JPS6027151A - Composite metallic filament for mounting semiconductor element - Google Patents
Composite metallic filament for mounting semiconductor elementInfo
- Publication number
- JPS6027151A JPS6027151A JP13426683A JP13426683A JPS6027151A JP S6027151 A JPS6027151 A JP S6027151A JP 13426683 A JP13426683 A JP 13426683A JP 13426683 A JP13426683 A JP 13426683A JP S6027151 A JPS6027151 A JP S6027151A
- Authority
- JP
- Japan
- Prior art keywords
- strip
- present
- semiconductor element
- mounting semiconductor
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔本発明の技術分野〕
本発明は、半導体素子に発生する熱を有効に放熱しうる
銅−低熱膨張係数型Ｆｅ 系合金−銅の三層複合条から
なる半導体素子搭載用複合金属条に関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention provides a semiconductor device comprising a three-layer composite strip of copper-low thermal expansion coefficient type Fe-based alloy-copper that can effectively dissipate heat generated in the semiconductor device. Concerning composite metal strips for mounting.
一般に、半導体素子は、ろう接又は、接着用ペースト材
により、基板材料に接着される。この為、この基板材料
に要求される特性は、半導体素子である、Ｓｌ やＧａ
Ａθ と熱膨張が一致することが重要な因子であったが
、近年、素子の高密度化や高電力化が進む中で素子に発
生するジュール熱を有効に除去する為の放熱特性（熱伝
導特性）も又非常に重要な因子となっている０この為、
半導体素子が小型で、基板材料との熱膨張係数の差によ
り生じる応力が小さい場合には、基板材料とじで銅又は
銅合金が用いられることが多くなってきたが半導体素子
が大型化すると、基板材料との熱膨張係数の差により生
じる応力が大きくなり、素子の剥離や破壊が生じること
になる。そこで、熱膨張係数を半導体素子（Ｓｉ ：
４．’ＯＸ １０−６ｃｍ／ａｎ・℃、 ＧａＡｓ Ｘ
６．７Ｘ １０−６ｃｍ／ｃｍ・℃）に近似させ、な
おかつ熱伝導率を向上させる為に、コバール、４２７０
尾（４２％Ｎ１−Ｆｅ）などの低熱膨張合金を中心材料
としで、その両面に銅を被覆した三層被合金属条が提案
され一部で利用されている。しかしながらこの金属条で
は、東の平面方向の熱伝導率は、銅の被覆化率に応じて
著しく改善されるが、特に、熱放散性の点で′Ｍ要な条
の板厚方向の熱伝導率は、余り改善されず、その実用範
囲か限定されていた。Generally, semiconductor devices are bonded to substrate materials by soldering or adhesive paste materials. Therefore, the characteristics required for this substrate material are those of semiconductor devices such as Sl and Ga.
The matching of Aθ and thermal expansion was an important factor, but in recent years, as devices have become denser and have higher power, heat dissipation characteristics (thermal conduction) have become important in order to effectively remove the Joule heat generated in devices. Characteristics) are also very important factors.For this reason,
When the semiconductor element is small and the stress caused by the difference in thermal expansion coefficient with the substrate material is small, copper or copper alloy is often used to bind the substrate material. The stress generated due to the difference in thermal expansion coefficient between the material and the material increases, resulting in peeling or destruction of the element. Therefore, the thermal expansion coefficient of a semiconductor element (Si:
4. 'OX 10-6cm/an・℃, GaAs
Kovar, 4270 in order to approximate the
A three-layered metal strip made of a low thermal expansion alloy such as Ni (42% N1-Fe) and coated with copper on both sides has been proposed and used in some cases. However, with this metal strip, the thermal conductivity in the east plane direction is significantly improved depending on the copper coverage, but the thermal conductivity in the thickness direction of the strip is particularly important in terms of heat dissipation. The efficiency was not improved much, and its practical range was limited.
