spring material mainly made of a Cu-Be alloy, and has a structure in which the inserted pin 1 is connected by the spring force of the socket part 2.

The socket portions 2 are arranged parallel to the pin insertion direction, and the pin 1 is sandwiched between the spring members (or cylinders). In recent years, as electrical and electronic components have become more highly integrated and computers have become more dense, there has been a demand for these connectors to be more compact and micronized.

In order to meet these demands, conventional socket shapes require a certain level of height along the pin insertion direction, which increases the thickness of the socket package, which poses a major problem in making it more compact. In addition, since the shape of the socket is complex, it is difficult to process it when miniaturizing the connector, so it is necessary to simplify the shape.

On the other hand, as the density of computers increases, the number of connector bins increases. In other words, as the number of pins inserted at once increases, the force required to join the connectors increases rapidly, and as the number of pins increases, it becomes impossible to join the connectors using human force using conventional spring force connectors. It is expected that Therefore, efforts are being made to develop low-insertion-force or zero-insertion-force connectors that require less force when inserting or removing pins and can provide reliable connections when joining.

JP-A-57-185680 discloses a device in which a hole is provided in the center of a spring member on a flat plate, and a male contact is inserted into the hole. However, this one is very difficult to remove.

JP-A-58-71572 and JP-A-58-73973 disclose electrical connectors for Josephson element semiconductor devices that operate at extremely low temperatures due to deformation of bimetal due to temperature changes. However, these bimetallic electrical connectors cannot be made large in size unless they have a certain thickness, so they cannot be made smaller.

An electrical connector in which the socket shown in FIG. 1(a) is made of a shape memory alloy is shown in the Metal Handbook (revised 4th edition, published in December 1981), but this does not allow miniaturization.

[Purpose of the invention]

An object of the present invention is to provide a connector that can be inserted with low insertion force and can be made compact, and its parts.

[Summary of the invention]

(Summary of the Invention) The present invention provides a device in which a male contact and a female contact are connected to each other in contact with each other, wherein the female contact is made of a shape memory alloy having a hole into which the male contact is inserted; The connector is characterized in that a portion constituting the hole has shape memory so as to bend and deform in the vertical direction of insertion of the male contact.

As a shape memory alloy, A20-10%, Zn10-40
Cu alloy containing %, Cu alloy containing 5n23-26%,
Cu alloy containing 12-15% At and 3-5% Ni, Ti
An alloy consisting of 42 to 48% Ni and the balance Ni is generally known. Other Fe-M n-based, Fe-Cr-N
i series, U-Mo series, M n -C (1 series, A u -
Cd type etc. can be used.

The table shows - as an example CuAtN1 alloy and Ni-'l
'i Shows the composition (wt%) and properties of the alloy.

These alloys are characterized by their final shape and A at temperatures below the Mf point.
Since they can be shape memorized to their final shape at temperatures above point f, subjecting them to these temperature cycles results in cycling of their final shape. Therefore, it is sufficient that the male contact and the female contact are memorized in shape so that they contact each other at desired portions and conduct electricity at the operating temperature.

The connector of the present invention preferably has a female contact made of a flat thin film. The thickness is preferably 100 μm or less.

The female contact according to the present invention is produced by changing the temperature of the hole-forming part to a temperature lower than the mantenside transformation temperature of the shape memory alloy, or higher than the matrix transformation temperature, so that the male contact is inserted in the insertion direction and the circumferential direction. Alternatively, it is preferable that the shape is memorized so that it can be bent and deformed in the opposite direction. Further, in the connector of the present invention, a male contact is inserted into the hole at a low temperature below the mantenside transformation temperature of the shape memory alloy, and then raised to the matrix transformation temperature of the alloy to restore the original shape memorized. Something that allows you to return it to is ideal.

Since it is inserted in a soft martensite state, it can be inserted with low insertion force, and when used, it returns to its original state to provide a strong connection.

In addition, the female contact in the present invention has its hole memorized at a temperature lower than the martensitic transformation temperature of the shape memory alloy so that the contact area with the male contact becomes larger than the space occupied by the hole, and in that state, the male It is preferable that the contactor be inserted and then raised to a temperature higher than the matrix transformation temperature of the alloy to restore its original shape. Since the female contact is inserted with the hole widened, it can be inserted with zero insertion force, and as described above, a strong connection is achieved during use.

The present invention provides a female contact made of a flat shape memory alloy, wherein the female contact has a hole into which a male contact is inserted, and the female contact has a hole portion into which a male contact is inserted, and is below the martensitic transformation temperature or above the matrix transformation temperature of the alloy. The connector is characterized in that the female contact and the male contact are shaped so as to be electrically connected to each other at a temperature of .