本発明は、かかる複合条の欠点を改善する為になされた
ものである０すなわち、本発明の目的は、半導体素子に
発生する熱をＭ効に放熱しうる銅−低熱膨張糸数型Ｐａ
系合金−鋼の三層複合系からなる半導体素子搭載用複
合金属系を提供するにある０
〔本発明の構成］
そして、本発明は上記目的を達成する手段として、三層
複合系の中心材料が複数の透孔をセする点にある０すな
わち、本発明は、熱膨張係数が、ａ、 ０〜１２． ａ
ｘ ｌｏ−６ｃｍ／ｃｍ ・℃ であるＦｅ系合金条
の両面に銅を被覆した三層複合条において、中心材料が
条表面積に対して１０〜５０係の複数の透孔を有するＦ
ｅ 系合金条であることを％徴とする、半導体素子搭載
用複合金属条である。The present invention has been made in order to improve the drawbacks of such a composite strip. That is, an object of the present invention is to provide a copper-low thermal expansion yarn type Pa
[Structure of the present invention] The present invention provides, as a means for achieving the above object, a core material of the three-layer composite system. In other words, in the present invention, the coefficient of thermal expansion is a, 0 to 12. a
In a three-layer composite strip in which both sides of an Fe-based alloy strip are coated with copper, the central material has multiple through holes of 10 to 50 times the strip surface area.
This is a composite metal strip for mounting semiconductor elements, which is characterized by being an e-based alloy strip.
本発明は、上記したよう姉、三層複合条の中心材料とし
て用いるＦｅ 系合金条として複数の透孔を有する条を
用いることにより、複合条の板厚方向の熱伝導特性を向
上さセ、半導体素子より生じるジュール熱の放散をスム
ースに行わせることができるものである。中心条に透孔
を設けると板厚方向の熱抵抗が軽減される結果、全体と
しての熱伝導度が向上する。As described above, the present invention improves the heat conduction properties in the thickness direction of the composite strip by using a strip having a plurality of through holes as the Fe-based alloy strip used as the core material of the three-layer composite strip. This allows smooth dissipation of Joule heat generated by the semiconductor element. Providing a through hole in the center strip reduces the thermal resistance in the plate thickness direction, improving the overall thermal conductivity.
本発明において、中心材料として用いるＦｅ系合金条（
中心条）に設けた複数の透孔を、条の表面積に対して、
１０〜５０％としたのは、１０％以下では、本発明の効
果（放熱効果）が十分期待できず、一方、５０％を越え
ると基板の機械的性質が著しく低下する為である０又、
該複合条の製法としては機械重圧接法浴融やつき法など
が適当である。In the present invention, Fe-based alloy strip (
The number of through holes provided in the center strip (center strip) is
The reason why the content is set at 10 to 50% is that if the content is less than 10%, the effect of the present invention (heat dissipation effect) cannot be fully expected, whereas if it exceeds 50%, the mechanical properties of the substrate will deteriorate significantly.
Appropriate methods for manufacturing the composite strip include mechanical heavy pressure welding, bath melting, and the like.
以下本発明を図面に基ついてより詳細に説明する。The present invention will be explained in more detail below with reference to the drawings.
第１図は、従来用いられてきた、Ｃｕ−４２アロイ−Ｃ
ｕ の三層複合条の断面を示したもので、その板厚方向
の熱伝導率は、第３図に示した通り、複合化の効果が十
分と言えない。これに対して、第２図は、本発明の実施
例である複合条の断面を示したもので、中心材である４
２７０イ６には、部分的に透孔部４があり、この部分で
は、両面に存在する、Ｃｕ 層が、直接、接触しており
、板厚方向の熱伝導率改善にを与している。第３図は熱
間圧接法により製造した本発明品の中心材である４２７
０イ３に占める透孔部４０面積が２０係の的の板厚方向
の熱伝導率を示しだもので、所期の効果が確認された。Figure 1 shows the conventionally used Cu-42 alloy-C.
This figure shows a cross section of a three-layer composite strip of U. As shown in FIG. 3, the thermal conductivity in the thickness direction cannot be said to be sufficient. On the other hand, FIG. 2 shows a cross section of a composite strip according to an embodiment of the present invention.
270I6 partially has a through hole 4, in which the Cu layers present on both sides are in direct contact, improving thermal conductivity in the thickness direction. . Figure 3 shows 427, which is the core material of the product of the present invention manufactured by hot welding.
The area of the through holes 40 occupying 0.3 indicates the thermal conductivity in the thickness direction of the target of 20, and the expected effect was confirmed.