The hole portion of the female contact in the present invention has an H-shaped slit formed in the center of the female contact, and at least two slits formed at equal intervals in the center of the female contact. It is preferable to have two or more slits centered around a circle, and it is further preferable that the space occupied by the male contact be smaller than the space occupied by the male contact at the contact area with the male contact. A strong connection can be obtained by inserting the male contacts into these female contacts at a temperature below the martensitic transformation temperature and then raising the temperature above the matrix transformation temperature in the operating temperature state, as described above.

It is preferable that the hole portion of the female contact in the present invention has a shape memorized so as to be larger than the space occupied by the male contact inserted during insertion. Insertion of the male contact with zero insertion force is thereby possible.

The present invention provides a female contact made of a flat shape memory alloy, the female contact having a hole into which a male contact is inserted, and the hole corresponding to a hole provided in an insulating substrate. Place the
A connector characterized in that it is fixed to an insulating substrate. Further, the female contact has insulating substrates disposed on its upper and lower parts, and these are fixed to each other. With this connector, it is possible to have a higher density and a larger number of bins, and it is also possible to make it more compact. In the current LSI implementation for computers, the number of bins is 100 to 200, but in the future the number of bins is 100 to 200.
It is expected that there will be 1000 to 2000 pieces for a 0Crn square board. The present invention can also deal with such a number of bins.

Furthermore, in the present invention, female contacts can be similarly provided on the upper and lower surfaces of the insulating substrate. When provided on one side of an insulating substrate, a male contact is provided on the opposite side. These female contacts are electrically connected to each other and the female contacts and the male contacts are electrically connected to each other.

A multilayer printed wiring board or a printed circuit board is used as the insulating substrate. Female contacts made of the shape memory alloy of the present invention can be electrically connected and provided in correspondence with these male contact insertion holes.

The present invention is a male contact made of a rod-shaped shape memory alloy, and the male contact is inserted into a female contact and has a bent shape so as to be electrically connected to the female contact at operating temperature. An electrical connector part characterized by having a shape memory. Furthermore, this male contact is fixed to the insulating substrate. This insulating substrate is preferably a multilayer wiring board capable of high-density wiring. The male contact has a shape memorized so that it bends when the operating temperature is above the parent phase transformation temperature or below the mantenside transformation temperature, and when inserted into the female contact, the shape is memorized to be straight at these temperatures. be. The male contact of the present invention is preferably one that is directly solidified into a thin wire from a molten metal.

The present invention consists of a shape memory alloy characterized by being made of a thin metal film or thin metal wire formed by rapid solidification. It is extremely difficult to plastically process bulk shape memory alloys into these thin films or thin wires.

However, by vapor deposition on a metal substrate or by pouring the metal onto the circumferential surface of a rapidly rotating roll and rapidly solidifying it, the thickness can be reduced to zero.
．． A thin film or thin wire with a diameter of 0.5 mm or less can be formed. 0,1a1t at room temperature as a roll
By pouring the metal into a material having a mirror-finished surface having a thermal conductivity of c or more, the cooling rate from molten metal to solidification can be made to be 103 C/sec or more. This produces fine crystal grains that can be plastically deformed, so they can be processed into complex shapes. In order to form a thin film by a vapor phase method such as sputtering or vapor deposition, it is necessary to form a shape memory alloy in a hole in an insulating substrate in a corresponding manner. In this case, a metal foil may be provided on the insulating substrate in advance, the shape memory alloy may be deposited thereon, and the metal foil may be formed into a predetermined planar shape, preferably by etching, in correspondence with the holes in the insulating substrate.

(Application to mounting structure of semiconductor device) The present invention comprises a semiconductor device, a multilayer printed wiring board on which the semiconductor device is mounted, the board connected to a connector, and mounted on a printed circuit board. In the connector, a female contact made of a shape memory alloy having a hole for inserting a male contact provided in the multilayer printed wiring board connects the hole of the female contact to a hole provided in an insulating board. and is fixed to the insulating substrate in a manner corresponding to the hole portion of the female contact, and has shape memory so that the portion constituting the hole of the female contact is bent and deformed in the vertical direction of insertion of the male contact. This is in the mounting structure of semiconductor devices. The connector can be formed on the multilayer board in the same manner as described above.

Furthermore, the present invention includes a semiconductor device, a multilayer printed wiring board on which the semiconductor device is mounted, and a printed circuit board on which the board is mounted, wherein the printed circuit board has the multilayer printed wiring board on which the semiconductor device is mounted. A female contact made of a shape memory alloy having a hole for inserting a male contact provided on the board is inserted into the hole for inserting the male contact provided on the printed circuit board. The semiconductor device mounting structure is characterized in that the female contact is fixed in a corresponding manner and has a structure in which a portion constituting the hole of the female contact is bent and deformed in the vertical direction of insertion of the male contact.

By providing the connector of the present invention on a printed circuit board, a multilayer board can be connected to the printed circuit board without direct soldering.

Further, the present invention includes a semiconductor device, a multilayer printed wiring board on which the semiconductor device is mounted, and a printed circuit board on which the board is mounted, wherein the multilayer printed wiring board is attached to the semiconductor device. A female contact made of a shape memory alloy having a hole into which a male contact is inserted is provided, and the hole of the female contact corresponds to the hole for inserting the male contact provided in the multilayer printed wiring board. A mounting structure for a semiconductor device, characterized in that the female contact is fixed in place, and the part forming the hole of the female contact is bent and deformed in the vertical direction of insertion of the male contact. .

By providing the connector of the present invention on a multilayer board, a semiconductor device can be connected to the multilayer board without soldering.

[Embodiments of the invention]

(Example 1) FIG. 2 is a cross-sectional view of the electrical connector of the present invention.

This electrical connector has pin 1 inserted in direction 4 as a male contact.
The structure (in the thickness direction of the female contactor 2) is simplified by making it into a flat plate shape, and it is also easy to process and mold when making it compact and micro-sized. It is characterized in that a female contact 2 in the form of a thin plate or film is disposed in the pin insertion hole 6 of the insulating substrate 3 at right angles to the pin insertion direction 4. This female contact 2
is made of shape memory alloy. The pin 1 is pushed into a slit-like gap formed in the female contact for pin joining formed on the bottle insertion hole 6. The pin is above the matrix transformation temperature or below the martensitic transformation temperature,
The shape is memorized so that the connecting force of the pin is exerted by the spring force. The female contact 2 is fixed to the bottle insertion hole 6 of the substrate 3 by adhesive or other method. This structure allows the thickness in the wall direction to be made thinner than the conventional one, and is effective in making the connector more compact.

Furthermore, since the female contact 2 with this structure is provided flatly on the substrate, PVD method (evaporation, sputtering method, etc.), CVD method, etc.
It can be manufactured and integrally molded onto a substrate by a method of directly molding from a gas or liquid phase, such as a molten metal quenching method or thermal spraying. It is possible to bond or form a thin plate or film to serve as a female contact and integrally mold this into a predetermined shape by photolithography, chemical etching, or the like. The above-mentioned advantages are very effective in micro-fabrication of connectors, since a multi-pin connector can be molded at one time in a multi-bin connector, and microfabrication is easy.

In the connector structure of the present invention, when a shape memory alloy with thermoelastic martensitic transformation is applied to the female contact, the following effects can be obtained. Cu-A is generally used as a shape memory alloy.
t-, ZnXCu-AA-Ni, and Ti-H5 alloys are known, but these are all grains that are difficult to process such as rolling and molding. FIGS. 3 and 4 are cross-sectional views showing the process of joining a connector in which a shape memory alloy is formed on an insulating substrate 3. FIG. It is known that there are several types of shape memory effects, and FIG. 3 uses a one-way shape memory effect, and FIG. 4 uses a two-way shape memory effect. In either case, a shape memory alloy whose martensitic transformation temperature is lower than the operating temperature of the connector (generally room temperature) is used. FIG. 3(a) shows the female contact 2 made of a shape memory alloy in which the operating temperature and flat state have been memorized, and FIG. 3(b) shows the state in which it has been lowered to below the martensitic transformation temperature. In this state, the alloy undergoes martensitic transformation, and although the shape does not change accordingly, it becomes very soft. (C) Insert pin 1 in this soft state, and (d
), martensite returns to its original parent phase, the alloy hardens accordingly, and a force is exerted that tries to return to the original shape (state (a)) due to the shape memory effect. Accordingly, a large bonding force is applied to the inserted pin 1. From these results, it is possible to realize a low insertion force pin connector by using the shape memory effect.

FIG. 4 shows the state in which reversible shape memory occurs due to transformation in states (a) and (b). At the operating temperature of the connector, the shape is memorized so as to be in the state (a), and then at below the martensitic transformation temperature, the shape is memorized so that it is in the state (b). When the material is cooled to the martensitic transformation temperature, the shape memory effect opens a gap particularly in the pin insertion hole 5' formed in a slid shape. there(
When the pin is inserted as shown in (C) and returned to the operating temperature state as shown in (d), the alloy returns to the matrix state due to the shape memory effect and becomes hard, returning to the state (a), so that the female contact and pin Bonding force is applied to /. When this is cooled again to a state below the martinsite transformation temperature as shown in (e), the pin insertion hole opens and the pin can be easily removed. By applying the two-way shape memory effect to the connector structure of the present invention in this way, an electrical connector with almost zero insertion/extraction force can be realized. As mentioned above, shape memory alloys are difficult to process, so even if an attempt is made to micronize a conventional socket shape, the shape is complicated and processing is difficult. In comparison, since the structure of the present invention is simple, shape memory alloys can be easily applied to such difficult-to-process materials, which is a great advantage of the present invention.