本発明は、以上詳記したように、三層複合系の中心条に
複数の透孔を設けた構造からなるものであるから、この
三層条の板厚方向の熱伝導率が向上し、その結果、半導
体素子より生ずるジュール熱の放散がスムースに行わせ
ることができる顕著な効果を奏するものである。As detailed above, the present invention has a structure in which a plurality of through holes are provided in the center strip of a three-layer composite system, so that the thermal conductivity of the three-layer strip in the thickness direction is improved. As a result, the remarkable effect of smoothly dissipating the Joule heat generated by the semiconductor element is achieved.
第１図は従来の三層複合条の断面図であり、第２図は本
発明の実施例である三層複合条の断面図である。第３図
は従来の三層複合条の熱伝導率及び本発明の熱伝導率を
示しだ図である。
１・・・Ｃｕ層
２−−−Ａ’ｌアロイ（４２％Ｎｉ−Ｆｅ ）層３ ・
・・ 透孔を有する４２アロイ層４ ・・・ ４２アロ
イ層中の透孔部
代理人 内 １） 明
代理人 萩 原 亮 −
第１図
第３図
しＷクフットＪｊ（助−回枯比乃）FIG. 1 is a cross-sectional view of a conventional three-layer composite strip, and FIG. 2 is a cross-sectional view of a three-layer composite strip according to an embodiment of the present invention. FIG. 3 is a diagram showing the thermal conductivity of the conventional three-layer composite strip and the thermal conductivity of the present invention. 1...Cu layer 2---A'l alloy (42% Ni-Fe) layer 3 ・
... 42 alloy layer with through holes 4 ... Agents for the through holes in the 42 alloy layer 1) Akira agent Ryo Hagiwara - Figure 1 Figure 3 and W Kufut Jj )
Claims (1)
ｍ／ｃｍ ・℃であるＦｅ 系合金条の両面に銅を被覆
した三層複合条においで、中心材料が条表面積に対しで
１０〜５ｏチの複数の透孔を有するＦｅ 系合金条であ
ることを特徴とする、半導体素子搭載用複合金属条。The coefficient of thermal expansion is 4.0 to 1'2. OX 10-6c
In a three-layer composite strip in which copper is coated on both sides of an Fe-based alloy strip with a temperature of m/cm ・℃, the central material is an Fe-based alloy strip having a plurality of through holes of 10 to 5 degrees per surface area of the strip. A composite metal strip for mounting semiconductor elements, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13426683A JPS6027151A (en) | 1983-07-25 | 1983-07-25 | Composite metallic filament for mounting semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13426683A JPS6027151A (en) | 1983-07-25 | 1983-07-25 | Composite metallic filament for mounting semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6027151A true JPS6027151A (en) | 1985-02-12 |
| JPH0420269B2 JPH0420269B2 (en) | 1992-04-02 |
Family
ID=15124277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13426683A Granted JPS6027151A (en) | 1983-07-25 | 1983-07-25 | Composite metallic filament for mounting semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027151A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0332384A2 (en) * | 1988-03-10 | 1989-09-13 | Texas Instruments Incorporated | A circuit system, a composite metal material for use therein, and a method for making the material |
| JPH0247054U (en) * | 1988-09-26 | 1990-03-30 | ||
| JPH02283053A (en) * | 1989-03-03 | 1990-11-20 | Delco Electron Corp | Integrated circut/ heatsink intermediate products |
| JPH06188324A (en) * | 1992-12-16 | 1994-07-08 | Kyocera Corp | Semiconductor device |
| EP0634794A3 (en) * | 1989-12-12 | 1995-02-15 | Sumitomo Spec Metals |
-
1983
- 1983-07-25 JP JP13426683A patent/JPS6027151A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0332384A2 (en) * | 1988-03-10 | 1989-09-13 | Texas Instruments Incorporated | A circuit system, a composite metal material for use therein, and a method for making the material |
| JPH0247054U (en) * | 1988-09-26 | 1990-03-30 | ||
| JPH02283053A (en) * | 1989-03-03 | 1990-11-20 | Delco Electron Corp | Integrated circut/ heatsink intermediate products |
| EP0634794A3 (en) * | 1989-12-12 | 1995-02-15 | Sumitomo Spec Metals | |
| JPH06188324A (en) * | 1992-12-16 | 1994-07-08 | Kyocera Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0420269B2 (en) | 1992-04-02 |
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