(Example 2) In this example, processing of the shape of the female contactor was studied.

As a female contact, a spring material CJI8C1700 made of a Cu-13e alloy with a plate thickness of 0.08 to
- A quenched molten ribbon material of an 'I'i alloy was used.

This quenching material was produced using a twin-roll type quenching device, and was a thin plate having a thickness of 0.06 to 0.09 mm and a width of 5 to 10 days. The manufacturing conditions are 0.8 to 1. Orran
Uses Q=2 quartz nozzle with φ round hole, circumferential speed approximately 10 m/5 (
DCu-Be roll (diameter 120 ttrm) High pressure Ar gas (pressure 1.o ~ 1.5 kg/Crn)
” ), the molten metal was spouted and rapidly solidified. The properties in the table were measured at room temperature.

FIG. 5 is a plan view showing four types of planar shapes in which the outer shape of the female contact 2 is machined into a circular shape using the thin alloy plate.

(a) and (b) when the male contact cross section is circular, (C)
, (d) is a rectangle. For these processes, we tried electrical discharge machining using a wire, chemical etching, and punching.

In electrical discharge machining using wires, the holes through which the wires will be passed are first drilled. It was possible to process the drill to a minimum diameter of 0.1 mm. The wires used were copper wire with a minimum diameter of 0.1 wm or tungsten wire with a diameter of 0.05 tran. As a result, the width of the slit 7 could be up to 0.1 mm. In chemical etching, a slit shape printed on a photographic film is layered on a ribbon coated with a photocurable resin and cured, and only the unexposed slit surface is cleaned with the resin. As a result, only the slit portion is not covered with the resin. As a result of etching this by immersing it in a ferric chloride solution, the slit 7
It was possible to process the width down to 0.1 mm.

The punching was performed using an 8KD11 die steel die with zero clearance. This method also made it possible to process the slit width to a minimum of 0.1 rtan.

A pin was inserted into the thus processed female contact to evaluate the bonding force. The female contact shape is as shown in Figs. 5(a) and (b), with the slit 7 having a length of 3 mm, a width of 0.2 mm, and a diameter of the central hole 5 of 0.5 g, and (C) and (d). ), one side of the rectangle is 3 cylinders, and the width of the slit 7 is 0.2 m (in the case of (d), the length of the central slit 7 is 1.5 w).
n). The shape of the bottle is a rod with a diameter of 0.8+++m for the female contacts (a) and (b) of the former, and a rod shape of the latter (
For C) and (d), a rectangular bar measuring 0.4 wm x 1 m was used. The female contact was shaped so that it would be flat in the operating state, and the pin was inserted into liquid nitrogen.

Note that the above-mentioned Cu-14%At-4%Ni alloy thin plate processed with slits was deformed in liquid nitrogen, and then shape recovery due to the shape memory effect accompanying temperature rise was continuously observed using an optical microscope. When it was deformed into the open state as shown in Figure 4(b) in liquid nitrogen using a pin with a diameter of 1.5B, and then returned to room temperature, the shape at room temperature was almost completely restored to its original shape. . When joined under the above conditions, the pulling forces are 2oog in (a) and (b), and (c
), (d) was 150g. There was no significant difference in this force depending on the material. Further, the contact resistance at the bottle contact portion was 10 mΩ or more.

FIG. 6 is a plan view showing the planar shape of a slit designed to facilitate removal of the pin connector after joining.

(a) has a fan-shaped slit 7 instead of the three slits 7 in Figure 5(b), and (b) has a shape with the lower half of the rectangle in Figure 5 (C> removed). be.

A biscuit is inserted into the shaded area 8 in the figure, and when removed, slide it in the direction of the arrow to release it from the bonded state and then pull it out. (
FIG. 7 shows the shape of b) in three dimensions. The sliding force is about 1/10 of the bonding force, and it can be easily pulled out. In addition, with shape memory alloys, when sliding under liquid nitrogen temperature, the material becomes soft, so approximately 11
An attempt was made to insert and remove a pin using the two-way shape memory effect when a shape memory alloy, which could be slid with a force of 50 or less, was applied to the female contact.

The slit shapes are shown in FIGS. 5(a) and 5(C). In order to memorize the shape in two directions, first 2xφ or 1.2X
A rectangular pin is inserted under liquid nitrogen temperature and subjected to strong machining. This was repeated 2 to 3 times to memorize the shape.

When the pin under the above conditions was inserted into this female contact, it was inserted.
At the time of removal, a gap was created between the pin and the joint, so the force required for this was zero. When joining, the pulling force is 150
It was confirmed that a low insertion force connector could be obtained.

(Example 3) In this example, a method of fixing the female contact fabricated in Example 2 to a substrate having a pin insertion hole was studied. The material of the female contact was the same as in Example 2, and the substrate material was glass epoxy resin, epoxy resin, and alumina plate. Holes and the like in these substrates were processed using a general drill for the former and a COx laser for the latter. First, we investigated a fixing method using adhesive. FIG. 8 is a sectional view of a female contact with a different adhesive method. (a) is a method of simply fixing onto the substrate with adhesive 9.

In general, any adhesive can be used as long as it has sufficient adhesive strength, but
When shape memory alloys are used, they must withstand thermal cycles from room temperature to liquid nitrogen.

Therefore, ordinary organic adhesives cannot withstand this cycle. Inorganic adhesives made of alumina or zirconia and water glass can withstand this.

Furthermore, by sufficiently drying the silver paste, the peel strength can be increased to 150. Sufficient adhesive strength of approximately 100 g was obtained. When the substrate is alumina, the adhesive strength is further improved by about 50% by firing at 500 to 600 tT for 1 hour. Figure 8(b)
In this method, when the substrate is made of ceramics, a metalized plating layer 10 is provided on the substrate as an adhesive that can withstand thermal cycles, and then a brazing material 11 is used for bonding. In this example, M
After metallizing with O-M n paste at 1100C for 1 hour and applying Ni plating, it was bonded using a pot solder. Good adhesion with peel strength of 300 g or more was obtained for all alloys.

Using such brazing adhesion and the chemical etching described in the above embodiment, an attempt was made to directly mold a female contact into a hole on a substrate having a hole for inserting a pin. Indium solder, silver solder, lead solder, etc. are used as the brazing material. A perspective view showing the process is shown in FIG. (a) shows an alumina substrate 3 with a hole 6, and on the alumina substrate 3 (7), Cu-14%A, 1! A thin plate 12 of -4% Ni alloy was bonded by the brazing described above, and this was etched by the chemical etching described above, leaving a portion that would become a female contact around the hole, as shown in (C). In this state, the masking was further changed, and the pin joint slit was etched and molded. It has been found that since this process is possible, it is possible to manufacture a large number of female contacts corresponding to a large number of bottles at once.

As another example of the fixing method, we considered a method in which the female contact is sandwiched between two substrates, as shown in FIG.

(a) The upper and lower boards have the same pin insertion hole diameter, (b)
) is the one in which the diameter of the upper and lower holes is slightly larger than the pin diameter and serves as a guide for the bottle, and (C) is the one in which a groove is made in the lower board to make the upper and lower boards come into contact with each other completely, and a female contact is inserted there. Each arrangement is shown. These methods have a slightly more complicated structure than the adhesive method described above, but the reliability of the fixing strength is high. Furthermore, as shown in FIG. 8(a), by simply adhering and then sandwiching it between substrates from above, a fixation that can withstand thermal cycles was realized. A perspective view of a bin connector to which this fixing method is applied is shown in FIGS. 11 and 12. 11th
The figure shows the orientation of FIG. 10(b), and FIG. 12 uses the same method of <(c), the number of pins is 30, and the pitch between the pins and the focusing bin is 2 inches.

The pin has a round shape with a diameter of 0.8 mm, and the slit shape of the female contact has a length of 3 mm, as shown in FIG. 5(b). The substrate is acrylic resin. Figure 11 shows the board fixed with screws 18, and Figure 12 shows the upper board 1 attached to both ends of the lower board 17.
A guide groove 16 is provided in which the upper board 5 is inserted and fixed, and the upper board is inserted from the side as shown by the arrow.

In the case of Fig. 11, in order to fix the position of the female contact, it is necessary to fix it on the lower board with simple adhesive.
In the case of Figure 2, the position is fixed simply by placing it in the groove on the lower board, and there is an advantage that even if there is a problem such as damage to the joint of only one pin, it can be replaced immediately.

(Example 4) Cu-Ni-ht type shape memory alloy was placed on an insulating substrate having various pin insertion holes by sputtering, and Cu and Kt foils were laminated thereon. The composition of the alloy is Cu-4%Nt-14%At (weight), oxygen-free copper (JIS type 1), electrolytic Ni (purity 99.5%) and At.
(purity 99.8%) in vacuum (10-1 to 10-1)
One charge of 2.5 kg was melted by high frequency at a pressure of 2.5 Torr and cast into a mold with a diameter of 95 mm. From the obtained ingot, a disk with a diameter of 90 m and a thickness of 5 mm was cut out by machining and used as a sputtering target. A two-pole DC-magnetron type sputtering device was used. After creating a vacuum of 3 x 10"I'orr in the chamber of the device, Ar was introduced to a pressure of 30 μm) (g) and the direct distance between the electrodes was 60".
5m'l'Q r r AreEE, Cu foil under sputtering conditions of power 200W.

It was deposited on one side of A4 foil (both 20 μm thick). The dependence of the sputtered film thickness on the sputtering time when deposited on these substrates increases almost linearly with time, and it can be deposited to a thickness of nearly 50 μm in 4.5 hours, and it can be easily converted into A4 foil in the laminated state. They were in close contact. A film with almost the same sputtered film thickness time dependence and high adhesion was also obtained on the Cu foil. The martensitic transformation initiation temperature (MS) of these sputtered films was -123 tl:: as a result of four-terminal electrical resistance measurement. Therefore, this shape memory alloy exhibits a significant shape memory effect between liquid nitrogen and room temperature, and can be used for members that operate between these temperatures.

When the rapidly cooled structure was observed with a scanning electron microscope, a fine crystal layer with a diameter of about 2 to 3 μm was formed on the surface, and the bending ductility was improved because stress concentration at the grain boundaries was alleviated against bending deformation.

A female contact f: was manufactured using the chemical etching process shown in FIG. 10 using a substrate in which the shape memory alloy was deposited on the KT and Cu foils in this manner. A good shape memory effect was observed by laminating shape memory alloys with a thickness of about 2 μm or more in a composite with a 50 μm thick A7 foil, and about 4 μm or more in a composite with a Cu foil, and they also adhered to each other. A complex was formed.

In this embodiment, the outer diameter is 1wn5, and the diameter of the central hole 5 is 0.5.
+o+, three lengths of slits 7, and a width of 0.28 were manufactured by chemical etching. A pin with a diameter of 0.8 mm was inserted into this product in liquid nitrogen, and the center hole 5 was bent to make it larger.Then, it was returned to room temperature, but the contact part of the female contact It was confirmed that it returned to its original flat state. Next, this product was placed in liquid nitrogen again, and a pin was inserted in the same way without any resistance. When it was returned to room temperature, the pulling force was about 100 g, and a zero insertion force connector was obtained.

(Example 5) This example shows an example in which a pin as a male contact was manufactured from a shape memory alloy. As a shape memory alloy, the cup-p, t-Nt gold alloy molten metal shown in the table above was used as a shape memory alloy with a diameter of 120 mm.
A fine wire with a diameter of about 0.5 cm was rapidly solidified by injecting high-pressure Ar gas from a quartz nozzle onto the surface of a roll made of e-containing Cu-based alloy.

The characteristics of this thin line are the same as those shown in the table above. Using this fine wire, a pin having the shape shown in FIG. 1(a) was plastically worked at a temperature higher than the matrix transformation temperature to bend the contact portion with the female contact into a dogleg shape. This material was then plastically worked in liquid nitrogen so that the contact area was straight. The pin thus obtained was inserted into the female contact shown in FIG. It was confirmed that the pin and the female contact were electrically connected to each other.The pulling force was smaller than that of a female contact made of a shape memory alloy.

In addition, when inserting in liquid nitrogen, even if it cannot be deformed straight in advance, it is in a soft martensitic state, so insertion can be performed with low insertion force.

(Embodiment 6) This embodiment shows an example applied to LSI implementation. Figure 13 shows LSI package 1 in which the electrical connector of the present invention is used.
9.19' is a perspective view of the printed circuit board 22 on which the circuit board 9.19' is mounted. LS119.19' is soldered to a ceramic multilayer printed wiring board 20 and further connected to a connector 21 of the present invention. The connector of the present invention is joined to a printed circuit board 22 by solder 25.

FIG. 14 is a cross-sectional configuration diagram in which a connector of the present invention is placed on a printed circuit board 4, and a multilayer printed wiring board 20 is placed on the connector. The connector of the present invention has a female contact 2 inserted into a hole 6 for inserting a pin 1' in a ceramic insulating substrate 15.
A conductive film 23 is provided to electrically connect the pin 1'' inserted into the printed circuit board 22, and a female contact 2 made of a shape memory alloy is fixed to the top of the conductive film 23 by an upper ceramic insulating board 14. The female contact 2 of the present invention is formed into a thin film by quenching molten metal, vapor deposition, sputtering, etc. as described above, and the thin film is attached to an insulating substrate and etched into a predetermined shape as described above. .

Fig. 15 shows wiring 22 of the present invention formed on a printed circuit board 2 by a conventional method, and a female contact 2 made of a shape memory alloy formed in the insertion hole of the bottle 1' in the same manner as described above. be done. The wiring film 24 and the female contact 2 are bonded together using a conductive paste or the like.

The female contact 2 is coated with resin as shown at 26. In both FIG. 14, inserting the bottle 1' in a soft martensite state allows insertion with low insertion force.

In FIGS. 14 and 15, in order to form the female contact 2 in a gas phase such as by sputtering or evaporation, it is necessary to close the hole for inserting the bottle, so a metal foil film is used on the insulating substrate 3 or printed circuit. It is fixed onto a substrate 22, a shape memory alloy is formed thereon, and etched into the desired shape.

FIG. 16 is a sectional view showing another example of the electrical connector of the present invention applied to LSI mounting.

Female contacts 2 made of shape memory alloy on both sides of the insulating substrate 30,
2'. The female contacts 2 and 2' are provided with a conductive film 23 so as to be electrically connected to each other. Bottle 1''' is inserted. The thin film forming the female contact can be manufactured by various methods similar to those described above, but forming the shape memory alloy in a gas phase such as sputtering or vapor deposition can be performed using the same method as described above. This can be done by covering the bottle insertion hole with metal foil.

According to this embodiment, the female contact can be inserted with low insertion force by forming a soft martensitic state or by forming a shape memory so that the space in the hole of the female contact expands greatly at low temperatures, and can be manufactured using etching technology. It is possible to obtain an electrical connector with high productivity through integral molding.

FIG. 17 is a sectional view showing an LSI mounting structure in which a multilayer printed wiring board 20 is provided with a connector 2 using the shape memory alloy of the present invention. The thin film connector 2 to the multilayer printed wiring board 20 can be manufactured by a conventional method such as using a thin strip made of a shape memory alloy by rapidly cooling a molten metal as described above, or by a vapor phase method such as vapor deposition or sputtering. A thin film is formed directly on the printed multilayer printed circuit board by making it conductive.
It can be formed into a desired shape by etching technology.

〔Effect of the invention〕

According to the present invention, it is possible to manufacture an electrical connector that can be inserted with low insertion force, can be made microscopic and compact, and can be integrally molded.

[Brief explanation of drawings]

Fig. 1 is a perspective view of a conventional pin connector (male contact) and female contact (socket), Fig. 2 is a sectional view showing the connection state of the connector of the present invention, and Fig. 3 is a unidirectional shape. FIG. 4 is a cross-sectional view showing the connection state of the carp/lid of the present invention using the memory effect. FIG. 4 is a cross-sectional view showing the connection state of the bin connector of the present invention using the two-way shape memory effect. FIG. FIG. 6 is a plan view of the female contact, not showing other examples of the present invention, and a plan view showing the state of insertion or removal of the male contact, and FIG. 7 is a plan view of the female contact shown in FIG. FIG. 8 is a perspective view showing the state of insertion and removal of the female contact and male contact in b), and FIG. 8 is a connector component showing another example of the present invention in which the female contact is formed on an insulating substrate; FIG. 9 is a perspective view showing the manufacturing process of integrally molding the female contact of the present invention by adhesion and chemical etching, and FIG. 10 is a sectional view of the connector component of the present invention in which the female contact is sandwiched between insulating substrates. 11 and 12 are perspective views showing the structure of a multi-pin connector having the cross-sectional metal shown in FIG. 10, and FIG. 13 is an LS connector using the connector of the present invention.
Perspective views showing I mounting, Figures 14 to 17 are the same <LS
It is a cross section of the electrical connector of the present invention applied to I-mounting. 1, t/, 1. ///, 1""...male contact (
bottle), 2゜2'...Female contact, 3.14...Insulating board, 5...Male contact (pin) insertion hole, 7...
slit, 9... adhesive, 10... metallized layer,
Plating layer, 11... Brazing, 12... Thin film of shape memory alloy, 19.19'... Semiconductor device (LSI), 20
...Multilayer printed wiring board, 21...Connector, 22.
...Printed circuit board, 23.24...Conductive film, 2
5...Solder, 26...Protective film. Agent Patent Attorney Akio Takahashi % 1 (cL) (b), (C) Den 2nd (αtsuro (shi)) Figure 3 Figure 40 5th (OL) (b) (C) (cL) 6th Illustration 9 Kuchi l' (6 Shin<b) Plan 9 Figure 10 Kuchi 11 Figure 12 Kuchi 131

Claims (1)

[Scope of Claims] 1. A device in which a male contact and a female contact are in contact with each other and connected, wherein the female contact is made of a shape memory alloy having a hole into which the male contact is inserted; A connector characterized in that a portion constituting the hole of the female contact has a structure that bends and deforms in the vertical direction of insertion of the male contact. 2. The connector according to claim 1, wherein the female contact comprises a flat thin film. 3. The male contact is inserted into the hole of the female contact at a temperature below the martensitic transformation temperature of the alloy, and is maintained above the matrix transformation temperature of the alloy.
The connector according to paragraph 2 or paragraph 2. 4. The portion constituting the hole of the female contact has shape memory so that the space is larger than the space occupied by the male contact at the contact portion at a temperature below the martensitic transformation temperature of the alloy; The connector according to any one of claims 1 to 3, wherein the connector is shaped so that the space occupied by the male contact is smaller than that occupied by the male contact in the contact state. 5. A female contact made of a shape memory alloy, the female contact having a hole into which a male contact is inserted, and the portion of the female contact forming the hole into which the male contact is inserted. A connector characterized by having a structure that bends and deforms in the vertical direction. 6. The connector according to any one of claims 1 to 5, wherein the hole portion is provided with a slit in the shape of a letter 8 at the center of the female contact. 7. The connector according to claim 5 or 6, wherein the female contact comprises a flat thin film. 8. A patent claim in which the part constituting the hole of the female contact has a shape memorized so that it has a smaller space than the space occupied by the male contact at the contact part with the male contact inserted into the hole. The connector according to any one of the ranges 5 to 7. 9. A female contact made of a shape memory alloy and having a hole into which a male contact is inserted; 1. A connector, which is fixed to a substrate and has a structure in which a portion forming a hole of the female contact is bent and deformed in a vertical direction when a male contact is inserted. 10. The connector according to claim 9, wherein the insulating substrate is fixed to the upper and lower surfaces of the female contact. 11. The insulating substrate is a multilayer printed wiring board, and the female contact is fixed to the wiring board by making the hole of the female contact correspond to the hole into which the male contact of the wiring board is inserted. A connector according to claim 9 or 10. 12. The insulating board is a printed circuit board, and the female contact is inserted into the circuit board so that the hole for inserting the male contact of the circuit board corresponds to the hole of the female contact. A connector according to claim 9 or claim 10, which is fixed. 13. A female contact made of a shape memory alloy having a hole into which a male contact is inserted; the part constituting the hole has shape memory so as to bend and deform in the vertical direction when the male contact is inserted, and the female contact is provided on the insulating substrate. A connector characterized in that a male contact is provided on the opposite side. 14. A male contact made of a rod-shaped shape memory alloy,
A connector component characterized in that the male contact has shape memory so as to assume a bent shape so as to be inserted into a female contact and connected to the female contact at operating temperature. 15. The connector component according to claim 14, wherein the male contact is provided on an insulating substrate. 16. A shape memory alloy comprising a thin metal film or thin metal wire formed by rapid solidification. 17. The metal thin film or metal wire has o, 1r11 at room temperature.
The shape memory alloy according to claim 16, which is formed by pouring and solidifying the metal onto the surface of a member having a thermal conductivity of t/α·sec·C or more. 18. The device is made of a shape memory alloy and has a hole into which a male contact is inserted, and the female contact is inserted into the insulating substrate by making the hole correspond to the hole provided on the insulating substrate. The connector is fixed to the upper and lower surfaces of the connector, and has a structure in which a portion constituting the hole of the female contact is bent and deformed in the vertical direction of insertion of the male contact. 19. The connector according to claim 18, wherein the female contacts on the upper and lower surfaces are electrically connected through holes provided in the insulating substrate. A semiconductor device, a multilayer printed wiring board on which the semiconductor device is mounted, and the board is connected to a connector and placed on a printed circuit board, the connector being connected to the multilayer printed wiring board. A female contact made of a shape memory alloy having a hole into which a male contact is inserted is fixed to the insulating substrate with the hole of the female contact corresponding to the hole provided in the insulating substrate. A mounting structure for a semiconductor device, characterized in that a portion of the female contact that constitutes the hole is bent and deformed in a vertical direction of insertion of the male contact. 21. Semiconductor device and 1. A device comprising a multilayer printed wiring board on which the semiconductor device is mounted and a printed circuit board on which the board is mounted, wherein the printed circuit board has a male contact provided on the multilayer printed wiring board inserted therein. A female contact made of a shape memory alloy and having a hole therein is fixed in such a manner that the hole of the female contact corresponds to the male contact insertion hole provided in the printed circuit board, and 1. A mounting structure for a semiconductor device, wherein a portion constituting a hole of a female contact has a structure that bends and deforms in the vertical direction of insertion of the male contact. 22. A device comprising a semiconductor device, a multilayer printed wiring board on which the semiconductor device is mounted, and a printed circuit board on which the board is mounted, wherein the multilayer printed wiring board is a male provided on the semiconductor device. A female contact made of a shape memory alloy having a hole into which the contact is inserted is fixed with the hole of the female contact corresponding to the hole for insertion of the male contact provided in the multilayer printed wiring board. A mounting structure for a semiconductor device, characterized in that a portion of the female contact that constitutes the hole is bent and deformed in a vertical direction of insertion of the male contact.